PTF180101S - Infineon Technologies

Data Sheet 12004-02-03

EDGE EVM Performance

EVM and Efficiency vs. Output Power

VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz

25 30 35 40

Output Power (dBm)

EVM RMS (Average %)x

Efficiency (%)

EVM

Efficiency

PTF180101

Features

•Typical EDGE performance

- Average output power = 4.0 W

- Gain = 19.0 dB

- Efficiency = 28%

- EVM = 1.1 %

•Typical WCDMA performance

- Average output power = 1.8 W

- Gain = 18.0 dB

- Efficiency = 20%

- ACPR = –45 dBc

•Typical CW performance

- Output power at P–1dB = 15 W

- Efficiency = 50%

•Integrated ESD protection:

Human Body Model Class 1 (minimum)

•Excellent thermal stability

•Low HCI drift

•Capable of handling 10:1 VSWR @ 28 V,

10 W (CW) output power

RF Characteristics, EDGE Operation at TCASE = 25°C unless otherwise indicated

EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 28 V, IDQ = 180 mA, POUT = 4 W, f = 1989.8 MHz

Characteristic Symbol Min Typ Max Units

Error Vector Magnitude EVM (RMS) —1.1 —%

Modulation Spectrum @ 400 kHz ACPR —–60 —dBc

Modulation Spectrum @ 600 kHz ACPR —–70 —dBc

Gain Gps —19 —dB

Drain Efficiency ηD—28 —%

Two–Tone Measurements (tested in Infineon test fixture)

VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz

Characteristic Symbol Min Typ Max Units

Gain Gps 18 19 —dB

Drain Efficiency ηD30 33 —%

Intermodulation Distortion IMD —–30 –28 dBc

LDMOS RF Power Field Effect Transistor

10 W, 1805–1880 MHz, 1930–1990 MHz

10 W, 2110–2170 MHz

Description

The PTF180101 is a 10 W, internally–matched GOLDMOS FET device in-

tended for EDGE applications in the DCS/PCS band. Full gold metallization

ensures excellent device lifetime and reliability.

ESD: Electrostatic discharge sensitive device — observe handling precautions!

PTF180101S

Package 32259

Data Sheet 22004-02-03

PTF180101

RF Characteristics, WCDMA Operation at TCASE = 25°C unless otherwise indicated

WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 28 V, IDQ = 135 mA, POUT = 1.8 W,

f = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.7 dB @ 0.01% CCDF

Characteristic Symbol Min Typ Max Units

Adjacent Channel Power Ratio ACPR —–45 —dBc

Gain Gps —18 —dB

Drain Efficiency ηD—20 —%

Two–Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 28 V, IDQ = 135 mA, POUT = 10 W PEP, f = 2170 MHz, tone spacing = 1 MHz

Characteristic Symbol Min Typ Max Units

Gain Gps —18 —dB

Drain Efficiency @ –30 dBc IM3 ηD—37 —%

Intermodulation Distortion IMD —–30 —dBc

DC Characteristics at TCASE = 25°C unless otherwise indicated

Characteristic Conditions Symbol Min Typ Max Units

Drain–Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V

Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA

On–State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) —0.83 —Ω

Operating Gate Voltage VDS = 28 V, IDQ = 180 mA VGS 2.5 3.2 4.0 V

Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA

Maximum Ratings at TCASE = 25°C unless otherwise indicated

Parameter Symbol Value Unit

Drain–Source Voltage VDSS 65 V

Gate–Source Voltage VGS –0.5 to +12 V

Junction Temperature TJ200 °C

Total Device Dissipation PD58 W

Above 25°C derate by 0.333 W/°C

Storage Temperature Range TSTG –40 to +150 °C

Thermal Resistance (TCASE = 70°C, 10 W CW) RθJC 3.0 °C/W

Data Sheet 32004-02-03

PTF180101

EDGE Modulation Spectrum Performance

VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz

-100

-90

-80

-70

-60

-50

25 30 35 40

Output Power (dBm)

ACPR (dBc)

Efficiency (%)

Efficiency

400 kHz

600 kHz

0.00 0.05 0.10 0.15 0.20 0.25 0.30

Quiscent Drain Current (A)

EVM RMS (Average %)

-110

-100

-90

-80

-70

-60

-50

-40

ACPR (dBc)

EVM and Modulation Spectrum Performance

f = 1989.8 MHz, POUT = 3.5 W

EVM

400 kHz

600 kHz

Typical Performance measurements taken in broadband test fixture

Gain & Efficiency vs. Output Power

VDD = 28 V, IDQ = 0.18 A, f = 1990 MHz

29 32 35 38 41 44

Output Power (dBm)

Gain (dB)

Efficiency (%)

Efficiency

Gain

Output Power, Gain & Efficiency

(at P-1dB)

vs. Frequency

VDD = 28 V, IDQ = 0.18 A

1900 1920 1940 1960 1980 2000 2020

Frequency (MHz)

Gain (dB)

Output Power (dBm),

Efficiency (%)

Gain

Efficiency

Output Power

Data Sheet 42004-02-03

PTF180101

Broadband Test Fixture Performance

VDD = 28 V, IDQ = 0.18 A, POUT = 4 W

1900 1930 1960 1990 2020

Frequency (MHz)

Gain (dB), Efficiency (%)

-40

-30

-20

-10

Return Loss (dB)

Gain

Return Loss

Efficiency

Output Power vs. Supply Voltage

IDQ = 0.18 A, f = 1990 MHz

22 24 26 28 30 32

Supply Voltage (V)

Output Power (dBm)

Typical Performance (cont.)

Power Gain vs. Output Power

VDD = 28 V, f = 1990 MHz

0 1 10 100

Output Power (W)

Power Gain (dB)

IDQ = 0.135 mA

IDQ = 0.180 mA

IDQ = 0.235 mA

Broadband Test Fixture Performance

VDD = 28 V, IDQ = 0.18 A, POUT = 10 W

1900 1930 1960 1990 2020

Frequency (MHz)

Gain (dB), Efficiency (%)

-35

-25

-15

-5

Return Loss (dB)

Gain

Return Loss

Efficiency

Data Sheet 52004-02-03

PTF180101

Typical Performance (cont.)

Two–Tone Drive–up

VDD = 28V, IDQ

= 135 mA, f = 2170 MHz,

tone spacing = 1 MHz

-60

-55

-50

-45

-40

-35

-30

-25

-20

20 25 30 35 40 45

Output Power (dBm), PEP

Intermodulation

Distortion (dBc)

Drain Efficiency (%)

IM3

Efficiency

Single–Carrier WCDMA Drive–Up

VDD = 28 V, IDQ = 135 mA, f = 2170 MHz,

3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67%

clipping, P/A R = 8.7 dB, 3.84 MHz bandwidth

-60

-55

-50

-45

-40

-35

17 22 27 32 37

Average Output Power (dBm)

Adjacent Channel

Power Ratio (dBc)

Drain Efficiency (%)

ACPR

Efficiency

-80

-70

-60

-50

-40

-30

-20

30 32 34 36 38 40 42

Output Power, PEP (dBm)

IMD (dBc)

Intermodulation Distortion vs. Output Power

VDD = 28 V, IDQ = 0.18 A, f1 = 1990 MHz, f2 = 1991 MHz

3rd Order

7th

5th

0.96

0.97

0.98

0.99

1.00

1.01

1.02

1.03

1.04

-20 0 20 40 60 80 100

Case Temperature (°C)

Normalized Bias Voltage

0.05 A

0.28 A

0.51 A

0.74 A

0.97 A

1.20 A

Gate-Source Voltage vs. Case Temperature

Voltage normalized to typical gate voltage.

Typical Performance, WCDMA Operation

Series show current.

Data Sheet 62004-02-03

PTF180101

0.1

0.2

0.1

2020 MHz

1920 MHz

Z Load

Z Source

Z Source Z Load

Z0 = 50 Ω

Broadband Circuit Impedance Data

Frequency Z Source ΩZ Load Ω

MHz RjX RjX

1920 7.3 -2.3 4.6 2.4

1930 8.1 -2.2 4.6 2.5

1960 8.3 -2.6 4.5 2.6

1990 6.5 -4.1 4.5 2.5

2000 6.3 -4.0 4.5 2.5

2020 6.2 -3.7 4.6 2.5

Data Sheet 72004-02-03

PTF180101

Microstrip Electrical Characteristics at 1990 MHz Dimensions: L x W (mm) Dimensions: L x W (in.)

l10.133 λ, 50 Ω10.92 x 1.37 0.430 x 0.054

l20.096 λ, 50 Ω7.87 x 1.37 0.310 x 0.054

l30.155 λ, 9.5 Ω11.30 x 12.45 0.445 x 0.490

l40.008 λ, 12.8 Ω0.64 x 8.86 0.025 x 0.349

l50.286 λ, 70 Ω23.88 x 0.71 0.940 x 0.028

l60.247 λ, 12.8 Ω18.29 x 8.86 0.720 x 0.349

l70.145 λ, 50 Ω11.81 x 1.37 0.465 x 0.054

l80.008 λ, 50 Ω0.64 x 1.37 0.025 x 0.054

Reference Circuits

Circuit Assembly Information

DUT PTF180101 LDMOS Transistor

Circuit Board 0.76 mm [.030”] thick, εr = 4.5 Rogers TMM4, 2 oz. Copper

Reference Circuit Schematic

180101_sch

RF_IN

VGG R1

DUT

C5 C6

RF_OUT

DDV

l1l2l3l4

l6l7l8

Data Sheet 82004-02-03

PTF180101

Reference circuit assembly diagramt1 (not to scale)

1 Gerber files for this circuit are available upon request.

1930–1990 MHz Operation

Component Description Manufacturer P/N or Comment

C1, C3, C5, C8 Capacitor, 10 pF ATC 100B 100

C2 Capacitor, 1.7 pF ATC 100B 1R7

C4 Capacitor, 2.0 pF ATC 100A 2R0

C6 Capacitor, 0.1 µF, 50 V Digi-Key P4525-ND

C7 Capacitor, 100 µF, 50 V Digi-Key P5182-ND

C9 Capacitor, 0.6 pF ATC 100A 0R6

R1, R2, R3 Resistor, 220 ohm, 1/4 W Digi-Key 220QBK

2.11–2.17 GHz Operation

Component Description Manufacturer P/N or Comment

C1, C3, C5, C8 Capacitor, 10 pF ATC 100B 100

C2 Capacitor, 0.8 pF ATC 100B 0R8

C4 Capacitor, 2.2 pF ATC 100A 2R2

C6 Capacitor, 0.1 µF, 50 V Digi-Key P4525-ND

C7 Capacitor, 100 µF, 50 V Digi-Key P5182-ND

C9 Capacitor, 1.0 pF ATC 100A 1R0

R1, R2, R3 Resistor, 220 ohm, 1/4 W Digi-Key 220QBK

Reference Circuits (cont.)

Data Sheet 92004-02-03

PTF180101

Ordering Information

Type Package Outline Package Description Marking

PTF180101S 32259 Thermally enhanced, surface mount PTF180101S

Notes: Unless otherwise specified

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. Pins: D = drain, S = source, G = gate

4. Lead thickness: 0.21 ± 0.03 [.008 ± .001]

Package Outline Specifications

Package 32259

2X 3.30

[.130]

1.02 [0.040]

0.51 [0.020]

2X 0.20±0.03

[.008±.001]

4X R0.25

[R.010]

MAX.

0°-7°

DRAFT ANGLE

10.16±0.25

[.400±.010]

6.86

[.270]

2X 1.65±0.51

[.065±.020]

2X 1.27

[.050]

2X 3.30

[.130]

4X 0.51

[.020]

4X 0.25 MAX

[.010]

6.35

[.250] SQ

6.86

[.270]

6.48

[.255] SQ

0.74±0.05

[.028±.002]

1.78

[.070]

2.99 ±0.38

[1.14 ±.010]

H-32259-2-1-2307

LEAD COPLANARITY

BOTTOM OF LEAD

TO BOTTOM OF PACKAGE

.000±.002 (TYP)

60° X 6.60

[60° X .260]

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/products

Edition 2004-02-03

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

81669 München, Germany

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,

descriptions and charts stated herein.

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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office (www.infineon.com/rfpower).

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Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

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Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support

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PTF180101

Revision History: 2004-02-03 Data Sheet

Previous Version: none

Page Subjects (major changes since last revision)

1, 5, 7 Add information about WCDMA operation