1MBC03-120,1MB03D-120, Molded IGBT 1200V / 3A Molded Package Features * Small molded package * Low power loss * Soft switching with low switching surge and noise * High reliability, high ruggedness (RBSOA, SCSOA etc.) * Comprehensive line-up Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply Equivalent Circuit Schematic Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) 1MBC03-120 / IGBT Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25C current Tc=100C 1ms Tc=25C Max. power dissipation(IGBT) Operating temperature Storage temperature Screw torque IGBT Symbol VCES VGES IC25 IC100 Icp PC Tj Tstg - Rating 1200 20 5 2.5 15 70 +150 -40 to +150 40 Unit V V A A A W C C N*m C:Collector G:Gate E:Emitter 1MB03D-120 / IGBT+FWD Item Collector-Emitter voltage Gate-Emitter voltaga Collector DC Tc=25C current Tc=100C 1ms Tc=25C Max. power dissipation (IGBT) Max. power dissipation (FWD) Operating temperature Storage temperature Screw torque Symbol VCES VGES IC25 IC100 Icp PC PC Tj Tstg - Rating 1200 20 5 2.5 15 70 40 +150 -40 to +150 40 Unit V V A A A W W C C N*m http://store.iiic.cc/ IGBT + FWD C:Collector G:Gate E:Emitter Molded IGBT 1MBC03-120, 1MB03D-120 Electrical characteristics (at Tj=25C unless otherwise specified) 1MBC03-120 / IGBT Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Characteristics Min. Typ. ICES - - 5.5 - - - - - - - - IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf Turn-off time - - - - 400 70 20 - - - - Conditions Unit VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=2.5mA VGE=15V, IC=2.5A VGE=0V VCE=10V f=1MHz VCC=600V IC=2.5A VGE=15V RG=430 ohm (Half Bridge) mA A V V pF Conditions Unit VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=2.5mA VGE=15V, IC=2.5A VGE=0V V CE=10V f=1MHz VCC=600V, I C=2.5A VGE=15V RG=430 ohm (Half Bridge) IF=2.5A, VGE=0V IF=2.5A, VGE=-10V, di/dt=100A/s mA A V V pF Max. 1.0 20 8.5 3.5 - - - 1.2 0.6 1.5 0.5 s 1MB03D-120 / IGBT+FWD Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Characteristics Min. Typ. ICES - - 5.5 - - - - - - - - - - IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Turn-off time FWD forward on voltage Reverse recovery time - - - - 400 70 20 - - - - - - Max. 1.0 20 8.5 3.5 - - - 1.2 0.6 1.5 0.5 3.0 0.35 s V s Thermal resistance characteristics 1MBC03-120 / IGBT Item Thermal resistance Symbol Rth(j-c) Characteristics Min. Typ. - - Conditions Unit Max. 1.78 IGBT C/W 1MB03D-120 / IGBT+FWD Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Characteristics Min. Typ. - - - - Conditions Unit Max. 1.78 3.12 IGBT FWD Outline drawings, mm 1MBC03-120 1MB03D-120 TO-220AB TO-3P http://store.iiic.cc/ C/W C/W 1MBC03-120, 1MB03D-120 Molded IGBT Characteristics 1MBC03-120,1MB03D-120 Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage Tj=125C 5 5 4 4 Collector current : Ic [A] Collector current : Ic [A] Tj=25C 3 2 3 2 1 1 0 0 0 1 2 3 4 5 0 1 Collector-Emitter voltage : VCE [V] 4 5 Tj=125C 10 10 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 3 Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage Tj=25C 8 6 4 2 0 8 6 4 2 0 0 5 10 15 20 0 5 Gate-Emitter voltage : VGE [V] 10 15 20 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=430 ohm, VGE=15V, Tj=25C Switching time vs. Collector current Vcc=600V, RG=430 ohm, VGE=15V, Tj=125C 1000 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 2 Collector-Emitter voltage : VCE [V] 100 100 10 10 0 1 2 3 4 5 0 Collector current : Ic [A] http://store.iiic.cc/ 1 2 3 Collector current : Ic [A] 4 5 IGBT Module 1MBC03-120, 1MB03D-120 Characteristics 1MBC03-120,1MB03D-120 Switching time vs. RG Vcc=600V, Ic=2.5A, VGE=15V, Tj=125C Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] Switching time vs. RG Vcc=600V, Ic=2.5A, VGE=15V, Tj=25C 1000 1000 100 100 100 100 1000 1000 Gate resistance : RG [ohm] Gate resistance : RG [ohm] Dynamic input characteristics 1000 Tj=25C 25 20 600 15 400 10 200 5 0 1000 Capacitance : Cies, Coes, Cres [nF] 800 Gate-Emitter voltage : VGE [V] Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage Tj=25C 20 40 Gate charge : Qg [nC] 10 1 0 0 100 0 60 5 10 15 20 25 Collector-Emitter voltage : VCE [V] 30 35 Typical short circuit capability Vcc=800V, RG=430 ohm, Tj=125C Reversed biased safe operating area < +VGE=15V, -VGE = 15V, Tj < = 125C, RG > = 430 ohm 6 200 80 150 60 100 40 50 20 4 3 2 1 0 0 0 200 400 600 800 1000 1200 0 5 Collector-Emitter voltage : VCE [V] http://store.iiic.cc/ 10 15 Gate voltage : VGE [V] 20 25 Short circuit time : tsc [s] Short circuit time current : Isc [A] Collector current : Ic [A] 5 1MBC03-120, 1MB03D-120 IGBT Module Characteristics 1MBC03-120,1MB03D-120 Thermal resistance : Rth (j-c) [C/W] Transient thermal resistance 101 100 10-1 10-2 10-4 10-3 10-2 10-1 100 Pulse width : PW [sec.] 1MB03D-120 Reverse recovery time vs. Forward current Reverse recovery current vs. Forward current -di/dt=7.5A / sec -di/dt=7.5A / sec 800 2.5 2.0 reverse recovery current : Irr [A] reverse recovery time : trr [nsec] 600 400 200 1.5 1.0 0.5 0 0 0 1 2 3 4 0 5 1 Forward current : IF [A] 2 3 4 5 Forward current : IF [A] Reverse recovery time characteristics vs. -di/dt IF=2.5A, Tj=125C Forward current vs. Foeward voltage 700 3.5 600 3.0 500 2.5 400 2.0 300 1.5 200 1.0 100 0.5 reverse recovery time : trr [nsec] 4 Forward current : IF [A] 3 2 1 0 0 0 1.0 2.0 3.0 4.0 0 0 Forward voltage : VF [V] 5 10 15 -di/dt http://store.iiic.cc/ 20 [ A / sec ] 25 30 reverse recovery current : Irr [A] 5