2SA1358
2006-11-09
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1358
Audio Frequency Power Amplifier Applications
Complementary to 2SC3421
Suitable for driver of 60 to 80 watts
High breakdown voltage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 120 V
Collector-emitter voltage VCEO 120 V
Emitter-base voltage VEBO 5 V
Collector current IC 1 A
Base current IB 100 mA
Ta = 25°C 1.5
Collector power
dissipation Tc = 25°C
PC 10
W
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA 2-8H1A
Weight: 0.82 g (typ.)
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2006-11-09
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Electrical Characteristics (Tc = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 120 V, IE = 0 100 nA
Emitter cut-off current IEBO V
EB = 5 V, IC = 0 100 nA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 120 V
Emitter-base breakdown voltage V (BR) EBO IE = 1 mA, IC = 0 5 V
DC current gain
hFE
(Note)
VCE = 5 V, IC = 100 mA 80 240
Collector-emitter saturation voltage VCE (sat) IC = 500 mA, IB = 50 mA 0.40 1.0 V
Base-emitter voltage VBE V
CE = 5 V, IC = 500 mA 0.77 1.0 V
Transition frequency fT V
CE = 5 V, IC = 100 mA 120 MHz
Collector output capacitance Cob V
CB = 10 V, IE = 0, f = 1 MHz 30 pF
Note: hFE classification O: 80 to 160, Y: 120 to 240
Marking
A1358 Part No. (or abbreviation code)
Characteristics indicator
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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Collector power dissipation PC (W)
Collector current IC (mA)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Collector current IC (mA)
hFE – IC
DC current gain hFE
Collector current IC (mA)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Base-emitter voltage VBE (V)
IC – VBE
Ambient temperature Ta (°C)
PC – Ta
Safe Operating Area
Collector current IC (mA)
Collector-emitter voltage VCE (V)
25
Common emitter
IC/IB = 10
3
3
0.03
0.1
0.3
30 100
Tc = 100°C
25
1000300 10
0.05
0.5
1
(1) Tc = Ta Infinite heat sink
(2) No heat sink
0 40 60 100 80 20
12
0
4
2
6
(1)
(2)
120 140 160
8
10
25
10
300
Common emitter
VCE = 5 V
30
50
100
1000
30 100 1000
Tc = 100°C
25
300 3
500
3 10 30 100 300
10
50
300
500
1000
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
100
3000
IC max (pulsed)*
IC max (continuous)
VCEO max
1 ms*
10 ms*
100 ms*
DC operation
Tc = 25°C
30
25
Common emitter
VCE = 5 V
1000
400
600
800
Tc = 100°C 25
200
0.2 0.4 0.8 1.0 0.6 0
0
1.2
0
0
Common emitter
Tc = 25°C
1200
600
6 8 12 10
10
3
4
15
7
IB = 1 mA
0
5
4 2
200
400
800
1000
2
2SA1358
2006-11-09
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RESTRICTIONS ON PRODUCT USE 20070701-EN
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
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document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
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may result from its use. No license is granted by implication or otherwise under any patents or other rights of
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Please contact your sales representative for product-by-product details in this document regarding RoHS
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that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.