BOE D MM 8235605 0045880 lee MBSIEG SIEMENS IGBT Module Preliminary Data Vor = 1200 V Ig =2x135Aat To=25'C I, =2x100 Aat T, = 80C @ Power module @ Haif-bridge/Chopper @ Including fast free-wheel diodes @ Package with insulated metal base plate @ Package outlines/Circuit diagram: 5a, 5b STEMENS AKTIENGESELLSCHAF 7-23-09 BSM 100 GB 120 D BSM 100 GAL 120 D Half-bridge Chopper Type Ordering Code Type Ordering Code BSM 100 GB 120 D C67076-A2107-A2 BSM 100 GAL 120 D C67076-A2012-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Vor 1200 v Collector-gate voltage, Ree = 20 kQ Voaa 1200 Gate-emitter voltage Vee +20 Continuous collector current, T, = 25 C Io 135 A Ty = 80C 100 Pulsed collector current, Ty = 25C To puis 270 Tc = 80 C 200 Operating and storage temperature range T), Teg - 65... + 150 c Power dissipation, T, = 25 C Prot 1000 Ww Thermal resistance, chip-case Rec 0.13 KAW Insulation test voltage), = 1 min. Vis 2500 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F - IEC climatic category, DIN IEC 68-1 - 56/150/56 1 See chapter Package Outline and Circuit Diagrams. 2) Insulation test voltage between collector and metal base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1. Semiconductor Group 244BOE D M@ 4235605 00458461 0695 MSIEG SIEMENS SIEMENS AKTIENGESELLSCHAF Electrical Characteristics at T| = 25 C, unless otherwise specified. BSM 100 GB 120 D BSM 100 GAL 120 D Parameter Symbol Values Unit min. | typ. | max. Static Characteristics Collector-emitter breakdown voltage Vee =0, = 2mA Viemoes 1200 Gate threshold voltage Vee = Voe, 4 = 8 mA Veen) 4.8 5.5 6.2 Collector-emitter saturation voltage Vee = 15 V, L = 100A T, =25C T, =150C Voe(eat) 2.8 3.3 4.0 4.5 Zero gate voltage collector current Voge = 1200 V, Vee = 0 T, =25C T, =125C hes nA - 2000 Gate-emitter leakage current Vee = 20 V, Vog = 0 Ioes nA ~ 100 AC Characteristics Forward transconductance Voce =20V,i,=100A Sts 36 Input capacitance Vow = 25 V, Vee = 0, f= 1 MHz Crs 16000 | - pF Output capacitance, Ves = 0 Voe =25 V, Voce = 0,f = 1 MHz Coss 1300 - Reverse transfer capacitance Vee = 25 V, Vee = 0, f= 1 MHz Css 500 - Semiconductor Group 245bOE D M@ 8235605 0045882 SIEMENS TTS MBSIEG BSM 100 GB 120 D BSM 100 GAL 120 D SIEMENS AKTIENGESELLSCHAF Switching Characteristics at T, = 125 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. Resistive Load Turn-on delay time ta (on) ns Voc = 600 V, Voe = 15 V, k= 100 A Rg on = 3-3 Q, Rg on) = 3.3. Q 100 180 220 Rise time t, Veco = 600 V, Veg = 15 V, L = 100A Rg fon = 3-3 Q, Rg on) = 3.3 Q - 450 - Turn-off delay time fg (ott) Voc = 600 V, Vee = 15 V, 5 = 100A Ry fon) = 3-3 Q, Rg ory = 3.3. Q - 550 - Fall time tr Voc = 600 V, Vag = 15 V, = 100A Rg on) = 3-3 .Q, Rg on = 9.3 Q - 500 - Inductive Load Turn-on delay time 4 fon) ns Voc = 600 V, Veg = 15 V, = 100A Rg ton = 3-3 Q, Rg oy = 3.3.2 100 180 220 Rise time t, Vocg = 600 V, Vag = 15 V, = 100A Rg con) = 3-3 Q, Rg on) = 3.3. Q 28 56 85 Turn-off delay time ta (ot Voc = 600 V, Vag = 15 V, = 100A Rg ton = 3.3 Q, Rg on) = 3.3. Q 410 550 660 Fall time te Voo = 600 V, Veg = 15.V, lp = 100A Ry (on) = 3.3 Q, Rg (on) = 3.3. Q 60 85 110 Turn-off loss (Foy = Eons + Eon2) Eo - 6 - mWs Voc = 600 V, Voe = 15 Vv, l=100A Fate _ 5 _ Rg fon = 3-3 Q, Rg or) = 3.3 Q Semiconductor Group 246bOE D MM 48235605 0045843 931 MBSIEG SIEM BSM 100 GB 120 D ENS BSM 100 GAL 120 D SIEMENS AKTIENGESELLSCHAF Electrical Characteristics at T, = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. max. Free-Wheel Diode Diode forward voltage Ve Vv i =100 A, Vee =0 T, =25 - 2.45 - T, =125C - 1.9 - Reverse recovery time br us & =100A, V_ = 600 V Voe = 0, dip/dt = - 1500 A/us T, =125C - 0.3 - Reverse recovery charge Ow uC k& =100A, Vp, =600V Vor = 0, di-/dt = - 1500 A/us T, =25 - 6 - T, =125 - 18 - Soft factor S - & =100A, Vp=600V Vee = 0, di-/dt = 1500 A/ps T, =125C - 1 - Thermal resistance Rasc - - 0.5 K/AV Chip-case Semiconductor Group 247bOE D MM 8235605 0045884 878 MESIEG SIEM BSM 100 GB 120 D ENS BSM 100 GAL 120 D SIEMENS AKTIENGESELLSCHAF Characteristics at T, = 25 C, unless otherwise specified. Power dissipation P,,, = f (Tc) Safe operating area /, =f (Vce) parameter: 7, = 150 C parameter: single pulse, T, = 25 C T, < 150 C 1200 $1100042 Sui00090 W Prot 1000 800 600 400 200 0 0 2 40 60 80 100 120 C 160 q Typ. output characteristics /, = f (Vcc) Typ. output characteristics /, = f (Ve) parameter: /, = 80 us, T,< 25 C parameter: , = 80 us, T,< 125 C 51100243 - S1100244 200 00 A Vog= 20 2 A Vog= 20V 18V 18V ] 16V 16V c 15V Io 15V 160 14V 160 144 12V 12V 10V 10V 120 120 80 80 40 0 1 2 3 4 V 5 oo Mee Semiconductor Group 248BOE D WMH 46235605 00458465 704 MBSIEG SIEMENS BSM 100 GB 120 D BSM 100 GAL 120 D SIEMENS AKTIENGESELLSCHAF Reverse biased safe operating area Jo =f (Voc), parameter: T, = 125 C, Voe = 15 Vv, Roost = 3.3 Q, L (parastic inductance, module) < 50 nH SH100402 0 500 1000 4500 oe ee Transient thermal impedance Zinc =f (to), parameter: D = 1,/T Sh00049 1 i op ye 19 s 10! et, Semiconductor Group Safe operating area, short circuit /, =f (Voc), Vee = 415 V T,< 150 C, tse $ 10 ps, Lb < 50 nH - SI100206 12 Jon Tego 1 8 6 4 779 Cl Note: Vor Allowed numbers of 2b G short circuit:< 1000 E Time between short E circuit:>1s ot | | 0 200 400 600 800 1000 1200 V 1400 ~ Ver Typ. on-state characteristics Voe (say = f (Vee), parameter: Je, T, $1100046 12 v Veetsot) ma T=25C 10 7,2 150C 249LOE D @M@ 8235605 GO4586b 640 MBSIEG SIEMENS BSM 100 GB 120 D BSM 100 GAL 120 D SIEMENS AKTIENGESELLSCHAF Collector current /, = 7 (Tc) parameter: Voge 2 15 V, 7, = 150C Sn00d47 Typ. transfer characteristics /, = f (Vcc) parameter: t, = 80 us, Voe = 20 V - $1100045 200 A f 100 Vv 20 Yee Semiconductor Group Typ. capacitances C = f (Vcc) parameter: Vge = 0, f= 1 MHz $1100048 10? nF 5 y 10 10 0 10 20 30 VC 40 ~ Ve Typ. gate charge Vor, Vee =f (Qa) sllo0247 0 1000 2 y Ue V toe B00 | Yee | 56 600 : 1 12 400 1 8 200 -} |g i \ 0 0 0 400 800 +=: 1200 nC 1600 - 0, 250BOE D MM 8235605 0045847 SA? MESIEG 1EM BSM 100 GB 120 D Ss ENS BSM 100 GAL 120 D SIEMENS AKTIENGESELLSCHAF Forward characteristics of fast recovery reverse diode /, =f (V-) parameter: T, St100250 200 A I, 150 100 50 0 Typ. switching time = f (Rg) Typ. switching time = f (/,) Inductive load, parameter: 7, = 125 C Inductive load, parameter: T, = 125 C Voe = 600 V, Veg = 415 V, 10 = 100A Vee = 600 V, Voz = 415 V, Rg = 5.62 { o S1l00245 ' 9 . S$1100246 ; 5 } 4 fa(ott) | 19 5 fa(on) 10"! h 107! 5 5 107 1072 10 0 20 40 60 80 A 100 _~ } c Semiconductor Group 251