DMN10H220LQ
Document number: DS39122 Rev. 2 - 2
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November 2016
© Diodes Incorporated
DMN10H220LQ
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
RDS(ON) max
ID max
TA = +25°C
100V
220mΩ @ VGS = 10V
1.6A
250mΩ @ VGS = 4.5V
1.3A
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Load Switch
Ordering Information (Note 5)
Part Number
Case
Packaging
DMN10H220LQ-7
SOT23
3,000/Tape & Reel
DMN10H220LQ-13
SOT23
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2016
2017
2018
2019
2020
2021
2022
Code
D
E
F
G
H
I
J
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Pin Configuration
D
GS
SOT23
D
S
G
Equivalent Circuit
N1H = Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
e3
DMN10H220LQ
Document number: DS39122 Rev. 2 - 2
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November 2016
© Diodes Incorporated
DMN10H220LQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±16
V
Continuous Drain Current (Note 6) VGS = 10V
(Note 7)
TA = +25C
TA = +70C
ID
1.6
1.3
A
(Note 6)
TA = +25C
TA = +70C
ID
1.4
1.1
A
Maximum Continuous Body Diode Forward Current (Note 7)
IS
0.6
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
IDM
8
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 7)
TA = +25°C
PD
1.3
W
TA = +70°C
0.8
Thermal Resistance, Junction to Ambient
(Note 6)
RθJA
94
°C/W
(Note 7)
177
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
100
—
—
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
—
—
1
μA
VDS = 100V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±16V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
1
—
2.5
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
—
—
220
mΩ
VGS = 10V, ID = 1.6A
—
250
VGS = 4.5V, ID = 1.3A
Diode Forward Voltage
VSD
—
0.7
1.2
V
VGS = 0V, IS = 1.1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
—
401
—
pF
VDS = 25V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
—
22
—
Reverse Transfer Capacitance
Crss
—
17
—
Gate Resistance
Rg
—
2.1
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
Qg
—
4.1
—
nC
VDS = 50V, ID = 1.6A
Total Gate Charge (VGS = 10V)
Qg
—
8.3
—
Gate-Source Charge
Qgs
—
1.5
—
Gate-Drain Charge
Qgd
—
2
—
Turn-On Delay Time
tD(ON)
—
6.8
—
ns
VDS = 50V, VGS = 4.5V,
RG = 6.8Ω,ID = 1A
Turn-On Rise Time
tR
—
8.2
—
Turn-Off Delay Time
tD(OFF)
—
7.9
—
Turn-Off Fall Time
tF
—
3.6
—
Reverse Recovery Time
tRR
—
17
—
ns
IF = 1.1A, di/dt =100A/μs
Reverse Recovery Charge
QRR
—
9.8
—
nC
Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
8 .Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMN10H220LQ
Document number: DS39122 Rev. 2 - 2
3 of 7
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November 2016
© Diodes Incorporated
DMN10H220LQ
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0 0.5 1 1.5 2 2.5 3
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I , DRAIN CURRENT (A)
D
V = 3.5V
GS
V = 4.0V
GS
V = 8.0V
GS
V = 9.0V
GS
V = 10V
GS
V = 4.5V
GS
V = 5.0V
GS
V = 6.0V
GS
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0 1 2 3 4 5 6 7 8 9 10
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
GS
V = 10V
GS
2 4 6 8 10 12 14 16 18 20
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristic
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
I = 200mA
D
I = 100mA
D
0
0.5
1
1.5
2
2.5
3
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 4.5V
I = 5A
GS
D
V = V
I = 10A
GS
D
10
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0
1
2
3
4
5
6
7
8
9
10
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R
,
D
R
A
I
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
(
)
D
S
(
O
N
)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
0
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I
,
D
R
A
I
N
C
U
R
R
E
N
T
(
A
)
D
V = 10V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
ID, DRAIN CURRENT (A)
DMN10H220LQ
Document number: DS39122 Rev. 2 - 2
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November 2016
© Diodes Incorporated
DMN10H220LQ
0
0.1
0.2
0.3
0.4
0.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
V = 4.5V
I = 5A
GS
D
V = V
I = 10A
GS
D
10
10
100
1000
0 5 10 15 20 25 30 35 40
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C , JUNCTION CAPACITANCE (pF)
T
Ciss
Coss
Crss
f = 1MHz
0
2
4
6
8
10
0 2 4 6 8 10
Q (nC)
g, TOTAL GATE CHARGE
Figure 11 Gate Charge
V GATE THRESHOLD VOLTAGE (V)
GS
V = 50V
I = A
DS
D
1.6
0
1
2
3
4
5
6
7
8
9
10
0
0.3
0.6
0.9
1.2
1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
1
1.3
1.6
1.9
2.2
2.5
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Junction Temperature
J
I = 1mA
D
I = 250µA
D
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(
t
h
)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
IS, SOURCE CURRENT (A)
DMN10H220LQ
Document number: DS39122 Rev. 2 - 2
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DMN10H220LQ
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse R (t) = r(t) * R
R = 172
癈
/W
Duty Cycle, D = t1/ t2

JA JA
JA
RθJA (t)=r(t) * RθJA
RθJA=172℃/W
Duty Cycle, D=t1/t2
DMN10H220LQ
Document number: DS39122 Rev. 2 - 2
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© Diodes Incorporated
DMN10H220LQ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
0°
8°
--
All Dimensions in mm
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
X
Y
Y1 C
X1
DMN10H220LQ
Document number: DS39122 Rev. 2 - 2
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DMN10H220LQ
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