CMSD2004S
SURFACE MOUNT
DUAL, IN SERIES
SILICON SWITCHING DIODES
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMSD2004S
type is a dual, in series silicon switching diode
manufactured by the epitaxial planar process, designed
for applications requiring high voltage capability.
MARKING CODE: B6D
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Continuous Reverse Voltage VR 300 V
Peak Repetitive Reverse Voltage VRRM 300 V
Peak Repetitive Reverse Current IRRM 200 mA
Continuous Forward Current IF 225 mA
Peak Repetitive Forward Current IFRM 625 mA
Peak Forward Surge Current, tp=1.0μs IFSM 4.0 A
Peak Forward Surge Current, tp=1.0s IFSM 1.0 A
Power Dissipation PD 275 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 455 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR V
R=240V 100 nA
IR V
R=240V, TA=150°C 100 μA
BVR I
R=100μA 300 V
VF I
F=100mA 1.0 V
CT V
R=0, f=1.0MHz 5.0 pF
trr I
F=IR=30mA, Irr=3.0mA, RL=100Ω 50 ns
SOT-323 CASE
R6 (8-February 2010)
www.centralsemi.com
CMSD2004S
SURFACE MOUNT
DUAL, IN SERIES
SILICON SWITCHING DIODES
SOT-323 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
MARKING CODE: B6D
PIN CONFIGURATION
www.centralsemi.com
R6 (8-February 2010)
