MAXIMUM RATINGS (TA=25°C) BCX51 BCX52 BCX53 UNITS
Collector-Base Voltage VCBO 45 60 100 V
Collector-Emitter Voltage VCEO 45 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC1.0 A
Peak Collector Current ICM 1.5 A
Base Current IB100 mA
Peak Base Current IBM 200 mA
Power Dissipation PD1.2 W
Operating and Storage
Junction Temperature TJ,Tstg -65 to +150 °C
Thermal Resistance ΘJA 104 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO VCB=30V 100 nA
ICBO VCB=30V, TA=125°C 10 µA
IEBO VEB=5.0V 100 nA
BVCBO IC=100µA (BCX51) 45 V
BVCBO IC=100µA (BCX52) 60 V
BVCBO IC=100µA (BCX53) 100 V
BVCEO IC=10mA (BCX51) 45 V
BVCEO IC=10mA (BCX52) 60 V
BVCEO IC=10mA (BCX53) 80 V
VCE(SAT) IC=500mA, IB=50mA 0.5 V
VBE(ON) VCE=2.0V, IB=500mA 1.0 V
hFE VCE=2.0V, IC=5.0mA 63
hFE VCE=2.0V, IC=150mA 63 250
hFE VCE=2.0V, IC=150mA
(BCX51-10, BCX52-10, BCX53-10) 63 160
hFE VCE=2.0V, IC=150mA
(BCX51-16, BCX52-16, BCX53-16) 100 250
hFE VCE=2.0V, IC=500mA 40
fTVCE=5.0V, IC=10mA, f=100MHz 50 MHz
BCX51
BCX52
BCX53
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-89 CASE
Central
Semiconductor Corp.
TM
R3 (20-May 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX51,
BCX52, and BCX53 types are PNP Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for high current general
purpose amplifier applications.
MARKING CODE: PLEASE SEE MARKING
CODE TABLE ON FOLLOWING PAGE