BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features BVDSS RDS(ON) Package ID TA = +25C * * Low Input Capacitance High BVDSS Rating for Power Application 600V 160 @ VGS = 10V SC59 SOT23 70mA * * * * Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation uses advanced planar technology MOSFET, provide excellent high voltage and fast switching, making it ideal for small-signal and level shift applications. Mechanical Data * * Case: SC59 / SOT23 Case Material: Molded Plastic "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 e3 Applications * * * * * * Motor Control Backlighting DC-DC Converters Power Management Functions * * Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) Drain SOT23 D SC59 Gate S G Source Top View Equivalent Circuit Top View Ordering Information (Note 4) Part Number BSS127SSN-7 BSS127S-7 Notes: Case SC59 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 Date Code Key Year Code Month Code 2013 A Jan 1 2014 B Feb 2 BSS127 Document number: DS35476 Rev. 7 - 2 Mar 3 K28 2015 C Apr 4 May 5 2016 D Jun 6 1 of 6 www.diodes.com K28 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) YM K29 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) YM K29 SC59 2017 E Jul 7 Aug 8 2018 F Sep 9 Oct O 2019 G Nov N Dec D March 2016 (c) Diodes Incorporated BSS127 Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State Continuous Drain Current (Note 6) VGS = 10V Steady State Continuous Drain Current (Note 5) VGS = 5V Steady State Continuous Drain Current (Note 6) VGS = 5V Steady State TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C TA = +25C TA = +70C Pulsed Drain Current @ TSP = +25C (Note 7) ID Value 600 20 50 40 ID 70 55 mA ID 45 35 mA 65 50 0.16 ID IDM Unit V V mA mA A Thermal Characteristics Characteristic Power Dissipation, @TA = +25C (Note 5) Thermal Resistance, Junction to Ambient @ TA = +25C (Note 5) Power Dissipation, @TA = +25C (Note 6) Thermal Resistance, Junction to Ambient @ TA = +25C (Note 6) Operating and Storage Temperature Range Symbol PD RJA PD RJA TJ, TSTG Value 0.61 204 1.25 100 -55 to +150 Unit W C/W W C/W C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25C Gate-Body Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 600 -- -- -- -- -- -- 0.1 100 V A nA VGS = 0V, ID = 250A VDS = 600V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) |Yfs| VSD -- 80 95 76 -- 4.5 160 190 -- 1.5 V Static Drain-Source On-Resistance 3 -- -- -- -- mS V VDS = VGS, ID = 250A VGS = 10V, ID = 16mA VGS = 5.0V, ID = 16mA VDS = 10V, ID = 16mA VGS = 0V, IS = 16mA Ciss Coss Crss Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR -- -- -- -- -- -- -- -- -- -- -- -- 21.8 2.2 0.3 1.08 0.08 0.50 5.0 7.2 28.7 168 131 32 -- -- -- -- -- -- -- -- -- -- -- -- pF VDS = 25V, VGS = 0V, f = 1.0MHz nC VGS = 10V, VDD = 300V, ID = 0.01A Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: ns ns ns ns ns nC Test Condition VDD = 300V, VGS = 10V, RGEN = 6, ID = 10mA VR =300V, IF =0.016A, di/dt = 100A/s 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 1" x 1" FR-4 PCB with high coverage 2 oz. Copper, single sided. 7. Repetitive rating, pulse width limited by junction temperature, 10s pulse, duty cycle = 1%. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. BSS127 Document number: DS35476 Rev. 7 - 2 2 of 6 www.diodes.com March 2016 (c) Diodes Incorporated BSS127 0.030 100 VDS= 10V ID, DRAIN CURRENT (mA) IIDD,, DRAIN DRAIN CURRENT CURRENT(A) 0.025 0.020 0.015 0.010 10 0.005 0.000 1 0 2 4 6 8 VDS, DRAIN -SOURCE VOLTAGE(V) Figure 1 Typical Output Characteristics 10 TA=150C TA=85C 5 TA=125C 100 TA=25C TA=-55C 200 150 100 50 0 -50 10 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 4 On-Resistance Variation with Temperature 30 100 5 4.8 TA= 150C 4.6 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2 3 4 VGS, GATE SOURCE VOLTAGE(V) Figure 2 Typical Transfer Characteristics 250 VGS = 10V R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) RDS(ON),DRAIN-SOURCE ON-RESISTANCE( ) 1000 1 4.4 4.2 ID = 250A 4 3.8 3.6 3.4 TA= 125C TA= 25C 10 TA= 85 C TA= -55C 3.2 3 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE () Figure 5. Gate Threshold Variation vs. Ambient Temperature BSS127 Document number: DS35476 Rev. 7 - 2 3 of 6 www.diodes.com 1 0.1 0.3 0.5 0.7 0.9 1.1 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 6 Diode Forward Voltage vs. Current March 2016 (c) Diodes Incorporated 500 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () BSS127 400 300 200 100 0 200 RDS(ON)() Ave @ ID = 20mA 180 160 140 120 100 80 60 40 20 0 0 0.005 0.01 0.015 0.02 0.025 VGS, GATE-SOURCE VOLTAGE (V) Figure 7 Typical On-Resistance vs. Drain Current and Gate Voltage 4 5 6 7 8 9 V GS, GATE-SOURCE VOLTAGE (V) Figure 8 Typical Transfer Characteristic 10 f = 1MHz VDS =25V, ID=250mA 40 8 35 30 CISS VGS (V) CT, CAPACITANCE (pF) 3 10 50 45 2 25 20 6 4 15 10 2 CRSS 5 0 0 5 COSS 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 0 40 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 QG - (nC) Figure 10 Gate Charge Characteristics 1 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.5 D = 0.3 D = 0.7 D = 0.9 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 R(t) RJA RJA = r(t)** R JA(t)=r(t) JA o RJA C/W R= =164C/W JA164 Duty Cycle, = t1/t2 Duty Cycle,D D=t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 11 Transient Thermal Resistance BSS127 Document number: DS35476 Rev. 7 - 2 4 of 6 www.diodes.com March 2016 (c) Diodes Incorporated BSS127 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SC59 A SC59 Min Max Typ 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 G 1.90 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75 0 8 All Dimensions in mm Dim A B C G H K M N J L D SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm G F Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SC59 Y Z C X BSS127 Document number: DS35476 Rev. 7 - 2 Dimensions Value (in mm) Z 3.4 X 0.8 Y 1.0 C 2.4 E 1.35 E 5 of 6 www.diodes.com March 2016 (c) Diodes Incorporated BSS127 Suggested Pad Layout (cont.) Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y Dimensions C X X1 Y Y1 C Y1 X Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright (c) 2016, Diodes Incorporated www.diodes.com BSS127 Document number: DS35476 Rev. 7 - 2 6 of 6 www.diodes.com March 2016 (c) Diodes Incorporated