2011-07-18
1
BAR63...
Silicon PIN Diodes
• PIN diode for high speed
switching of RF signals
• Very low forward resistance (low insertion loss)
• Very low capacitance (high isolation)
• For frequencies up to 3GHz
• Pb-free (RoHS compliant) package
• Qualified according AEC Q1011)
BAR63-06
BAR63-06W
BAR63-05
BAR63-05W
BAR63-02..
BAR63-03W
BAR63-04
BAR63-04W
!
,
,
!
,
,
!
,
,
Type Package Configuration LS(nH) Marking
BAR63-02L*
BAR63-02V
BAR63-02W
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
TSLP-2-1
SC79
SCD80
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
single, leadless
single
single
single
series
series
common cathode
common cathode
common anode
common anode
0.4
0.6
0.6
1.8
1.8
1.4
1.8
1.4
1.8
1.4
G
G
GG
white G
G4s
G4s
G5s
G5s
G6s
G6s
1*BAR63-02L is not qualified according AEC Q101
2011-07-18
2
BAR63...
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR50 V
Forward current IF100 mA
Total power dissipation
BAR63-02L, TS ≤ 118°C
BAR63-02V, -02W, BAR63-03W, TS ≤ 115°C
BAR63-04...BAR63-06, TS ≤ 55°C
BAR63-04S, TS ≤ 115°C
BAR63-04W...BAR63-06W, TS ≤ 105°C
Ptot
250
250
250
250
250
mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 125
Storage temperature Tst
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BAR63-02L
BAR63-02V, BAR63-02W
BAR63-03W
BAR63-04...BAR63-06
BAR63-04S
BAR63-04W...BAR63-06W
RthJS
≤ 125
≤ 140
≤ 155
≤ 380
≤ 180
≤ 180
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 5 µA
V(BR) 50 - - V
Reverse current
VR = 35 V
IR- - 10 nA
Forward voltage
IF = 100 mA
VF- 0.95 1.2 V
1For calculation of RthJA please refer to the Technical Information
2011-07-18
3
BAR63...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Diode capacitance
VR = 5 V, f = 1 MHz
VR = 0 V, 100 MHz ... 1.8 GHz
CT
-
-
0.21
0.3
0.3
-
pF
Reverse parallel resistance
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
RP
-
-
-
500
15
5
-
-
-
kΩ
Forward resistance
IF = 5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
-
-
1.2
1
2
-
Ω
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 Ω
τ rr - 75 - ns
I-region width WI- 4.5 - µm
Insertion loss1)
IF = 1 mA, f = 1.8 GHz
IF = 5 mA, f = 1.8 GHz
IF = 10 mA, f = 1.8 GHz
IL
-
-
-
0.15
0.11
0.1
-
-
-
dB
Isolation1)
VR = 0 V, f = 0.9 GHz
VR = 0 V, f = 1.8 GHz
VR = 0 V, f = 2.45 GHz
ISO
-
-
-
17.9
12.3
10
-
-
-
Series inductance LS- - -
1BAR63-02L in series configuration, Z = 50Ω
2011-07-18
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BAR63...
Diode capacitance CT = ƒ (VR)
f = 1MHz - 1.8GHz
V
EHD07139
R
T
C
00V
pF
0.1
0.2
0.3
0.4
0.5
10 20 30
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
0 5 10 15 20 V30
VR
-1
10
0
10
1
10
2
10
3
10
KOhm
Rp
100 MHz
1 GHz
1.8 GHz
Forward resistance rf = ƒ (IF)
f = 100MHz
Ι
EHD07138
F
f
rΩ
10 -2
-1
10 mA
10 -1 10 010 110 2
10 2
10 0
10 1
Forward current IF = ƒ (VF)
TA = Parameter
mA
0.3
Ι
F
F
EHD07171
V
BAR 63...
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
0.5 0.8 1 V 1.2
40
25 ˚C
85 ˚C
˚C
2011-07-18
5
BAR63...
Forward current IF = ƒ (TS)
BAR63-04...BAR63-06
0 15 30 45 60 75 90 105 120 °C 150
TS
0
20
40
60
80
mA
120
IF
Forward current IF = ƒ (TS)
BAR63-03W
0 15 30 45 60 75 90 105 120 °C 150
TS
0
20
40
60
80
mA
120
IF
Forward current IF = ƒ (TS)
BAR63-02V, BAR63-02W
0 15 30 45 60 75 90 105 120 °C 150
TS
0
20
40
60
80
mA
120
IF
Forward current IF = ƒ (TS)
BAR63-04W...BAR63-06W
0 15 30 45 60 75 90 105 120 °C 150
TS
0
20
40
60
80
mA
120
IF
2011-07-18
6
BAR63...
Permissible Puls Load RthJS = ƒ (tp)
BAR63-04...BAR63-06
t
EHB07146
P
10
-6
10
-5
10
-4
10
-3
10
-2
s10
0
5
T
t
P
D=t
P
T
10
0
1
10
2
10 D=
0.5
0.2
0.1
0.05
0.05
0.01
0.005
0
R
thJS
5
5
K/W
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR63-04...BAR63-06
t
EHB07147
P
F
10
-6
10
-5
10
-4
10
-3
10
-2
s10
0
T
t
P
D=t
P
T
10
0
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Ι
max
DC
Ι
F
1
10
5
5
10
2
Permissible Puls Load RthJS = ƒ (tp)
BAR63-02V, BAR63-02W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR63-02V, BAR63-02W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
-
IFmax/ IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2011-07-18
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BAR63...
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR63-03W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
-
IFmax/ IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
BAR63-03W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR63-04W...BAR63-06W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
IFmax/ IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
BAR63-04W...BAR63-06W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
2011-07-18
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BAR63...
Isolation ISO = -|S21|2 = ƒ(f)
VR = Paramter
BAR63-02L in series configuration, Z = 50Ω
01234GHz 6
f
-30
-25
-20
-15
-10
dB
0
|S21|²
0 V
1 V
10 V
Insertion loss IL = -|S21|2 = ƒ(f)
IF = Parameter
BAR63-02L in series configuration, Z = 50Ω
01234GHz 6
f
-0.4
-0.3
-0.2
dB
0
|S21|²
1 mA
5 mA
10 mA
2011-07-18
9
BAR63...
Package SC79
2011-07-18
10
BAR63...
Package SCD80
Package Outline
Foot Print
Marking Layout (Example)
±0.1
1.7
0.3
1
2
marking
Cathode
0.8
±0.1
10
˚
MAX.
±0.1
0.7
±0.1
1.3 7
˚
0.13
±0.05
+0.05
-0.03
±1.5
˚
0.2
M
A
A
±0.05
0.2
0.35
0.35
1.45
BAR63-02W
Type code
Cathode marking
Laser marking
0.7
20.2
0.9
0.4
8
4
1.45
2.5
Standard Reel with 2 mm Pitch
Cathode
marking
Cathode
marking
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch)
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code
2011-07-18
11
BAR63...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC751)) CES-Code
1) New Marking Layout for SC75, implemented at October 2005.
.
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
01apAPapAPapAP
02bqBQbqBQbqBQ
03crCRcrCRcrCR
04dsDSdsDSdsDS
05et ETet ETet ET
06fuFUfuFUfuFU
07gvGVgvGVgvGV
08hxHXhxHXhxHX
09jyJYjyJYjyJY
10kzKZkzKZkzKZ
11l 2L4l 2L4l 2L4
12n3N5n3N5n3N5
2011-07-18
12
BAR63...
Package SOD323
2011-07-18
13
BAR63...
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25
M
BC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2011-07-18
14
BAR63...
Package SOT323
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3+0.1
±0.1
0.9
12
3
A
±0.2
2
-0.05
0.650.65
M
3x
0.1
0.1 MIN.
0.1
M
0.2 A
0.2
4
2.15 1.1
8
2.3
Pin 1
Pin 1
2005, June
Date code (YM)
BCR108W
Type code
0.6
0.8
1.6
0.65
0.65
Manufacturer
2011-07-18
15
BAR63...
Package TSLP-2-1
2011-07-18
16
BAR63...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.