QM20KD-HB - Mitsubishi Electric Semiconductor

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM20KD-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

APPLICATION

Inverters, Servo drives, DC motor controllers, NC equipment, Welders.

QM20KD-HB

•ICCollector current .......................... 20A

•VCEX Collector-emitter voltage ........... 600V

•hFE DC current gain............................. 250

•Insulated Type

•UL Recognized

Yellow Card No. E80276 (N)

File No. E80271

KP BuP BvP BwP

BwNBvNBuN

ATSR

UVW

N

42

30

9

18

11

18 15 8

18

93

110

R6 11 11 12.5 10.5 10.5 18.5

(24.45)

(23.6)

BwP

W

BwN

BvP

BvN

V

U

BuP

BuN

PK

R

S

A

T

N

15

6.5

2–φ5.5

LABEL

Tab#110,

t=0.5

Tab#250,

t=0.8

Feb.1999

Min.

—

250

—

Symbol

ICEX

ICBO

IEBO

VCE (sat)

VBE (sat)

–VCEO

hFE

ton

ts

tf

Rth (j-c) Q

Rth (j-c) R

Rth (c-f)

Test conditions

VCE=600V, VEB=2V

VCB=600V, Emitter open

VEB=7V

IC=20A, IB=80mA

–IC=20A (diode forward voltage)

IC=20A, VCE=2V

VCC=300V, IC=20A, IB1=120mA,–IB2=0.4A

Transistor part (per 1/6 module)

Diode part (per 1/6 module)

Conductive grease applied

Parameter

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-emitter reverse voltage

DC current gain

Switching time

Thermal resistance

(junction to case)

Contact thermal resistance

(case to fin)

Conditions

Charged part to case, AC for 1 minute

Mounting screw M5

Typical value

MITSUBISHI TRANSISTOR MODULES

QM20KD-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Inverter part, Tj=25°C)

Symbol

VCEX (SUS)

VCEX

VCBO

VEBO

IC

–IC

PC

IB

–ICSM

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Collector reverse current

Collector dissipation

Base current

Surge collector reverse current

(forward diode current)

Conditions

IC=1A, VEB=2V

VEB=2V

Emitter open

Collector open

DC

DC (forward diode current)

TC=25°C

DC

Peak value of one cycle of 60Hz (half wave)

Ratings

600

7

20

83

1

200

Unit

V

A

W

A

ABSOLUTE MAXIMUM RATINGS (Converter part, Tj=25°C)

Symbol

VRRM

VRSM

Ea

IO

IFSM

I2t

Parameter

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

Recommended AC input voltage

DC output current

Surge (non-repetitive) forward current

I2t for fusing

Conditions

Three phase full wave rectifying circuit, Tc=79°C

One half cycle at 60 Hz, peak value

Value for one cycle of surge current

Ratings

800

900

220

30

300

375

Unit

V

A

A2s

ABSOLUTE MAXIMUM RATINGS (Common)

Symbol

Tj

Tstg

Viso

—

Parameter

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Weight

Ratings

–40~150

–40~125

2500

1.47~1.96

15~20

125

Unit

°C

V

N·m

kg·cm

g

Unit

mA

V

—

µs

°C/W

Limits

Typ.

—

Max.

1.0

40

2.0

2.5

1.5

—

1.5

12

2.0

1.5

2.5

0.35

ELECTRICAL CHARACTERISTICS (Inverter part, Tj=25°C)

Parameter

Repetitive peak reverse current

Forward voltage

Thermal resistance

Contact thermal resistance

Test conditions

VR=VRRM, Tj=150°C

IF=30A

Junction to case

Case to fin, conductive grease applied

ELECTRICAL CHARACTERISTICS (Converter part, Tj=25°C)

Symbol

IRRM

VFM

Rth (j-c)

Rth (c-f)

Unit

mA

V

°C/W

Limits

Max.

5.0

1.3

0.9

0.35

Min.

—

Typ.

—

Feb.1999

PERFORMANCE CURVES

COMMON EMITTER OUTPUT

CHARACTERISTICS (TYPICAL)

COMMON EMITTER INPUT

CHARACTERISTIC (TYPICAL)

SATURATION VOLTAGE

CHARACTERISTICS (TYPICAL)

COLLECTOR-EMITTER SATURATION

VOLTAGE (TYPICAL)

SWITCHING TIME VS. COLLECTOR

CURRENT (TYPICAL)

DC CURRENT GAIN VS.

COLLECTOR CURRENT (TYPICAL)

COLLECTOR CURRENT IC (A)

DC CURRENT GAIN hFE

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

BASE CURRENT IB (A)

COLLECTOR-EMITTER SATURATION

VOLTAGE VCE (sat) (V)

SATURATION VOLTAGE VCE (sat), VBE (sat) (V)SWITCHING TIME ton, ts, tf (µs)

COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)

BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)

MITSUBISHI TRANSISTOR MODULES

QM20KD-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

–1

10

0

10

7

5

4

3

2

–2

10

7

5

4

3

2

1.0 1.4 1.8 2.2 2.6 3.0

VCE=2.0V

Tj=25°C

1

10

7

5

4

3

2

0

10

7

5

4

3

2

–1

10 0

10 23457 1

10 23457 2

10

VBE(sat)

VCE(sat)

Tj=25°C

Tj=125°C

IB=80mA

50

40

30

20

10

001 2 3 4 5

Tj=25°C

IB=20mA

IB=40mA

IB=80mA

IB=200mA

IB=400mA

3

10

7

5

4

3

2

10

7

5

4

3

20

10 23457 1

10 23457 2

10

2

VCE=2.0V

VCE=5.0V

Tj=25°C

Tj=125°C

0

10

–1

10 75432

0

1

2

3

4

5

7

543

–2

10 2

Tj=25°C

Tj=125°C

IC=15A IC=20A

IC=25A

1

10

7

5

4

3

2

0

10

7

5

4

30

10 23457 1

10 23457 2

10

3

2IB1=120mA

VCC=300V

ts

ton

tf

IB2=–400mA

Tj=25°C

Tj=125°C

Feb.1999

SWITCHING TIME VS. BASE

CURRENT (TYPICAL)

REVERSE BIAS SAFE OPERATING AREA

SWITCHING TIME ts, tf (µs)

COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)

FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.

COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)

REVERSE COLLECTOR CURRENT VS.

COLLECTOR-EMITTER REVERSE

VOLTAGE (DIODE FORWARD

CHARACTERISTICS) (TYPICAL)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (TRANSISTOR)

COLLECTOR-EMITTER REVERSE VOLTAGE

–VCEO (V)

TIME (s)

COLLECTOR CURRENT IC (A)

COLLECTOR CURRENT IC (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –IC (A)

MITSUBISHI TRANSISTOR MODULES

QM20KD-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

Zth (j–c) (°C/ W)

0

10

1

10

–1

10

–2

10

0

10

–3

10

2

10

1

10

0

10

0

10

1

10

2

10

3

10

–1

10

100

80

60

40

20

00 20 60 100 120 16040 80 140

10

30

50

70

90

1

10

7

5

4

3

2

0

10

7

5

4

3

3457

0

10

23

2

–1

10

2

3

45 7

1

10

t

s

T

j

=25°C

T

j

=125°C I

B1

=120mA

V

CC

=300V

I

C

=20A

t

f

50

00 800

600200

30

40

20

10

400 700500100 300

T

j

=125°C

I

B2

=–0.5A

I

B2

=–3A

753275327532

7

5

3

2

7

5

3

2

7

5

3

2

200µs

5ms

DC

100µs

50µs

10ms

1ms

T

C

=25°C

2

10

1

10

7

5

4

3

2

0

10

7

5

4

3

2

0.4 0.8 1.2 1.6 2.0 2.4

T

j

=25°C

T

j

=125°C

753275327532

2.0

0

7532

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

T

C

=25°C

NON-PEPETITIVE

COLLECTOR

DISSIPATION

SECOND

BREAKDOWN

AREA

Feb.1999

Irr (A), Qrr (µc)

SURGE COLLECTOR REVERSE CURRENT

–ICSM (A)

trr (µs)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTIC (DIODE)

RATED SURGE COLLECTOR REVERSE CURRENT

(DIODE FORWARD SURGE CURRENT)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE (TYPICAL)

CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)

TIME (s)

Zth (j–c) (°C/ W)

MITSUBISHI TRANSISTOR MODULES

QM20KD-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

0

10 1

10

–1

10

–2

10

–3

10 0

10

2

10

1

10 75432

0

10 75432

0

40

80

120

160

200

60

100

140

180

20

753275327532

2.0

0

7532

0.8

0.4

1.2

1.6

2.4

2.8

3.2

1

10

7

5

4

3

2

0

10

7

5

4

3

2

–1

10 0

10 23457 1

10 23457 2

10

2

10

1

10

0

10

Irr

Qrr

trr

VCC=300V

IB1=120mA

IB2=–400mA

Tj=25°C

Tj=125°C

Feb.1999

POWER DISSIPATION P (W)

MAXIMUM POWER DISSIPATION ALLOWABLE CASE TEMPERATURE

VS. DC OUTPUT CURRENT

DC OUTPUT CURRENT IO (A) DC OUTPUT CURRENT IO (A)

MITSUBISHI TRANSISTOR MODULES

QM20KD-HB

MEDIUM POWER SWITCHING USE

INSULATED TYPE

MAXIMUM FORWARD CHARACTERISTIC

FORWARD CURRENT IF (A)

FORWARD VOLTAGE VF (V)

PERFORMANCE CURVES (Converter parts)

SURGE (NON-REPETITIVE) FOWARD

CURRENT IFSM (A)

ALLOWABLE SURGE (NON-REPETITIVE)

FORWARD CURRENT

CONDUCTION TIME (CYCLES AT 60HZ)

CASE TEMPERATURE TC (°C)

3

10

2

10

1

10

0

10

2

10

1

10 75432

0

10 75432

0

100

200

300

400

500

7

5

3

2

7

5

3

2

7

5

3

2

0.8 1.2 1.6 2.0 2.4

T

j

=25°C

100

80

60

40

20

00 8 16 24 32 40

160

140

120

100

80

60 0 8 16 24 32 40

RESISTIVE, INDUCTIVE LOAD