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April 1st, 2010
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Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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BIPOLAR ANALOG INTEGRATED CIRCUIT
μ
PC4572
LOW SUPPLY VOLTAGE, ULTRA LOW-NOISE, HIGH SPEED, WIDE BAND,
LOW IB DUAL OPERATIONAL AMPLIFIER
DATA SHEET
Document No. G15972EJ6V0DS00 (6th edition)
Date Published December 2007 NS
Printed in Japan
1986
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The
μ
PC4572 is a dual wide band, ultra low noise operational amplifier designed for low supply voltage operation of +4 V
to +14 V single supply and ±2 V to ±7 V split supplies. Using high hFE PNP transistors for the input circuit, Input bias current
and input equivalent noise are better than conventional wide band operational amplifier.
The
μ
PC4572 is an excellent choice for preamplifiers and active filters in audio, instrumentation, and communication
circuit.
FEATURES
Ultra low noise: en = 4.0 nV/ Hz
Low input bias current: 100 nA
High slew rate: 6 V/
μ
s
Low supply voltage: ±2 V to ±7 V (Split)
+4 V to +14 V (Single)
Internal frequency compensation
ORDERING INFORMATION
Part Number Package
μ
PC4572C
μ
PC4572C(5)
8-pin plastic DIP (7.62 mm (300) )
8-pin plastic DIP (7.62 mm (300) )
μ
PC4572G2
μ
PC4572G2(5)
8-pin plastic SOP (5.72 mm (225) )
8-pin plastic SOP (5.72 mm (225) )
EQUIVALENT CIRCUIT (1/2 Circuit)
V+
I
I
I
N
Q
3
R
2
Q
1
Q
5
R
1
Q
2
Q
4
R
3
R
4
C
1
C
2
Q
6
R
6
Q
8
Q
7
Q
15
Q
9
Q
11
Q
12
Q
10
Q
14
Q
16
Q
17
R
7
R
8
R
10
R
11
OUT
V
Q
13
R
5
R
9
PIN CONFIGURATION (Top View)
OUT
1
I1
I
N1
I
V
1
2
3
4
8
7
6
5
V
OUT
2
I
I
+
I2
N2
1
+
2
+
μ
PC4572C, 4572C(5), 4572G2, 4572G2(5)
<R> <R>
Data Sheet G15972EJ6V0DS
2
μ
PC4572
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Ratings Unit
Voltage between V+ and V Note1 V+ V 0.3 to +15 V
Differential Input Voltage VID ±10 V
Input Voltage Note2 VI V0.3 to V+ + 0.3 V
Output Voltage Note3 VO V0.3 to V+ + 0.3 V
Power Dissipation C Package
Note4 350 mW
G2 Package
Note5
PT
440 mW
Output Short Circuit Duration Note6 ts 10 sec
Operating Ambient Temperature TA 20 to +80 °C
Storage Temperature Tstg 55 to +125 °C
Notes 1. Reverse connection of supply voltage can cause destruction.
2. The input voltage should be allowed to input without damage or destruction. Even during the transition
period of supply voltage, power on/off etc., this specification should be kept. The normal operation will
establish when the both inputs are within the Common Mode Input Voltage Range of electrical
characteristics.
3. This specification is the voltage, which should be allowed to supply to the output terminal from external
without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this
specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of
electrical characteristics.
4. Thermal derating factor is 5.0 mW/°C when ambient temperature is higher than 55°C.
5. Thermal derating factor is 4.4 mW/°C when ambient temperature is higher than 25°C.
6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and
Note 5.
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol MIN. TYP. MAX. Unit
Supply Voltage (Split) V± ±2 ±5 ±7 V
Supply Voltage (V = GND) V+ +4 +5/ +12 +14 V
Output Current IO ±10 mA
Capacitive Load (AV = +1) CL 100 pF
<R>
Data Sheet G15972EJ6V0DS 3
μ
PC4572
μ
PC4572C,
μ
PC4572G2
ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input Offset Voltage VIO RS 50 Ω ±0.3 ±5 mV
Input Offset Current Note7 IIO ±10 ±100 nA
Input Bias Current Note7 IB 100 400 nA
Large Signal Voltage Gain AV RL 2 kΩ , VO = ±2 V 10000 100000
Supply Current Note8 ICC IO = 0 A 4.5 7 mA
Common Mode Rejection Ratio CMR 70 90 dB
Supply Voltage Rejection Ratio SVR 70 85 dB
RL 10 kΩ ±3.3 ±3.7 Output Voltage Swing Vom
RL 2 kΩ ±3.0 ±3.5
V
Common Mode Input Voltage Range VICM ±3.5 ±4 V
Output Short Circuit Current IO short RL = 0 ±15 ±20 mA
Slew Rate SR AV = +1, RL 2 kΩ 3.5 6 V/
μ
s
Gain Band Width Product GBW fO = 100 kHz 10 16 MHz
Unity Gain Frequency funity open loop 9 MHz
Phase Margin φunity open loop 60 degree
Total Harmonic Distortion THD VO = 1 Vr.m.s., f = 20 Hz to 20 kHz
(Fig.1) 0.002 %
RIAA (Fig.2) 0.8 Input Equivalent Noise Voltage Vn
FLAT+JIS A, RS = 100 Ω (Fig.3) 0.5 0.65
μ
Vr.m.s.
fO = 10 Hz 4.5 Input Equivalent Noise Voltage Density en
fO = 1 kHz 4.0
nV/ Hz
Input Equivalent Noise Current Density in fO = 1 kHz 0.7 pA/ Hz
Channel Separation f = 20 Hz to 20 kHz 120 dB
Average VIO Temperature Drift
Δ
VIO/
Δ
T ±2
μ
V/°C
ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±5 V, V= GND)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input Offset Voltage VIO RS 50 Ω ±0.3 ±5 mV
Input Offset Current Note7 IIO ±10 ±100 nA
Input Bias Current Note7 IB 100 400 nA
Large Signal Voltage Gain AV RL 2 kΩ 8000 80000
Supply Current Note8 ICC IO = 0 A 4 6 mA
Common Mode Rejection Ratio CMR 60 75 dB
Supply Voltage Rejection Ratio SVR 60 70 dB
Output Voltage (High) VOH RL 2 kΩ (RL to 1/2 V+) 3.2 3.5 V
Output Voltage (Low) VOL RL 2 kΩ (RL to 1/2 V+) 1.3 1.6 V
Common Mode Input Voltage Range VICM 1.5 3.5 V
Slew Rate SR AV = +1 4 V/
μ
s
Gain Band Width Product GBW 12 MHz
Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.
8. This current flows irrespective of the existence of use.
<R>
Data Sheet G15972EJ6V0DS
4
μ
PC4572
μ
PC4572C(5),
μ
PC4572G2(5)
ELECTRICAL CHARACTERISTICS (TA = 25°C, V± = ±5 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input Offset Voltage VIO RS 50 Ω ±0.3 ±1.5 mV
Input Offset Current Note7 IIO ±10 ±50 nA
Input Bias Current Note7 IB 100 200 nA
Large Signal Voltage Gain AV RL 2 kΩ, VO = ±2 V 30000 100000
Supply Current Note8 ICC IO = 0 A 4.5 5.5 mA
Common Mode Rejection Ratio CMR 75 90 dB
Supply Voltage Rejection Ratio SVR 70 85 dB
RL 10 kΩ ±3.45 ±3.7 Output Voltage Swing Vom
RL 2 kΩ ±3.3 ±3.5
V
Common Mode Input Voltage Range VICM +3.8
3.7
±4 V
Output Short Circuit Current IO short RL = 0 ±15 ±20 mA
Slew Rate SR AV = +1, RL 2 kΩ 3.5 6 V/
μ
s
Gain Band Width Product GBW fO = 100 kHz 10 16 MHz
Unity Gain Frequency funity open loop 9 MHz
Phase Margin φunity open loop 60 degree
Total Harmonic Distortion THD VO = 1 Vr.m.s., f = 20 Hz to 20 kHz
(Figure1) 0.002 %
RIAA (Figure2) 0.8 Input Equivalent Noise Voltage Vn
FLAT+JIS A, RS = 100 Ω (Figure3) 0.5 0.65
μ
Vr.m.s.
fO = 10 Hz 4.5 Input Equivalent Noise Voltage Density en
fO = 1 kHz 4.0
nV/ Hz
Input Equivalent Noise Current Density in fO = 1 kHz 0.7 pA/ Hz
Channel Separation f = 20 Hz to 20 kHz 120 dB
Average VIO Temperature Drift
Δ
VIO/
Δ
T ±2
μ
V/°C
ELECTRICAL CHARACTERISTICS (TA = 25°C, V+ = +5 V, V = GND)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input Offset Voltage VIO RS 50 Ω ±0.3 ±1.5 mV
Input Offset Current Note7 IIO ±10 ±50 nA
Input Bias Current Note7 IB 100 200 nA
Large Signal Voltage Gain AV RL 2 kΩ , 40000 80000
Supply Current Note8 ICC IO = 0 A 4 5 mA
Common Mode Rejection Ratio CMR 65 75 dB
Supply Voltage Rejection Ratio SVR 60 70 dB
Output Voltage (High) VOH RL 2 kΩ (RL to 1/2 V+) 3.4 3.5 V
Output Voltage (Low) VOL RL 2 kΩ (RL to 1/2 V+) 1.3 1.45 V
Common Mode Input Voltage Range VICM 1.2 3.8 V
Slew Rate SR AV = +1 4 V/
μ
s
Gain Band Width Product GBW 12 MHz
Notes 7. Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.
8. This current flows irrespective of the existence of use.
<R>
Data Sheet G15972EJ6V0DS 5
μ
PC4572
MEASUREMENT CIRCUITS
VO = 1 Vr.m.s.
+2 kΩ
Fig. 1 Total Harmonic Distortion Measurement Circuit
330 kΩ
30 kΩ
2.2 kΩ
56 kΩ
610 Ω
V
O = (36.5 dB + 40 dB) × Vn
+
+
+
+
100 kΩ
8200 pF
2400 pF
V
O
76.5 dB
Vn =
LPF
(f
O
= 30 kHz)
33 F
47 F
1.5 F40 dB Amp.
μ
μ
μ
Fig. 2 Noise Measurement Circuit (RIAA)
10 kΩ
100 Ω
V
O
= 40 dB × V
n
+
JIS A
RS = 100 Ω
V
O
40 dB
V
n
=
Fig. 3 Flat Noize Measurement Circuit (FLAT + JIS A)
Data Sheet G15972EJ6V0DS
6
μ
PC4572
TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25°C, TYP.)
600
500
400
300
200
100
00 20406080100
POWER DISSIPATION
P
T
- Total Power Dissipation - mW
T
A
- Operating Ambient Temperature -
°
C
PC4572G2
PC4572C
μ
μ
200°C/W
227°C/W
100
120
80
60
40
20
01 10 1 k 100 k 1 M 10 M 100 10 k
OPEN LOOP FREQUENCY RESPONSE
A
V
- Open Loop Voltage Gain - dB
f - Frequency - Hz
V
±
=
±5
V
2
1.5
1
0.5
0
0.5
1
1.5
2
200 20406080
=
±
5 V
V
±
V
IO
- Input Offset Voltage - mV
INPUT OFFSET VOLTAGE
TA - Operating Ambient Temperature -
°C
each 5 samples data
200
180
160
140
120
100
80
60
40
20
0
20 0 20 40 60 80
=
±
5 V
V
±
I
B
- Input Bias Current - nA
INPUT BIAS CURRENT
TA - Operating Ambient Temperature -
°C
15
10
5
0
100 1 k 10 k 100 k 1 M
LARGE SIGNAL FREQUENCY RESPONSE
V
om
- Output Voltage Swing - V
p-p
f - Frequency - Hz
10 M
R
L
= 10 kΩ
V
±
=
±5
V V
±
=
±5
V
0
010 20 30 40
OUTPUT CURRENT LIMIT
V
O+
, I
O
SOURCE
V
O
, I
O
SINK
±3
±2
±1
±4
±5
V
O
±
- Output Voltage - V
I
O
- Output Current - mA
8
6
4
2
020
SUPPLY CURRENT
I
CC
- Supply Current - mA
T
A
- Operating Ambient Temperature -
°
C
20 0406080
V
±
=
±5
V
8
6
4
2
00
SUPPLY CURRENT
ICC - Supply Current - mA
V
±
-
Supply Voltage - V
±5±10
<R>
Data Sheet G15972EJ6V0DS 7
μ
PC4572
0
COMMON MODE INPUT VOLTAGE RANGE
V
ICM
- Common Mode Input Voltage Range - V
V
±
- Supply Voltage - V
10
5
0
5
10
±5±10
VO - Output Voltage - V
0
5
2.5
2.5
5
VOLTAGE FOLLOWER PULSE RESPONSE
86420
t - Time - s
μ
V
±
=
±5
V
A
V
= +1
R
L
= 2 kΩ
100
10
1
V
n
- Input Equivalent Noise Voltage - V
r.m.s.
μ
INPUT EQUIVALENT NOISE VOLTAGE (FLAT+JIS A)
10
R
S
- Source Resistance - Ω
100 k100 1 k 10 k
0.1
V
±
=
±5
V
e
n
-Input Equivalent Noise
Voltage Density - nV/ Hz
8
6
4
2
0
INPUT EQUIVALENT NOISE VOLTAGE DENSITY
f
-
Frequency
- Hz
10 100 k100 1 k 10 k
R
S
= 100 Ω
V
±
=
±5
V
THD - Total Harmonic Distortion - %
TOTAL HARMONIC DISTORTION
f - Frequency - Hz
1
0.1
0.01
0.001
0.0001 10 100 k100 1 k 10 k
V
±
=
±5
V
V
O
= 3 V
r.m.s.
A
V
= +1
R
L
= 2 kΩ
Data Sheet G15972EJ6V0DS
8
μ
PC4572
PACKAGE DRAWINGS (Unit: mm)
14
85
ITEM MILLIMETERS
NOTES
1. Each lead centerline is located within 0.25 mm of
its true position (T.P.) at maximum material condition.
P8C-100-300B,C-2
N 0.25
P 0.9 MIN.
R015°
A 10.16 MAX.
B 1.27 MAX.
F 1.4 MIN.
G 3.2±0.3
J 5.08 MAX.
K 7.62 (T.P.)
C 2.54 (T.P.)
D 0.50±0.10
H 0.51 MIN.
I 4.31 MAX.
L 6.4
M 0.25+0.10
0.05
2. ltem "K" to center of leads when formed parallel.
M
A
R
M
P
I
J
H
G
F
DN
C
B
8-PIN PLASTIC DIP (7.62mm(300))
L
K
<R>
Data Sheet G15972EJ6V0DS 9
μ
PC4572
ITEM
B
C
I
8-PIN PLASTIC SOP (5.72 mm (225))
D
E
F
G
H
J
P
MILLIMETERS
1.27 (T.P.)
0.78 MAX.
4.4±0.15
0.1±0.1
0.42
1.59±0.21
6.5±0.3
1.49
+0.08
0.07
1.1±0.2
3°+7°
3°
NOTE
Each lead centerline is located within 0.12 mm of
its true position (T.P.) at maximum material condition. A 5.2 +0.17
0.20
K
L
M
N
0.6±0.2
0.17
0.12
0.10
+0.08
0.07
S8GM-50-225B-6
85
14
S
M
C
detail of lead end
A
M
SN
F
G
B
E
D
P
H
IJ
K
L
Data Sheet G15972EJ6V0DS
10
μ
PC4572
RECOMMENDED SOLDERING CONDITIONS
The
μ
PC4572 should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, contact an NEC Electronics sales
representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Type of Surface Mount Device
μ
PC4572G2, 4572G2(5): 8-pin plastic SOP (5.72 mm (225) )
Process Conditions Symbol
Infrared Ray Reflow Peak temperature: 230°C or below (Package surface temperature),
Reflow time: 30 seconds or less (at 210°C or higher),
Maximum number of reflow processes: 1 time.
IR30-00-1
Vapor Phase Soldering Peak temperature: 215°C or below (Package surface temperature),
Reflow time: 40 seconds or less (at 200°C or higher),
Maximum number of reflow processes: 1 time.
VP15-00-1
Wave Soldering Solder temperature: 260°C or below, Flow time: 10 seconds or less,
Maximum number of flow processes: 1 time,
Pre-heating temperature: 120°C or below (Package surface temperature).
WS60-00-1
Partial Heating Method Pin temperature: 300°C or below,
Heat time: 3 seconds or less (Per each side of the device).
Caution Apply only one kind of soldering condition to a device, except for "partial heating method", or the
device will be damaged by heat stress.
Type of Through-hole Device
μ
PC4572C, 4572C(5): 8-pin plastic DIP (7.62 mm (300) )
Process Conditions
Wave Soldering
(only to leads)
Solder temperature: 260°C or below,
Flow time: 10 seconds or less.
Partial Heating Method Pin temperature: 300°C or below,
Heat time: 3 seconds or less (per each lead).
Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that
the package body does not get jet soldered.
REFERENCE DOCUMENTS
QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES C11531E
SEMICONDUCTOR DEVICE MOUNT MANUAL http://www.necel.com/pkg/en/mount/index.html
NEC SEMICONDUCTOR DEVICE RELIABILITY/
QUALITY CONTROL SYSTEM- STANDARD LINEAR IC
IEI-1212
<R>
<R>
μ
PC4572
The information in this document is current as of December, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
M8E 02. 11-1
(1)
(2)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
"Standard":
"Special":
"Specific":