H2DQDG8VD1MYR-BC - SK Hynix

Green Environment

Green Products for

a Greener Tomorrow

DRAM and NAND Flash memories are focus products

CMOS Image Sensors will diversify Hynix product portfolio

2009 Revenues of USD $6.2B

Market capitalization of USD $12B as of July 2010

Global presence with 3 manufacturing sites and 30 sales offices worldwide

17,302 employees worldwide

The simply designed symbolic mark of superposition of two circles implies Hynix's will to

develop environment-friendly products.

The image of a sprout and green wings representing reborn nature symbolizes Hynix's

volitional environmental management initiative. The 'Eco-mark' conveys our passions to

contribute to customers and society with ecological practices (Environment Consciousness

Outreach), and environmental awareness of each employee (Environment Creates Ourselves).

Corporate Profile

Hynix Semiconductor is a leading supplier of advanced semiconductor

memory solutions and Image sensor products. We design, develop,

manufacture and market a wide variety of DRAM and NAND Flash memories

and CMOS Image Sensors (CIS). These memory components are essential in

today’s leading-edge computing, consumer and wireless communications

applications. Image Sensors are used in a wide range of portable consumer

electronics products such as handsets and handheld games.

Green Products for a Greener Tomorrow

Recent

Accomplishments

2010

07 Developed 44nm 2Gb DDR3 1866Mbps

06 Developed 44nm DDR3 operating at 1.25V

04 Developed DDR3 16GB LRDIMM

03 Developed industry’s first stack based on ‘Wafer Level Package’ technology

02 Developed 26nm 64Gb NAND Flash memory

01 Developed the world’s first 2Gb Mobile Low Power DDR2 DRAM

2009

12 Introduced the world's first 44nm 2Gb GDDR5 DRAM

11 Acquired Intel validation for 44nm 2Gb DDR3 Products

10 Introduced second generation 1Gb DDR3

08 Introduced 4Gb Mobile DDR SDRAM supported on Intel’s Moorestown platform

04 Developed the world’s first Low Power-High speed Mobile 1Gb DDR2 DRAM

03 Announced the world’s first 8GB 2-Rank DDR3 R-DIMM validation

02 Developed the world’s first 44nm DDR3 DRAM

01 Acquired Intel validation for the world’s first ultra-high speed DDR3 based

4GB ECC UDIMM for servers

2008

12 Developed the world’s first 2Gb Mobile DRAM

11 Introduced Industry's fastest 7Gbps, 1Gb GDDR5 Graphics DRAM

04 Developed the world's fastest Mobile LPDDR2

02 Introduced 2-Rank 8GB DDR2 RDIMM

01 Announced 800MHz, 1GB/2GB UDIMM Validation

2007

11 Acquired Intel validation for 1Gb DDR2 DRAM

Developed industry's first 1Gb GDDR5 DRAM

09 Developed the world's first NAND Flash MCP with 24 stacked chips

08 Developed industry's fastest and smallest 1Gb Mobile DRAM

05 Acquired the industry's first validation on DDR3 DRAMs from Intel

03 Developed the world's fastest ECC Mobile DRAM

Developed the fastest memory module based on 'Wafer Level Package' technology

2006

12 Announced industry's first 60nm 1Gb DDR2 800MHz based modules

Developed the world's fastest 200MHz 512Mb mobile DRAM

09 Launched 300mm research fab line

03 Acquired the industry's first validation on 80nm 512Mb DDR2 DRAMs from Intel

01 Announced joint development plan of DOC H3 (new generation DiskOnChip

embedded flash drive) with M-Systems

2005

12 Developed the world's first 512Mb GDDR4, the industry's fastest and highest

density graphics DRAM

11 Launched the industry's first JEDEC standard 8GB DDR2 R-DIMM

Launched Hynix-ST joint venture construction in Wuxi City, Jiangsu Province, China

2004

03 Developed the industry's first ultra-high speed DDR 550MHz

Acquired 1Gb DDR2 validation from Intel

02 Developed NAND Flash memory

2003

08 Developed the world's first DRAM 1Gb DDR2

07 Developed the world's first ultra-high speed DDR500

06 Acquired the industry's first Intel validation for 512Mb DDR400

05 Launched production on 0.10-micron process technology

Launched volume production of ultra-low power 256Mb SDRAM

04 Signed agreement with STMicroelectronics to cooperate in NAND Flash

memory development

03 Introduced the world's first commercially applicable mega-level FeRAM

2002

10 Developed 0.10-micron 512MB DDR

08 Developed the world's first high-density, wide-bandwidth 256MB DDR

06 Developed the world's first 256MB SDR for high-end consumer

application

03 Developed 1G DDR DRAM module

2001

12 Developed the world's first 128Mb DDR for graphics

08 Completed spin-off from Hyundai Group

03 Changed the Company name to "Hynix Semiconductor Inc."

1999

10 Merged with LG Semicon., Ltd.

1983

02 Founded Hyundai Electronics Industries Co., Ltd.

DDR2

VS.

DDR3

Key Features of High Speed Interface

DDR3

VS.

DDR3L

Power Comparison (Watt)

Items DDR2 DDR3 / DDR3L

Data Rate 400, 533, 667, 800Mbps 800,1066,1333,1600Mbps

VDD / VDDQ 1.8V +0.1V / -0.1V 1.5V 0.075V (DDR3)

1.35V 0.1V / -0.067V (DDR3L)

Support Density 256Mb ~ 4Gb 1Gb ~ 4Gb

Bank 512Mb : 4 Bank 8 Bank

1Gb : 8 Bank

Data Pre-fetch 4 bit 8 bit

Package Type 60 FBGA for x4 / x8 78 FBGA for x4 / x8

84 FBGA for x16 96 FBGA for x16

Interface SSTL-18 SSTL -15

DQS Signaling Single / Differential Differential Only

Driver Calibration Off-Chip Driver Calibration Self Calibration with ZQ pin

DQS-CLK De-Skewing (Write Leveling)

On Die Termination / Dynamic ODT

Reset pin (Soft power-up)

Main

Memory

DDR3

General Description

The mainstream, DDR3 SDRAM, can transfer data twice as fast as the current generation DDR2 SDRAM’s. DDR3 SDRAM boasts

high performance and low power consumption. It supports data transfer rate of up to 1.6Gb/s and operates at a lower power supply

voltage of 1.5V, compared to DDR2. The DDR3 SDRAM is eco-friendly for it can operate at even lower power supply voltage of

1.35V contributing to lower power dissipation and extended battery life in mobile systems. The low-power operation of DDR3L,

1.35V DDR3 SDRAM, is also beneficial in high-density memory systems in power constrained applications such as servers and data

centers. Using Hynix low-power memory modules can help customers reduce power consumption and utility expenditures, improve

reliability and reduce carbon emissions. Hynix plans to offer DDR3 in densities of 1Gb to 4Gb, and is currently in volume production

on 2Gb DDR3. Hynix’s DDR3 modules exploit functions such as ZQ calibration, fly-by topology, dynamic on-die-termination, and

levelization to ensure better signal integrity which guarantees higher performance.

Main

Memory

A crossover to mobile computers from the traditional desktop

has already occurred. Declining prices is the primary driving

factor, especially in light of current global economic conditions.

Mobility and weight are other features that make mobile

computers attractive to consumers, in addition to the computing

power that now rivals desktops

The technology leap from DDR2 to DDR3 doubles system

performance. As DDR3 offers superior performance and power

savings, notebooks are rapidly adopting DDR3 memory.

With rapid transition trend to DDR3, processor makers are also

supporting DDR3 platforms at speeds of up to 1600Mbps.

Hynix estimates DDR3 1333Mbps segment in notebooks will be

around 70% by the second half of 2010.

SODIMM

PC & Server

Memory

General Description

There is a lot of concern about protecting the environment and it is quickly becoming one of the top priorities. Highly virtualized

applications such as data centers, servers and supercomputers, could take advantage of the low power features of the DDR3

SDRAM to enable cooler, power efficient systems.

Hynix is responding to the industry demand for eco-friendly or 'green' products that reduce power consumption, utility expenditures,

improve reliability and reduce carbon emissions. The new Hynix 1.5V 1Gb DDR3 features 25% lower power consumption than

legacy or competing solutions. The 1.35V(DDR3L) product will yield an additional 20% power savings. It will be an attractive solution

for applications requiring compliance to energy star specifications. This product would also be ideal in mobile applications, such as

notebooks, where it markedly extends battery life.

The new design philosophy adopted on the second generation 1Gb DDR3, will also be applied to future high density DRAM

components from Hynix. The new 44nm process along with Hynix’s design optimization and internal signaling innovations, reduces

power consumption and enhances performance. Devices operating at 1.5V and 1.35V(Low Voltage) exhibit similar bandwidth

characteristics. The demand for low power consumption in both mobile system like notebooks and server systems such as

datacenters, is the emerging trend.

Hynix’s strategy is to satisfy customers needs for reduced power consumption and improved performance with technology

advancements such as this 40nm class product.

Transition to Notebook Form Factor Speed Transition in Notebook

Density 4GB SODIMM

Organization 512Mx64

Speed 1600Mbps

Number of Rank 2 Ranks

RDIMM

Density 16GB RDIMM

Organization 2Gx72

Speed 1333Mbps

Number of Rank 4 Ranks

DDR3 SDRAM MODULE (240pin-UDIMM)

1600-11-11-11 HMT351U6BFR8C-PB FBGA (82ball) 2 30mm Now

512Mx64 256Mx8 HMT351U6CFR8C-PB FBGA (78ball) 2 30mm Q1 '11

1333-9-9-9 HMT351U6BFR8C-H9 FBGA (82ball) 2 30mm Now

4GB HMT351U6CFR8C-H9 FBGA (78ball) 2 30mm Q1 '11

1600-11-11-11 HMT351U7CFR8C-H9 FBGA (78ball) 2 30mm Q1 '11

512Mx72 256Mx8 1333-9-9-9 HMT351U7BFR8C-H9 FBGA (82ball) 2 30mm Now

HMT351U7CFR8C-H9 FBGA (78ball) 2 30mm Q1 '11

1600-11-11-11 HMT125U6DFR8C-PB FBGA (78ball) 2 30mm Now

1.5V 128Mx8 1333-9-9-9 HMT125U6TFR8C-H9 FBGA (78ball) 2 30mm Now

256Mx64 HMT125U6DFR8C-H9 FBGA (78ball) 2 30mm Now

2GB 256Mx8 1333-9-9-9 HMT325U6BFR8C-H9 FBGA (82ball) 1 30mm Now

HMT325U6BFR8C-H9 FBGA (82ball) 1 30mm Now

256Mx72 128Mx8 1333-9-9-9 HMT125U7TFR8C-H9 FBGA (78ball) 2 30mm Now

1333-9-9-9 HMT325U7BFR8C-H9 FBGA (82ball) 1 30mm Now

1600-11-11-11 HMT112U6DFR8C-PB FBGA (78ball) 1 30mm Now

1GB 128Mx64 128Mx8 1333-9-9-9 HMT112U6TFR8C-H9 FBGA (78ball) 1 30mm Now

HMT112U6DFR8C-H9 FBGA (78ball) 1 30mm Now

128Mx72 128Mx8 1333-9-9-9 HMT112U7TFR8C-H9 FBGA (78ball) 1 30mm Now

1600-11-11-11 HMT351U7CFR8A-PB FBGA (78ball) 2 30mm Q1 '11

4GB 512Mx72 256Mx8 1333-9-9-9 HMT351U7BFR8A-H9 FBGA (82ball) 2 30mm Now

1.35V HMT351U7CFR8A-H9 FBGA (78ball) 2 30mm Q1 '11

2GB 256Mx72 256Mx8 1333-9-9-9 HMT325U7BFR8A-H9 FBGA (82ball) 1 30mm Now

128Mx8 1333-9-9-9 HMT125U7TFR8A-H9 FBGA (78ball) 2 30mm Now

1GB 128Mx72 128Mx8 1333-9-9-9 HMT112U7TFR8A-H9 FBGA (78ball) 1 30mm Now

VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY

DENSITY ORG.

MODULE

Main Memory

Product Line-up

DDR3 SDRAM MODULE (240pin-RDIMM)

16GB 2Gx72 1Gx4 (DDP) 1333-9-9-9 HMT42GR7BMR4C-H9 FBGA (82ball) 4 30mm Now

1600-11-11-11 HMT31GR7BFR4C-PB FBGA (82ball) 2 30mm Now

512Mx4 HMT31GR7CFR4C-PB FBGA (78ball) 2 30mm Q1 '11

8GB 1Gx72 1333-9-9-9 HMT31GR7BFR4C-H9 FBGA (82ball) 2 30mm Now

HMT31GR7CFR4C-H9 FBGA (78ball) 2 30mm Q1 '11

256Mx8 1333-9-9-9 HMT31GR7BFR8C-H9 FBGA (82ball) 4 30mm Now

HMT31GR7CFR8C-H9 FBGA (78ball) 4 30mm Q1 '11

256Mx8 1600-11-11-11 HMT351R7BFR8C-PB FBGA (82ball) 2 30mm Now

1.5V 1333-9-9-9 HMT351R7BFR8C-H9 FBGA (82ball) 2 30mm Now

4GB 512Mx72 512Mx4 1600-11-11-11 HMT351R7BFR4C-PB FBGA (82ball) 1 30mm Now

1333-9-9-9 HMT351R7BFR4C-H9 FBGA (82ball) 1 30mm Now

256Mx4 1333-9-9-9 HMT151R7TFR4C-H9 FBGA (78ball) 2 30mm Now

256Mx8 1600-11-11-11 HMT325R7BFR8C-PB FBGA (82ball) 1 30mm Now

2GB 256Mx72 1333-9-9-9 HMT325R7BFR8C-H9 FBGA (82ball) 1 30mm Now

256Mx4 1333-9-9-9 HMT125R7TFR4C-H9 FBGA (78ball) 1 30mm Now

128Mx8 1333-9-9-9 HMT125R7TFR8C-H9 FBGA (78ball) 2 30mm Now

1GB 128Mx72 128Mx8 1333-9-9-9 HMT112R7TFR8C-H9 FBGA (78ball) 1 30mm Now

16GB 2Gx72 1Gx4 (DDP) 1333-9-9-9 HMT42GR7BMR4A-H9 FBGA (82ball) 4 30mm Now

1600-11-11-11 HMT31GR7CFR4A-PB FBGA (78ball) 2 30mm Q1 '11

512Mx4 1333-9-9-9 HMT31GR7BFR4A-H9 FBGA (82ball) 2 30mm Now

8GB 1Gx72 HMT31GR7CFR4A-H9 FBGA (78ball) 2 30mm Q1 '11

256Mx8 1333-9-9-9 HMT31GR7BFR8A-H9 FBGA (82ball) 4 30mm Now

HMT31GR7CFR8A-H9 FBGA (78ball) 4 30mm Q1 '11

1.35V 512Mx4 1333-9-9-9 HMT351R7BFR4A-H9 FBGA (82ball) 2 30mm Now

4GB 512Mx72 1333-9-9-9 HMT351R7BFR8A-H9 FBGA (82ball) 2 30mm Now

128Mx8 1066-7-7-7 HMT151R7TFR8A-G7 FBGA (78ball) 4 30mm Now

256Mx4 1333-9-9-9 HMT151R7TFR4A-H9 FBGA (78ball) 2 30mm Now

256Mx8 1333-9-9-9 HMT325R7BFR8A-H9 FBGA (82ball) 1 30mm Now

2GB 256Mx72 256Mx4 1333-9-9-9 HMT125R7TFR4A-H9 FBGA (78ball) 1 30mm Now

128Mx8 1333-9-9-9 HMT125R7TFR8A-H9 FBGA (78ball) 1 30mm Now

1GB 128Mx72 128Mx8 1333-9-9-9 HMT112R7TFR8A-H9 FBGA (78ball) 1 30mm Now

VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY

DENSITY ORG.

MODULE

The information in this product brochure is subject to change. Up to date information on

our products and technologies may be obtained from our website. www.hynix.com

Main Memory

Product Line-up

DDR3 SDRAM MODULE (240pin-VLP RDIMM)

1Gx4 (DDP) 1600-11-11-11 HMT41GV7BMR4C-PB FBGA (82ball) 2 18.75mm Now

8GB 1Gx72 1333-9-9-9 HMT41GV7BMR4C-H9 FBGA (82ball) 2 18.75mm Now

512Mx8 (DDP) 1333-9-9-9 HMT41GV7BMR8C-H9 FBGA (82ball) 4 18.75mm Now

512Mx4 (DDP) 1333-9-9-9 HMT351V7BMR4C-H9 FBGA (78ball) 2 18.75mm Now

4GB 512Mx72 256Mx8 1600-11-11-11 HMT351V7BFR8C-PB FBGA (82ball) 2 18.75mm Now

1.5V 1333-9-9-9 HMT351V7BFR8C-H9 FBGA (82ball) 2 18.75mm Now

256Mx4 1333-9-9-9 HMT125V7TFR4C-H9 FBGA (78ball) 1 18.75mm Now

2GB 256Mx72 128Mx8 1333-9-9-9 HMT125V7TFR8C-H9 FBGA (78ball) 2 18.75mm Now

256Mx8 1600-11-11-11 HMT325V7BFR8C-PB FBGA (82ball) 1 18.75mm Now

1333-9-9-9 HMT325V7BFR8C-H9 FBGA (82ball) 1 18.75mm Now

1GB 128Mx72 128Mx8 1333-9-9-9 HMT112V7TFR8C-H9 FBGA (78ball) 1 18.75mm Now

8GB 1Gx72 1Gx4 (DDP) 1333-9-9-9 HMT41GV7BMR4A-H9 FBGA (82ball) 2 18.75mm Now

512Mx8 (DDP) 1333-9-9-9 HMT41GV7BMR8A-H9 FBGA (82ball) 4 18.75mm Now

4GB 512Mx72 512Mx4 (DDP) 1333-9-9-9 HMT351V7BMR4A-H9 FBGA (78ball) 2 18.75mm Now

1.35V 1333-9-9-9 HMT351V7BFR8A-H9 FBGA (82ball) 2 18.75mm Now

256Mx4 1333-9-9-9 HMT125V7TFR4A-H9 FBGA (78ball) 1 18.75mm Now

2GB 256Mx72 128Mx8 1333-9-9-9 HMT125V7TFR8A-H9 FBGA (78ball) 2 18.75mm Now

1333-9-9-9 HMT325V7BFR8A-H9 FBGA (82ball) 1 18.75mm Now

1GB 128Mx72 128Mx8 1333-9-9-9 HMT112V7TFR8A-H9 FBGA (78ball) 1 18.75mm Now

VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY

DENSITY ORG.

MODULE

DDR3 SDRAM MODULE (204pin-SODIMM)

1600-11-11-11 HMT351S6BFR8C-PB FBGA (82ball) 2 30mm Now

4GB 512Mx64 256Mx8 HMT351S6CFR8C-PB FBGA (78ball) 2 30mm Q1 '11

1333-9-9-9 HMT351S6BFR8C-H9 FBGA (82ball) 2 30mm Now

HMT351S6CFR8C-H9 FBGA (78ball) 2 30mm Q1 '11

128Mx8 1600-11-11-11 HMT125S6DFR8C-H9 FBGA (78ball) 2 30mm Now

1.5V HMT125S6DFR8C-H9 FBGA (78ball) 2 30mm Now

2GB 256Mx64 256Mx8 1600-11-11-11 HMT325S6BFR8C-PB FBGA (82ball) 1 30mm Now

1333-9-9-9 HMT325S6BFR8C-H9 FBGA (82ball) 1 30mm Now

128Mx16 1333-9-9-9 HMT325S6BFR6C-H9 FBGA (96ball) 2 30mm Now

128Mx8 1600-11-11-11 HMT112S6DFR8C-PB FBGA (78ball) 1 30mm Now

1GB 128Mx64 HMT112S6DFR8C-H9 FBGA (78ball) 1 30mm Now

64Mx16 1333-9-9-9 HMT112S6BFR6C-H9 FBGA (96ball) 2 30mm Now

1.35V 4GB 512Mx64 256Mx8 1333-9-9-9 HMT351S6AFR8A-H9 FBGA (82ball) 2 30mm Now

2GB 256Mx64 256Mx8 1333-9-9-9 HMT325S6AFR8A-H9 FBGA (82ball) 1 30mm Now

VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY

DENSITY ORG.

MODULE

DDR3 SDRAM MODULE (240pin-LRDIMM)

1.5V 16GB 2Gx72 1Gx4 (DDP) 1333-9-9-9 HMT42GL7BMR4C-H9 FBGA (82ball) 4 30.35mm Q4 '10

1Gx4 (DDP) 1600-11-11-11 HMT42GL7BMR4C-PB FBGA (82ball) 4 30.35mm Q1 '11

1.35V 16GB 2Gx72 1Gx4 (DDP) 1333-9-9-9 HMT42GL7BMR4A-H9 FBGA (82ball) 4 30.35mm Q4 '10

1Gx4 (DDP) 1600-11-11-11 HMT42GL7BMR4A-PB FBGA (82ball) 4 30.35mm Q1 '11

VDD BASED COM. SPEED PART NUMBER PACKAGE RANK HEIGHT AVAILABILITY

DENSITY ORG.

MODULE

The information in this product brochure is subject to change. Up to date information on

our products and technologies may be obtained from our website. www.hynix.com

Graphics

Memory

General Description

Since the world’s first Graphics DDR SDRAM was introduced in 1999, Hynix has played a leadership role in the Graphics memory

market by offering cost effective and high performance products.

Hynix’s newly introduced 44nm 2Gb GDDR5 offers designers 7Gbps speed (bandwidth of 28GB/sec with 32-bit I/O) required for

high end graphics.

In addition to improved speed and higher density, the power consumption on the 2Gb GDDR5 is significantly reduced since it can

operate on 1.35V power supply. This results in an estimated 20% reduction in power consumption compared to the 1.5V products,

meeting Hynix’s goal of developing eco-friendly products.

The 2Gb GDDR5 will meet the needs of high-end desktop and notebook graphics applications. It will also be suitable in super

computers designed with a General Purpose GPU architecture, where the 2Gb GDDR5 will serve as high bandwidth memory to the

GPU.

Hynix has maintained its leadership in graphics memory with the world’s first 66nm 1Gb GDDR5 in 2007 followed by the 54nm 1Gb

GDDR5 in 2008, and 44nm 2Gb GDDR5 in early 2010.

Hynix also supports GDDR3, DDR3 and DDR2 products for performance and mainstream market. Hynix will provide more value to

customers with higher performance, quality and technology leadership products.

44nm 2Gb GDDR5 Features

Graphics Product Features Comparison

Graphics Applications

Items Features

Op. Frequency Max 7.0Gbps

Power Supply VDD(Q) = 1.5V & 1.35V

I / O x32 / x16

Package 170ball FBGA (12mmx14mm)

Banks / Prefetch 16Banks / 8bit

Interface POD_15

Items DDR2 DDR3 GDDR3 GDDR5

VDD(Q) 1.8V 1.5V 1.8V 1.35V / 1.5V

Speed Max 600MHz Max 1.0GHz Max 1.3GHz Max 7.0Gbps

Burst length 4 / 8 4 / 8 4 / 8 8 only

Package 84ball FBGA 96ball FBGA 136ball FBGA 170ball FBGA

Density 512Mb / 1Gb 1Gb / 2Gb 512Mb / 1Gb 1Gb / 2Gb

I / O x16 x16 x32 x32 / x16

Banks 4(512Mb) / 8(1Gb) 8 8 16

BST No No Yes Yes

(Boundary Scan Test)

DDR2 SDRAM

DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

500MHz (2.0ns) H5PS1G63EFR-20L FBGA (84ball) 8Bank, 1.8V / 1.8V EOL : Oct. '10

1Gb 64Mx16 400MHz (2.5ns) H5PS1G63EFR-25C FBGA (84ball) 8Bank, 1.8V / 1.8V EOL : Oct. '10

400MHz (2.5ns) HY5PS1G1631CFR-25C FBGA (84ball) 8Bank, 1.8V / 1.8V EOL : Oct. '10

600MHz (1.6ns) H5PS5162FFR-16C FBGA (84ball) 4Bank, 2.0V / 2.0V EOL : Oct. '10

500MHz (2.0ns) H5PS5162FFR-20C FBGA (84ball) 4Bank, 2.0V / 2.0V EOL : Oct. '10

500MHz (2.0ns) H5PS5162FFR-20L FBGA (84ball) 4Bank, 1.8V / 1.8V EOL : Oct. '10

400MHz (2.5ns) H5PS5162FFR-25C FBGA (84ball) 4Bank, 1.8V / 1.8V EOL : Oct. '10

512Mb 32Mx16 500MHz (2.0ns) HY5PS121621CFP-2 FBGA (84ball) 4Bank, 2.0V / 2.0V EOL : Oct. '10

450MHz (2.2ns) HY5PS121621CFP-22 FBGA (84ball) 4Bank, 2.0V / 2.0V EOL : Oct. '10

400MHz (2.5ns) HY5PS121621CFP-25 FBGA (84ball) 4Bank, 1.8V / 1.8V EOL : Oct. '10

350MHz (2.8ns) HY5PS121621CFP-28 FBGA (84ball) 4Bank, 1.8V / 1.8V EOL : Oct. '10

300MHz (3.3ns) HY5PS121621CFP-33 FBGA (84ball) 4Bank, 1.8V / 1.8V EOL : Oct. '10

DDR3 SDRAM

DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

1,000MHz (1.0ns) H5TQ2G63BFR-N0C FBGA (96ball) 8Bank, 1.5V / 1.5V Now

2Gb 128Mx16 900MHz (1.1ns) H5TQ2G63BFR-11C FBGA (96ball) 8Bank, 1.5V / 1.5V Now

800MHz (1.2ns) H5TQ2G63BFR-12C FBGA (96ball) 8Bank, 1.5V / 1.5V Now

1,000MHz (1.0ns) H5TQ1G63DFR-N0C FBGA (96ball) 8Bank, 1.5V / 1.5V Q4 '10

900MHz (1.1ns) H5TQ1G63DFR-11C FBGA (96ball) 8Bank, 1.5V / 1.5V Q4 '10

1Gb 64Mx16 800MHz (1.2ns) H5TQ1G63DFR-12C FBGA (96ball) 8Bank, 1.5V / 1.5V Q4 '10

800MHz (1.2ns) H5TQ1G63BFR-12C FBGA (96ball) 8Bank, 1.5V / 1.5V Now

700MHz (1.4ns) H5TQ1G63BFR-14C FBGA (96ball) 8Bank, 1.5V / 1.5V Now

GDDR5 SDRAM

DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

6.0Gbps H5GQ2H24MFR-R0C FBGA (170ball) 16Bank, 1.6V / 1.6V Now

2Gb 64Mx32 5.0Gbps 16Bank, 1.5V / 1.5V

3.6Gbps 16Bank, 1.35V / 1.35V

4.0Gbps H5GQ2H24MFR-T0C FBGA (170ball) 16Bank, 1.5V / 1.5V Now

6.0Gbps H5GQ1H24AFR-R0C FBGA (170ball) 16Bank, TBD Now

5.5Gbps H5GQ1H24AFR-T3C FBGA (170ball) 16Bank, 1.5V / 1.5V Now

1Gb 32Mx32 5.0Gbps 16Bank, 1.5V / 1.5V

3.2Gbps 16Bank, 1.35V / 1.35V

4.5Gbps H5GQ1H24AFR-T1C FBGA (170ball) 16Bank, 1.5V / 1.5V Now

4.0Gbps H5GQ1H24AFR-T0C FBGA (170ball) 16Bank, 1.5V / 1.5V Now

GDDR3 SDRAM

DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

1,300MHz (0.77ns) H5RS1H23MFR-N3C FBGA (136ball) 8banks, 1.9V / 1.9V Now

1,200MHz (0.8ns) H5RS1H23MFR-N2C FBGA (136ball) 8banks, 1.9V / 1.9V Now

1Gb 32Mx32 1,000MHz (1.0ns) H5RS1H23MFR-N0C FBGA (136ball) 8banks, 1.8V / 1.8V Now

900MHz (1.1ns) H5RS1H23MFR-11C FBGA (136ball) 8banks, 1.8V / 1.8V Now

700MHz (1.4ns) H5RS1H23MFR-14C FBGA (136ball) 8banks, 1.8V / 1.8V Now

1,300MHz (0.77ns) H5RS5223DFR-N3C FBGA (136ball) 8Bank, 2.05V / 2.05V Now

1,200MHz (0.8ns) H5RS5223DFR-N2C FBGA (136ball) 8Bank, 2.05V / 2.05V Now

1,000MHz (1.0ns) H5RS5223DFR-N0C FBGA (136ball) 8Bank, 2.05V / 2.05V Now

900MHz (1.1ns) H5RS5223DFR-11C FBGA (136ball) 8Bank, 1.8V / 1.8V Now

700MHz (1.4ns) H5RS5223DFR-14C FBGA (136ball) 8Bank, 1.8V / 1.8V Now

500MHz (2.0ns) H5RS5223DFR-20C FBGA (136ball) 8Bank, 1.8V / 1.8V Now

512Mb 16Mx32 1,300MHz (0.77ns) H5RS5223CFR-N3C FBGA (136ball) 8Bank, 2.05V / 2.05V EOL : Oct. '10

1,200MHz (0.8ns) H5RS5223CFR-N2C FBGA (136ball) 8Bank, 2.05V / 2.05V EOL : Oct. '10

1,000MHz (1.0ns) H5RS5223CFR-N0C FBGA (136ball) 8Bank, 2.05V / 2.05V EOL : Oct. '10

900MHz (1.1ns) H5RS5223CFR-11C FBGA (136ball) 8Bank, 1.8V / 1.8V EOL : Oct. '10

700MHz (1.4ns) H5RS5223CFR-14C FBGA (136ball) 8Bank, 1.8V / 1.8V EOL : Oct. '10

500MHz (2.0ns) H5RS5223CFR-20C FBGA (136ball) 8Bank, 1.8V / 1.8V EOL : Oct. '10

700MHz (1.4ns) H5RS5223CFR-14L FBGA (136ball) 8Bank, 1.5V / 1.5V EOL : Oct. '10

550MHz (1.8ns) H5RS5223CFR-18C FBGA (136ball) 8Bank, 1.5V / 1.5V EOL : Oct. '10

Graphics Memory

Product Line-up

H5GQ2H24MFR-T2C FBGA (170ball) Now

FBGA (170ball) Now

H5GQ1H24AFR-T2L

The information in this product brochure is subject to change. Up to date information on

our products and technologies may be obtained from our website. www.hynix.com

Consumer

Memory

General Description

We now live in the Digital Era. Digital televisions, DVD and Set-Top Box give us rich entertainment, while car navigation systems

provide comfort and convenience. All of these digital consumer appliances need semiconductor memory for performance

improvement, power savings and size reduction. Hynix has full line-up of DRAM (Dynamic RAM) to meet the needs of a wide range

of consumer applications. Hynix offers a family of SDRAM (Synchronous DRAM) in 128Mb~256Mb densities, packaged in TSOP-II

and FBGA offered at industrial temperature range of -40 to 85 and featuring very low power consumption. DDR, DDR2 and

DDR3 SDRAMs (Double Data Rate 3 SDRAMs) are available for high-end consumer applications requiring higher data transfer

rates. In many applications, such as Digital Television and Set-Top-Box, SDR SDRAM has been replaced by DDR, DDR2 and DDR3

SDRAM technologies.

Sometimes, the most important things are not be visible. Although hidden from view, Hynix Consumer memories have been used in

a variety of applications offered by a number of companies to realize a multitude of miracles.

Consumer DRAM Readiness

Consumer DRAM Usage Map

x16 HY57V281620FTP 5 / 6 / 7 / H Normal / Low 0~70 / -40~85 TSOP 3.3V Now

128Mb x16 HY5V26FFP 5 / 6 / 7 / H Normal / Low 0~70 / -40~85 FBGA 3.3V Now

x16 H57V1262GTR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 TSOP 3.3V Now

x16 H57V1262GFR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 FBGA 3.3V Now

x8 HY57V56820FTP 6 / H Normal / Low 0~70 / -40~85 TSOP 3.3V Now

x16 HY57V561620FTP 6 / H Normal / Low 0~70 / -40~85 TSOP 3.3V Now

x16 HY5V56FFP 6 / H Normal / Low 0~70 / -40~85 FBGA 3.3V Now

256Mb x32 HY5V52AFP 6 / H Normal / Low 0~70 / -40~85 FBGA 3.3V Now

x8 H57V2582GTR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 TSOP 3.3V Now

x16 H57V2562GTR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 TSOP 3.3V Now

x16 H57V2562GFR 50 / 60 / 70 / 75 Normal / Low 0~70 / -40~85 FBGA 3.3V Now

x32 H57V2622GMR 60 / 70 / 75 Normal / Low 0~70 / -40~85 FBGA 3.3V Now

SDR SDRAM

DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE

AVAILABILITY

256Mb x16 H5PS2562GFR S6 / S5 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Q4 '10

x8 H5PS5182GFR E3 / C4 / Y4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now

512Mb x16 H5PS5162FFR E3 / C4 / Y4 / Y5 / S6 / S5 / G7 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now

H5PS5162GFR E3 / C4 / Y4 / Y5 / S6 / S5 / G7 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now

x8 HY5PS1G831CFP E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now

x8 H5PS1G83EFR E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now

1Gb x16 HY5PS1G1631CFP E3 / C4 / Y5 / S6 / S5 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now

x16 H5PS1G63EFR E3 / C4 / Y5 / S6 / S5 / G7 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now

x32 H5PS1GC2FMR E3 / C4 / Y5 Normal / Low 0~95 / -40~95 Note FBGA 1.8V Now

DDR2 SDRAM

DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE

AVAILABILITY

x8 H5TQ1G83BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now

1Gb H5TQ1G83DFR S6 / G7 / H9 / PA / PB / RD Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now

x16 H5TQ1G63BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now

H5TQ1G63DFR S6 / G7 / H9 / PA / PB / RD Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now

x8 H5TQ2G83AFR S5 / S6 / G7 / G8 / H9 Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now

2Gb x8 H5TQ2G83BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now

x16 H5TQ2G63BFR S5 / S6 / G7 / G8 / H9 / PB Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now

x32 H5TQ2GC3DMR S5 / S6 / G7 / G8 / H9 Normal / Low 0~95 / -40~95 Note FBGA 1.5V Now

DDR3 SDRAM

DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE

AVAILABILITY

128Mb x16 HY5DU281622FTP 4 / 5 / D43 / D4 / J / H Normal / Low 0~70 / -40~85 TSOP 2.5V Now

x16 H5DU1262GTR FA / FB / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 TSOP 2.5V Now

x8 H5DU2582GTR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 TSOP 2.5V Now

256Mb x16 H5DU2562GFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 FBGA 2.5V Now

x8 H5DU2582GTR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 TSOP 2.5V Now

x16 H5DU2562GFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 FBGA 2.5V Now

x8 H5DU5182ETR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 TSOP 2.5V Now

512Mb x8 H5DU5182EFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 FBGA 2.5V Now

x16 H5DU5162ETR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 TSOP 2.5V Now

x16 H5DU5162EFR FA / E3 / E4 / J3 / K2 / K3 Normal / Low 0~70 / -40~85 FBGA 2.5V Now

DDR SDRAM

DENSITY ORG. PART NUMBER SPEED POWER OPERATION TEMP. PACKAGE VOLTAGE

AVAILABILITY

Note : At tOPER 85~95 , Double refresh rate is required.

Consumer Memory

Product Line-up

The information in this product brochure is subject to change. Up to date information on

our products and technologies may be obtained from our website. www.hynix.com

Mobile

Memory

General Description

Hynix Mobile Memory technology unleashes the best mobile experience on the go. As mobile devices get smaller, sleeker, and

lighter than ever, consumers will be able to choose from a wide range of mobile devices to keep them connected, entertained,

informed, and productive. As consumer life styles become more mobile, there is ever increasing demand for connectivity. Mobile

devices will require high performance memories, with very low power consumption for extended battery life. Devices that use Hynix

Mobile Memory enables everything you love on-the-go. Hynix Mobile Memory products offered in small footprint packages have

superior power saving features useful in all handheld devices such as cellular phones, PDAs, MP3 players, etc. Hynix Mobile

Memories are ideal for portable applications which require very low power consumption. Hynix’s Mobile Business Group offers a

broad variety of products enabling our customers to deliver next-generation devices in time to market

Mobile DRAM

Broad Product Line: LPSDR / LPDDR, x16 / x32 organizations, 256Mb~2Gb densities

DDR2, x32 organization, 2Gb density

Diverse Packaging Options: Discrete, KGD (Known Good Die), MCP (Multi Chip Package), PoP (Package on Package)

Small Form Factor Packages: For use in the most space-constrained handheld applications

Low Power Features: Programmable Drive strength, Partial Array Self Refresh, Temperature Compensated Self Refresh

Major Applications: Mobile Phone, PDA, MP3 Player, Digital Still Camera, MID (Mobile Internet Device), PND (Portable Navigation

Device), Personal Media Player (PMP), Handheld Game Console, e-book

LPDDR2 will be the next generation mainstream. Hynix set the standard for LPDDR2 technology along with LPDDR

MCPs in Mobile Application MCP Line-up

Bandwidth Comparison Transition to LPDDR2

MCP

Small Form Factor package saves space in Handheld Devices

High Capacity Data Storage, High Speed, with Low Power Consumption

In-house manufacturing provides cost efficient solutions in a timely manner

Major Application - Mobile Phone, Smartphone, PDA Phone, Digital Still Camera, MID (Mobile Internet Device), Wireless

LAN Card, Handheld Game Console, Netbook

LPSDR

DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

64M x 16 166MHz H55S1G62MFP-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

133MHz H55S1G62MFP-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

2Gb 32M x 32 166MHz H55S1G22MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz H55S1G22MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

32M x 32 166MHz H55S1G32MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

(reduced page size) 133MHz H55S1G32MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

166MHz H55S1G62MFP-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

64M x 16 133MHz H55S1G62MFP-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

166MHz H55S1G62AFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

133MHz H55S1G62AFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

166MHz H55S1G22MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

1Gb 32M x 32 133MHz H55S1G22MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

166MHz H55S1G22AFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz H55S1G22AFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

166MHz H55S1G32MFP-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

32M x 32 133MHz H55S1G32MFP-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

(reduced page size) 166MHz H55S1G32AFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz H55S1G32AFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

166MHz H55S5162DFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

32M x 16 133MHz H55S5162DFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

166MHz H55S5162EFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

512Mb 133MHz H55S5162EFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

166MHz H55S5122DFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

16M x 32 133MHz H55S5122DFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

166MHz H55S5122EFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz H55S5122EFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

16M x 16 166MHz H55S2562JFR-60M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

256Mb 133MHz H55S2562JFR-75M FBGA (54ball) 4Bank, 1.8V / 1.8V Now

8M x 32 166MHz H55S2622JFR-60M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

133MHz H55S2622JFR-75M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

LPDDR2

DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

2Gb 64M x 32 DDR2-800 H9TKNNN2GDMPLR-NDM FBGA (168ball) 8Bank, 1.8V / 1.2V / 1.2V Now

DDR2-667 H9TKNNN2GDMPLR-NYM FBGA (168ball) 8Bank, 1.8V / 1.2V / 1.2V Now

LPDDR

DENSITY ORG. SPEED PART NUMBER PACKAGE FEATURE AVAILABILITY

64M x 16 DDR400 H5MS2G62MFR-EBM FBGA (60ball) 4Bank, 1.8V / 1.8V Now

DDR333 H5MS2G62MFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

2Gb 32M x 32 DDR400 H5MS2G22MFR-EBM FBGA (90ball) 4Bank, 1.8V / 1.8V Now

DDR333 H5MS2G22MFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

32M x 32 DDR400 H5MS2G32MFR-EBM FBGA (90ball) 4Bank, 1.8V / 1.8V Now

(reduced page size) DDR333 H5MS2G32MFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

DDR400 H5MS1G62MFP-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

DDR333 H5MS1G62MFP-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

64M x 16 DDR266 H5MS1G62MFP-K3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

DDR400 H5MS1G62AFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

DDR333 H5MS1G62AFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

DDR400 H5MS1G22MFP-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

DDR333 H5MS1G22MFP-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

1Gb 32M x 32 DDR266 H5MS1G22MFP-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

DDR400 H5MS1G22AFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

DDR333 H5MS1G22AFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

DDR400 H5MS1G32MFP-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

32M x 32 DDR333 H5MS1G32MFP-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

DDR266 H5MS1G32MFP-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

(reduced page size) DDR400 H5MS1G32AFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

DDR333 H5MS1G32AFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

DDR400 H5MS5162DFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

DDR333 H5MS5162DFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

32M x 16 DDR266 H5MS5162DFR-K3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

DDR400 H5MS5162EFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

512Mb DDR333 H5MS5162EFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

DDR400 H5MS5122DFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

DDR333 H5MS5122DFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

16M x 32 DDR266 H5MS5122DFR-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

DDR400 H5MS5122EFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

DDR333 H5MS5122EFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

DDR400 H5MS2562JFR-E3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

16M x 16 DDR333 H5MS2562JFR-J3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

256Mb DDR266 H5MS2562JFR-K3M FBGA (60ball) 4Bank, 1.8V / 1.8V Now

DDR400 H5MS2622JFR-E3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

8M x 32 DDR333 H5MS2622JFR-J3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

DDR266 H5MS2622JFR-K3M FBGA (90ball) 4Bank, 1.8V / 1.8V Now

* All SDRAM is Available For Lead Free or Lead & Halogen Free

Mobile Memory

Product Line-up

The information in this product brochure is subject to change. Up to date information on

our products and technologies may be obtained from our website. www.hynix.com

Items 41nm 32G MLC 32nm 32G MLC 26nm 64G MLC

Voltage 3.3V 3.3V 3.3V

Organization x8 x8 x8

Page & Block size (P/B) 4KB+224B / 512KB 8KB+448B / 2MB 8KB+448B / 2MB

tRC(min) / tWC (min) 25ns 25ns 20ns

tR (max) 60us 200us 200us

Program time (typ.) 1000us 1600us 1700us

Erase time (typ.) 3ms 2.5ms 3.5ms

Operating current MONO / DDP 30mA(typ.) ~ 50mA(max) 30mA(typ.) ~ 50mA(max) 30mA(typ.) ~ 50mA(max)

QDP / DSP 30mA(typ.) ~ 50mA(max) 30mA(typ.) ~ 60mA(max) 30mA(typ.) ~ 60mA(max)

Copyback O with Data out O with Data out O with Data out

Function Cache Program O O O

Cache Read O O O

2 Plane Op. Write, Read & Erase Write, Read & Erase Write, Read & Erase

Enhanced Data Out O O O

Special / Function OTP O O O

Unique ID O O O

Endurance / Package

E/W Cycles / Retention 5K / 10 years 3K / 10 years TBD

NOP 1 1 1

Package VLGA VLGA / TSOP VLGA

NAND Flash

Memory

General Description

Hynix provides a broad range of NAND Flash products density from 128Mb to 256Gb with various types of packaging (TSOP, VLGA

and FBGA). Due to the proliferation of digital content, NAND Flash memory products are used in a wide variety of applications such

as MP3, PMP, Digital camera, Camcorder, Memory card, USB flash drive and other consumer electronics such as game console,

Navigation. Currently, Hynix NAND Flash Memory is being widely adopted in the mobile handset applications and we are also

developing PC storage solutions based on the NAND Flash chips. To meet the growing demand for high capacity and improved

performance in mobile applications, Hynix is offering HiFFS (Flash File System) software with eHiFFS system that enhances NAND

chip performance and reliability.

NAND Flash Key Features

NAND Flash Applications Hynix NAND Flash

Software Support

Hynix SSD & e-NAND

SSD (Solid State Drive)

SSD is one of the fastest growing NAND applications in the world.

Because of its strengths - Speed, Performance, Reliability, and

Power Consumption - many computing devices such as MID, Net

Book, Notebook, Servers, etc have replaced conventional hard

drives with SSD. Hynix offers SSM (Solid State Module) and SSD for

mobile and personal computing devices.

Items Features

Bus Interface SATA 3.0Gbps

Capacities 128GB, 256GB, 512GB

Form Factor Standard 2.5

Dimension 69.9 x 100 x 7mm

Sustained Performance - 128KB, MAX Read 260MB/s / Write 260MB/s

Random Performance - 4KB, MAX Read 30K IOPS / Write 10K IOPS

Power Consumption Active : 2.0W / Stand-by : 240mW

Temperature Range 0’c to 70’c for Operating / -55’c to 95’c for Storage

MTBF 1,000,000 Hrs

BER 1 error in 10

bits transferred

HiFFS Software

HiFFS is a flash file system solution for mobile applications. HiFFS is the essential system software for electronic devices which has

Flash memory storage such as mobile phones, PDAs, MP3 players, PMPs, digital TVs, and digital camcorders.

Features

Flash memory file system solution for mobile embedded system

Higher performance and reliability

Fully compatible with FAT 12 / 16 / 32 file system standards

Journaling error recovery mechanism

Support various NAND Flash memory types such as small block,

large block, MLC and SLC and TLC.

Efficient bad block management and wear-leveling

Support UMS(USB Mass Storage) and external flash memory cards

Higher read / write performance

Fast booting

Support various operating systems such as WinCE, Linux,

Non-OS, Windows Mobile

SSD Key Features

e-NAND

Combination of NAND Flash and the Flash Controller with MMC interface, in a single package

Simple read / write memory using standard MMC 4.3 / 4.4 protocol interface.

No additional firmware for NAND management required

Controller includes NAND software such as FTL, ECC, FAT-16/32

HY27US08281A 90nm 128Mb 16KB Mono 3.3V / x8 TSOP / USOP Now

HY27US08561A 90nm 256Mb 16KB Mono 3.3V / x8 TSOP / USOP / FBGA Now

HY27US08121B 70nm 512Mb 16KB Mono 3.3V / x8 TSOP / USOP / FBGA Now

H27U518S2C 57nm 512Mb 16KB Mono 3.3V / x8 TSOP Now

HY27US081G1M 70nm 1Gb 16KB Mono 3.3V / x8 USOP Now

HY27US081G1A 57nm 1Gb 16KB Mono 3.3V / x8 TSOP Now

HY27UF081G2A 70nm 1Gb 128KB Mono 3.3V / x8 TSOP / USOP / FBGA Now

HY27US081G2A 70nm 1Gb 128KB Mono 1.8V / x8 FBGA Now

H27U1G8F2B 48nm 1Gb 128KB Mono 3.3V / x8 TSOP / FBGA Now

H27U1G8F2B 48nm 1Gb 128KB Mono 1.8V / x8 FBGA Now

HY27UF082G2A 70nm 2Gb 128KB Mono 3.3V / x8 TSOP / LGA Now

HY27UF082G2B 57nm 2Gb 128KB Mono 3.3V / x8 TSOP / FBGA Now

HY27UF084G2B 57nm 4Gb 128KB Mono 3.3V / x8 TSOP Now

H27U4G8F2D 41nm 4Gb 128KB Mono 3.3V / x8 TSOP Now

HY27UG088G5(D)B 57nm 8Gb 128KB DDP 3.3V / x8 TSOP / LGA Now 2CE / Dual CH.

HY27UH08AG5B 57nm 16Gb 128KB QDP 3.3V / x8 TSOP Now 2CE

NAND Flash SLC COMPONENT

PRODUCT TECH. DENSITY BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK

H27UAG8M2M 41nm 16Gb 768KB (4KB page) SDP 3.3V / x8 VLGA Now

H27UBG8M2A 32nm 32Gb 1MB (4KB page) SDP 3.3V / x8 VLGA Now

H27UCG8N5A 32nm 64Gb 1MB (4KB page) DDP 3.3V / x8 VLGA Now

PRODUCT TECH. DENSITY BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK

H27U8G8T2B 48nm 8Gb 512KB Mono 3.3V / x8 TSOP Now

H27UAG8T2BTR 32nm 16Gb 2MB (8KB Page) SDP 3.3V / x8 TSOP Now

H27UAG8T2A 41nm 16Gb 512KB (4KB Page) Mono 3.3V / x8 TSOP Now

H27UBG8U5A 41nm 32Gb 512KB (4KB Page) DDP 3.3V / x8 TSOP Now

H27UBG8T2M 41nm 32Gb 512KB (4KB Page) Mono 3.3V / x8 VLGA Now

H27UBG8T2A 32nm 32Gb 2MB (8KB Page) SDP 3.3V / x8 TSOP / VLGA Now

H27UCG8VFA 41nm 64Gb 512KB (4KB Page) QDP 3.3V / x8 TSOP Now

H27UCG8UDM 41nm 64Gb 512KB (4KB Page) DDP 3.3V / x8 VLGA Now Dual CH.

H27UCG8U5(D)A 32nm 64Gb 2MB (8KB Page) DDP 3.3V / x8 TSOP / VLGA Now Dual CH. LGA

H27UCG8T2M 26nm 64Gb 2MB (8KB Page) SDP 3.3V / x8 VLGA Now

H27UDG8VEM 41nm 128Gb 512KB (4KB Page) QDP 3.3V / x8 VLGA Now 4CE, Dual CH.

H27UDG8V5(E)A 32nm 128Gb 2MB (8KB Page) QDP 3.3V / x8 TSOP / VLGA Now 4CE, Dual CH.

H27UEG8YEA 32nm 256Gb 2MB (8KB Page) ODP 3.3V / x8 VLGA Now 4CE, Dual CH.

NAND Flash MLC COMPONENT

PRODUCT TECH. DENSITY BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK

H24U1GTM3ARH 1GB 48nm 8Gb 1 3.3V / x4 Class-4 Now

H24U2GTM1BRH 2GB 41nm 16Gb 1 3.3V / x4 Class-4 Now

H24U4GUM1ARH 4GB 41nm 16Gb 2 3.3V / x4 Class-6 Now

H24U8GVM1MRH 8GB 41nm 16Gb 4 3.3V / x4 Class-6 Now

H24UAGYM1MRH 16GB 41nm 16Gb 8 3.3V / x4 Class-6 Now

H24U2GTM1DRH 2GB 32nm 16Gb 1 3.3V / x4 Class-6 Oct’ 10

uSD COMPONENT

PRODUCT DENSITY VCC/ORG VERSION AVAILABILITY REMARK

TECH. DENSITY STACK

BASE COMPONENT

NAND Flash

Product Line-up

NAND Flash TLC COMPONENT

H2DQDG8VD1MYR 32nm 128Gb 256KB 4 3.3V / x8 VLGA Now VccQ=1.8V

H2DUDG8VD1MYR 32nm 128Gb 256KB 4 3.3V / x8 VLGA Now VccQ=3.3V

H2DQEG8VD1MYR 32nm 256Gb 256KB 8 3.3V / x8 VLGA Now VccQ=1.8V

H2DUEG8VD1MYR 32nm 256Gb 256KB 8 3.3V / x8 VLGA Now VccQ=3.3V

PRODUCT TECH. DENSITY BLOCK SIZE STACK VCC/ORG PACKAGE AVAILABILITY REMARK

E2NAND2.0

H26M11001BAR 1GB 48nm 8Gb 1 3.3V / x8 / x4 MMC4.3 Now

H26M21001CAR 2GB 41nm 16Gb 1 3.3V / x8 / x4 MMC4.3 Now

H26M32001CAR 4GB 41nm 16Gb 2 3.3V / x8 / x4 MMC4.3 Now

H26M32001DAR 4GB 32nm 32Gb 1 3.3V / x8 / x4 MMC4.4 Now

H26M42001DAR 8GB 41nm 16Gb 2 3.3V / x8 / x4 MMC4.3 Now

H26M42001EFR 8GB 32nm 32Gb 2 3.3V / x8 / x4 MMC4.4 Now

H26M54001AJR 16GB 41nm 32Gb 4 3.3V / x8 / x4 MMC4.3 Now

H26M54001BKR 16GB 32nm 32Gb 4 3.3V / x8 / x4 MMC4.4 Now

H26M68001MJR 32GB 41nm 32Gb 8 3.3V / x8 / x4 MMC4.3 Now

H26M68001ANR 32GB 32nm 32Gb 8 3.3V / x8 / x4 MMC4.4 Now

e-NAND COMPONENT

PRODUCT DENSITY VCC/ORG VERSION AVAILABILITY REMARK

TECH. DENSITY STACK

BASE COMPONENT

The information in this product brochure is subject to change. Up to date information on

our products and technologies may be obtained from our website. www.hynix.com

CIS

CMOS Image Sensor

General Description

Cameras are now embedded in every consumer application. From cell phones

to Laptops, taking pictures or streaming self video images to friends are part of

everyday life. Through Hynix CIS, these images can be realized with improved

clarity and more lively ways. Delivering an important moment of one’s life is a

pleasure one can never part with.

The year 2010 will be a milestone for Hynix CIS product line as it gears up

toward being the market leader. Hynix is enhancing its technical excellence in

accelerating technology development to provide advanced quality products and

meet the next level of customer needs

CMOS Image Sensor

CMOS image sensor is a device that converts an optical image to an electrical signal using a CMOS technology. CMOS technology

enables integration of image sensing and digital signal processing on the same chip, resulting in faster, smaller, less expensive,

and lower power image sensing devices.

CMOS image sensor market has a high growth potential, with demand expected to rise by 10 percent annually through 2012.

Its main applications are camera phones, digital still cameras and video conferencing systems, but the market for CMOS image

sensor is rapidly diversifying into applications such as surveillance systems, automotive cameras, and medical equipment.

Camera Attachment Ratio

of Mobile Phones

Applications

Camera Phone

Dual-camera products

Web cams

Other mobile gadgets

1.3M 2M 3MVGA

Hynix CMOS Image Sensor

Technology Migration

Camera Phone Resolution Trend

(Main Camera)

Pixel Size 2.25um 2.25um

Array Format (Active) 640H 480V

Optical Format 1/10-inch

Imaging Area 1.44mm 1.08mm

Color Filter Array RGB Bayer color filters

Scan Mode Progressive

Frame Rate 30-fps @ 24MHz

Shutter Electronic rolling Shutter (ERS)

Digital I/O: 1.7V 3.0V

Supply Voltage Digital Core: 1.7V 1.9V

Analog & Pixel: 2.6V 3.0V

Window size Programmable (including VGA, QVGA, CIF, QCIF)

Flash Support Xenon and LED

Sensitivity 1280mV / LuxSec

SNR 39dB

Dynamic Range 60dB

ADC On-chip, 10-bit

Data Rate 12 megapixels per second

(master clock, 24MHz)

Auto Exposure, Auto White Balance,

Black Level Calibration, Dead pixel Correction,

Windowing, Sub-Sampling,

Features Image Flip, Anti-Flicker, Noise Reduction,

Edge Enhancement, Brightness, Color Saturation,

Gamma Correction, Color Correction,

Lens Shading Correction

Packaging ShellUT CSP

Operating Temp. -20 to 60

Range

VGA (YACBA21S)

SNR 38dB

Dynamic Range 60dB

ADC On-chip, 10-bit

Auto Exposure, Auto White Balance,

Black Level Calibration, Dead pixel Correction,

Windowing, Sub-Sampling, Image Scaling,

Features Image Flip, Anti-Flicker, Noise Reduction,

Edge Enhancement, Brightness, Color Saturation,

Gamma Correction, Color Correction,

Lens Shading Correction

Packaging Bare die (COB) , Recon. Wafer, NeoPAC CSP

Operating Temp. -20 to 60

Range

1.3M (YACC6A1S)

Pixel Size 1.75um 1.75um

Optical Format 1/5-inch

Array Format (Active) 1600H 1200V

Imaging Area 2.80mm 2.10mm

Color Filter Array RGB Bayer color filters

Scan Mode Progressive

Frame Rate Max 15-fps @ full resolution

Shutter Electronic rolling Shutter (ERS)

Digital I/O: 1.7V 3.0V

Supply Voltage Digital Core: 1.7V 1.9V

Analog & Pixel: 2.6V 3.0V

Window size Programmable (including UXGA, SVGA, QSVGA)

Flash Support Xenon and LED

Sensitivity 700mV / lux.sec

SNR 38dB

Dynamic Range 60dB

ADC On-chip, 10-bit

Data Rate 36 megapixels per second

(Internal PLL clock = 72MHz)

Auto Exposure, Auto White Balance,

Black Level Calibration, Dead pixel Correction,

Edge Data for Auto Focus,

Motion Data for Anti-shaking, Windowing,

Features Sub-Sampling, Image Scaling, Image Flip,

Anti-Flicker, Noise Reduction, Strobe Control,

Edge Enhancement, Brightness , Color Saturation,

Gamma Correction, Color Correction,

Lens Shading Correction

Packaging Bare die (COB) , Recon. Wafer, NeoPAC CSP

Operating Temp. -20 to 60

Range

2M (YACD5B1S / YACD511S)

Pixel Size 1.75um 1.75um

Optical Format 1/4-inch

Array Format (Active) 2048H 1356V

Imaging Area 3.640mm 2.744mm

Color Filter Array RGB Bayer color filters

Scan Mode Progressive

Frame Rate 15-fps @ QXGA, 30-fps @ XGA

Shutter Electronic rolling Shutter (ERS)

Digital I/O: 1.7V 3.0V

Supply Voltage Digital Core: 1.7V 1.9V

Analog & Pixel: 2.6V 3.0V

Window size Programmable

Sensitivity 700mV / lux-sec @ 550nm (est.)

SNR 32dB (est.)

Dynamic Range 60dB

ADC On-chip, 10-bit

Auto Exposure, Auto white balance,

Black level calibration, Dead pixel Correction,

Auto Focus Control, Anti-Shaking, Windowing,

Sub-Sampling, Image Scaling, Image Flip,

Features Anti-flicker, Noise Reduction, Strobe Control,

Edge Enhancement , Brightness, Color Saturation

Gamma Correction, Color Correction

Lens Shading Correction,

MCU Embeded,

JPEG Encoder with thumbnail support

Packaging Bare die (COB) , Recon. Wafer, NeoPAC CSP

Operating Temp. Range -20 to 60

3M (YACE4A1S)

Pixel Size 1.75um

Optical Format 1/6-inch

Array Format (Active) 1280H 1024V

Imaging Area 2.296mm 1.848mm

Color Filter Array RGB Bayer color filters

Scan Mode Progressive

Frame Rate 20fps @ SXGA, 30fps @ 720P, 40fps @ VGA

Shutter Electronic rolling Shutter (ERS)

Digital I/O: 1.7V 3.0V

Supply Voltage Digital Core: 1.7V 1.9V

Analog & Pixel: 2.6V 3.0V

Window size Programmable

Flash Support Xenon and LED

Sensitivity 700mV / LuxSec

CMOS Image Sensor

Product Line-up and Key Features

*. YACE4B1S is available with smaller size but JPEG is not embedded.

HEADQUARTERS & FACTORY

HYNIX SEMICONDUCTOR INC. (H.S.I)

HEADQUARTERS & FACTORY

San 136-1, Ami-Ri, Bubal-Eub, Icheon-si,

Kyoungki-Do, 467-701, Korea

Tel: 82-31-630-4114 Fax: 82-31-630-4103

MARKETING & SALES DIVISION

891 Daechi-dong, Kangnam-gu, Seoul,

135-738, Korea

Tel: 82-2-3459-5114 Fax: 82-2-3459-5987/8

CHEONGJU FACTORY

1, Hyangjeong-dong, Hungduk-gu, Cheongju-si,

Chungbuk, 361-725, Korea

Tel: 82-43-270-3114 Fax: 82-43-270-2145

AMERICA

HYNIX SEMICONDUCTOR AMERICA INC. (H.S.A)

3101 North First Street, San Jose, CA 95134, U.S.A

Tel: 1-408-232-8000 Fax: 1-408-232-8103

ATLANTA OFFICE

907 Santa Anita Drive Woodstock, GA 30189, U.S.A

Tel: 1-678-445-7768 Fax: 1-678-445-8120

AUSTIN OFFICE

4201 West Parmer Lane Bldg. B, Suite 280 Austin,

TX 78727, U.S.A

Tel: 1-512-339-5731 Fax: 1-512-821-3730

CHICAGO OFFICE

1920 North Thoreau Drive Suite 170 Schaumburg,

IL 60173, U.S.A

Tel: 1-847-925-0190 Fax: 1-847-925-0196

DALLAS OFFICE

1701 Gateway Blvd, Suite 357 Richardson,

TX 75080, U.S.A

Tel: 1-972-690-4969 Fax: 1-972-690-1065

DENVER OFFICE

2308 Hearth Drive #28 Evergreen CO 80439

, U.S.A

Tel: 1-303-679-3515

GLENDALE OFFICE

500 N. Central Avenue, Suite 810 Glendale, CA 91203

U.S.A

Tel: 1-818-242-7420 Fax: 1-818-242-7421

HOUSTON OFFICE

13455 Cutton Rd Suite 1-I Houston, TX 77069, U.S.A

Tel: 1-281-444-4908 Fax: 1-281-444-4918

NEW YORK OFFICE

10 Lafayette Court, Suite 10A Fishkill, NY 12524, U.S.A

Tel: 1-845-896-0353 Fax: 1-845-896-0577

RALEIGH OFFICE

5511 Capital Center Drive, Suite 330 Raleigh,

NC 27606, U.S.A

Tel: 1-919-859-1244 Fax: 1-919-859-3137

EUROPE

HYNIX SEMICONDUCTOR DEUTSCHLAND GMBH. (H.S.D)

Am Prime Parc 13 Kelsterbacher Str.16 D-65479

Raunheim Germany

Tel: 49-6142-921-100 / 206

Fax: 49-6142-921-290 / 214

MILANO OFFICE

Via Alessandro Volta 18, 20094 Corsico, Milano, Italy

Tel: 39-2-4862-0502 Fax: 39-2-4586-4733

MOSCOW OFFICE

123242, Moscow, Krasnaya Presnya str., 13, 5th fl,

room 33, Russia

Tel: 7-495-924-52-84 Fax: 7-495-924-52-84

PARIS OFFICE

Bureaux de Sevres-2 rue Troyon 92316 SEVRES Cedex,

Paris, France

Tel: 33-141-14-83-41 Fax: 33-141-14-83-40

STOCKHOLM OFFICE

Flygfaltsgaten 1, SE-12830 Skarpnack

Stockholm, Sweden

Tel: 46-8-605-7290 Fax: 46-8-605-2640

HELSINKI OFFICE

Technopolis, Innopoli 2, Tekniikkatie 14, 02150, Espoo,

Finland

Tel: 358-46-712-1081 Fax: 358-712-1080

HYNIX SEMICONDUCTOR U.K. LTD. (H.S.U)

241 Brooklands Road, Weybridge, Surrey KT13 0RH, U.K

Tel: 44-1932-827-700 Fax: 44-1932-827-745~7

LIMERICK OFFICE

3rd Floor, lvernia Hall, 97 Henry Street Limerick, Ireland

Tel: 353-61-400-755 Fax: 353-61-400-757

STIRLING OFFICE

Office 2/1 Springfield House Laurel Hill Business Park

Laurel Hill Stirling, FK 7 9JQ, Scotland, U.K

Tel: 44-1932-827-750 Fax: 44-1932-827-759

JAPAN

HYNIX SEMICONDUCTOR JAPAN INC. (H.S.J)

23F SHIROYAMA TRUST TOWER, 4-3-1 Toranomon,

Minatoku, Tokyo, Japan

Tel: 81-3-6403-5500 Fax: 81-3-6403-5590 / 5591

OSAKA OFFICE

12 th Fl., Sumitomo Seimei Shin-Osaka Higashiguchi

Bldg., 1-19-4 Higashinakajima, Higashiyodogawa-Ku

Osaka 533-0033, Japan

Tel: 81-6-4809-8851 Fax: 81-6-4809-8966

ASIA PACIFIC

HYNIX NUMONYX SEMICONDUCTOR LTD. (H.N.S.L)

Lot K7, Wuxi Export Processing Zone in Wuxi New

District, Wuxi, Jiangsu Province, China

Tel: 86-510-8520-8888

Fax: 86-510-8520-8181 / 8282

HYNIX SEMICONDUCTOR ASIA PTE. LTD. (H.S.S)

7 Temasek Boulevard #42-02, Suntec City Tower 1,

Singapore 038987

Tel: 65-6338-5966 Fax: 65-6336-5911 / 5922

PENANG OFFICE

Unit 17 lower level 5, Hotel Equatorial Penang 1 Jalan

Bukit Jambul Bayan Lepas 11900 Penang, Malaysia

Tel: 60-04-643-2428 Fax: 60-04-643-2432

HYNIX SEMICONDUCTOR INDIAN SUBCONTINENT PVT LTD. (H.S.I.S)

Unit 10, Level 8, Innovator Building, ITPB(International

Technology Park Bangalore), Whitefield Road,

Bangalore, 560066, India

Tel: 91-80-4126-5271~2 Fax: 91-80-4126-5274

HYNIX SEMICONDUCTOR HONG KONG LTD. (H.S.H)

Suite 2401, 24F., Central Plaza, 18 Harbour Road

Wanchai, Hong Kong

Tel: 852-2971-1600 Fax: 852-2971-1622

HYNIX SEMICONDUCTOR TAIWAN INC. (H.S.T)

Lite-On Technology Building 11F, No. 392,

Ruey Kuang Road, Neihu, Taipei 11492 Taiwan, R.O.C

Tel: 886-2-8752-2300 Fax: 886-2-8752-8368

HYNIX SEMICONDUCTOR (Shanghai) CO., LTD. (H.S.C.S)

Room 2702-2705, Maxdo Center, No.8, Xing Yi RD,

Changning Zone, Shanghai, China

Tel: 86-21-5208-0505 Fax: 86-21-5208-0802

BEIJING OFFICE

Room1401 Landmark Building, 8 North Dongsanhuan

Road, Chaoyang District, Beijing 100004, China

Tel: 86-10-6590-6546 Fax: 86-10-6590-0908

SHENZHEN OFFICE

Room1906-1909, Fu Chun Dong Fang Building

No 7006 ShenNan Road, ShenZhen, China

Tel: 86-755-8257-1591 Fax: 86-755-8257-1584

2H-10 Catalog

HY2010AUG