Rev.2.00, Mar.01.2005, page 1 of 7
CR03AM-12
Thyristor
Low Power Use
REJ03G0352-0200
Rev.2.00
Mar.01.2005
Features
• IT (AV) : 0.3 A
• VDRM : 600 V
• IGT : 100 µA
• Non-Insulated Type
• Glass Passivation Type
Outline
2
1
3
PRSS0003EA-A
(Package name:TO-92)
1. Cathode
2. Anode
3. Gate
31
2
Applications
Leakage protector, timer, and gas igniter
Maximum Ratings
Voltage class
Parameter Symbol
12 Unit
Repetitive peak reverse voltage VRRM 600 V
Non-repetitive peak reverse v oltag e VRSM 800 V
DC reverse voltage VR(DC) 480 V
Repetitive peak off-state voltageNote1 V
DRM 600 V
Non-repetitive peak off-state voltageNote1 V
DSM 800 V
DC off-state voltageNote1 V
D(DC) 480 V
CR03AM-12
Rev.2.00, Mar.01.2005, page 2 of 7
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 0.47 A
Average on-state current IT (AV) 0.3 A
Commercial frequency, sine half wave
180° conduction, Ta = 47°C
Surge on-state current ITSM 20 A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
I2t for fusing I2t 1.6 A2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 0.5 W
Average gate power dissipation PG (AV) 0.1 W
Peak gate forward voltage VFGM 6 V
Peak gate reverse voltage VRGM 6 V
Peak gate forward current IFGM 0.3 A
Junction temperature Tj – 40 to +110 °C
Storage temperature Tstg – 40 to +125 °C
Mass — 0.23 g Typical value
Notes: 1. With gate to cathode resistance RGK = 1 kΩ.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak reverse current IRRM — — 0.1 mA Tj = 110°C, VRRM applied
Repetitive peak off-state current IDRM — — 0.1 mA
Tj = 110°C, VDRM applied,
RGK = 1 kΩ
On-state voltage VTM — — 1.8 V
Ta = 25°C, ITM = 4 A,
instantaneous value
Gate trigger voltage VGT — — 0.8 V
Tj = 25°C, VD = 6 V,
IT = 0.1 ANote3
Gate non-trigger voltage VGD 0.2 — — V
Tj = 110°C, VD = 1/2 VDRM,
RGK = 1 kΩ
Gate trigger current IGT 1 — 100Note2 µA Tj = 25°C, VD = 6 V,
IT = 0.1 ANote3
Holding current IH — 1.5 3 mA
Tj = 25°C, VD = 12 V,
RGK = 1 kΩ
Thermal resistance Rth (j-a) — — 180 °C/W Junction to ambient
Notes: 2. If special values of IGT are required, choose it em D or E from those listed in the table below if possible.
Item A B C D E
IGT (µA) 1 to 30 20 to 50 40 to 100 1 to 50 20 to 100
The above values do not include the current flowing throug h the 1 k Ω resistance between the gate and
cathode.
3 IGT, VGT measurement circuit.
3V
DC
I
GS
I
GT
6V
DC
60
Ω
V
GT
2
1
T
1k
Ω
R
GK
A
3
A2
V1
A1
S
witc
h
Switch 1 : IGT measurement
Switch 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
CR03AM-12
Rev.2.00, Mar.01.2005, page 3 of 7
Performance Curves
Maximum On-State Characteristics
On-State Current (A)
On-State Voltage (V)
Rated Surge On-State Current
Surge On-State Current (A)
Conduction Time (Cycles at 60Hz)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Time (s)
Gate Trigger Voltage vs.
Junction Temperature
Gate Trigger Voltage (V)
Junction Temperature (°C)
Gate Voltage (V)
Gate Current (mA)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Characteristics
× 100 (%)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
10
–2
10
0
2510
1
8
4
37 10
2
425
37
4
12
16
20
6
2
10
14
18
0
10
2
10
–2
10
0
10
1
10
1
7
5
3
2
10
–1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
57 23 57
10
–1
10
2
23 57 23 52357
V
FGM
= 6V
V
GT
= 0.8V
(Tj = 25°C)
I
GT
= 100µA
(Tj = 25°C)
P
GM
= 0.5W
V
GD
= 0.2V I
FGM
= 0.3A
2310
–3
5710
–2
23 5710
–1
23 5710
0
200
0
80
100
120
140
160
180
40
60
20
2310
0
5710
1
23 5710
2
23 5710
3
60–20–40 0 20 40 80 100
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
120
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0
–60–40–20 20 80 140120
0.2
0.5
0.9
06040 100
I
GT
(25°C) = 35µA
Ta = 25°C
Typical Example
Typical Example
Distribution
P
G(AV)
= 0.1W
CR03AM-12
Rev.2.00, Mar.01.2005, page 4 of 7
Maximum Average Power Dissipation
(Single-Phase Half Wave)
Average Power Dissipation (W)
Average On-State Current (A) Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Average Power Dissipation (W)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
Ambient Temperature (°C) Ambient Temperature (°C)Ambient Temperature (°C)
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Average Power Dissipation (W)
Average On-State Current (A)
160
120
60
40
20
140
100
80
000.2 0.40.1 0.3 0.5
θ = 30°
60°120°
90°180°
0.3
0.2
0.1
0.4
00.50.4
00.1 0.2 0.3
0.5
θ = 30°60°
120°
90°
180°
0.3
0.2
0.1
0.5
0.4
000.2 0.40.1 0.3 0.5
θ = 30°
60°
120°
90°
180°
0.3
0.2
0.1
0.5
0.4
000.2 0.40.1 0.3 0.5
θ = 30°60°90°
180°270°
DC
120°
160
120
60
40
20
140
100
80
00.5
00.2 0.40.1 0.3
160
120
60
40
20
140
100
80
000.2 0.40.1 0.3 0.5
60°120°180°θ = 30°90°
θ
360°
Resistive,
inductive loads
θ
360°
Resistive,
inductive loads
Natural convection
θ θ
360°
Resistive loads
θ θ
360°
Resistive loads
Natural convection
θ
360°
Resistive,
inductive loads
120°180°
DC
270°
90°
θ
360°
Resistive,
inductive loads
Natural convection
θ = 30°60°
CR03AM-12
Rev.2.00, Mar.01.2005, page 5 of 7
Breakover Voltage vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (kΩ)
× 100 (%)
Breakover Voltage (RGK = rkΩ)
Breakover Voltage (RGK = 1kΩ)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
× 100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
Holding Current vs.
Junction Temperature
Holding Current (mA)
Junction Temperature (°C)
Holding Current vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (kΩ)
× 100 (%)
Holding Current (RGK = rkΩ)
Holding Current (RGK = 1kΩ)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Voltage (V/µs)
× 100 (%)
Breakover Voltage (dv/dt = vV/µs)
Breakover Voltage (dv/dt = 1V/µs)
160
120
60
40
20
140
100
80
0120
–40 04080–20 20 60 100
RGK = 1kΩ
2310
–1
5710
0
23 5710
1
23 5710
2
160
0
80
100
120
140
40
60
20
Tj = 110°C
2310
0
5710
1
23 5710
2
23 5710
3
200
180
0
80
100
120
160
140
40
60
20
Tj = 25°C
RGK = 1kΩ
Tj = 110°C
2310
–2
10
–1
57 2 3 5710
0
235710
1
0
100
200
300
400
500 160
120
60
40
20
140
100
80
0120
–40 04080–20 20 60 100
60–20–40–60 0 20 40 80 100120140
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
RGK = 1kΩ
IGT(25°C) = 35µA
VD = 12V, Tj = 25°C
# 2
# 1
Junction Temperature (°C)
× 100 (%)
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Typical Example Typical Example
Typical Example
Typical Example
Distribution
Typical Example
I
GT(25°C) IH(1kΩ)
10µA
26µA1.0mA
1.1mA
# 1
# 2
CR03AM-12
Rev.2.00, Mar.01.2005, page 6 of 7
Gate Trigger Current (µA)
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Current Pulse Width (µs)
10
2
23410
0
5710
1
2435710
2
10
4
10
3
7
5
4
3
2
7
5
4
3
2
Tj = 25°C
# 1 # 2
Typical Example
IGT(DC)
16µA
65µA
# 1
# 2
CR03AM-12
Rev.2.00, Mar.01.2005, page 7 of 7
Package Dimensions
SC-43A 0.23g
MASS[Typ.]
TO-92PRSS0003EA-A
RENESAS CodeJEITA Package Code Package Name
Unit: mm
φ5.0Max
4.4
3.6
11.5Min 5.0Max
1.25
Circumscribed circle φ0.7
1.25
1.1
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Vinyl sack 500 Type name CR03AM-12
Lead form Vinyl sack 500 Type name – Lead forming code CR03AM-12-A6
Form A8 Taping 2000 Type name – TB CR03AM-12-TB
Note : Please confirm the specification about the shipping in detail.
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
RENESAS SALES OFFICES
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0