IRF7424 - International Rectifier

Parameter Max. Units

VDS Drain- Source Voltage -30 V

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -11

ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -9.3 A

IDM Pulsed Drain Current -47

PD @TA = 25°C Power Dissipation 2.5

PD @TA = 70°C Power Dissipation 1.6

Linear Derating Factor 20 mW/°C

VGS Gate-to-Source Voltage ± 20 V

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

3/29/01

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IRF7424

HEXFET® Power MOSFET

These P-Channel MOSFETs from International

Rectifier utilize advanced processing techniques to

achieve the extremely low on-resistance per silicon

area. This benefit provides the designer with an

extremely efficient device for use in battery and load

management applications..

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

Description

lUltra Low On-Resistance

lP-Channel MOSFET

lSurface Mount

lAvailable in Tape & Reel

PD- 94024A

Parameter Max. Units

RθJA Maximum Junction-to-Ambient50 °C/W

Thermal Resistance

Absolute Maximum Ratings

Top View

VDSS RDS(on) max (mΩ)Ω)

Ω)Ω)

Ω) ID

-30V 13.5@VGS = -10V -11A

22@VGS = -4.5V -8.8A

SO-8

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Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -30 –– – –– – V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, ID = -1mA

––– ––– 13.5 VGS = -10V, ID = -11A 

––– ––– 22 VGS = -4.5V, ID = -8.8A 

VGS(th) Gate Threshold Voltage -1.0 ––– -2.5 V VDS = VGS, ID = -250µA

gfs Forward Transconductance 17 ––– ––– S VDS = -10V, ID = -11A

––– ––– -15 VDS = -24V, VGS = 0V

––– ––– -25 VDS = -24V, VGS = 0V, TJ = 70°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V

Gate-to-Source Reverse Leakage ––– –– – 10 0 VGS = 20V

QgTotal Gate Charge –– – 7 5 11 0 ID = -11A

Qgs Gate-to-Source Charge ––– 14 21 nC VDS = -15V

Qgd Gate-to-Drain ("Miller") Charge ––– 12 18 VGS = -10V

td(on) Turn-On Delay Time ––– 15 ––– VDD = -15V 

trRise Time ––– 23 ––– ID = -1.0A

td(off) Turn-Off Delay Time ––– 150 ––– RG = 6.0 Ω

tfFall Time ––– 76 ––– VGS = -10V

Ciss Input Capacitance ––– 4030 ––– VGS = 0V

Coss Output Capacitance ––– 580 ––– pF VDS = -25V

Crss Reverse Transfer Capacitance ––– 410 ––– ƒ = 1.0kHz

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V 

trr Reverse Recovery Time ––– 40 60 n s TJ = 25°C, IF = -2.5A

Qrr Reverse Recovery Charge ––– 47 71 nC di/dt = -100A/µs 

Source-Drain Ratings and Characteristics

-47

–––

-2.5

–––

 Repetitive rating; pulse width limited by

max. junction temperature.

Notes:

 Pulse width ≤ 400µs; duty cycle ≤ 2%.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

mΩ

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

 Surface mounted on 1 in square Cu board

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1

100

1000

0.1 1 10 100

s PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V

-2.5V

-V , Drain-to-Source Volta

e (V)

-I , Drain-to-Source Current (A)

-2.5V

100

1000

0.1 1 10 100

s PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

-10V

-4.5V

-3.7V

-3.5V

-3.3V

-3.0V

-2.7V

-2.5V

-V , Drain-to-Source Volta

e (V)

-I , Drain-to-Source Current (A)

-2.5V

0.1

100

2.5 3.0 3.5 4.0 4.5 5.0

V = -15V

20µs PULSE WIDTH

-V , Gate-to-Source Volta

e (V)

-I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

-10V

-11A

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0.1

100

0.4 0.6 0.8 1.0 1.2

-V ,Source-to-Drain Volta

e (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

1 10 100

1000

2000

3000

4000

5000

6000

-V , Drain-to-Source Volta

e (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss

d , ds

rss

oss ds

Ciss

Coss

Crss

100

0.1 1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T = 150 C

= 25 C

°°

-V , Drain-to-Source Volta

e (V)

-I , Drain Current (A)I , Drain Current (A)

100us

1ms

10ms

020 40 60 80

Q , Total Gate Char

e (nC)

-V , Gate-to-Source Voltage (V)

I =

D-11A

V =-15V

V =-24V

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.01

0.1

100

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150

T , Case Temperature ( C)

-I , Drain Current (A)

VDS

VGS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

VDD

RGD.U.T.

90%

10%

d(on)

d(off)

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

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Fig 13. Typical On-Resistance Vs.

Drain Current

Fig 12. Typical On-Resistance Vs.

Gate Voltage

Fig 14b. Gate Charge Test Circuit

Fig 14a. Basic Gate Charge Waveform

Charge

D.U.T. V

-3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

2.0 4.0 6.0 8.0 10.0

-VGS, Gate -to -Source Voltage (V)

0.010

0.015

0.020

0.025

0.030

0.035

RDS(on), Drain-to -Source On Resistance ( Ω)

ID = -11A

0 102030405060

-ID , Drain Current (A)

0.010

0.015

0.020

0.025

0.030

RDS (on) , Drain-to-Source On Resistance ( Ω)

VGS = -10V

VGS = -4.5V

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Fig 15. Typical Vgs(th) Vs.

Junction Temperature Fig 16. Typical Power Vs. Time

0.001 0.010 0.100 1.000 10.000 100.000

Time (sec)

100

120

Power (W)

-75 -50 -25 0 25 50 75 100 125 150

TJ , Temperature ( °C )

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-VGS(th) Gate Threshold Voltage(V)

ID = -250µA

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SO-8 Package Details

SO-8 Part Marking

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BASIC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX MILLIMETERSINCHES MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BASIC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] C A B

e1 A

8X b

0.10 [.004]

4312

FOOTPRINT

8X 0. 72 [.02 8]

6.46 [.255]

3X 1. 27 [.05 0]

4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.

NOTES:

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLI NG DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBSTRATE.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

8X 1. 78 [.07 0]

EXAMPLE: THIS IS AN IRF7 10 1 (MOSFET)

INTERNATIONAL

RECTIFIER

LOGO

F7101

YWW

XXXX

PART NUMBER

LOT CODE

WW = WEEK

Y = LAST DIGIT OF THE YEAR

DATE CODE (YWW)

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33 0.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTRO LLING DIMEN SIO N : MILLIM ETER.

2. OU TL INE CO NFO RMS T O E IA -481 & EIA-541.

FEED DIRECTION

TERM INAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CO NTR OLLING DIM ENSION : M ILLIM ETER.

2. ALL DIM ENSIO NS ARE SHO WN IN MILLIM ETERS(INCHES).

3. O U TLIN E C ON FORM S T O EIA-4 81 & EIA-541.

Tape and Reel

Data and specifications subject to change without notice.

This product has been designed and qualified for the consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 3/01

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