IAUT300N10S5N015
OptiMOS™-5 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current I
D
T
C
=25°C, V
GS
=10V
1)
300 A
T
C
=100 °C,
V
GS
=10 V
2)
247
Pulsed drain current
2)
I
D,pulse
T
C
=25 °C 1200
Avalanche energy, single pulse
2)
E
AS
I
D
=150 A 652 mJ
Avalanche current, single pulse I
AS
-300 A
Gate source voltage V
GS
-±20V
Power dissipation P
tot
T
C
=25 °C 375 W
Operating and storage temperature T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
VDS 100 V
RDS(on) 1.5 m
ID300 A
Product Summary
Type Package Marking
IAUT300N10S5N015 P/G-HSOF-8-1 5N10015
P/G-HSOF-8-1
8
1
1
8
Tab
Tab
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IAUT300N10S5N015
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case R
thJC
---0.4K/W
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA 100 - - V
Gate threshold voltage V
GS(th)
V
DS
=V
GS
, I
D
=275 µA 2.2 3.0 3.8
Zero gate voltage drain current I
DSS
V
DS
=100 V, V
GS
=0 V,
T
j
=25 °C -0.11µA
V
DS
=50 V, V
GS
=0 V,
T
j
=85 °C
2)
-120
Gate-source leakage current I
GSS
V
GS
=20 V, V
DS
=0 V - - 100 nA
Drain-source on-state resistance R
DS(on)
V
GS
=6 V, I
D
=75 A -1.62.0mΩ
V
GS
=10 V, I
D
=100 A -1.31.5
Values
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IAUT300N10S5N015
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
2)
Input capacitance C
iss
- 12316 16011 pF
Output capacitance C
oss
- 1920 2496
Reverse transfer capacitance C
rss
- 84 126
Turn-on delay time t
d(on)
-29-ns
Rise time t
r
-15-
Turn-off delay time t
d(off)
-70-
Fall time t
f
-48-
Gate Char
g
e Characteristics
2)
Gate to source charge Q
gs
-5268nC
Gate to drain charge Q
gd
-3350
Gate charge total Q
g
- 166 216
Gate plateau voltage V
plateau
-4.4-V
Reverse Diode
Diode continous forward current
2)
I
S
- - 300 A
Diode pulse current
2)
I
S,pulse
- - 1200
Diode forward voltage V
SD
V
GS
=0 V, I
F
=100 A,
T
j
=25 °C -0.91.3V
Reverse recovery time
2)
t
rr
-90-ns
Reverse recovery charge
2)
Q
rr
- 220 - nC
Values
V
GS
=0 V, V
DS
=50 V,
f=1 MHz
V
DD
=50 V, V
GS
=10 V,
I
D
=100 A, R
G
=3.5
V
DD
=50 V, I
D
=100 A,
V
GS
=0 to 10 V
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Current is limited by electromigration; with an R
thJC
= 0.4 K/W the chip is able to carry 350A at 25°C.
V
R
=50 V, I
F
=50A,
di
F
/dt=100 A/µs
T
C
=25 °C
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IAUT300N10S5N015
1 Power dissipation 2 Drain current
P
tot
= f(T
C
); V
GS
≥ 6 V I
D
= f(T
C
); V
GS
≥ 6 V
3 Safe operating area 4 Max. transient thermal impedance
I
D
= f(V
DS
); T
C
= 25 °C; D = 0 Z
thJC
= f(t
p
)
parameter: t
p
parameter: D=t
p
/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
10000
0.1 1 10 100
ID[A]
VDS [V]
single pulse
0.01
0.05
0.1
0.5
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
ZthJC [K/W]
tp[s]
0
100
200
300
400
0 50 100 150 200
Ptot [W]
TC[°C]
0
50
100
150
200
250
300
350
0 50 100 150 200
ID[A]
TC[°C]
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IAUT300N10S5N015
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
D
= f(V
DS
); T
j
= 25 °C R
DS(on)
= f(I
D
); T
j
= 25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
I
D
= f(V
GS
); V
DS
= 6V R
DS(on)
= f(T
j
); I
D
= 100 A; V
GS
= 10 V
parameter: T
j
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-60 -20 20 60 100 140 180
RDS(on) [m]
Tj[°C]
-55 °C
25 °C
175 °C
0
200
400
600
800
1000
1200
2468
ID[A]
VGS [V]
5 V
5.5 V
6 V
6.5 V
7 V
10 V
0
200
400
600
800
1000
1200
01234567
ID[A]
VDS [V]
5 V
7 V
5.5 V
6 V
6.5 V
10 V
1.2
1.4
1.6
1.8
2
2.2
0 50 100 150
RDS(on) [m]
ID[A]
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IAUT300N10S5N015
9 Typ. gate threshold voltage 10 Typ. capacitances
V
GS(th)
= f(T
j
); V
GS
= V
DS
C= f(V
DS
); V
GS
= 0 V; f = 1 MHz
parameter: I
D
11 Typical forward diode characteristics 12 Typ. avalanche characteristics
I
F
= f(V
SD
)I
AS
= f(t
AV
)
parameter: T
j
parameter: T
j(start)
25 °C
100 °C
150 °C
10
100
1000
1 10 100 1000
IAV [A]
tAV [µs]
25 °C
175 °C
100
101
102
103
104
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IF[A]
VSD [V]
Ciss
Coss
Crss
102
103
104
105
0 25 50 75 100
C[pF]
VDS [V]
275 µA
2750 µA
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
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IAUT300N10S5N015
13 Typical avalanche energy 14 Drain-source breakdown voltage
E
AS
= f(T
j
)V
BR(DSS)
= f(T
j
); I
D_typ
= 1 mA
parameter: I
D
15 Typ. gate charge 16 Gate charge waveforms
V
GS
= f(Q
gate
); I
D
= 100 A pulsed
parameter: V
DD
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
20 V
50 V
80 V
20 V50 V20 V50 V20 V
50 V
0
1
2
3
4
5
6
7
8
9
10
0 40 80 120 160
VGS [V]
Qgate [nC]
300 A
150 A
75 A
0
400
800
1200
1600
25 75 125 175
EAS [mJ]
Tj[°C]
V
GS
Q
gate
Q
gs
Q
gd
Q
g
V
GS
Q
gate
Q
gs
Q
gd
Q
g
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IAUT300N10S5N015
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2017
All Rights Reserved.
Legal Disclaime
r
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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IAUT300N10S5N015
Revision History
Version
Version 1.0
Date
2017-10-02
Changes
Final Data Sheet
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