DMN10H220LQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features and Benefits ID max RDS(ON) max TA = +25C 220m @ VGS = 10V 1.6A 250m @ VGS = 4.5V 1.3A 100V Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Load Switch Case: SOT23 Case Material: Molded Plastic, Green Molding Compound, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.009 grams (Approximate) D SOT23 D G S G S Top View Pin Configuration Equivalent Circuit Ordering Information (Note 5) Part Number DMN10H220LQ-7 DMN10H220LQ-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information N1H = Marking Code YM = Date Code Marking Y or Y = Year (ex: D = 2016) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMN10H220LQ Document number: DS39122 Rev. 2 - 2 Mar 3 2018 F Apr 4 May 5 2019 G Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 Aug 8 2021 I Sep 9 Oct O 2022 J Nov N Dec D November 2016 (c) Diodes Incorporated DMN10H220LQ Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage (Note 7) Continuous Drain Current (Note 6) VGS = 10V (Note 6) TA = +25C TA = +70C TA = +25C TA = +70C Value 100 16 1.6 1.3 ID A 1.4 1.1 0.6 8 ID Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Drain Current (10s pulse, duty cycle = 1%) Units V V IS IDM A A A Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol TA = +25C TA = +70C (Note 6) (Note 7) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient PD RJA Operating and Storage Temperature Range Electrical Characteristics Value 1.3 0.8 94 177 -55 to +150 TJ, TSTG Units W C/W C (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 -- -- -- -- -- -- 1 100 V A nA VGS = 0V, ID = 250A VDS = 100V, VGS = 0V VGS = 16V, VDS = 0V VGS(TH) 1 RDS(ON) -- VSD -- 2.5 220 250 1.2 V Static Drain-Source On-Resistance -- -- -- 0.7 VDS = VGS, ID = 250A VGS = 10V, ID = 1.6A VGS = 4.5V, ID = 1.3A VGS = 0V, IS = 1.1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR -- -- -- -- -- -- -- -- -- -- -- -- -- -- 401 22 17 2.1 4.1 8.3 1.5 2 6.8 8.2 7.9 3.6 17 9.8 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: m V Test Condition pF VDS = 25V, VGS = 0V f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 50V, ID = 1.6A ns VDS = 50V, VGS = 4.5V, RG = 6.8,ID = 1A ns nC IF = 1.1A, di/dt =100A/s 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 8 .Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMN10H220LQ Document number: DS39122 Rev. 2 - 2 2 of 7 www.diodes.com November 2016 (c) Diodes Incorporated DMN10H220LQ 10.0 10 9.0 9 VDS = 10V VGS = 6.0V ID, DRAIN CURRENT (A) VGS = 10V 7.0 8 )A ( T 7 N E R 6 R U C 5 N I A R 4 D ,D3 I ID, DRAIN CURRENT (A) 8.0 VGS = 9.0V VGS = 5.0V VGS = 8.0V 6.0 VGS = 4.5V 5.0 4.0 VGS = 4.0V 3.0 2.0 0.3 VGS = 4.5V 0.2 0.15 VGS = 10V 0.1 0.05 0 1 2 3 4 5 6 7 8 9 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.35 0.25 0 3 0.4 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 10 2 3 4 5 6 7 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics ID = 200mA ID = 100mA 2 4 6 8 10 12 14 16 18 V GS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 20 3 0.70 VGS = 4.5V 0.60 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 R TA = 25C TA = -55C 1 VGS = 3.5V 0.0 O (S D TA = 85C 2 1.0 ) ( E C N A T S IS E R -N O E C R U O S -N IA R D , )N TA = 150C TA = 125C 0.50 0.40 TA = 150C 0.30 TA = 125C TA = 85C 0.20 TA = 25C 0.10 2.5 VGS = 10 V ID = 10A 2 1.5 VGS = 4.5V ID = 5A 1 0.5 TA = -55C 0.00 0 1 2 3 4 5 6 7 8 9 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN10H220LQ Document number: DS39122 Rev. 2 - 2 10 3 of 7 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature November 2016 (c) Diodes Incorporated DMN10H220LQ 2.5 )V ( E G A T L O V D L O H S E R H T E T A G , )h VGS(TH), GATE THRESHOLD VOLTAGE (V) R DS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.5 0.4 0.3 VGS = 4.5V ID = 5A 0.2 VGS = 10 V ID = 10A 0.1 (tS G 2.2 ID = 1mA 1.9 ID = 250A 1.6 1.3 V 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature CT, JUNCTION CAPACITANCE (pF) 9 8 IS, SOURCE CURRENT (A) -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Junction Temperature 1000 10 )A ( T N E R R U C E C R U O S ,S I 1 -50 7 6 TA = 150C 5 100 TA = 125C 4 TA = 85C 3 TA = 25C 2 C iss C oss TA = -55C C rss 1 f = 1MHz 10 0 0 0.3 0.6 0.9 1.2 1.5 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 VGS GATE THRESHOLD VOLTAGE (V) 10 VDS = 50V ID = 1.6A 8 6 4 2 0 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN10H220LQ Document number: DS39122 Rev. 2 - 2 10 4 of 7 www.diodes.com November 2016 (c) Diodes Incorporated DMN10H220LQ r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RR * RJA JA (t)=r(t) JA(t) = r(t) * RJA RR JA=172/W = 172 /W JACycle, D=t1/t2 Duty Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 DMN10H220LQ Document number: DS39122 Rev. 2 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 November 2016 (c) Diodes Incorporated DMN10H220LQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm G F Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y Dimensions C X X1 Y Y1 C Y1 X DMN10H220LQ Document number: DS39122 Rev. 2 - 2 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com November 2016 (c) Diodes Incorporated DMN10H220LQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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