Features CYPRESS e Automatic power-down when dese- lected High speed 15ns Low active power 275 mW 83 mW Low standby power CMOS for optimum speed/power e TTL-compatible inputs and outputs Capable of withstanding greater than 2001V electrostatic discharge Vyny of 2.2V SEMICONDUCTOR CY7C167A Functional Description The CY7C167A is a high-performance CMOS static RAM organized as 16,384 words by 1 bit. Easy memory expansion is provided by an active LOW chip enable (CE) and three-state drivers. The CY7C167A has an automatic power-down feature, reducing the power consumption by 67% when deselected. Writing to the device is accomplished when thechipselect (CE) and write enable (WE) inputs are both LOW. Data on the input pin (DI) is written into the memory loca- tion specified on the address pins (Ay through Aj3). 16,384 x 1 Static RAM Reading the device is accomplished by tak- ing the chip enable (CE) LOW, while (WE) remains HIGH. Under these con- dintions, the contents of the location speci- fied on the address pins will appear on the data output (DO) pin. The output pin remains in a high-impe- dance state when chip enable is HIGH, or write enable (WE) is LOW. A die coat is used to insure alpha immunity. Logic Block Diagram tT Pin Configurations DIP Top View (INPUT BUFFER 7 7TCIB7A Ao Ay fi a Re g 128 x 128 z -> DO Ag w ARRAY 4 3 2 Ay g iy C167A~2 As Ag r ET CE COLUMN POWER DECODER |_| DOWN LP _ Ave ritt tit m Ato Be227z2 te Ar C1B7A-41 Ct67A-3 Selection Guide IC167A45 | 7C167A20 | 7C167A25 | 7C167A35 | 7C167A45 Maximum Access Time (ns) 15 20 25 35 45 MaximumOperating Commercial 90 80 60 60 50 Current(mA) Military 80 70 60) 50 2-2387 es CY7C167A $ SEMICONDUCTOR Maximum Ratings (Above which the useful life may be impaired. For user guidelines, | Output Currentinto Outpuis(LOW) ............... 20mA nottested.) Static Discharge Voltage ......0- 0.0... c eee eee >2001V Storage Temperature ..............00. 65C to + 150C (per MIL-STD-883, Method 3015) Ambient Temperature with Latch-UpCurrent ........... 0.0... c eee eee eee >200mA Applied ..... 0... eee 55 : Power Applie 55C to +125C Operating Range Supply Voltage to Ground Potential (Pin 20 to Pin 10) .....0...0.. eee 0.5V to +7.0V Ambient DC Voltage Applied to Outputs Range Temperature Vec in High ZState ........ 0... ee. 0.5V to +7.0V Commercial 0C to +70C SV + 10% DC Input Voltage ........ 0... cece eee 3.0V to +7.0V Military] 55C to 125C 5V + 10% Electrical Characteristics Over the Operating Rangel? 7C167A-15 | 7C167A20 | 7C167A~25 Parameters Description Test Conditions Min. | Max. | Min. | Max. | Min. | Max. | Units Vou Output High Voltage Vcc = Min. lon = 4.0mA 2.4 2.4 2..4 Vv VoL Output Low Voltage Vcc = Min., 0.4 0.4 0.4 v ToL = 12.0mA, 8.0 mA Mil Vin Input High Voltage 2.2 | Veco | 2.2 | Vee | 2.2 | Vee Vv VIL Input Low Voltagel3] -05] 08 |-O0O5] 08 |-05] 08 Vv yx Input Load Current GND < V) < Vcc -10 | +10 | -10 ] +10 | -10 7] +10 pA Ioz Output Leakage GND Vo < Vcc -10 | +10 | -10 | +10 | -10 | +10 pA Current Output Disabled los Output Short Vcc = Max., Vout = GND ~350 ~350 ~350 |} mA CircuitCurrent!4] Icc Vcc Operating Voc = Max., Com! 90 80 60 mA Supply Current lout = 0mA Mil 80 70 Isp Automatic CE (5) Max. Vcc, Com! 40 40 20 mA Power-DownCurrent! CE > Vin Mil 40 30 IC167A35 7C167A45 Parameters Description Test Conditions Min, Max. Min. Max. Units Vou Output High Voltage Vcc = Min., lop = -4.0mA 2.4 2.4 Vv Voi Output Low Voltage Vcc = Min., 0.4 0.4 v IoL = 12.0mA, 8.0mA Mil Vin Input High Voltage 2.2 Vcc 2.2 Vcc Vv Vit Input Low Voltagel4] 0.5 0.8 = 0.5 0.8 Vv Ix Input Load Current GND < V| < Vcc -10 +10 -10 +10 pA loz Output Leakage GND < Vo < Vcc -10 +10 -10 +10 pA Current Output Disabled los Output Short Vcc = Max., Vout = GND 350 350 mA CircuitCurrent!4l lec Vcc Operating Voc = Max., Com! 60 50 mA Supply Current [our = OMA Mil 60 50 Isp Automatic CE (5) Max. Vcc, Com! 20 15 mA Power-DownCurrent CE> Vin Mil 20 20 Notes: 1. Ta is the instant on case temperature. 4. Duration of the short circuit should not exceed 30 seconds. 2. See the last page of this specification for Group A subgroup testing in- formation. 3. Vitmin. = 3.0V for pulse durations less than 30 ns. 2- 5, A pull-up resistor to Vcc on the CE input is required to keep the de- vice deselected during Vcc power-up, otherwise Isg will exceed values given. 239Ge CY7C167A EMICONDUCTOR Capacitance!! Parameters Description Test Conditions Max. Units CIN Input Capacitance Ta = 25C, f = 1 MHz, 10 pF Cout Output Capacitance Vec = 5.0V 10 pF Cor Chip Enable Capacitance 6 __pF AC Test Loads and Waveforms Rt 32992 (48142 MIL) AN 32002 (48192 MIL) ALL INPUT PULSES sv 5V OUTPUT T OUTPUT TT | 30 pF I 3028) 5 pF I : 30202 INCLUDING (255Q MIL) INCLUDING (25582 MIL) ses OS id owns (a) (b) C167A-4 Equivalent to: THEVENIN EQUIVALENT 12582 16702 OUTPUT O$<~"A--0 1.9V OUTPUT O_$wy $0 1.73V Commercial Military Switching Characteristics Over the Operating Rangel? 7] 7CIG7A15 | 7C167A20 | 7C167A25 | 7C167A35 | 7C167A45 Parameters Description Min. | Max. Min. | Max. Min. | Max. Min. | Max. Min. | Max. Units READ CYCLE tre Read Cycle Time Com! ] 15 20 25 30 40 ns Mil 20 25 35 40 ns taa Address to Data Valid Com! 15 20 25 30 40 ns Mil 20 25 35 40 ns toHAa Data Hold from AddressChange | 5 5 5 5 5 ns LACE CE LOW to Data Valid 15 20 25 35 45 ns tLZcE CE LOW to Low Z[) 5 5 5 5 5 ns tizcK CE HIGH to High ZI. 9] 8 8 10 15 15 | ns tpu CE LOW to Power-Up 0 0 0 0 0 ns tepp CE HIGH to Power-Down 15 20 20 20 25 ns WRITE CYCLEU0] twce Write Cycle Time 15 20 20 25 40 ns tsce CE LOW to Write End 12 15 20 25 30 ns taw Address Set-Up to Write End 12 15 20 25 30 ns tHa Address Hold from Write End 0 0 0 0 0 ns tsa Address Set-Up to Write Start 0 0 0 0 0 ns tpwE WE Pulse Width 12 15 15 20 20 ns tsp Data Set-Up to Write End 10 10 10 IS 15 ns tip Data Hold from Write End 0 0 0 0 0 ns tHZWE WE LOW to High Z/8. 9] 7 7 7 10 15 ns tL2wE WE HIGH to Low ZI8] 5 5 5 5 5 ns Notes: 6. Tested initially and after any design or process changes that may affect 9. these parameters. 7. Test conditions assume signal transition times of 5 ns or less, timing 10. reference levels of 1.5V, input pulse levels of 0) to 3,0V, and output loading of the specified IoL/IoH and 30-pF load capacitance. 8. Atany given temperature and voltage condition, ty1z is less than {17 for any given device. tuzce and tyzwe are tested with CL = S pF as in part (b) of AC Test Loads. Transition is measured +500 mV from steady state voltage. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signal must be LOW to initiate a write and either signa! can terminate a write by going HIGH. The data input set- 2-240 upand hold timing should be referenced to the rising edge of the signal thal terminates the write.~~ Bs CY7C167A SEMICONDUCTOR Switching Waveforms Read Cycle No, 1!!! 12] ADDRESS x taa | foHa DATA QUT PREVIOUS DATA VALID Kx xX DATA VALID tre SRAMs a INA C1B7A-6 Read Cycle No. 2!!! 13] tac CE a x tace Wee he tHzce HIGH HIGH IMPEDANCE IMPEDANCE DATA QUT SIMA DATA VALIO AN Vec le tpu + trp Ic SUPPLY c CURRENT 50% 50% *k ise C1i67A-7 Write Cycle No. 1 (WE Controlled)!!l ADDRESS cE fpwe WE tso tuo DATA-IN VALID DATA IN tHzwe > {Lzwe a IGH tMPEDANCE H DATA /O DATA UNDEFINED eer" C187A~-8 Notes: _ = cogs il. WE is high for read cycle. _ 14. If CEgocs HIGH simultancously with WE HIGH, the output remains 12. Device is continuously selected, CE = Vy. in a high-impedance state. 13. Address valid prior to or coincident with CE transition LOW. 2-241CY7C167A => SEMICONDUCTOR Switching Waveforms (continued) Write Cycle No. 2 (CE Controlted)!!0. 14] ADDRESS DATA IN tsp DATA-IN VALID DATA /O Typical DC and AC Characteristics NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE 1.4 1.2 1.0 0.8 0.6 0.4 NORMALIZED Ico | sp 0.2 0.0 4.0 Isp 45 5.0 5.5 SUPPLY VOLTAGE (V) NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE 1.4 1.3 1.2 Ta = 25C NORMAUZED tas 45 5.0 5.5 6.0 SUPPLY VOLTAGE (V) 6.0 DATA UNDEFINED NORMALIZED Ig | gp NORMALIZED tay tyzwe | \ HIGH IMPEDANCE _/ NORMALIZED SUPPLY CURRENT ys. AMBIENT TEMPERATURE 1.2 1.0 0.8 0.6 0.4 0.2 | SB 0.0 55 25 125 AMBIENT TEMPERATURE (C) NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE 1.6 1.4 - ea 1.0 Voc = 5.0V UE a 0.6 55 25 125 AMBIENT TEMPERATURE ("C) 2-242 C1B7A-9 OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE OUTPUT SOURCE CURRENT (mA) 0 0 1.0 2.0 3.0 OUTPUT VOLTAGE (V) 4.0 OUTPUT SINK CURRENT ys. OUTPUT VOLTAGE q 150 125 z 100 2 Oo ~ 75 zZ P50 2 f = 25 o 0 00 10 #20 30 40 50 OUTPUT VOLTAGE (V)) , oss CY7C167A FF SEMICONDUCTOR Typical DC and AC Characteristics (continued) TYPICAL POWER-ON CURRENT TYPICAL ACCESS TIME CHANGE vs. SUPPLY VOLTAGE vs. OUTPUT LOADING NORMALIZED Icc vs. CYCLE TIME 3.0 30.0 1.1 T Voc = 5.0V 3s a 8 | weowv a 2.0 3 20.0 g 1.0 a a 3 15 5 /Y 3 y 8 10 * 40.0 7 Veo = 45V 9 og 7 05 Ta = 25C 00 10 2.0 30 40 50 005 200 400 600 800 1000 085 20 30 40 SUPPLY VOLTAGE (V) CAPACITANCE (pF) CYCLE FREQUENCY (MHz) Ordering Information Speed | Icc Package | Operating Speed | Icc Package | Operating (ns) | (mA) Ordering Code Type Range (ns) | (mA) Ordering Code Type Range 15 80) | CY7C167A-15PC PS Commercial 35 60 | CY7C167A-35PC PS Commercial CY7C167A-15DC D6 CY7C167A-35DC D6 CY7C167A-15VC V5 CY7C167A-35LC L51 20 80 | CY7C167A-20PC P5S Commercial CY7C1I67A-35VC V5 CY7C167A-20DC D6 CY7C167A-35DMB D6 Military CY7C167A-20LC L51 CY7C167A-35LMB LS1 CY7C167A-20VC V5 CY7C167A-35KMB K71 CY7C167A-20DMB D6 Military 45 50) | CY7C167A-45PC PS Commercial CY7C167A-20LMB L51 CY7C167A-45DC D6 CY7C167A-20KMB K71 CY7C167A4-45LC L51 25 60) | CY7C167A-25PC PS Commercial CY7C167A-45VC V5 CY7C167A 25DC D6 CY7C167A-4SDMB D6 Military CY7C167A-25LC LS1 CY7C167A-45LMB L51 CYICIO7A-25VC V5 CY7C167A-45KMB K71 CY7C167A-25DMB D6 Military CY7C167A-25LMB L51 CY7C167A-25KMB K71 2-243 SRAMs aan. MP7 aes CY7C167A SEMICONDUCTOR MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics Parameters Subgroups Vou 1,2,3 VoL 1,2,3 Vin 1,2,3 Vit Max. 1.2.3 Ix 1,2,3 loz 1,2,3 loc 1,2,3 Isp 1,2,3 Switching Characteristics Parameters Subgroups READ CYCLE tre 7,8,9,10,11 tAA 7,8,9,10,11 LOHA 7,8,9,10,11 lace 7,8,9,10,11 WRITE CYCLE two 7,8,9,10,11 tscE 7,8,9,10,11 law 7,8,9,10,11 tHA 7,8,9,10,11 tsa 7,8,9,10,11 (PWE 7,8,9,10,11 tsp 7,8,9 10,11 tub 7,8,9,10,11 Document #: 3800093-B 2-244