N-Channel MOSFET 600V, 2.0A, 4.5 General Description Features These N-channel MOSFET are produced using advanced MagnaChip's MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. VDS = 600V ID = 2.0A RDS(ON) 4.5 @ VGS = 10V @ VGS = 10V Applications These devices are suitable device for SMPS, high Speed switching and general purpose applications. Power Supply PFC High Current, High Speed Switching D G TO-220 TO-220F S Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol MDP2N60 MDF2N60 Unit Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS 30 V o TC=25 C Continuous Drain Current ID o TC=100 C Pulsed Drain Current (1) IDM TC=25oC Power Dissipation PD Derate above 25 oC Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt 2.0 2.0* A 1.2 1.2* A 8.0 8.0* A 53.9 22.7 0.43 0.18 W W/ oC EAR 5.39 mJ dv/dt 4.5 V/ns EAS 115 mJ TJ, Tstg -55~150 (3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range o C * Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Mar. 2014 Version 1.5 (1) Symbol MDP2N60 MDF2N60 RJA 62.5 62.5 RJC 2.32 5.5 Unit o C/W (1) 1 MagnaChip Semiconductor Ltd. MDP2N60/MDF2N60 N-channel MOSFET 600V MDP2N60/MDF2N60 Part Number Temp. Range Package Packing RoHS Status MDP2N60TH -55~150oC TO-220 Tube Halogen Free TO-220F Tube Halogen Free o MDF2N60TH -55~150 C Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 600 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 3.0 - 5.0 Drain Cut-Off Current IDSS VDS = 600V, VGS = 0V - - 1 A Gate Leakage Current IGSS VGS = 30V, VDS = 0V - - 100 nA 3.6 4.5 - 0.5 - S - 6.7 - 2.2 - 2.5 - 275 360 - 1.4 2 40 Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 1.0A gfs VDS = 30V, ID = 1.0A Forward Transconductance V Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V, ID = 2.0A, VGS = 10V (3) Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss - 32 Turn-On Delay Time td(on) - 10.6 - 29.6 - 40.4 tf - 38.4 IS - - Rise Time tr Turn-Off Delay Time Fall Time td(off) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 300V, ID = 2.0A, RG = 25(3) nC pF ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VSD IS = 2.0A, VGS = 0V trr - 2.0 A 1.4 V - 206 ns - 0.76 C IF = 2.0A, dl/dt = 100A/s(3) Qrr Note : 1. Pulse width is based on RJC & RJA and the maximum allowed junction temperature of 150C. 2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150C. 3. ISD 2.0A, di/dt200A/us, VDD=50V, Rg =25, Starting TJ=25C 4. L=53mH, IAS=2.0A, Mar. 2014 Version 1.5 VDD=50V, Rg =25, Starting TJ=25C, 2 MagnaChip Semiconductor Ltd. MDP2N60/MDF2N60 N-channel MOSFET 600V Ordering Information 8 Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V 6 RDS(ON) [ ] ID,Drain Current [A] 3 7 Notes 1. 250 Pulse Test 2. TC=25 2 VGS=10.0V 5 VGS=20V 4 1 3 2 5 10 15 20 0 2 VDS,Drain-Source Voltage [V] ID,Drain Current [A] 1.2 3.0 Notes : BVDSS, (Normalized) Drain-Source Breakdown Voltage Notes : RDS(ON), (Normalized) Drain-Source On-Resistance 6 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 2.5 4 1. VGS = 10 V 2. ID = 1.0A 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 1. VGS = 0 V 2. ID = 250 1.1 1.0 0.9 0.8 -50 200 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature 10 Notes : 10 IDR Reverse Drain Current [A] ID(A) * Notes ; 1. Vds=30V 1 150 -55 25 0.1 2 4 6 8 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Mar. 2014 Version 1.5 25 150 1 0.1 0.0 10 1. VGS = 0 V 2.250s Pulse test Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDP2N60/MDF2N60 N-channel MOSFET 600V 4 MDP2N60/MDF2N60 N-channel MOSFET 600V 500 Note : ID = 2.0A 10 Coss 300V VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 120V 8 400 Capacitance [pF] 480V 6 4 Ciss 300 200 Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 2 100 0 0 0 2 4 6 1 8 Fig.7 Gate Charge Characteristics 10 Fig.8 Capacitance Characteristics 2 10 2 Operation in This Area is Limited by R DS(on) Operation in This Area is Limited by R DS(on) 1 10 ID, Drain Current [A] ID, Drain Current [A] 10 100 s 10 ms 1 ms 10 10 100 ms DC 0 -1 10 1 100 s 1 ms 10 ms 100 ms 0 DC 10 -1 Single Pulse TJ=Max rated TC=25 10 Single Pulse TJ=Max rated TC=25 -2 10 10 -1 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 0 10 1 10 -2 2 10 -1 10 0 10 1 10 2 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Fig.10 Maximum Safe Operating Area MDF2N60 (TO-220F) Fig.9 Maximum Safe Operating Area MDP2N60 (TO-220) D=0.5 D=0.5 0 10 0 0.2 Z JC(t), Thermal Response Z JC(t), Thermal Response 10 0.2 0.1 -1 10 0.05 0.02 0.01 0.05 -1 0.02 10 Notes : single pulse Notes : 0.01 Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC R JC=2.32/W Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC R JC=5.5/W single pulse -2 -2 10 0.1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] Fig.12 Transient Thermal Response Curve MDF2N60 (TO-220F) Fig.11 Transient Thermal Response Curve MDP2N60 (TO-220) Mar. 2014 Version 1.5 -5 10 10 t1, Rectangular Pulse Duration [sec] 4 MagnaChip Semiconductor Ltd. 8000 single Pulse RthJC = 2.32/W TC = 25 6000 6000 Power (W) 5000 Power (W) single Pulse RthJC = 5.5/W TC = 25 4000 3000 2000 4000 2000 1000 0 1E-5 1E-4 1E-3 0.01 0.1 1 0 1E-5 10 Pulse Width (s) 1E-4 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.13 Single Pulse Maximum Power Dissipation MDP2N60 (TO-220) Fig.14 Single Pulse Maximum Power Dissipation MDF2N60 (TO-220F) ID, Drain Current [A] 3 2 1 0 25 50 75 100 125 150 TC, Case Temperature [] Fig.15 Maximum Drain Current vs. Case Temperature Mar. 2014 Version 1.5 5 MagnaChip Semiconductor Ltd. MDP2N60/MDF2N60 N-channel MOSFET 600V 7000 3 Leads, TO-220 Dimensions are in millimeters unless otherwise specified Mar. 2014 Version 1.5 6 MagnaChip Semiconductor Ltd. MDP2N60/MDF2N60 N-channel MOSFET 600V Physical Dimensions 3 Leads, TO-220F Dimensions are in millimeters unless otherwise specified Symbol A b b1 C D E e F G L L1 Q Q1 R Mar. 2014 Version 1.5 Min 4.50 0.63 1.15 0.33 15.47 9.60 Nom Max 4.93 0.91 1.47 0.63 16.13 10.71 2.54 2.34 6.48 12.24 2.79 2.52 3.10 3.00 2.84 6.90 13.72 3.67 2.96 3.50 3.55 7 MagnaChip Semiconductor Ltd. MDP2N60/MDF2N60 N-channel MOSFET 600V Physical Dimensions MDP2N60/MDF2N60 N-channel MOSFET 600V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Mar. 2014 Version 1.5 8 MagnaChip Semiconductor Ltd.