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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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LINEAR & POWER AMPLIFIERS - SMT
HMC457QS16G / 457QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v03.0907
General Description
Features
Functional Diagram
The HMC457QS16G & HMC457QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1 watt MMIC power ampli ers
operating between 1.7 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the ampli er
gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB
from 2.0 to 2.2 GHz. Utilizing a minimum number of
external components, the ampli er output IP3 can
be optimized to +45 dBm. The power control (Vpd)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE make
the HMC457QS16G & HMC457QS16GE ideal power
ampli ers for Cellular/3G base station & repeater
applications.
Output IP3: +46 dBm
Gain: 27 dB @ 1900 MHz
48% PAE @ +32 dBm Pout
+25 dBm W-CDMA Channel Power
@ -50 dBc ACPR
Integrated Power Control (Vpd)
QSOP16G SMT Package: 29.4 mm2
Included in the HMC-DK002 Designer’s Kit
Electrical Speci cations, TA = +25°C, Vs= +5V, Vpd = +5V, Vbias = +5V [1]
Typical Applications
The HMC457QS16G / HMC457QS16GE is ideal for
applications requiring a high dynamic range ampli er:
• CDMA & W-CDMA
• GSM, GPRS & Edge
• Base Stations & Repeaters
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 1710 - 1990 2010 - 2170 MHz
Gain 24 27 22 25 dB
Gain Variation Over Temperature 0.025 0.035 0.025 0.035 dB / °C
Inp ut Ret urn Lo ss 11 11 dB
Output Return Loss 8 5 dB
Output Power for 1dB Compression (P1dB) 26 29 27.5 30.5 dBm
Saturated Output Power (Psat) 32.5 32 dBm
Output Third Order Intercept (IP3) [2] 42 45 42 45 dBm
Noise Figure 6 5 dB
Supply Current (Icq) 500 500 mA
Control Current (Ipd) 4 4 mA
Bias Current (Vbias) 10 10 mA
[1] Speci cations and data re ect HMC457QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone output power of +15 dBm per tone, 1 MHz spacing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Input Return Loss
vs. Temperature @ 1900 MHz
Output Return Loss
vs. Temperature @ 1900 MHz
Broadband Gain
& Return Loss @ 1900 MHz Gain vs. Temperature @ 1900 MHz
-20
-15
-10
-5
0
5
10
15
20
25
30
1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
26
28
30
1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-15
-12
-9
-6
-3
0
1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
PldB vs. Temperature @ 1900 MHz Psat vs. Temperature @ 1900 MHz
20
22
24
26
28
30
32
34
1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
34
1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
HMC457QS16G / 457QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v03.0907
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 242
LINEAR & POWER AMPLIFIERS - SMT
Output IP3 vs. Temperature @ 1900 MHz
Gain, Power & IP3
vs. Supply Current @ 1900 MHz*
Gain, Power & IP3
vs. Supply Voltage @ 1900 MHz
Power Compression @ 1900 MHz
* Icq is controlled by varying Vpd.
Noise Figure vs.
Temperature @ 1900 MHz
ACPR vs. Supply Voltage @ 1960 MHz
CDMA 2000, 9 Channels Forward
34
36
38
40
42
44
46
48
50
1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
1.6 1.7 1.8 1.9 2 2.1
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
5
10
15
20
25
30
35
40
45
50
4.5 4.75 5 5.25 5.5
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Vs (Vdc)
5
10
15
20
25
30
35
40
45
50
440 480 520 560 600
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Icq (mA)
5V
-90
-80
-70
-60
-50
-40
-30
12 14 16 18 20 22 24 26 28
ACPR (dBc)
Channel Power (dBm)
Source ACPR
CDMA2000
Frequency: 1.96 GHz
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
5.5V
4.5V
0
5
10
15
20
25
30
35
40
45
50
-10 -8 -6 -4 -2 0 2 4 6 8 10 12
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
HMC457QS16G / 457QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v03.0907
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Gain vs. Temperature @ 2100 MHz
Output Return Loss
vs. Temperature @ 2100 MHz
Input Return Loss
vs. Temperature @ 2100 MHz
Broadband Gain
and Return Loss @ 2100 MHz
-20
-15
-10
-5
0
5
10
15
20
25
30
1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
S11
S21
S22
RESPONSE (dB)
FREQUENCY (GHz)
14
16
18
20
22
24
26
28
30
1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-10
-8
-6
-4
-2
0
1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
Psat vs. Temperature @ 2100 MHzPldB vs. Temperature @ 2100 MHz
20
22
24
26
28
30
32
34
1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
20
22
24
26
28
30
32
34
1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
HMC457QS16G / 457QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v03.0907
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 244
LINEAR & POWER AMPLIFIERS - SMT
Output IP3
vs. Temperature @ 2100 MHz
Gain, Power & IP3
vs. Supply Current @ 2100 MHz*
Gain, Power & IP3
vs. Supply Voltage @ 2100 MHz
Noise Figure
vs. Temperature @ 2100 MHz
0
1
2
3
4
5
6
7
8
9
10
1.9 2 2.1 2.2 2.3
+25 C
+85 C
-40 C
NOISE FIGURE (dB)
FREQUENCY (GHz)
5
10
15
20
25
30
35
40
45
50
4.5 4.75 5 5.25 5.5
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Vs (Vdc)
5
10
15
20
25
30
35
40
45
50
440 480 520 560 600
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Icq (mA)
*Icq is controlled by varying Vpd
Power Compression @ 2100 MHz
ACPR vs. Supply Voltage @ 2140 MHz
W-CDMA, 64 DPCH (Uplink)
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
12 14 16 18 20 22 24 26 28
ACPR (dBc)
Channel Power (dBm)
Source ACPR
W-CDMA
Frequency: 2.14 GHz
Integration BW: 3.84 MHz
64 DPCH
5V
4.5V
5.5V
0
5
10
15
20
25
30
35
40
45
50
-10 -8 -6 -4 -2 0 2 4 6 8 10 12
Pout (dBm)
Gain (dB)
PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
34
36
38
40
42
44
46
48
50
1.9 1.95 2 2.05 2.1 2.15 2.2 2.25 2.3
+25 C
+85 C
-40 C
OIP3 (dBm)
FREQUENCY (GHz)
HMC457QS16G / 457QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v03.0907
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +6 Vdc
Control Voltage (Vpd) +5.4 Vdc
RF Input Power (RFIN)(Vs = Vpd = +5 Vdc) +15 dBm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 42.9 mW/°C above 85 °C) 2.78 W
Thermal Resistance
(junction to ground paddle) 23.3 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
Power Dissipation
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-10-8-6-4-20246810
POWER DISSIPATION (W)
INPUT POWER (dBm)
Max Pdiss @ +85C
2100 MHz
1900 MHz
Vs (V) Icq (mA)
4.5 400
5.0 510
5.5 620
Typical Supply Current
vs. Supply Voltage
HMC457QS16G / 457QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v03.0907
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
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LINEAR & POWER AMPLIFIERS - SMT
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
HMC457QS16G / 457QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v03.0907
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC457QS16G Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H457
XXXX
HMC457QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H457
XXXX
[1] Max peak re ow temperature of 235 °C
[2] Max peak re ow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
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Pin Number Function Description Interface Schematic
1 Vcc
Power supply voltage for the rst ampli er stage. External
bypass capacitors are required as shown in the application
schematic.
2, 4, 5, 7,
9, 16 GND
Ground: Backside of package has exposed metal ground
slug that must also be connected to RF/DC ground.
Vias under the device are required.
3 Vbias Power Supply for Bias Circuit
6 RFIN This pin is AC coupled
and matched to 50 Ohms
8 Vpd
Power control pin. For maximum power, this pin should be
connected to +5V. A higher voltage is not recommended. For
lower idle current, this voltage can be reduced.
10 - 15 RFOUT RF output and DC bias for the output stage.
Pin Descriptions
HMC457QS16G / 457QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v03.0907
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
11 - 248
LINEAR & POWER AMPLIFIERS - SMT
1900 & 2100 MHz Application Circuit
Recommended
Component Values 1900 MHz 2100 MHz
C1 - C4 100 pF 100 pF
C5, C6 1000 pF 1000 pF
C7 2.2 μF 2.2 μF
C8 33 pF 33 pF
C9 3.9 pF 2.7 pF
L1, L2 3.9 nH 3.9 nH
R1 160 Ohm 160 Ohm
TL1 TL2
Impedance 50 Ohm 50 Ohm
Physical Length 0.170” 0.080”
Electrical Length 20° 9°
PCB Material: 10 mil Rogers 4350, Er = 3.48
This circuit was used to specify the performance for 1900 & 2100 MHz operation. Contact the HMC Applications
Group for assistance in optimizing performance for your application.
HMC457QS16G / 457QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v03.0907
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 249
Evaluation PCB
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used
to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for Evaluation PCB 106043-1900, 110171-2100 [1]
Item Description
J1, J2 PCB Mount SMA Connector
J3, J4 2 mm DC Header
C1 - C4 100 pF Capacitor, 0402 Pkg.
C5, C6 1000 pF Capacitor, 0603 Pkg.
C7 2.2 μF Capacitor, Tantalum
C8 33 pF Capacitor, 0402 Pkg.
C9 3.9 pF Capacitor, 0603 Pkg. - 1900 MHz
C9 2.7 pF Capacitor, 0603 Pkg. - 2100 MHz
L1, L2 3.9 nH Inductor, 0603 Pkg.
R1 160 Ohm Resistor, 0603 Pkg.
U1 HMC457QS16G / HMC457QS16GE
PCB [2] 109585 Evaluation PCB, 10 mils
[1] Reference one of these numbers when ordering complete
evaluation PCB depending on frequency of operation.
[2] Circuit Board Material: Rogers 4350, Er = 3.48
HMC457QS16G / 457QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 1.7 - 2.2 GHz
v03.0907
