PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Aug. 1999
GUP
EUP
GUN
U
GVP
EVP
GVN
V
GWP
EWP
GWN
W E
R
S
T
P1 P
N1 TH1 TH2
B
GB
PPS
PPS
LABEL
MAIN CIRCUIT TERMINAL
t=0.6
CONTROL CIRCUIT TERMINAL
t=0.6
P1 N1
OPEN
OPEN OPEN P EUP
GUP EVP GVP EWP
GWP
R S T B TH1 U V W GB
TH2 E GUN
GVN
GWN
2.5
1.5
(2.5)
0.6
±0.1
4
φ6 φ6
13
6 11 11 11 11 11 11 7.62 7.62
2.542.54 2.54
6 11 11 11 102.5410 11 11 11
2.54
2.54
2.54
2.54
110
±0.25
120
63
5 5
2222
4
60
± 0.5
12 13
6.4
2-R5
2-φ4.5 MOUNTING HOLES
CIRCUIT DIAGRAM
CM25AD05-24H
MITSUBISHI IGBT MODULES
CM25AD05-24H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
¡IC . ................................................................... 25A
¡VCES . ....................................................... 1200V
¡Insulated Type
¡3φ Inverter + 3φ Converter + Brake
+ Thermistor
APPLICATION
AC & DC motor controls, General purpose inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
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PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Aug. 1999
V
V
A
W
V
A
V
V
A
A
W
MITSUBISHI IGBT MODULES
CM25AD05-24H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
1200
±20
25
50
25
50
—
1200
±20
25
50
—
1200
25
1600
440
25
250
260
V
V
A
A
A2s
–40 ~ +150
–40 ~ +125
2500
0.98 ~ 1.47
140
°C
°C
V
N·m
g
Collector Current
Emitter Current
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
G-E Short
C-E Short
TC = 25°C
PULSE (Note. 2)
TC = 25°C
PULSE (Note. 2)
TC = 25°C
Symbol Parameter Conditions UnitRating
VCES
VGES
IC
ICM
IE (
Note.1
)
IEM (
Note.1
)
PC (
Note.3
)
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
TC = 25°C
PULSE (Note. 2)
TC = 25°C
Clamp diode part
Clamp diode part
Symbol Parameter
Collector Current
Conditions UnitRating
VCES
VGES
IC
ICM
PC (
Note.3
)
VRRM
IFM (
Note.3
)
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I2t for fusing
3φ rectifying circuit
1/2 cycle at 60Hz, peak value, Non-repetitive
Value for one cycle of surge current
Symbol Parameter Conditions UnitRating
VRRM
Ea
IO
IFSM
I2t
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
AC 1 min.
Mounting M4 screw
Typical value
Symbol
Tj
Tstg
Viso
—
Parameter Conditions UnitRating
—
COMMON RATING
CONVERTER PART
BRAKE PART
MAXIMUM RATINGS
(Tj = 25°C)
INVERTER PART
http://store.iiic.cc/
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Aug. 1999
mA
µA
nF
nC
ns
V
ns
µC
°C/W
V
V
MITSUBISHI IGBT MODULES
CM25AD05-24H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
1
0.5
3.4
—
5.0
3.8
1.0
—
100
200
150
350
3.5
250
—
—
—
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 150°C
VCC = 600V, IC = 25A, VGE = 15V
VCC = 600V, IC = 25A
VGE1 = VGE2 = 15V
RG = 13Ω
Resistive load
IE = 25A, VGE = 0V
IE = 25A, VGE = 0V
die / dt = – 50A / µs
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
IC = 2.5mA, VCE = 10V
IC = 25A, VGE = 15V (Note.4)
VCE = 10V
VGE = 0V
—
—
2.7
2.45
—
—
—
125
—
—
—
—
—
—
0.22
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
64.5 7.5
V
V
1
0.5
3.4
—
5.0
3.8
1.0
—
1.5
—
—
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 150°C
VCC = 600V, IC = 25A, VGE = 15V
IF = 25A, Clamp diode part
IGBT part
Clamp diode part
mA
µA
nF
nC
V
°C/W
—
—
2.7
2.45
—
—
—
125
—
—
—
—
—
—
—
—
—
—
—
—
—
—
64.5 7.5IC = 2.5mA, VCE = 10V
IC = 25A, VGE = 15V (Note.4)
VCE = 10V
VGE = 0V
VR = VRRM, Tj = 150°C
IF = 25A
Per 1/6 module
mA
V
°C/W
—
—
—
—
—
—
8
1.5
—
ICES
IGES
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC(
Note.1
)
trr (
Note.1
)
Qrr (
Note.1
)
Rth(j-c)Q
Rth(j-c)R
Symbol Parameter Test conditions
VGE(th)
VCE(sat)
Collector cutoff current
Gate-emitter cutoff current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
Collector cutoff current
Gate-emitter cutoff current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
ICES
IGES
Cies
Coes
Cres
QG
VFM
Rth(j-c)Q
Rth(j-c)R
Symbol Parameter Test conditions
VGE(th)
VCE(sat)
Repetitive reverse current
Forward voltage drop
Thermal resistance
IRRM
VFM
Rth(j-c)
Symbol Parameter Test conditions
Typ.
Limits
Min. Max. Unit
Unit
Typ.
Limits
Min. Max.
Unit
Typ.
Limits
Min. Max.
BRAKE PART
CONVERTER PART
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
INVERTER PART
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PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Aug. 1999
—
—
MITSUBISHI IGBT MODULES
CM25AD05-24H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
kΩ
K
(100)
(4000)
—
—
— °C/W——
TC = 25°C
Resistance at 25°C, 50°C (Note.5)
Test conditions
Resistance
B Constant
RTH
B
Symbol Parameter
Note.1 IE, VEC, t rr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2 Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3 Junction temperature (Tj) should not increase beyond 150°C.
4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
5 B = (InR1-InR2)/(1/T1-1/T2) R1 : Resistance at T1(K)
R2 : Resistance at T2(K)
*1 : Typical value is measured by using Shin-etsu Silicone “G-746”.
Contact thermal resistance
Rth(c-f)
Symbol Parameter Test conditions
Case to fin, Thermal compound applied*1 (1 module)
( ) : These parametric limits are tentative.
Unit
Typ.
Limits
Min. Max.
Unit
Typ.
Limits
Min. Max.
THERMISTOR PART
COMMON RATING
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