VS-60EPS..PbF Series, VS-60EPS..-M3 Series
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Revision: 12-Feb-16 1Document Number: 94345
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High Voltage Input Rectifier Diode, 60 A
FEATURES
Very low forward voltage drop
150 °C max. operating junction temperature
Glass passivated pellet chip junction
Designed and qualified according to
JEDEC®-JESD 47
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Input rectification
Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
IF(AV) 60 A
VR800 V to 1200 V
VF at IF1.09 V
IFSM 1000 A
TJ max. 150 °C
Diode variation Single die
Base
cathode
2
1
3
Anode
Cathode
1
2
3
TO-247AC modified
Available
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Sinusoidal waveform 60 A
VRRM 800/1200 V
IFSM 1000 A
VF60 A, TJ = 25 °C 1.09 V
TJ-40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
IRRM
AT 150 °C
mA
VS-60EPS08PbF, VS-60EPS08-M3 800 900 1
VS-60EPS12PbF, VS-60EPS12-M3 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 118 °C, 180° conduction half sine wave 60
A
Maximum peak one cycle
non-repetitive surge current IFSM
10 ms sine pulse, rated VRRM applied 840
10 ms sine pulse, no voltage reapplied 1000
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 3530 A2s
10 ms sine pulse, no voltage reapplied 4220
Maximum I2t for fusing I2tt = 0.1 ms to 10 ms, no voltage reapplied 42 200 A2s
VS-60EPS..PbF Series, VS-60EPS..-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 12-Feb-16 2Document Number: 94345
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM
30 A, TJ = 25 °C 1.0 V
60 A, TJ = 25 °C 1.09 V
Forward slope resistance rtTJ = 150 °C 3.96 m
Threshold voltage VF(TO) 0.74 V
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VRRM
0.1 mA
TJ = 150 °C 1.0
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ, TStg -40 to +150 °C
Maximum thermal resistance,
unction to case RthJC DC operation 0.35
°C/W
Maximum thermal resistance,
junction to ambient RthJA 40
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth, and greased 0.2
Approximate weight 6g
0.21 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-247AC modified (JEDEC) 60EPS08
60EPS12
VS-60EPS..PbF Series, VS-60EPS..-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 12-Feb-16 3Document Number: 94345
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
70605040302010
150
140
130
120
110
100
0
30°
60° 90°
Ø
Conduction angle
VS-60EPS.. Series
RthJC (DC) = 0.35 K/W
120°
18
94345_01
Maximum Allowable Case
Temperature (°C)
Average Forward Current (A)
20 80 10040 60
0
30° 60°
18
DC
120°
Conduction period
Ø
VS-60EPS.. Series
RthJC (DC) = 0.35 K/W
90°
150
140
130
120
110
94345_02
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
10 20 60 7030 40 50
0
Ø
Conduction angle
18
120°
90°
60°
30°
RMS limit
VS-60EPS.. Series
TJ = 150 °C
90
70
50
30
10
80
60
40
20
0
94345_03
Maximum Average Forward
Power Loss (W)
Average Forward Current (A)
20 80 10040 600
DC
18
120°
90°
60°
30°
RMS limit
VS-60EPS.. Series
TJ = 150 °C
Conduction period
Ø
110
90
50
60
70
30
10
100
80
40
20
0
94345_04
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
VS-60EPS.. Series
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half
Cycle Current Pulse (N)
10 1001
200
300
500
700
400
600
800
900
94345_05
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
1.00.1
0.01
100
400
600
800
1000
1100
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
VS-60EPS.. Series
94345_06
10
900
700
500
300
200
VS-60EPS..PbF Series, VS-60EPS..-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 12-Feb-16 4Document Number: 94345
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Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0 1.0 2.0 3.0 4.00.5 1.5 2.5 3.5 4.5
1
10
1000
100
94345_07
VS-60EPS.. Series
TJ = 150 °C
TJ = 25 °C
0.01
0.1
1
0.0001 0.001 0.01 0.1 101
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal
Impedance (°C/W)
94345_08
VS-60EPS.. Series
Single pulse
Steady state value
(DC operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
VS-60EPS..PbF Series, VS-60EPS..-M3 Series
www.vishay.com Vishay Semiconductors
Revision: 12-Feb-16 5Document Number: 94345
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-60EPS08PbF 25 500 Antistatic plastic tubes
VS-60EPS08-M3 25 500 Antistatic plastic tubes
VS-60EPS12PbF 25 500 Antistatic plastic tubes
VS-60EPS12-M3 25 500 Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95541
Part marking information TO-247AC modified PbF www.vishay.com/doc?95255
TO-247AC modified -M3 www.vishay.com/doc?95442
SPICE model www.vishay.com/doc?95625
2- Current rating (60 = 60 A)
3- Circuit configuration:
4- Package:
5- Type of silicon:
6- Voltage code x 100 = VRRM
7-
E = single diode
P = TO-247AC modified
S = standard recovery rectifier
08 = 800 V
12 = 1200 V
Device code
62 43 5 7
60 E P S 12 PbFVS-
1
1- Vishay Semiconductors product
Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 20-Apr-17 1Document Number: 95541
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-247AC modified - 50 mils L/F
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerance per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension c and Q
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.65 5.31 0.183 0.209 D2 0.51 1.35 0.020 0.053
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.17 1.37 0.046 0.054 E1 13.46 - 0.53 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø K 0.254 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.34 0.065 0.092 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 Ø P 3.56 3.66 0.14 0.144
b5 2.59 3.38 0.102 0.133 Ø P1 - 7.39 - 0.291
c 0.38 0.89 0.015 0.035 Q 5.31 5.69 0.209 0.224
c1 0.38 0.84 0.015 0.033 R 4.52 5.49 0.178 0.216
D 19.71 20.70 0.776 0.815 3 S 5.51 BSC 0.217 BSC
D1 13.08 - 0.515 - 4
E
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
123
Q
D
A
A2
A
A
A1
C
A
(6) Ø P (Datum B)
Ø P1
D1 (4)
4
E1
View A - A
Thermal pad
D2
DDE E
CC
View B
(b1, b3, b5) Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Plating
0.10 AC
M M
Ø K BD
M M
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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