IPD90P04P4L-04
OptiMOS®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current1) IDTC=25°C,
VGS=-10V -90 A
TC=100°C,
VGS=-10V2) -90
Pulsed drain current2) ID,pulse TC=25°C -360
Avalanche energy, single pulse2) EAS ID=-45A 60 mJ
Avalanche current, single pulse IAS --90 A
Gate source voltage VGS -±163) V
Power dissipation Ptot TC=25 °C 125 W
Operating and storage temperature Tj,Tstg - -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
VDS -40
V
RDS(on) 4.3 mW
ID-90 A
Product Summary
PG-TO252-3-313
Type Package Marking
IPD90P04P4L-04 PG-TO252-3-313 4P04L04
Rev. 1.0 page 1 2011-04-27
IPD90P04P4L-04
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case RthJC - - - 1.2 K/W
SMD version, device on PCB RthJA minimal footprint - - 62
6 cm2cooling area4) - - 40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID= -1mA -40 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=-250µA -1.2 -1.7 -2.2
Zero gate voltage drain current IDSS VDS=-32V, VGS=0V,
Tj=25°C - -0.08 -1 µA
VDS=-32V, VGS=0V,
Tj=125°C2) - -20 -200
Gate-source leakage current IGSS VGS=-16V, VDS=0V - - -100 nA
Drain-source on-state resistance RDS(on) VGS=-4.5V, ID=-85A - 5.1 6.6 mW
VGS=-10V, ID=-90A - 3.6 4.3
Values
Rev. 1.0 page 2 2011-04-27
IPD90P04P4L-04
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
2)
Input capacitance Ciss - 8900 11570 pF
Output capacitance Coss - 2532 3800
Reverse transfer capacitance Crss - 100 200
Turn-on delay time td(on) - 20 - ns
Rise time tr- 20 -
Turn-off delay time td(off) - 140 -
Fall time tf- 60 -
Gate Charge Characteristics
2)
Gate to source charge Qgs - 31 40 nC
Gate to drain charge Qgd - 24 48
Gate charge total Qg- 135 176
Gate plateau voltage Vplateau - -3.5 - V
Reverse Diode
Diode continous forward current2) IS- - -90 A
Diode pulse current2) IS,pulse - - -360
Diode forward voltage VSD VGS=0V, IF=-90A,
Tj=25°C - -1 -1.3 V
Reverse recovery time2) trr - 63 - ns
Reverse recovery charge2) Qrr - 72.3 - nC
VR=-20V, IF=-50A,
diF/dt=-100A/µs
2) Defined by design. Not subject to production test.
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) VGS=+5V/-16V according AEC; VGS=+16V for max 168h at TJ=175°C
1) Current is limited by bondwire; with an RthJC = 1.2K/W the chip is able to carry -136A at 25°C.
TC=25°C
Values
VGS=0V, VDS=-25V,
f=1MHz
VDD=-20V,
VGS=-10V, ID=-90A,
RG=3.5W
VDD=-32V, ID=-90A,
VGS=0 to -10V
Rev. 1.0 page 3 2011-04-27
IPD90P04P4L-04
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≤ -6V ID= f(TC); VGS = -10V
3 Safe operating area 4 Max. transient thermal impedance
ID= f(VDS); TC= 25 °C; D= 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
-VDS [V]
-ID[A]
single pulse
0.01
0.05
0.1
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
101
100
10-1
10-2
10-3
tp[s]
ZthJC [K/W]
0
20
40
60
80
100
120
140
0 50 100 150 200
TC[°C]
Ptot [W]
0
20
40
60
80
100
0 50 100 150 200
TC[°C]
-ID[A]
Rev. 1.0 page 4 2011-04-27
IPD90P04P4L-04
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID= f(VDS); Tj= 25 °C RDS(on) = (ID); Tj= 25 °C
parameter: -VGS parameter: -VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID= f(VGS); VDS = -6V RDS(on) = f(Tj); ID= -70 A; VGS = -10 V
parameter: Tj
2.5
3.5
4.5
5.5
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [mW]
-55 °C
25 °C
175 °C
0
60
120
180
240
300
360
1.6 2.6 3.6 4.6
-VGS [V]
-ID[A]
3V
3.5V
4V
4.5V
5V
10V
0
60
120
180
240
300
360
0 1 2 3 4 5 6
-VDS [V]
-ID[A]
2.8V 3V 3.5V
4V
4.5V
5V
10V
3
8
13
18
23
0 30 60 90
-ID[A]
RDS(on) [mW]
Rev. 1.0 page 5 2011-04-27
IPD90P04P4L-04
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS =VDS C= f(VDS); VGS = 0 V; f= 1 MHz
parameter: -ID
11 Typical forward diode characteristicis 12 Drain-source breakdown voltage
IF = f(VSD)VBR(DSS) = f(Tj); ID= -1 mA
parameter: Tj
25 °C
175 °C
100
101
102
103
0 0.4 0.8 1.2 1.6
-VSD [V]
-IF[A]
Ciss
Coss
Crss
105
104
103
102
101
0 5 10 15 20 25 30
-VDS [V]
C[pF]
250µA
2500µA
0.5
1
1.5
2
-60 -20 20 60 100 140 180
Tj[°C]
-VGS(th) [V]
35
36
37
38
39
40
41
42
43
44
45
-60 -20 20 60 100 140 180
Tj[°C]
-VBR(DSS) [V]
Rev. 1.0 page 6 2011-04-27
IPD90P04P4L-04
13 Typ. gate charge 14 Gate charge waveforms
VGS = f(Qgate); ID= -90 A pulsed VGS = f(Qgate); ID= -90 A pulsed
parameter: VDD parameter: VDD
VGS
Qgate
Qgs Qgd
Qg
VGS
Qgate
Qgs Qgd
Qg
-8V
-32V
0
1
2
3
4
5
6
7
8
9
10
0 35 70 105 140
Qgate [nC]
-VGS [V]
Rev. 1.0 page 7 2011-04-27
IPD90P04P4L-04
Published by
81726 Munich, Germany
©
Infineon Technologies AG 2011
All Rights Reserved.
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or characteristics. With respect to any examples or hints given herein, any typical values stated
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disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
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).
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If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2011-04-27
IPD90P04P4L-04
Revision History
Version
0.1
0.2
1.0 Final Data Sheet
Date
29.01.2010
16.12.2010
27.04.2011
Changes
Initial Target Data Sheet
Preliminary Data Sheet
Rev. 1.0 page 9 2011-04-27
Mouser Electronics
Authorized Distributor
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