NCV211RSQT2G - ON SEMICONDUCTOR

July, 2018 − Rev. 7 1Publication Order Number:

NCS210R/D

NCS210R, NCV210R,

NCS211R, NCV211R,

NCS213R, NCV213R,

NCS214R, NCV214R

Current-Shunt Monitors,

Voltage Output,

Bidirectional Zero-Drift,

Low- or High-Side Current

Sensing

The NCS210R, NCS211R, NCS213R and NCS214R are voltage

output, current shunt monitors (also called current sense amplifiers)

which can measure voltage across shunts at common−mode voltages

from −0.3 V to 26 V, independent of supply voltage. The low offset of

the zero−drift architecture enables current sensing across the shunt

with maximum voltage drop as low as 10 mV full−scale. These

devices can operate from a single +2.2 V to +26 V power supply,

drawing a maximum of 80 mA of supply current, and are specified over

the extended operating temperature range (–40°C to +125°C).

Available in the SC70−6 and UQFN10 packages.

Features

•Wide Common Mode Input Range: −0.3 V to 26 V

•Supply Voltage Range: 2.2 V to 26 V

•Low Offset Voltage: ±35 mV max

•Low Offset Drift: 0.5 mV/°C

•Low Gain Error: 1% max

•Low Gain Error Drift: 10 ppm/°C max

•Rail−to−Rail Output Capability

•Low Current Consumption: 40 mA typ, 80 mA max

•NCV Prefix for Automotive and Other Applications Requiring

Unique Site Qualified and PPAP Capable

Typical Applications

•Current Sensing (High−Side/Low−Side)

•Automotive

•Telecom

•Power Management

•Battery Charging and Discharging

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See detailed ordering, marking and shipping information on

page 2 of this data sheet.

ORDERING INFORMATION

XXX = Specific Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

XXMG

UQFN10

MU SUFFIX

CASE 488AT

MARKING DIAGRAM

PIN CONNECTIONS

*NC denotes no internal connection. These pins can

be left floating or connected to any voltage between

VS and GND.

IN−

IN+

REF

GND

OUT

*NC

IN+

SC70−6

SQ SUFFIX

CASE 419B

XXXMG

REF

GND

OUT

IN−

IN+

(Top Views)

NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R

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NCS21xR

REF

OUT

IN-

IN+

GND

RSHUNT

Supply Load

0.01 uF

0.1 uF

Reference

Voltage

+2.2 V to +26 V

Output

VOUT +ǒILOAD RSHUNTǓGAIN )VREF

Figure 1. Example Application Schematic of High−Side Current Sensing

ORDERING INFORMATION

Device Gain R3 and R4 R1 and R2 Marking Package Shipping†

NCS210RSQT2G 200 5 kW1 MWAVY SC70−6 3000 / Tape and Reel

NCV210RSQT2G* 200 5 kW1 MWAVY SC70−6 3000 / Tape and Reel

NCS210RMUTAG 200 5 kW1 MWCP UQFN10 3000 / Tape and Reel

NCS211RSQT2G 500 2 kW1 MWAVZ SC70−6 3000 / Tape and Reel

NCV211RSQT2G* 500 2 kW1 MWAVZ SC70−6 3000 / Tape and Reel

NCS213RSQT2G 50 20 kW1 MWAV3 SC70−6 3000 / Tape and Reel

NCV213RSQT2G* 50 20 kW1 MWAV3 SC70−6 3000 / Tape and Reel

NCS214RSQT2G 100 10 kW1 MWAV4 SC70−6 3000 / Tape and Reel

NCV214RSQT2G* 100 10 kW1 MWAV4 SC70−6 3000 / Tape and Reel

NCS214RMUTAG 100 10 kW1 MWCR UQFN10 3000 / Tape and Reel

NCS211RMUTAG 500 2 kW1 MWCM UQFN10 3000 / Tape and Reel

NCS213RMUTAG 50 20 kW1 MWCQ UQFN10 3000 / Tape and Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP

Capable.

NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R

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Table 1. MAXIMUM RATINGS

Parameter Symbol Value Unit

Supply Voltage (Note 1) VS+30 V

Analog Inputs Differential (VIN+)−(VIN−)VIN+, VIN− −30 to +30 V

Common−Mode (Note 2) (GND−0.3) to +30

REF Input VREF (GND−0.3) to (Vs +0.3) V

Output (Note 2) VOUT (GND−0.3) to (Vs +0.3) V

Input Current into Any Pin (Note 2) 5 mA

Maximum Junction Temperature TJ(max) +150 °C

Storage Temperature Range TSTG −65 to +150 °C

ESD Capability, Human Body Model (Note 3) HBM ±2000 V

Charged Device Model (Note 3) CDM ±2000 V

Latch−Up Current (Note 4) ILU 100 mA

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be af fected.

1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe

operating parameters.

2. Input voltage at any pin may exceed the voltage shown if current at that pin is limited to 5 mA.

3. This device series incorporates ESD protection and is tested by the following methods:

ESD Human Body Model tested per JEDEC standard JS−001−2017 (AEC−Q100−002).

ESD Charged Device Model tested per JEDEC standard JS−002−2014 (AEC−Q100−011).

4. Latch−up Current tested per JEDEC standard JESD78E (AEC−Q100−004)

Table 2. RECOMMENDED OPERATING RANGES

Parameter Symbol Min Typ Max Unit

Common−mode input voltage VCM −0.3 12 26 V

Supply Voltage VS2.2 5 26 V

Ambient Temperature TA−40 125 °C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

Table 3. THERMAL CHARACTERISTICS (Note 5)

Parameter Symbol Value Unit

Thermal Resistance, Junction−to−Air (Note 6) SC70

UQFN10 RqJA 250

150

°C/W

5. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe

operating parameters.

6. Values based on copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate.

NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R

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Table 4. ELECTRICAL CHARACTERISTICS At TA = +25°C, VSENSE = VIN+ − VIN−;

NCS210R, NCS213R and NCS214R: VS = +5 V, VIN+ = 12 V, and VREF = VS/2, unless otherwise noted.

NCS211R: VS = +12 V, VIN+ = 12 V, and VREF = VS/2, unless otherwise noted.

Boldface limits apply over the specified temperature range of TA = −40°C to 125°C, guaranteed by characterization and/or design.

Symbol Parameter Test Conditions Min Typ Max Unit

INPUT

VCM Common−Mode Input Voltage Range −0.3 26 V

CMRR Common−Mode Rejection

Ratio NCx210R,

NCx211R,

NCx214R

VIN+ = 0 V to +26 V,

VSENSE = 0 mV

TA = −40°C to 125°C)

105 125 dB

NCx213R 100 120

VOS Offset Voltage RTI

(Note 7) NCx210R,

NCx211R VSENSE = 0 mV ±0.55 ±35 mV

NCx213R ±5±100

NCx214R ±1±60

dVOS/dT RTI vs Temperature

(Note 7) NCx21xR VSENSE = 0 mV

TA = –40°C to +125°C0.1 0.5 mV/°C

PSRR RTI vs Power Supply Ratio (Note 7) VS = +2.7 V to +26 V,

VIN+ =18 V, VSENSE = 0 mV ±0.1 ±10 mV/V

IIB Input Bias Current VSENSE = 0 mV 39 60 mA

IIO Input Offset Current VSENSE = 0 mV ±0.1 mA

OUTPUT

GGain NCx210R 200 V/V

NCx211R 500

NCx213R 50

NCx214R 100

EGGain Error NCx21xR VSENSE = −5 mV to 5 mV,

TA = −40°C to 125°C±0.2 +1%

EGGain Error vs Temperature NCx21xR TA = −40°C to 125°C 3 10 ppm/°C

Nonlinearity Error VSENSE = −5 mV to 5 mV ±0.01 %

CLMaximum Capacitive Load No sustained oscillation 1 nF

VOLTAGE OUTPUT

VOH Swing to VS Power Supply Rail RL = 10 kW to GND

TA = –40°C to +125°C (Note 8) VS −

0.075 VS − 0.2 V

VOL Swing to GND RL = 10 kW to GND

TA = –40°C to +125°CVGND

+0.005 VGND

+0.05 V

FREQUENCY RESPONSE

BW Bandwidth (f−3dB)NCx210R CLOAD = 10 pF 40 kHz

NCx211R 25

NCx213R 90

NCx214R 60

SR Slew Rate 1V/ms

NOISE

enVoltage Noise Density f = 1 kHz 45

POWER SUPPLY

VSOperating Voltage Range TA = –40°C to +125°C2.2 26 V

IQQuiescent Current VSENSE = 0 mV 40 80 mA

Quiescent Current over Temperature TA = –40°C to +125°C100 mA

7. RTI = referenced−to−input

8. VS = 5 V for NCx211R

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R

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TYPICAL CHARACTERISTICS (TA = 25°C, VS = 5 V, VIN+ = 12 V and VREF = VS/2 unless otherwise noted.)

(The NCS210R is used for Typical Characteristics)

Figure 2. Input Offset Voltage Production

Distribution Figure 3. Input Offset Voltage vs. Temperature

INPUT OFFSET VOLTAGE (mV) TEMPERATURE (°C)

251550−5−10−20−30

400

800

1000

1200

1400

1800

2000

15012585250−10−40−50

−100

−80

−40

−20

100

Figure 4. Common−Mode Rejection

Production Distribution Figure 5. Common−Mode Rejection Ratio vs.

Temperature

COMMON−MODE REJECTION RATIO (mV/V) TEMPERATURE (°C)

4310−1−3−4−5

500

1000

2000

2500

3000

4000

4500

125 15085250−10−40−50

−5

−4

−2

−1

Figure 6. Gain Error Production Distribution Figure 7. Gain Error vs. Temperature

GAIN ERROR (%) TEMPERATURE (°C)

1.00.40.20−0.2−0.6−0.8−1.0

1000

2000

4000

5000

6000

8000

9000

1258525 1500−10−40−50

−1.0

−0.8

−0.4

−0.2

0.2

0.8

1.0

POPULATION

INPUT OFFSET VOLTAGE (mV)

POPULATION

COMMON−MODE REJECTION

RATIO (mV/V)

POPULATION

GAIN ERROR (%)

−60

−3

−0.6

0.4

0.6

1600

600

200

−15 10 20 30 35−25

3000

7000

−0.4 0.80.6

−35

1500

3500

−2 2 5

NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R

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TYPICAL CHARACTERISTICS (TA = 25°C, VS = 5 V, VIN+ = 12 V and VREF = VS/2 unless otherwise noted.)

(The NCS210R is used for Typical Characteristics)

Figure 8. Gain vs. Frequency Figure 9. Power Supply Rejection Ratio vs.

Frequency

FREQUENCY (Hz) FREQUENCY (Hz)

1M100k10k 10M1k10010

−10

100k10k1k10010

100

120

140

160

Figure 10. Common−Mode Rejection Ratio vs.

Frequency Figure 11. Positive Output Voltage Swing vs.

Output Current, VS = 2.2 V

FREQUENCY (Hz) OUTPUT CURRENT (mA)

1M100k10k1k10010

120

140

160

14121086420

V(+)−0.5

V+

Figure 12. Negative Output Voltage Swing vs.

Output Current, VS = 2.2 V Figure 13. Positive Output Voltage Swing vs.

Output Current, VS = 2.7 V

OUTPUT CURRENT (mA) OUTPUT CURRENT (mA)

12108146420

GND 181412108620

GAIN (dB)

POWER SUPPLY REJECTION RATIO (dB)

COMMON−MODE REJECTION RATIO (dB)

OUTPUT VOLTAGE (V)

100

41620

VS = 5 V + 250 mVpp

VCM = 0 V

VREF = 2.5 V

VDIF = shorted

CL = 15 pF

VS = 5 V

Sine Disturbance = 1 Vpp

VCM = 12 V

VREF = 2.5 V

CL = 15 pF

125°C

−40°C

25°C

125°C

−40°C

25°C

125°C−40°C

25°C

V(+)−1.0

V(+)−1.5

V(+)−2.0

V(+)−2.5

V(+)−3.0

V(+)−0.5

V+

V(+)−1.0

V(+)−1.5

V(+)−2.0

V(+)−2.5

V(+)−3.0

GND+0.5

GND+1.0

GND+1.5

GND+2.0

GND+2.5

GND+3.0

NCS210R

NCS211R

NCS213R

NCS214R

NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R

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TYPICAL CHARACTERISTICS (TA = 25°C, VS = 5 V, VIN+ = 12 V and VREF = VS/2 unless otherwise noted.)

(The NCS210R is used for Typical Characteristics)

GND

GND+0.5

GND+1.0

GND+1.5

GND+2.0

GND+2.5

GND+3.0

Figure 14. Negative Output Voltage Swing vs.

Output Current, VS = 2.7 V Figure 15. Positive Output Voltage Swing vs.

Output Current, VS = 5 V

OUTPUT CURRENT (mA) OUTPUT CURRENT (mA)

181612106420 2418141210620

Figure 16. Negative Output Voltage Swing vs.

Output Current, VS = 5 V Figure 17. Positive Output Voltage Swing vs.

Output Current, VS = 26 V

OUTPUT CURRENT (mA) OUTPUT CURRENT (mA)

201814128620

Figure 18. Negative Output Voltage Swing vs.

Output Current, VS = 26 V Figure 19. Input Bias Current vs.

Common−Mode Voltage with VS = 5 V

OUTPUT CURRENT (mA) COMMON−MODE VOLTAGE (V)

302520151050

−10

OUTPUT VOLTAGE (V)

INPUT BIAS CURRENT (mA)

125°C−40°C

25°C

125°C−40°C

25°C

81420 4 8 16 20 22

2418141210620

125°C−40°C

25°C

4 8 16 20 22

410162224

125°C−40°C

25°C

201814128620 4 10 16 22 24

125°C−40°C

25°C

IB+, IB−, VREF = 0 V

IB+, IB−, VREF = 2.5 V

GND

V(+)−0.5

V+

V(+)−1.0

V(+)−1.5

V(+)−2.0

V(+)−2.5

V(+)−3.0

GND+0.5

GND+1.0

GND+1.5

GND+2.0

GND+2.5

GND+3.0

GND

V(+)−0.5

V+

V(+)−1.0

V(+)−1.5

V(+)−2.0

V(+)−2.5

V(+)−3.0

GND+0.5

GND+1.0

GND+1.5

GND+2.0

GND+2.5

GND+3.0

NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R

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TYPICAL CHARACTERISTICS (TA = 25°C, VS = 5 V, VIN+ = 12 V and VREF = VS/2 unless otherwise noted.)

(The NCS210R is used for Typical Characteristics)

Figure 20. Input Bias Current vs. Common−Mode

Voltage with VS = 0 V (Shutdown) Figure 21. Input Bias Current vs. Temperature

COMMON−MODE VOLTAGE (V) TEMPERATURE (°C)

302520151050

−5

1258525 1500−10−40−50

Figure 22. Quiescent Current vs. Temperature Figure 23. Voltage Noise Density vs.

Frequency

TEMPERATURE (°C) FREQUENCY (Hz)

1258525 1500−10−40−50

100

100k10k1k100101

100

Figure 24. 0.1 Hz to 10 Hz Voltage Noise

(Referred to Input) Figure 25. Step Response

(10 mVpp Input Step)

TIME (s) TIME (s)

98643210

−1000

−800

−400

−200

400

800

1000

0.70.60.40.30.20−0.1−0.2

INPUT BIAS CURRENT (mA)

QUIESCENT CURRENT (mA)

VOLTAGE NOISE DENSITY (nV/√Hz)

VOLTAGE (nV)

INPUT VOLTAGE

(5 mV/div)

IB+, IB−, VREF = 0 V

IB+, VREF = 2.5 V

IB−, VREF = 2.5 V

VS = ±2.5 V

VREF = 0 V

VIN−, VIN+ = 0 V

RL = 10 kW

0.1 0.5 0.8

INPUT

OUTPUT

OUTPUT VOLTAGE

(0.5 V/div)

VS = ±2.5 V

VREF = 0 V

VIN−, VIN+ = 0 V

RL = 10 kW

57 10

−600

200

600

NCS210R

NCS211R

NCS213R

NCS214R

NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R

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TYPICAL CHARACTERISTICS (TA = 25°C, VS = 5 V, VIN+ = 12 V and VREF = VS/2 unless otherwise noted.)

(The NCS210R is used for Typical Characteristics)

Figure 26. Common−Mode Voltage Transient

Response Figure 27. Inverting Differential Input Overload

TIME (ms) TIME (ms)

400250200100500−50−100

−2

−1

140010008006004002000−200

−2

Figure 28. Noninverting Differential Input

Overload Figure 29. Start−Up Response

TIME (ms) TIME (ms)

120010008006004002000−200

−2

7006004002001000−100−200

−1

Figure 30. Brownout Recovery

TIME (ms)

8005004002001000−100−200

INPUT VOLTAGE (V)

VOLTAGE (V)

150 350300

−250

−200

−150

−100

100

150

250

−50

200

OUTPUT VOLTAGE (mV)

1200

1400

300 700600

300 500 800

INPUT

OUTPUT

Inverting Input

Output

Noninverting Input

Output

Supply Voltage

Output Voltage

Supply Voltage

Output Voltage

VDIFF = 0 V

VREF = 2.5 V

VDIFF = 0 V

VREF = 0 V

NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R

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Basic Connections

Current Sensing Techniques

The NCS21xR current−sense amplifiers can be

configured for both low−side and high−side current sensing.

Low−side sensing appears to have the advantage of being

straightforward, inexpensive, and can be implemented with

a simple op amp circuit. However, the NCS21xR series of

devices provides the full differential input necessary to get

accurate shunt connections, while also providing a built−in

gain network with precision difficult to obtain with external

resistors. While at times the application requires low−side

sensing, only high−side sensing can detect a short from the

positive supply line to ground. Furthermore, high−side

sensing avoids adding resistance to the ground path of the

load being measured. The sections below focus primarily on

high−side current sensing.

Unidirectional Operation

In unidirectional current sensing, the current always flows

in the same direction. Common applications for

unidirectional operation include power supplies and load

current monitoring. Figure 31 shows the NCS21xR circuit

implementation for unidirectional operation using

high−side current sensing.

Basic connections for unidirectional operation include

connecting the load power supply, connecting a current

shunt to the differential inputs of the NCS21xR, grounding

the REF pin, and providing a power supply for the

NCS21xR. The NCS21xR can be connected to the same

power supply that it is monitoring current from, or it can be

connected to a separate power supply. If it is necessary to

detect short circuit current on the load power supply, which

may cause the load power supply to sag to near zero volts,

a separate power supply must be used on the NCS21xR.

When using multiple supplies, there are no restrictions on

power supply sequencing.

When no current is flowing though the RSHUNT, and the

REF pin is connected to ground, the NCS21xR output is

expected to be within 50 mV of ground. When current is

flowing through RSHUNT, the output will swing positive, up

to within 200 mV of the applied supply voltage, VS.

NCS21xR

REF

OUT

IN-

IN+

GND

RSHUNT Load

0.01uF

0.1uF

+2.2 V to +26 V

Output

Supply

Figure 31. Basic Unidirectional Connection

Bidirectional Operation

In bidirectional current sensing, the current

measurements are taken when current is flowing in both

directions. For example, in fuel gauging, the current is

measured when the battery is being charged or discharged.

Bidirectional operation requires the output to swing both

positive and negative around a bias voltage applied to the

REF pin. The voltage applied to the REF pin depends on the

application. However, most often it is biased to either half of

the supply voltage or to half the value of the measurement

system reference. Figure 32 shows bidirectional operation

with three different circuit choices that can be connected to

the REF pin to provide a voltage reference to the NCS21xR.

NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R

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NCS21xR

REF

OUT

IN-

IN+

GND

RSHUNT

Supply Load

0.01uF

0.1uF

Output

Shunt

Reference

or zener

Supply

Series

Reference

Supply Supply

Op Amp

(e.g. NCS2003, NCS20071)

Connect to any one of 3 possible circuits shown

+2.2 V to +26 V

(a)

(b) (c) (d)

Figure 32. Bidirectional Current Sensing with Three Example Voltage Reference Circuits

The REF pin must always be connected to a low

impedance circuit, such as in the Figure 32(b), (c), and (d).

The REF pin can be connected directly to any voltage supply

or voltage reference (shunt or series). However , if a resistor

divider network is used to provide the reference voltage, a

unity gain buffer circuit must be used, as shown in

Figure 32(d).

In bidirectional applications, any voltage that exceeds

VS+0.3 V applied to the REF pin will forward bias an ESD

diode between the REF pin and the VS pin. Note that this

exceeds the Absolute Maximum Ratings for the device.

Input and Output Filtering

Filtering at the input or output may be required for several

different reasons. In this section we will discuss the main

considerations with regards to these filter circuits.

In some applications, the current being measured may be

inherently noisy. In the case of a noisy signal, filtering after

the output of the current sense amplifier is often simpler,

especially where the amplifier output is fed into high

impedance circuitry. The amplifier output node provides the

greatest freedom when selecting components for the filter

and is very straightforward to implement, although it may

require subsequent buffering.

Other applications may require filtering at the input of t he

current sense amplifier. Figure 33 shows the recommended

schematic for input filtering.

NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R

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NCS21xR

REF

OUT

IN-

IN+

GND

RSHUNT

200mW

1nH

RFILT1

10W

RFILT2

10W

CFILT

0.25mFReference

Voltage

Figure 33. Input filtering compensates for shunt inductance on shunts

less than 1 mW, as well as high frequency noise in any application

Input filtering is complicated by the fact that the added

resistance of the filter resistors and the associated resistance

mismatch between them can adversely af fect gain, CMRR,

and VOS. The effect on VOS is partly due to input bias

currents as well. As a result, the value of the input resistors

should b e limited to 10 W or less. Ideally, select the capacitor

to exactly match the time constant of the shunt resistor and

its inductance; alternatively, select the capacitor to provide

a pole below that point. As an example, a filtering frequency

of 100 kHz would require an 80 nF capacitor. The capacitor

can have a low voltage rating, but should have good high

frequency characteristics.

Make the input filter time constant equal to or larger than

the shunt and its inductance time constant:

LSHUNT

RSHUNT v2@RFILT @CFILT

This simplifies to determine the value of CFILT based on

using 10 W resistors for each RFILT:

CFILT wLSHUNT

20RSHUNT

If the main purpose is to filter high frequency noise, the

capacitor should be increased to a value that provides the

desired filtering.

As the shunt resistors decrease in value, shunt inductance

can significantly af fect frequency response. At values below

1mW, the shunt inductance causes a zero in the transfer

function that often results in corner frequencies in the low

100’s of kHz. This inductance increases the amplitude of

high frequency spike transient events on the current sensing

line that can overload the front end of any shunt current

sensing IC. This problem must be solved by filtering at the

input of the amplifier. Note that all current sensing IC’s are

vulnerable to this problem, regardless of manufacturer

claims. Filtering is required at the input of the device to

resolve this problem, even if the spike frequencies are above

the rated bandwidth of the device.

Advantages When Used for Low−Side Current Sensing

The NCS21xR series of fer many advantages for low−side

current sensing. The true differential input is ideal for

connection to either Kelvin Sensing shunts or conventional

shunts. Additionally, the true differential input rejects the

common−mode noise often present even in low−side current

sensing. The NCS21xR also provides a reference pin to set

the output offset from an external reference. Providing all of

these features in a tiny package makes the NCS21xR very

competitive when compared to discrete op amp solutions.

Designing for Input Transients Exceeding 30 Volts

For applications that have transient common−mode

voltages greater than 30 volts, external input resistors of

10 W provide a convenient location to add either Zener

diodes or transient voltage suppression diodes (also known

as TVS diodes). There are two possible configurations: one

using a single TVS diode with diodes across the amplifier

inputs as shown in Figure 34, and the second configuration

using two TVS diodes as shown in Figure 35.

NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R

www.onsemi.com

NCS21xR

REF

OUT

IN-

IN+

GND

RSHUNT

200mW

1nH

RFILT1

10W

RFILT2

10W

D1, D2

1N4148

TVS1

ON Semiconductor

SMBJ18(C)A

Reference

Voltage

Figure 34. Single TVS transient common−mode protection

NCS21xR

REF

OUT

IN-

IN+

GND

RSHUNT

200mW

1nH

RFILT1

10W

RFILT2

10W

TVS1

ON Semiconductor

SMBJ18(C)A

TVS2

ON Semiconductor

SMBJ18(C)A

Reference

Voltage

Figure 35. Dual TVS Transient Common−mode Protection

Use Zener diodes or unidirectional TVS diodes with

clamping voltage ratings up to a maximum of 30 volts.

Select TVS diodes with the lowest voltage rating possible

for use in the system. There is a wide range between standoff

voltage and maximum clamping voltage in TVS diodes.

Most diodes rated at a standoff voltage of 18 V have a

maximum clamping voltage of 29.2 V. Refer to the TVS data

sheet and the parameters of your power supply to make the

selection. In general, higher power TVS diodes demonstrate

a sharper clamping knee; providing a tighter relationship

between rated breakdown and maximum clamping voltage.

Selecting the Shunt Resistor

The desired accuracy of the current measurement

determines the precision, shunt size, and the resistor value.

The larger the resistor value, the more accurate the

measurement possible, but a large resistor value also results

in greater current loss.

For the most accurate measurements, use four terminal

current sense resistors, as shown in Figure 36. It provides

two terminals for the current path in the application circuit,

and a second pair for the voltage detection path of the sense

amplifier. This technique is also known as Kelvin Sensing.

This insures that the voltage measured by the sense amplifier

is the actual voltage across the resistor and does not include

the small resistance of a combined connection. When using

non−Kelvin shunts, follow manufacturer recommendations

on how to lay out the sensing traces closely.

NCS210R, NCV210R, NCS211R, NCV211R, NCS213R, NCV213R, NCS214R, NCV214R

www.onsemi.com

Figure 36. Surface Mount Kelvin Shunt

Current Output Configuration

In applications where the readout boards are remotely

located, the voltage output of the NCS21xR can be

converted to a precision current output. The precision output

current measurements are read more accurately as it

overcomes the errors due to ground drops between the

boards.

NCS21xR

REF

OUT

IN-

IN+

GND

Current Measurement Circuit Board

Stray ground

resistance between boards

V=I*R

RIOUT

1kW

RITOV

1kW

System Data Readout Board

Line Receiver

(e.g. NCS2003)

+ADC

IIOUT

Figure 37. Remote Current Sensing

As shown in Figure 37, the RIOUT resistor is added

between the OUT pin and the REF pin to convert the voltage

output to a current output which is taken from the REF pin

to the readout board. This circuit is intended to function with

low potentials between the boards due to ground drops or

noise. The current output is simply the relationship of the

normal output voltage of the NCS21xR:

IOUT +VOUT

RIOUT

A resistor value of 1 kW for RIOUT is always a convenient

value as it provides 1 mA/V scaling.

On the readout board, for simplicity, RITOV can be equal

to R IOUT to provide identical voltage drops across both. It is

important to take into consideration that RITOV and RIOUT

add additional voltage drops in the current measurement

path. The current source can provide enough compliance to

overcome most ground voltage drop, stray voltages, and

noise. However, accuracy will degrade if noise or ground

drops exceed 1 V.

Shutting Down the NCS21xR

While the NCS21xR does not provide a shutdown pin, a

simple MOSFET, power switch, or logic gate can be used to

switch off the power to the NCS21xR and eliminate the

quiescent current. Note that the shunt input pins will always

have a current flow via the input and feedback resistors (total

resistance of each leg always equals slightly higher than

1MW). Also note that when powered, the shunt input pins

will exhibit the specified and well−matched typical bias

current of 39 mA. The shunt input pins support the rated

common mode voltage even when the NCS21xR does not

have power applied.

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE Y

DATE 11 DEC 2012

SCALE 2:1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRU-

SIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.

4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF

THE PLASTIC BODY AND DATUM H.

5. DATUMS A AND B ARE DETERMINED AT DATUM H.

6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE

LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.

7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.

ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN

EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDI-

TION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER

RADIUS OF THE FOOT.

Cddd M

123

654

XXXMG

XXX = Specific Device Code

M = Date Code*

G= Pb−Free Package

GENERIC

MARKING DIAGRAM*

STYLES ON PAGE 2

DIM MIN NOM MAX

MILLIMETERS

A−−− −−− 1.10

A1 0.00 −−− 0.10

ddd

b0.15 0.20 0.25

C0.08 0.15 0.22

D1.80 2.00 2.20

−−− −−− 0.043

0.000 −−− 0.004

0.006 0.008 0.010

0.003 0.006 0.009

0.070 0.078 0.086

MIN NOM MAX

INCHES

0.10 0.004

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present.

E1 1.15 1.25 1.35

e0.65 BSC

L0.26 0.36 0.46

2.00 2.10 2.20

0.045 0.049 0.053

0.026 BSC

0.010 0.014 0.018

0.078 0.082 0.086

(Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.65

0.66

DIMENSIONS: MILLIMETERS

0.30

PITCH

2.50

RECOMMENDED

TOP VIEW

SIDE VIEW END VIEW

bbb H

SEATING

PLANE

DETAIL A E

A2 0.70 0.90 1.00 0.027 0.035 0.039

L2 0.15 BSC 0.006 BSC

aaa 0.15 0.006

bbb 0.30 0.012

ccc 0.10 0.004

A-B D

aaa C

2X 3 TIPS

aaa H D

PLANE

DETAIL A

GAGE

ccc C

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

http://onsemi.com

October, 2002 − Rev. 0

Case Outline Number:

XXX

DOCUMENT NUMBER:

STATUS:

NEW STANDARD:

DESCRIPTION:

98ASB42985B

ON SEMICONDUCTOR STANDARD

SC−88/SC70−6/SOT−363

Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed

versions are uncontrolled except when stamped

“CONTROLLED COPY” in red.

PAGE 1 OF 3

STYLE 1:

PIN 1. EMITTER 2

2. BASE 2

3. COLLECTOR 1

4. EMITTER 1

5. BASE 1

6. COLLECTOR 2

STYLE 3:

CANCELLED

STYLE 2:

CANCELLED

STYLE 4:

PIN 1. CATHODE

2. CATHODE

3. COLLECTOR

4. EMITTER

5. BASE

6. ANODE

STYLE 5:

PIN 1. ANODE

2. ANODE

3. COLLECTOR

4. EMITTER

5. BASE

6. CATHODE

STYLE 6:

PIN 1. ANODE 2

2. N/C

3. CATHODE 1

4. ANODE 1

5. N/C

6. CATHODE 2

STYLE 7:

PIN 1. SOURCE 2

2. DRAIN 2

3. GATE 1

4. SOURCE 1

5. DRAIN 1

6. GATE 2

STYLE 8:

CANCELLED

STYLE 11:

PIN 1. CATHODE 2

2. CATHODE 2

3. ANODE 1

4. CATHODE 1

5. CATHODE 1

6. ANODE 2

STYLE 9:

PIN 1. EMITTER 2

2. EMITTER 1

3. COLLECTOR 1

4. BASE 1

5. BASE 2

6. COLLECTOR 2

STYLE 10:

PIN 1. SOURCE 2

2. SOURCE 1

3. GATE 1

4. DRAIN 1

5. DRAIN 2

6. GATE 2

STYLE 12:

PIN 1. ANODE 2

2. ANODE 2

3. CATHODE 1

4. ANODE 1

5. ANODE 1

6. CATHODE 2

STYLE 13:

PIN 1. ANODE

2. N/C

3. COLLECTOR

4. EMITTER

5. BASE

6. CATHODE

STYLE 14:

PIN 1. VREF

2. GND

3. GND

4. IOUT

5. VEN

6. VCC

STYLE 15:

PIN 1. ANODE 1

2. ANODE 2

3. ANODE 3

4. CATHODE 3

5. CATHODE 2

6. CATHODE 1

STYLE 17:

PIN 1. BASE 1

2. EMITTER 1

3. COLLECTOR 2

4. BASE 2

5. EMITTER 2

6. COLLECTOR 1

STYLE 16:

PIN 1. BASE 1

2. EMITTER 2

3. COLLECTOR 2

4. BASE 2

5. EMITTER 1

6. COLLECTOR 1

STYLE 18:

PIN 1. VIN1

2. VCC

3. VOUT2

4. VIN2

5. GND

6. VOUT1

STYLE 19:

PIN 1. I OUT

2. GND

3. GND

4. V CC

5. V EN

6. V REF

STYLE 20:

PIN 1. COLLECTOR

2. COLLECTOR

3. BASE

4. EMITTER

5. COLLECTOR

6. COLLECTOR

STYLE 22:

PIN 1. D1 (i)

2. GND

3. D2 (i)

4. D2 (c)

5. VBUS

6. D1 (c)

STYLE 21:

PIN 1. ANODE 1

2. N/C

3. ANODE 2

4. CATHODE 2

5. N/C

6. CATHODE 1

STYLE 23:

PIN 1. Vn

2. CH1

3. Vp

4. N/C

5. CH2

6. N/C

STYLE 24:

PIN 1. CATHODE

2. ANODE

3. CATHODE

4. CATHODE

5. CATHODE

6. CATHODE

STYLE 25:

PIN 1. BASE 1

2. CATHODE

3. COLLECTOR 2

4. BASE 2

5. EMITTER

6. COLLECTOR 1

STYLE 26:

PIN 1. SOURCE 1

2. GATE 1

3. DRAIN 2

4. SOURCE 2

5. GATE 2

6. DRAIN 1

STYLE 27:

PIN 1. BASE 2

2. BASE 1

3. COLLECTOR 1

4. EMITTER 1

5. EMITTER 2

6. COLLECTOR 2

STYLE 28:

PIN 1. DRAIN

2. DRAIN

3. GATE

4. SOURCE

5. DRAIN

6. DRAIN

STYLE 29:

PIN 1. ANODE

2. ANODE

3. COLLECTOR

4. EMITTER

5. BASE/ANODE

6. CATHODE

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE Y

DATE 11 DEC 2012

STYLE 30:

PIN 1. SOURCE 1

2. DRAIN 2

3. DRAIN 2

4. SOURCE 2

5. GATE 1

6. DRAIN 1

http://onsemi.com

October, 2002 − Rev. 0

Case Outline Number:

XXX

DOCUMENT NUMBER:

STATUS:

NEW STANDARD:

DESCRIPTION:

98ASB42985B

ON SEMICONDUCTOR STANDARD

SC−88/SC−70/SOT−363

Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed

versions are uncontrolled except when stamped

“CONTROLLED COPY” in red.

PAGE 2 OF 3

DOCUMENT NUMBER:

98ASB42985B

PAGE 3 OF 3

ISSUE REVISION DATE

HREVISION TO CHANGE LEGAL OWNER OF DOCUMENT FROM MOTOROLA TO

ON SEMICONDUCTOR. DELETED DIM “V” WAS 0.3 MM−0.4 MM/0.012−0.016 IN.

REQ BY G KWONG

14 JUN 01

JADDED STYLE 20. REQ BY M. ATANOVICH. 11 OCT 01

KUPDATED STYLE 15 WAS PIN 1, 2 AND 3: ANODE. PIN 4, 5, AND 6 CATHODE.

ADDED STYLE 21. REQ BY M. ATANOVICH

03 APR 02

LADDED STYLE 22. REQ BY S. CHANG 25 OCT 02

MADDED STYLE 23. REQ BY B. BLACKMON 04 DEC 02

NADDED STYLE 24. REQ BY B. BLACKMON 09 JAN 03

PADDED STYLE 25. REQ BY S. CHANG 09 MAY 03

RREMOVED THE “1” AFTER EMITTER. REQ BY S. CHANG 03 JUN 03

SADDED STYLE 26. REQ BY A. BINEYARD 18 AUG 03

TADDED STYLE 27. REQ. BY M. SWEADOR 23 OCT 2003

UADDED STYLES 28 AND 29. REQ. BY A. BINEYARD AND S. BACHMAN 22 JAN 2004

VADDED NOM VALUES AND CHANGED DIMS TO INDUSTRY STANDARD. REQ.

BY D. TRUHITTE

31 JAN 2005

WADDED STYLE 30. REQ. BY L. DELUCA. 26 JAN 2006

YUPDATED & REDREW TO JEDEC STANDARDS. REQ. BY D. TRUHITTE. 11 DEC 2012

December, 2012 − Rev. Y

Case Outline Number:

419B

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

UQFN10 1.4x1.8, 0.4P

CASE 488AT-01

ISSUE A

DATE 01 AUG 2007

ÉÉÉ

SCALE 5:1

0.05 C

SEATING

PLANE

NOTE 3

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS

3. DIMENSION b APPLIES TO PLATED TERMINAL

AND IS MEASURED BETWEEN 0.25 AND 0.30 MM

FROM TERMINAL.

4. COPLANARITY APPLIES TO THE EXPOSED PAD

AS WELL AS THE TERMINALS.

DIM MIN MAX

MILLIMETERS

1.40 BSC

0.40 BSC

0.45 0.60

0.30 0.50

0.00 0.05

PIN 1 REFERENCE

D A

0.10 C

0.05 C

0.10 CAB

10 X

e/2

L9 X

0.00 0.15

1.80 BSC

0.15 0.25

MOUNTING FOOTPRINT

10 X

PITCH

9 X

SCALE 20:1

0.663

0.0261

0.200

0.0079

0.400

0.0157

0.225

0.0089

2.100

0.0827

1.700

0.0669 0.563

0.0221

ǒmm

inchesǓ

10X

XX = Specific Device Code

M = Date Code

G= Pb-Free Package

(Note: Microdot may be in either location)

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb-Free indicator, “G” or microdot “ G”,

may or may not be present.

GENERIC

MARKING DIAGRAM*

XXMG

DETAIL A

Bottom View

(Optional)

ÉÉÉ

DETAIL B

Side View

(Optional)

EDGE OF PACKAGE

MOLD CMPD

EXPOSED Cu

L3 0.40 0.60

0.127 REFA3

TOP VIEW

SIDE VIEW

BOTTOM VIEW

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

http://onsemi.com

October, 2002 - Rev. 0

Case Outline Number:

XXX

DOCUMENT NUMBER:

STATUS:

NEW STANDARD:

DESCRIPTION:

98AON22493D

ON SEMICONDUCTOR STANDARD

10 PIN UQFN, 1.4 X 1.8, 0.4P

Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed

versions are uncontrolled except when stamped

“CONTROLLED COPY” in red.

PAGE 1 OF 2

DOCUMENT NUMBER:

98AON22493D

PAGE 2 OF 2

ISSUE REVISION DATE

ORELEASED FOR PRODUCTION. REQ. BY E SOTO. 28 APR 2006

AADDED DETAILS A AND B. REQ. BY E. SOTO. 01 AUG 2007

August, 2007 - Rev. 01A

Case Outline Number:

488AT

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

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