Semiconductor Group 1 Dec-16-1996
BFG 135A
NPN Silicon RF Transistor
• For low-distortion broadband output amplifier
stages in antenna and telecommunications
systems up to 2 GHz at collector currents from
70mA to 130mA
• Power amplifiers for DECT and PCN systems
• Integrated emitter ballast resistor
•
f
T = 6 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Ordering Code Pin Configuration Package
BFG 135A BFG135A Q62702-F1322 1 = E 2 = B 3 = E 4 = C SOT-223
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CEO 15 V
Collector-emitter voltage
V
CES 25
Collector-base voltage
V
CBO 25
Emitter-base voltage
V
EBO 2
Collector current
I
C 150 mA
Base current
I
B 20
Total power dissipation
T
S ≤ 100 °C
P
tot 1000 mW
Junction temperature
T
j 150 °C
Ambient temperature
T
A- 65 ... + 150
Storage temperature
T
stg - 65 ... + 150
Thermal Resistance
Junction - soldering point 1)
R
thJS ≤ 50 K/W
1)
T
S is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group 2 Dec-16-1996
BFG 135A
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
C = 1 mA,
I
B = 0
V
(BR)CEO 15 - - V
Collector-emitter cutoff current
V
CE = 25 V,
V
BE = 0
I
CES - - 100 µA
Collector-base cutoff current
V
CB = 10 V,
I
E = 0
I
CBO - - 50 nA
Emitter-base cutoff current
V
EB = 1 V,
I
C = 0
I
EBO - - 1 µA
DC current gain
I
C = 100 mA,
V
CE = 8 V
h
FE 80 120 250 -
Semiconductor Group 3 Dec-16-1996
BFG 135A
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
I
C = 100 mA,
V
CE = 8 V,
f
= 200 MHz
f
T
4.5 6 - GHz
Collector-base capacitance
V
CB = 10 V,
f
= 1 MHz
C
cb - 1.3 1.8 pF
Collector-emitter capacitance
V
CE = 10 V,
f
= 1 MHz
C
ce - 0.8 -
Emitter-base capacitance
V
EB = 0.5 V,
f
= 1 MHz
C
eb - 7.5 -
Noise figure
I
C = 30 mA,
V
CE = 8 V,
Z
S =
Z
Sopt
f
= 900 MHz
f
= 1.8 GHz
F
-
- 3.7
2 -
-
dB
Power gain 2)
I
C = 100 mA,
V
CE = 8 V,
Z
S =
Z
Sopt
Z
L =
Z
Lopt
f
= 900 MHz
f
= 1.8 GHz
G
ma
-
- 9
14 -
-
Transducer gain
I
C = 100 mA,
V
CE = 8 V,
Z
S =
Z
L= 50 Ω
f
= 900 MHz
f
= 1.8 GHz
|
S
21e|2
-
- 4
10 -
-
Third order intercept point
I
C = 100 mA,
V
CE = 8 V,
f
= 900 MHz
Z
S =
Z
L= 50 Ω
IP
3
- 38 -
dBm
2)
G
ma = |
S
21/
S
12| (k-(k2-1)1/2)
Semiconductor Group 4 Dec-16-1996
BFG 135A
Total power dissipation
P
tot =
f
(
T
A*,
T
S)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
100
200
300
400
500
600
700
800
900
1000
mW
1200
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
P
totmax/
P
totDC =
f
(
t
p)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
-
P
totmax/
P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 5 Dec-16-1996
BFG 135A
Collector-base capacitance
C
cb =
f
(
V
CB)
V
BE =
v
be = 0,
f
= 1MHz
04812 16 V 22
V
R
0.0
0.5
1.0
1.5
2.0
2.5
3.0
pF
4.0
C
cb
Transition frequency
f
T =
f
(
I
C)
V
CE = Parameter
020 40 60 80 100 120 140 mA 170
I
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
GHz
7.0
fT
10V 5V
3V
2V
1V
0.7V
Power Gain
G
ma,
G
ms =
f
(
I
C)
f
= 0.9GHz
V
CE = Parameter
020 40 60 80 100 120 140 mA 170
I
C
0
2
4
6
8
10
12
dB
16
G
10V 5V
3V
2V
1V
0.7V
Power Gain
G
ma,
G
ms =
f
(
I
C)
f
= 1.8GHz
V
CE = Parameter
020 40 60 80 100 120 140 mA 170
I
C
0
1
2
3
4
5
6
7
8
9
dB
11
G
10V 5V
3V
2V
1V
0.7V
Semiconductor Group 6 Dec-16-1996
BFG 135A
Power Gain
G
ma,
G
ms =
f
(
V
CE):_____
|
S
21|2 =
f
(
V
CE):---------
f
= Parameter
02468V12
V
CE
0
1
2
3
4
5
6
7
8
9
10
11
12
13
dB
15
G
0.9GHz
1.8GHz
0.9GHz
I
C=100mA
Intermodulation Intercept Point
IP
3=
f
(
I
C)
(3rd order, Output,
Z
S=
Z
L=50Ω)
V
CE = Parameter,
f
= 900MHz
020 40 60 80 100 120 mA 160
I
C
10
15
20
25
30
35
dBm
45
IP
3 10V 8V
5V
3V
2V
1V
Power Gain
G
ma,
G
ms =
f
(
f
)
V
CE = Parameter
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
0
5
10
15
20
dB
30
G
10V
2V
1V
0.7V
I
C=100mA
Power Gain |
S
21|2=
f
(
f
)
V
CE = Parameter
0.0 0.5 1.0 1.5 2.0 GHz 3.0
f
-5
0
5
10
15
20
dB
30
S
21
10V
2V 1V
0.7
I
C=100mA
