Sep.2000
RTC
RTC
CIRCUIT DIAGRAM
C2E1
E2 C1
G2E2
E1
G1
CM
G1E1 E2G2
C2E1 C1
E2
27
24
24
94
16 16
2.5
21.2 7.5
2.5
25
7
17 23
24
114418
13
48
23 4
12 13.5
80
±0.25
2–φ6.5
MOUNTING HOLES
3–M5NUTS
12mm deep TAB #110. t=0.5
30
+1
–0.5
LABEL
Tc measured point
CM100DU-24F
APPLICATION
General purpose inver ters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM100DU-24F
HIGH POWER SWITCHING USE
¡IC...................................................................100A
¡VCES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Sep.2000
VCE = VCES, VGE = 0V
VGE = VCES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 600V, IC = 100A, VGE = 15V
VCC = 600V, IC = 100A
VGE1 = VGE2 = 15V
RG = 3.1Ω, Inductive load switching operation
IE = 100A
IE = 100A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound applied*2 (1/2 module)
Tc measured point is just under the chips
IC = 10mA, VCE = 10V
IC = 100A, VGE = 15V
VCE = 10V
VGE = 0V
1200
±20
100
200
100
200
500
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
MITSUBISHI IGBT MODULES
CM100DU-24F
HIGH POWER SWITCHING USE
V
V
A
A
A
A
W
°C
°C
V
N • m
N • m
g
1
20
2.4
—
39
1.7
1.0
—
100
50
400
300
150
—
3.2
0.25
0.35
—
0.18*3
31
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
°C/W
Ω
—
—
1.8
1.9
—
—
—
1100
—
—
—
—
—
4.1
—
—
—
0.07
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.1
6V
V
57
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance*1
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Symbol Parameter
VGE(th)
VCE(sat)
Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
TC = 25°C
Pulse (Note 2)
TC = 25°C
Pulse (Note 2)
TC = 25°C
Charged part to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value
Symbol Parameter
Collector current
Emitter current
Torque strength
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
Tj
Tstg
Viso
—
Unit
Typ.
Limits
Min. Max.
—
Test conditions
MAXIMUM RATINGS (Tj = 25°C)
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
Sep.2000
MITSUBISHI IGBT MODULES
CM100DU-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
V
GE
= 20V
T
j
= 25°C
15
11
10
9.5
9
8.5
8
200
100
180
160
140
120
80
60
40
20
00 0.5 1 1.5 2 2.5 3 3.5 4
3
2.5
2
1.5
0.5
1
00 120 16040 80 200
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
100
101
102
103
2
3
5
7
2
3
5
7
2
3
5
7
0.5 1 1.5 2 2.5 3 3.5
T
j
= 25°C
5
4
3
2
1
0206 8 12 1610 14 18
I
C
= 200A
I
C
= 100A
I
C
= 40A
T
j
= 25°C
10–1
10–1
0
C
res
101102
57
103
23 57
101
2
3
5
7
102
2
3
5
7
103
2
3
5
7
100
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 125
°C
Inductive load
23
t
d(off)
t
d(on)
t
f
t
r
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR CURRENT IC (A)
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(A)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE Cies, Coes, Cres (nF)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
SWITCHING TIMES (ns)
COLLECTOR CURRENT IC (A)
Sep.2000
MITSUBISHI IGBT MODULES
CM100DU-24F
HIGH POWER SWITCHING USE
10
0
10
1
23 57
10
2
23 57
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
rr
I
rr
0
6
4
2
10
8
16
14
12
20
18
0 500 15001000
V
CC
= 400V
V
CC
= 600V
I
C
= 100A
10
1
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
Single Pulse
T
C
= 25°C
Conditions:
V
CC
= 600V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 25
°C
Inductive load
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(°C/W)
TMIE (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
IGBT part:
Per unit base = R
th(j–c)
= 0.25°C/W
FWDi part:
Per unit base = R
th(j–c)
= 0.35°C/W
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
