Monolithic InGaP HBT MMIC Amplier
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Mini-Circuits®
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Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
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IF/RF MICROWAVE COMPONENTS
Page 2 of 4
Electrical Specications at 25°C and 65mA, unless noted
ERA-51SM+
Absolute Maximum Ratings
Parameter Ratings
Operating Temperature* -45°C to 85°C
Storage Temperature -65°C to 150°C
Operating Current 85mA
Power Dissipation 451mW
Input Power 13dBm
Note: Permanent damage may occur if any of these limits are exceeded.
These ratings are not intended for continuous normal operation.
1Case is dened as ground leads.
*Based on typical case temperature rise 5°C above ambient.
Parameter Min. Typ. Max. Units Cpk
Frequency Range* DC 4GHz
Gain f=0.1 GHz 17 18 19 dB ≥ 1.5
f=1 GHz 17.4
f=2 GHz 14 16.1 17.2
f=3 GHz 14.8
f=4 GHz 11.5 12.5 14.5
Magnitude of Gain Variation versus Temperature
(values are negative)
f=0.1 GHz .0012 .0024 dB/°C
f=1 GHz .002 .004
f=2 GHz .0027 .0054
f=3 GHz .0033 .0066
f=4 GHz .0043 .0086
Input Return Loss f=0.1 GHz 26 dB
f=1 GHz 29
f=2 GHz 32
f=3 GHz 28
f=4 GHz 25
Output Return Loss f=0.1 GHz 28 dB
f=1 GHz 24
f=2 GHz 21
f=3 GHz 24
f=4 GHz 21
Reverse Isolation f=1.0 GHz 19 22 dB
Output Power @ 1 dB compression f=0.1 GHz 18.3 dBm ≥ 1.33
f=1 GHz 16.5 18.1
f=2 GHz 17.8
f=3 GHz 16.9
f=4 GHz 14.8
Saturated Output Power
(at 3dB compression)
f=0.1 GHz 18 dBm
f=1 GHz 18
f=2 GHz 18
f=3 GHz 17
f=4 GHz 16
Output IP3 f=0.1 GHz 33.5 35.1 dBm ≥ 1.33
f=1 GHz 35.4
f=2 GHz 31 33.9
f=3 GHz 31
f=4 GHz 25 27.8
Noise Figure f=0.1 GHz 3.6 4.2 dB ≥ 1.33
f=1GHz 3.7
f=2 GHz 3.7 4.5
f=3 GHz 3.9
f=4 GHz 45
Group Delay f=1 GHz 100 psec
Recommended Device Operating Current 65 mA
Device Operating Voltage 4.2 4.5 4.8 V ≥ 1.5
Device Voltage Variation vs. Temperature at 65mA -3.2 mV/°C
Device Voltage Variation vs. Current at 25°C 5.8 mV/mA
Thermal Resistance, junction-to-case1154 °C/W
*Guaranteed specication DC-4 GHz. Low frequency cut off determined by external coupling capacitors.