IRG8B08N120KDPbF
IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRG8P08N120KDPbF TO-247AC Tube 25 IRG8P08N120KDPbF
IRG8P08N120KD-EPbF TO-247AD Tube 25 IRG8P08N120KD-EPbF
IRG8B08N120KDPbF TO-220AB Tube 50 IRG8B08N120KDPbF
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current (Silicon Limited) 15
IC @ TC = 100°C Continuous Collector Current 8
ICM Pulse Collector Current (see fig. 2) 15
ILM Clamped Inductive Load Current (see fig. 3) 20
IF @ TC = 25°C Diode Continuous Forward Current 11
IF @ TC = 100°C Diode Continuous Forward Current 6
VGE Continuous Gate-to-Emitter Voltage ±30 V
PD @ TC = 25°C Maximum Power Dissipation 89 W
PD @ TC = 100°C Maximum Power Dissipation 36
TJ Operating Junction and -40 to +150
C
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
A
IFM Diode Maximum Forward Current 20
VCES = 1200V
IC = 8A, TC =100°C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 5A
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014
Features
Benchmark Low VCE(ON) High Efficiency in a Motor Drive Applications
10μs Short Circuit SOA Increases margin for short circuit protection scheme
Positive VCE(ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation
Square RBSOA and high ILM- rating Rugged Transient Performance
Lead-Free, RoHS compliant Environmentally friendly
Benefits
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G C E
Gate Collector Emitter
TO-247AC
IRG8P08N120KDPbF
E
G
n-channel
C
TO-247AD
IRG8P08N120KD-EPbF
TO-220AB
IRG8B08N120KDPbF
E
G
C G
E
C
E
G C
Thermal Resistance
Parameter Typ. Max.
Units
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB ––– 1.3
°C/W
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-220AB ––– 2.6
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) TO-247 ––– 1.4
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) TO-247 ––– 2.6
RCS Thermal Resistance, Case-to-Sink (flat, greased surface)TO-220AB 0.50 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-220AB ––– 62
RCS Thermal Resistance, Case-to-Sink (flat, greased surface)TO-247 0.24 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-247 ––– 40
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 1.2 — V/°C VGE = 0V, IC = 1mA (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage — 1.7 2.0
V IC = 5A, VGE = 15V, TJ = 25°C
— 2.1 — IC = 5A, VGE = 15V, TJ = 150°C
VGE(th) Gate Threshold Voltage 5.0 — 6.5 V VCE = VGE, IC = 200µA
VGE(th)/TJ Threshold Voltage Temperature Coeff. — -14 — mV/°C VCE = VGE, IC = 200µA(25°C-150°C)
gfe Forward Transconductance — 2.9 — S VCE = 50V, IC = 5A, PW = 20µs
ICES Collector-to-Emitter Leakage Current — 1.0 35 µA VGE = 0V, VCE = 1200V
— 1.0 —
mAVGE = 0V, VCE = 1200V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±30V
VF Diode Forward Voltage Drop — 2.3 2.7 IF = 5A
— 2.5 — IF = 5A, TJ = 150°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
Qg Total Gate Charge (turn-on) — 30 45
nC
IC = 5A
Qge Gate-to-Emitter Charge (turn-on) — 1.1 1.7
VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 20 — VCC = 600V
Eon Turn-On Switching Loss — 0.3 —
mJ
IC = 5A, VCC = 600V, VGE=15V
RG = 47, TJ = 25°C
Energy losses include tail & diode
reverse recovery
Eoff Turn-Off Switching Loss — 0.3 —
Etotal Total Switching Loss — 0.6 —
td(on) Turn-On delay time — 20 —
ns
tr Rise time — 20 —
td(off) Turn-Off delay time — 160 —
tf Fall time — 240 —
Eon Turn-On Switching Loss — 0.5 —
mJ
IC = 5A, VCC = 600V, VGE=15V
RG = 47, TJ = 150°C
Energy losses include tail & diode
reverse recovery
Eoff Turn-Off Switching Loss — 0.5 —
Etotal Total Switching Loss — 1.0 —
td(on) Turn-On delay time — 20 —
ns
tr Rise time — 20 —
td(off) Turn-Off delay time — 300 —
tf Fall time — 290 —
Cies Input Capacitance — 720 — VGE = 0V
Coes Output Capacitance — 30 — pF VCC = 30V
Cres Reverse Transfer Capacitance — 15 — f = 1.0Mhz
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C, IC = 20A
FULL SQUARE VCC = 960V, Vp ≤ 1200V
VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area 10— — µs TJ = 150°C,VCC = 600V, Vp ≤ 1200V
VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode — 240 — µJ TJ = 150°C
trr Diode Reverse Recovery Time — 50 — ns VCC = 600V, IF = 5A
Irr Peak Reverse Recovery Current — 11 — A VGE = 15V, Rg = 47
V
Notes:
V
CC = 80% (VCES), VGE = 20V.
R
is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
0.1 110 100
f , Frequency ( kHz )
0
2
4
6
8
10
12
14
16
Load Current ( A )
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 36W
I
Square Wave:
V
CC
Diode as specified
10 100 1000 10000
VCE (V)
1
10
100
IC (A)
Fig. 5 - Typ. IGBT Saturation Voltage
VGE = 15V; tp = 20µs
1 10 100 1000 10000
VCE (V)
0.01
0.1
1
10
100
IC (A)
10µsec
100µsec
Tc = 25°C
Tj = 150°C
Single Pulse
DC
1msec
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
0 2 4 6 8 10
VCE (V)
0.1
1.0
10
100
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 4 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
Fig. 2 - Forward SOA
TC = 25°C; TJ ≤ 150°C; VGE = 15V
02468
VCE (V)
0.1
1
10
100
ICE (A)
Tc = -40°C
Tc = 25°C
Tc = 150°C
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
0 5 10 15 20 25 30 35
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES = 600V
VCES = 400V
4 6 8 10 12 14 16
VGE (V)
0.1
1
10
100
ICE (A)
TJ = -40°C
TJ = 25°C
TJ = 150°C
40 60 80 100 120 140 160 180 200 220
Rg ()
0.0
0.3
0.6
0.9
1.2
Energy (mJ)
EON @ Tj = 150°C
EOFF @ Tj = 150°C
ERR @ Tj = 150°C
EON @ Tj = 25°C
EOFF @ Tj = 25°C
ERR @ Tj = 25°C
Fig. 10 - Typ. Energy Loss vs. RG
VCE = 600V, ICE = 5A; VGE = 15V
40 60 80 100 120 140 160 180 200 220
RG ()
1
10
100
1000
10000
Swiching Time (ns)
tR
tdON
tF
tdOFF
Fig. 11 - Typ. Switching Time vs. RG
TJ = 150°C; VCE = 600V, ICE = 5A; VGE = 15V
0 2 4 6 8 10
IC (A)
1
10
100
1000
Swiching Time (ns)
tR
tdON
tF
tdOFF
Fig. 9 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 47; VGE = 15V
Fig. 7 - Typical Gate Charge vs. VGE
ICE = 5A
12345678910
IC (A)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Energy (mJ)
EOFF @ Tj = 150°C
EON @ Tj = 150°C
ERR @ Tj = 150°C
EOFF @ Tj = 25°C
EON @ Tj = 25°C
ERR @ Tj = 25°C
Fig. 8 - Typ. Energy Loss vs. IC
VCE = 600V, RG = 47; VGE = 15V
Fig. 6 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
Fig. 14 - Typ. Diode Forward Voltage Drop
Characteristics
Fig. 13 - Typ. Diode ERR vs. IF
TJ = 150°C
Fig. 12 - Fig. 12 - Typ. IRR vs. di/dt
350 400 450 500 550 600
diF /dt (A/µs)
8.5
9.0
9.5
10.0
10.5
11.0
IRR (A)
VCC = 600V
Tj = 150°C
VGE = 15V
IF = 5A
RG = 220
RG =
RG = 47
RG = 148
0 2 4 6 8 10
IF (A)
0
100
200
300
400
500
Energy (µJ)
RG = 47
RG = 100
RG = 148
RG = 220
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VF (V)
0.1
1
10
100
IF (A)
-40°C
25°C
150°C
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
Fig. 16 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-247
Fig. 15 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
Ri (°C/W) i (sec)
0.12192 0.000058
0.48468 0.000092
0.51027 0.001541
0.28298 0.011665
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) i (sec)
0.07490 0.000029
1.19683 0.000184
0.93086 0.002329
0.39894 0.01613
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig. 17 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-220AB
Ri (°C/W) i (sec)
0.03109 0.000014
0.51536 0.000089
0.50866 0.001767
0.24474 0.01039
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig. 18 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-220AB
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
Ri (°C/W) i (sec)
0.03331 0.000013
1.22958 0.000240
0.94175 0.002513
0.39481 0.015930
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit
(Board Stray Inductance 180nH)
Fig.C.T.5 - BVCES Filter Circuit
0
1K
VCC
DUT
L
L
Rg
80 V
DUT VCC
+
-
DC
4X
DUT
VCC
R
SH
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
-5V
G force
C sense
100K
DUT
0.0075µF
D1 22K
E force
C force
E sense
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
Fig. WF1 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
-5
0
5
10
15
20
25
30
35
40
-100
0
100
200
300
400
500
600
700
800
-10.0 -5.0 0.0 5.0 10.0 15.0 20.0
Ice (A)
Vce (V)
Time (uS)
V
CE
I
CE
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IN T E R N A T IO N A L PART NUMBER
R E C T IF IE R
LO T C O DE
ASSEM BLY
LO G O
YEAR 0 = 2000
DATE CODE
W EEK 19
LIN E C
LOT CODE 1789
E X A M P L E : T H IS IS A N IR F 1 0 1 0
N o te : "P " in a s s e m b ly lin e p o s itio n
indicates "Lead - Free"
IN TH E ASSEM BLY LINE "C"
ASSEM BLED O N W W 19, 2000
TO-220AB packages are not recommended for Surface Mount Application.
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
YEAR 1 = 2001
DATE CODE
PART NUMBER
INTERNATIONAL
LOGO
RECTIFIER
ASSEMBLY
56 57
IRFPE30
135H
LINE H
indicates "Lead-Free" WEEK 35
LOT CODE
IN THE ASSEMBLY LINE "H"
ASSEMBLED ON WW 35, 2001
Notes: This part marking information applies to devices produced after 02/26/2001
Note: "P" in assembly line position
EXAMPLE:
WITH ASSEMBLY
THIS IS AN IRFPE30
LOT CODE 5657
TO-247AC Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AC package is not recommended for Surface Mount Application.
12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
ASSEM BLY YEAR 0 = 2000
ASSEM BLED O N WW 35, 2000
IN THE ASSEM BLY LINE "H"
EXAM PLE: THIS IS AN IRGP30B120KD-E
LOT CO D E 5657
WITH ASSEMBLY PART NUMBER
DATE CODE
IN T E R N A T IO N A L
RECTIFIER
LO G O
035H
5 6 57
WEEK 35
LINE H
LOT CODE
N o te : "P " in a s s e m b ly lin e p o s itio n
indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AD package is not recommended for Surface Mount Application.
13 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Qualification Information†
Qualification Level
Industrial†
(per JEDEC JESD47F) ††
Moisture Sensitivity Level TO-247AC
TO-247AD
RoHS Compliant Yes
N/A
TO-220
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date Comments
12/12/2014 Added TO-220 package in the datasheet.
