AP6680AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance D Simple Drive Requirement Fast Switching Characteristic BVDSS 30V RDS(ON) 11m ID G 12A S D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D SO-8 S S S G Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 30 V +20 V 3 12 A 3 9.8 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 60 A PD@TA=25 Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 50 /W 1 200810084 AP6680AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 30 - - V - 0.02 - V/ VGS=10V, ID=12A - - 11 m VGS=4.5V, ID=8A - - 16.5 m 0.8 - 2.5 V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=10V, ID=12A - 12 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V - - 25 uA Gate-Source Leakage VGS=+20V - - +100 nA ID=12A - 17 27 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=25V - 2.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 9.9 - nC VDS=15V - 9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 6 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 29 - ns tf Fall Time RD=15 - 8 - ns Ciss Input Capacitance VGS=0V - 1000 1600 pF Coss Output Capacitance VDS=25V - 220 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 175 - pF Rg Gate Resistance f=1.0MHz - 1 1.5 Min. Typ. IS=2.1A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=12A, VGS=0V, - 26 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 20 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP6680AGM 50 50 10V 7.0 V 5.0 V 4.5 V ID , Drain Current (A) 40 40 V G = 3.0 V 30 10V 7.0 V 5.0 V 4.5 V o T A = 150 C ID , Drain Current (A) o T A = 25 C 20 10 V G = 3.0 V 30 20 10 0 0 0 1 2 3 4 5 0 1 2 3 4 5 6 7 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 1.6 ID=8A T A =25 Normalized RDS(ON) I D = 12 A V G =10V RDS(ON) (m) 40 20 1.3 1.0 0.7 0 2 4 6 8 25 10 V GS , Gate-to-Source Voltage (V) 50 75 100 125 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 20.0 10 T j =150 o C 8 T j =25 o C RDS(ON) (m) V GS =4.5V IS(A) 6 4 V GS =10V 10.0 2 0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 0 10 20 30 40 I D , Drain Current (A) Fig 6. On-Resistance vs. Drain Current 3 AP6680AGM f=1.0MHz 10000 VGS , Gate to Source Voltage (V) 16 I D = 12 A 12 C (pF) V DS =15V V DS =20V V DS = 25 V 8 C iss 1000 4 C oss C rss 100 0 0 10 20 30 1 40 5 9 Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 10 100us 1ms ID (A) 13 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 10ms 1 100ms 1s 0.1 T A =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja = 135/W DC 0.001 0.01 0.01 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 V DS =5V VG o T j =25 C T j =150 C 40 ID , Drain Current (A) o QG 4.5V 30 QGS QGD 20 10 Charge Q 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D Millimeters 8 7 6 5 E1 1 2 3 4 e B E SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 c 0.19 0.22 0.25 D 4.80 4.90 5.00 E 5.80 6.15 6.50 E1 3.80 3.90 4.00 e 1.27 TYP G 0.254 TYP L 0.38 0.90 0.00 4.00 8.00 A A1 G 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 6680AGM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5