Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low On-Resistance BVDSS 30V
▼ Simple Drive Requirement RDS(ON) 11mΩ
▼ Fast Switching Characteristic ID12A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient350 ℃/W
Data and specifications subject to change without notice
200810084
1
AP6680AGM
Rating
30
+20
12
0.02
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Storage Temperature Range
Continuous Drain Current39.8
Pulsed Drain Current160
RoHS-compliant Product
Thermal Data
Parameter
Total Power Dissipation 2.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S
SSSG
D
DDD
SO-8
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=12A - - 11 mΩ
VGS=4.5V, ID=8A - - 16.5 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.8 - 2.5 V
gfs Forward Transconductance VDS=10V, ID=12A - 12 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=+20V - - +100 nA
QgTotal Gate Charge2ID=12A - 17 27 nC
Qgs Gate-Source Charge VDS=25V - 2.7 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 9.9 - nC
td(on) Turn-on Delay Time2VDS=15V - 9 - ns
trRise Time ID=1A - 6 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 29 - ns
tfFall Time RD=15Ω-8-
ns
Ciss Input Capacitance VGS=0V - 1000 1600 pF
Coss Output Capacitance VDS=25V - 220 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 175 - pF
RgGate Resistance f=1.0MHz - 1 1.5 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=2.1A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=12A, VGS=0V, - 26 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 20 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6680AGM
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
AP6680AG
M
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. On-Resistance vs.
Reverse Diode Drain Current
3
0
10
20
30
40
50
012345
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC 10V
7.0V
5.0V
4.5V
VG=3.0V
0
10
20
30
40
50
01234567
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC 10V
7.0V
5.0V
4.5V
VG=3.0V
0
20
40
60
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=8A
TA=25
℃
0.7
1.0
1.3
1.6
25 50 75 100 125 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=12A
VG=10V
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.0
10.0
20.0
0 10203040
ID , Drain Current (A)
RDS(ON) (m
Ω
)
VGS =10V
VGS =4.5V
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
AP6680AGM
Q
VG
4.5V
QGS QGD
QG
Charge
0
4
8
12
16
0 10203040
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =15V
VDS =20V
VDS =25V
ID=12A
100
1000
10000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 135℃/W
tT
0.02
0
10
20
30
40
50
0246
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =5V
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
A1 0.10 0.18 0.25
B 0.33 0.41 0.51
c 0.19 0.22 0.25
D 4.80 4.90 5.00
E 5.80 6.15 6.50
E1 3.80 3.90 4.00
e
G
L 0.38 －0.90
α0.00 4.00 8.00
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : SO-8
1.27 TYP
0.254 TYP
Package Outline : SO-8
ADVANCED POWER ELECTRONICS CORP.
e
B
134
5678
2
D
E1
A1
A
G
Part Number
6680AG
M
YWWSSS
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
E
5
meet Rohs requirement
