SQJ946EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY VDS (V) * TrenchFET(R) power MOSFET 40 RDS(on) () at VGS = 10 V 0.033 RDS(on) () at VGS = 4.5 V 0.039 ID (A) per leg * AEC-Q101 qualified * 100 % Rg and UIS tested * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 15 Configuration Dual Package PowerPAK SO-8L PowerPAK(R) SO-8L Dual D1 D2 D1 D2 6. 15 m m 1 13 5. m m Top View 4 G2 2 3 G1 S2 G1 1 S1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS 20 Continuous Drain Current TC = 25 C a TC = 125 C Continuous Source Current (Diode conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH ID TC = 25 C TC = 125 C Operating Junction and Storage Temperature Range 15 IS 15 40 IAS 11 PD TJ, Tstg Soldering Recommendations (Peak temperature) d, e V 11 IDM EAS UNIT 6 27 9 -55 to +175 260 A mJ W C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) SYMBOL PCB mount c LIMIT RthJA 85 RthJC 5.5 UNIT C/W Notes a. Package limited. b. Pulse test; pulse width 300 s, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S16-1321-Rev. A, 04-Jul-16 Document Number: 75159 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ946EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b VDS VGS = 0 V, ID = 250 A 40 - - VGS(th) VDS = VGS, ID = 250 A 1.5 2.0 2.5 VDS = 0 V, VGS = 20 V IGSS IDSS ID(on) RDS(on) gfs - - 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 C - - 150 VGS = 10 V VDS 5 V 10 - - VGS = 10 V ID = 7 A - 0.027 0.033 VGS = 10 V ID = 7 A, TJ = 125 C - - 0.056 VGS = 10 V ID = 7 A, TJ = 175 C - - 0.070 VGS = 4.5 V ID = 4 A - 0.032 0.039 - 29 - - 395 600 - 60 85 - 25 40 VDS = 15 V, ID = 5 A V nA A A S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Rg VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 4 A f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 5 ID 4 A, VGEN = 10 V, Rg = 1 tf Source-Drain Diode Ratings and Characteristics - 10 20 - 1.4 - - 2.2 - 2 4.2 6.5 - 7 15 - 3 10 - 14 30 - 2 5 pF nC ns b Pulsed Current a ISM Forward Voltage VSD IF = 7 A, VGS = 0 V - - 40 A - 0.88 1.2 V Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1321-Rev. A, 04-Jul-16 Document Number: 75159 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ946EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 40 VGS = 10 V thru 4 V 1st line 2nd line 16 100 VGS = 3 V 1000 18 1st line 2nd line 1000 24 8 10000 24 2nd line ID - Drain Current (A) 32 2nd line ID - Drain Current (A) 30 10000 12 100 TC = 125 C TC = 25 C 6 TC = -55 C 0 10 0 2 4 6 8 0 10 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 10 Axis Title 50 0.10 10000 10000 1000 TC = 125 C 20 100 10 0 1.6 3.2 4.8 6.4 1000 0.06 0.04 VGS = 4.5 V 100 0.02 VGS = 10 V 0.00 10 0.0 0.08 8.0 10 0 5 On-Resistance vs. Drain Current Axis Title 1st line 2nd line 240 100 Coss Crss 10 16 24 32 40 10000 ID = 4 A VDS = 20 V 8 1000 6 1st line 2nd line 1000 360 2nd line VGS - Gate-to-Source Voltage (V) Ciss 8 4 100 2 0 10 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S16-1321-Rev. A, 04-Jul-16 25 10 480 2nd line C - Capacitance (pF) 20 Transconductance 10000 0 15 ID - Drain Current (A) 2nd line Axis Title 0 10 ID - Drain Current (A) 2nd line 600 120 1st line 2nd line TC = 25 C 30 2nd line RDS(on) - On-Resistance () 40 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 C 15 Document Number: 75159 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ946EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 ID = 7 A 10 VGS = 10 V 1000 1.7 VGS = 4.5 V 1.3 100 0.9 0.5 0 25 50 TJ = 150 C 0.1 100 0.01 0.001 10 -50 -25 10 0 75 100 125 150 175 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (C) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.15 0.5 10000 10000 0.2 1000 0.09 0.06 TJ = 150 C 100 0.03 1000 -0.1 ID = 5 mA -0.4 100 -0.7 ID = 250 A TJ = 25 C 0.00 -1.0 10 0 2 4 6 8 1st line 2nd line 2nd line VGS(th) Variance (V) 0.12 1st line 2nd line 2nd line RDS(on) - On-Resistance () 1000 TJ = 25 C 1 1st line 2nd line 2nd line IS - Source Current (A) 2.1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.5 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 10000 ID = 1 mA 52 1000 49 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 55 46 100 43 40 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) 2nd line Drain Source Breakdown vs. Junction Temperature S16-1321-Rev. A, 04-Jul-16 Document Number: 75159 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ946EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) Axis Title 1000 10000 IDM limited 1000 100 s 10 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms ID limited 10 ms 100 ms, 1 s, 10100 s, DC 1 Limited by RDS(on) (1) 0.1 TC = 25 C Single pulse 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S16-1321-Rev. A, 04-Jul-16 Document Number: 75159 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ946EP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 C, unless otherwise noted) Axis Title 1 Duty Cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note * The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75159. S16-1321-Rev. A, 04-Jul-16 Document Number: 75159 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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