Si4442DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) 0.0045 at VGS = 10 V 22 0.005 at VGS = 4.5 V 19 0.0075 at VGS = 2.5 V 17 30 * Halogen-free According to IEC 61249-2-21 Available * TrenchFET(R) Power MOSFETs: 2.5 V Rated * 100 % Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4442DY-T1-E3 (Lead (Pb)-free) Si4442DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 12 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C Continuous Source Current (Diode Conduction)a IS TA = 25 C TA = 70 C PD 15 17 11 60 2.9 1.3 3.5 1.6 2.2 1 TJ, Tstg Operating Junction and Storage Temperature Range V 22 IDM Pulsed Drain Current (10 s Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 s Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 16 Unit C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71358 S09-0228-Rev. E, 09-Feb-09 www.vishay.com 1 Si4442DY Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. 0.6 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = 250 A Gate-Body Leakage IGSS VDS = 0 V, VGS = 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V VGS = 10 V, ID = 22 A 0.0035 0.0045 RDS(on) VGS = 4.5 V, ID = 19 A 0.0041 0.005 VGS = 2.5 V, ID = 17 A 0.0062 0.0075 gfs VDS = 15 V, ID = 22 A 100 VSD IS = 2.9 A, VGS = 0 V 0.75 1.1 36 50 Gate Threshold Voltage Drain-Source On-State Resistance a Forward Transconductancea Diode Forward Voltage a 1.5 V 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 C 5 A 30 A S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15 V, VGS = 4.5 V, ID = 22 A 10.5 Rg Gate Resistance 0.5 td(on) Turn-On Delay Time VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, Rg = 6 tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 8 IF = 2.9 A, dI/dt = 100 A/s 1.5 2.6 17 30 11 20 125 180 47 70 50 80 ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 VGS = 5 V thru 2.5 V 50 ID - Drain Current (A) ID - Drain Current (A) 50 40 2V 30 20 10 40 30 TC = 125 C 20 25 C 10 1.5 V - 55 C 0 0 www.vishay.com 2 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 Document Number: 71358 S09-0228-Rev. E, 09-Feb-09 Si4442DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 6000 0.010 Ciss VGS = 2.5 V C - Capacitance (pF) RDS(on) - On -Restistance () 5000 0.008 0.006 VGS = 4.5 V 0.004 4000 3000 2000 Coss 0.002 1000 Crss 0 0.000 0 10 20 30 40 50 0 60 12 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Capacitance 30 1.8 VDS = 15 V ID = 22 A VGS = 4.5 V ID = 22 A 1.6 6 4 1.4 (Normalized) R DS(on) - On-Resistance 8 2 1.2 1.0 0.8 0.6 - 50 0 0 20 40 60 80 100 - 25 0 Gate Charge 50 75 100 125 150 On-Resistance vs. Junction Temperature 0.020 RDS(on) - On-Resistance () 60 TJ = 150 C 10 TJ = 25 C 1 0.00 25 TJ - Junction Temperature (C) Qg - Total Gate Charge (nC) IS - Source Current (A) 18 On-Resistance vs. Drain Current 10 VGS - Gate-to-Source Voltage (V) 6 0.016 0.012 0.008 ID = 22 A 0.004 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Document Number: 71358 S09-0228-Rev. E, 09-Feb-09 10 www.vishay.com 3 Si4442DY Vishay Siliconix 0.4 60 0.2 50 ID = 250 A 40 0.0 Power (W) VGS(th) Variance (V) TYPICAL CHARACTERISTICS 25 C, unless otherwise noted - 0.2 30 - 0.4 20 - 0.6 10 - 0.8 - 50 - 25 0 25 50 75 100 125 0 10-2 150 10-1 1 10 TJ - Temperature (C) Time (s) Threshold Voltage Single Pulse Power 100 600 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 67 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71358. www.vishay.com 4 Document Number: 71358 S09-0228-Rev. E, 09-Feb-09 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0 8 0 8 S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000