August 2012 I
© 2012 Microsemi Corporation
IGLOOe Low Power Flash FPGAs
with Flash*Freeze Technology
Features and Benefits
Low Power
• 1.2 V to 1.5 V Core Voltage Support for Low Power
• Supports Single-Voltage System Operation
• Low-Power Active FPGA Operation
• Flash*Freeze Technology Enables Ultra-Low Power
Consumption while Maintaining FPGA Content
• Flash*Freeze Pin Allows Easy Entry to / Exit from Ultra-Low-
Power Flash*Freeze Mode
High Capacity
• 600 k to 3 Million System Gates
• 108 to 504 kbits of True Dual-Port SRAM
• Up to 620 User I/Os
Reprogrammable Flash Technology
• 130-nm, 7-Layer Metal (6 Copper), Flash-Based CMOS
Process
• Live-at-Power-Up (LAPU) Level 0 Support
• Single-Chip Solution
• Retains Programmed Design when Powered Off
• 250 MHz (1.5 V systems) and 160 MHz (1.2 V systems) System
Performance
In-System Programming (ISP) and Security
• ISP Using On-Chip 128-Bit Advanced Encryption Standard
(AES) Decryption via JTAG (IEEE 1532–compliant)
• FlashLock® Designed to Secure FPGA Contents
High-Performance Routing Hierarchy
• Segmented, Hierarchical Routing and Clock Structure
• High-Performance, Low-Skew Global Network
• Architecture Supports Ultra-High Utilization
Pro (Professional) I/O
• 700 Mbps DDR, LVDS-Capable I/Os
•1.2
V, 1.5 V, 1.8 V, 2.5 V, and 3.3 V Mixed-Voltage Operation
• Bank-Selectable I/O Voltages—Up to 8 Banks per Chip
• Single-Ended I/O Standards: LVTTL, LVCMOS 3.3 V /
2.5 V / 1.8 V / 1.5 V / 1.2 V, 3.3 V PCI / 3.3 V PCI-X, and
LVCMOS 2.5 V / 5.0 V Input
• Differential I/O Standards: LVPECL, LVDS, B-LVDS, and
M-LVDS
• Voltage-Referenced I/O Standards: GTL+ 2.5 V / 3.3 V, GTL
2.5 V / 3.3 V, HSTL Class I and II, SSTL2 Class I and II, SSTL3
Class I and II
• Wide Range Power Supply Voltage Support per JESD8-B,
Allowing I/Os to Operate from 2.7 V to 3.6 V
• Wide Range Power Supply Voltage Support per JESD8-12,
Allowing I/Os to Operate from 1.14 V to 1.575 V
• I/O Registers on Input, Output, and Enable Paths
• Hot-Swappable and Cold-Sparing I/Os
• Programmable Output Slew Rate and Drive Strength
• Programmable Input Delay
• Schmitt Trigger Option on Single-Ended Inputs
• Weak Pull-Up/-Down
• IEEE 1149.1 (JTAG) Boundary Scan Test
• Pin-Compatible Packages across the IGLOO®e Family
Clock Conditioning Circuit (CCC) and PLL
• Six CCC Blocks, Each with an Integrated PLL
• Configurable Phase Shift, Multiply/Divide, Delay Capabilities,
and External Feedback
• Wide Input Frequency Range (1.5 MHz up to 250 MHz)
Embedded Memory
• 1 kbit of FlashROM User Nonvolatile Memory
• SRAMs and FIFOs with Variable-Aspect-Ratio 4,608-Bit RAM
Blocks (×1, ×2, ×4, ×9, and ×18 organizations available)
• True Dual-Port SRAM (except ×18)
ARM Processor Support in IGLOOe FPGAs
• M1 IGLOOe Devices—Cortex™-M1 Soft Processor Available
with or without Debug
Table 1 • IGLOOe Product Family
IGLOOe Devices AGLE600 AGLE3000
ARM-Enabled IGLOOe Devices M1AGLE3000
System Gates 600,000 3,000,000
VersaTiles (D-flip-flops) 13,824 75,264
Quiescent Current (typical) in Flash*Freeze Mode (µW) 49 137
RAM kbits (1,024 bits) 108 504
4,608-Bit Blocks 24 112
FlashROM Kbits (1,024 bits) 1 1
Secure (AES) ISP Yes Yes
CCCs with Integrated PLLs 6 6
VersaNet Globals 118 18
I/O Banks 8 8
Maximum User I/Os 270 620
Package Pins
FBGA FG256, FG484 FG484, FG896
Notes:
1. Refer to the Cortex-M1 Handbook for more information.
2. Six chip (main) and twelve quadrant global networks are available.
3. For devices supporting lower densities, refer to the IGLOO Low-Power Flash FPGAs with Flash*Freeze Technology datasheet.
Revision 11
IGLOOe Low Power Flash FPGAs
II Revision 11
I/Os Per Package 1
IGLOOe FPGAs Package Sizes Dimensions
IGLOOe Device Status
IGLOOe Devices AGLE600 AGLE3000
ARM-Enabled IGLOOe Devices M1AGLE3000
Package
I/O Types
Single-Ended
I/O1
Differential
I/O Pairs
Single-Ended
I/O1
Differential
I/O Pairs
FG256 165 79 – –
FG484 270 135 341 168
FG896 – – 620 310
Notes:
1. When considering migrating your design to a lower- or higher-density device, refer to the IGLOOe FPGA Fabric User’s Guide to
ensure compliance with design and board migration requirements.
2. Each used differential I/O pair reduces the number of single-ended I/Os available by two.
3. For AGLE3000 devices, the usage of certain I/O standards is limited as follows:
– SSTL3(I) and (II): up to 40 I/Os per north or south bank
– LVPECL / GTL+ 3.3 V / GTL 3.3 V: up to 48 I/Os per north or south bank
– SSTL2(I) and (II) / GTL+ 2.5 V/ GTL 2.5 V: up to 72 I/Os per north or south bank
4. FG256 and FG484 are footprint-compatible packages.
5. When using voltage-referenced I/O standards, one I/O pin should be assigned as a voltage-referenced pin (VREF) per
minibank (group of I/Os).
6. When the Flash*Freeze pin is used to directly enable Flash*Freeze mode and not as a regular I/O, the number of single-ended
user I/Os available is reduced by one.
7. "G" indicates RoHS-compliant packages. Refer to "IGLOOe Ordering Information" on page III for the location of the "G" in the
part number.
Package FG256 FG484 FG896
Length × Width (mm × mm) 17 × 17 23 × 23 31 × 31
Nominal Area (mm2) 289 529 961
Pitch (mm) 1 1 1
Height (mm) 1.6 2.23 2.23
IGLOOe Devices Status M1 IGLOOe Devices Status
AGLE600 Production
AGLE3000 Production M1AGLE3000 Production
IGLOOe Low Power Flash FPGAs
Revision 11 III
IGLOOe Ordering Information
Note: Marking Information: IGLOO V2 devices do not have V2 marking, but IGLOO V5 devices are marked accordingly.
V2
Security Feature
Y = Device Includes License to Implement IP Based on the
Cryptography Research, Inc. (CRI) Patent Portfolio
AGLE3000 FG
_
Part Number
Package Type
FG =Fine Pitch Ball Grid Array (1.0 mm pitch)
896 I
Y
Package Lead Count
Application (Temperature Range)
Blank = Commercial (0°C to +70°C Ambient Temperature)
I=Industrial (–40°C to +85°C Ambient Temperature)
PP = Pre-Production
ES = Engineering Sample (Room Temperature Only)
600,000 Syst em Gat es
AGLE600 =
3,000,000 System Gates
AGLE3000 =
G
Lead-Free Packaging
Blank = St an dard Pack ag in g
G = RoHS-Compliant Packaging
IGLOOe Devices
3,000,000 System Gates
2 = 1.2 V to 1.5 V
5 = 1.5 V only
IGLOOe Devices with Cortex-M1
M1AGLE3000 =
IGLOOe Low Power Flash FPGAs
IV Revision 11
Temperature Grade Offerings
References made to IGLOOe devices also apply to ARM-enabled IGLOOe devices. The ARM-enabled part numbers start with M1
(Cortex-M1).
Contact your local Microsemi SoC Products Group representative for device availability:
http://www.microsemi.com/soc/contact/default.aspx.
Package
AGLE600 AGLE3000
M1AGLPE3000
FG256 C, I –
FG484 C, I C, I
FG896 – C, I
Note: C = Commercial temperature range: 0°C to 70°C ambient temperature.
I = Industrial temperature range: –40°C to 85°C ambient temperature.
IGLOOe Low Power Flash FPGAs
Revision 11 V
Table of Contents
IGLOOe Device Family Overview
General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-1
IGLOOe DC and Switching Characteristics
General Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-1
Calculating Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-7
User I/O Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-16
VersaTile Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-82
Global Resource Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-88
Clock Conditioning Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-91
Embedded SRAM and FIFO Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-93
Embedded FlashROM Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-107
JTAG 1532 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-108
Pin Descriptions and Packaging
Supply Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-1
User-Defined Supply Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-2
User Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-3
JTAG Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-4
Special Function Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-5
Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-5
Related Documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3-6
Package Pin Assignments
FG256 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-1
FG484 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-5
FG896 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4-16
Datasheet Information
List of Changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-1
Datasheet Categories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-8
Safety Critical, Life Support, and High-Reliability Applications Policy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5-8
Revision 11 1-1
1 – IGLOOe Device Family Overview
General Description
The IGLOOe family of flash FPGAs, based on a 130-nm flash process, offers the lowest power FPGA, a
single-chip solution, small footprint packages, reprogrammability, and an abundance of advanced
features.
The Flash*Freeze technology used in IGLOOe devices enables entering and exiting an ultra-low power
mode while retaining SRAM and register data. Flash*Freeze technology simplifies power management
through I/O and clock management with rapid recovery to operation mode.
The Low Power Active capability (static idle) allows for ultra-low power consumption while the IGLOOe
device is completely functional in the system. This allows the IGLOOe device to control system power
management based on external inputs (e.g., scanning for keyboard stimulus) while consuming minimal
power.
Nonvolatile flash technology gives IGLOOe devices the advantage of being a secure, low power, single-
chip solution that is live at power-up (LAPU). IGLOOe is reprogrammable and offers time-to-market
benefits at an ASIC-level unit cost.
These features enable designers to create high-density systems using existing ASIC or FPGA design
flows and tools.
IGLOOe devices offer 1 kbit of on-chip, programmable, nonvolatile FlashROM storage as well as clock
conditioning circuitry based on 6 integrated phase-locked loops (PLLs). IGLOOe devices have up to 3
million system gates, supported with up to 504 kbits of true dual-port SRAM and up to 620 user I/Os.
M1 IGLOOe devices support the high-performance, 32-bit Cortex-M1 processor developed by ARM for
implementation in FPGAs. Cortex-M1 is a soft processor that is fully implemented in the FPGA fabric. It
has a three-stage pipeline that offers a good balance between low power consumption and speed when
implemented in an M1 IGLOOe device. The processor runs the ARMv6-M instruction set, has a
configurable nested interrupt controller, and can be implemented with or without the debug block. Cortex-
M1 is available for free from Microsemi for use in M1 IGLOOe FPGAs.
The ARM-enabled devices have Microsemi ordering numbers that begin with M1AGLE and do not
support AES decryption.
Flash*Freeze Technology
The IGLOOe device offers unique Flash*Freeze technology, allowing the device to enter and exit ultra-
low power Flash*Freeze mode. IGLOOe devices do not need additional components to turn off I/Os or
clocks while retaining the design information, SRAM content, and registers. Flash*Freeze technology is
combined with in-system programmability, which enables users to quickly and easily upgrade and update
their designs in the final stages of manufacturing or in the field. The ability of IGLOOe V2 devices to
support a wide range of core voltage (1.2 V to 1.5 V) allows further reduction in power consumption, thus
achieving the lowest total system power.
When the IGLOOe device enters Flash*Freeze mode, the device automatically shuts off the clocks and
inputs to the FPGA core; when the device exits Flash*Freeze mode, all activity resumes and data is
retained.
The availability of low power modes, combined with reprogrammability, a single-chip and single-voltage
solution, and availability of small-footprint, high pin-count packages, make IGLOOe devices the best fit
for portable electronics.
IGLOOe Device Family Overview
1-2 Revision 11
Flash Advantages
Low Power
Flash-based IGLOOe devices exhibit power characteristics similar to those of an ASIC, making them an
ideal choice for power-sensitive applications. IGLOOe devices have only a very limited power-on current
surge and no high-current transition period, both of which occur on many FPGAs.
IGLOOe devices also have low dynamic power consumption to further maximize power savings; power is
even further reduced by the use of a 1.2 V core voltage.
Low dynamic power consumption, combined with low static power consumption and Flash*Freeze
technology, gives the IGLOOe device the lowest total system power offered by any FPGA.
Security
The nonvolatile, flash-based IGLOOe devices do not require a boot PROM, so there is no vulnerable
external bitstream that can be easily copied. IGLOOe devices incorporate FlashLock, which provides a
unique combination of reprogrammability and design security without external overhead, advantages that
only an FPGA with nonvolatile flash programming can offer.
IGLOOe devices utilize a 128-bit flash-based lock and a separate AES key to provide the highest level of
protection in the FPGA industry for programmed intellectual property and configuration data. In addition,
all FlashROM data in IGLOOe devices can be encrypted prior to loading, using the industry-leading
AES-128 (FIPS192) bit block cipher encryption standard. AES was adopted by the National Institute of
Standards and Technology (NIST) in 2000 and replaces the 1977 DES standard. IGLOOe devices have a
built-in AES decryption engine and a flash-based AES key that make them the most comprehensive
programmable logic device security solution available today. IGLOOe devices with AES-based security
provide a high level of protection for remote field updates over public networks such as the Internet, and
are designed to ensure that valuable IP remains out of the hands of system overbuilders, system cloners,
and IP thieves. The contents of a programmed IGLOOe device cannot be read back, although secure
design verification is possible.
Security, built into the FPGA fabric, is an inherent component of the IGLOOe family. The flash cells are
located beneath seven metal layers, and many device design and layout techniques have been used to
make invasive attacks extremely difficult. The IGLOOe family, with FlashLock and AES security, is unique
in being highly resistant to both invasive and noninvasive attacks. Your valuable IP is protected with
industry-standard security, making remote ISP possible. An IGLOOe device provides the best available
security for programmable logic designs.
Single Chip
Flash-based FPGAs store their configuration information in on-chip flash cells. Once programmed, the
configuration data is an inherent part of the FPGA structure, and no external configuration data needs to
be loaded at system power-up (unlike SRAM-based FPGAs). Therefore, flash-based IGLOOe FPGAs do
not require system configuration components such as EEPROMs or microcontrollers to load device
configuration data. This reduces bill-of-materials costs and PCB area, and increases security and system
reliability.
Live at Power-Up
Flash-based IGLOOe devices support Level 0 of the LAPU classification standard. This feature helps in
system component initialization, execution of critical tasks before the processor wakes up, setup and
configuration of memory blocks, clock generation, and bus activity management. The LAPU feature of
flash-based IGLOOe devices greatly simplifies total system design and reduces total system cost, often
eliminating the need for CPLDs and clock generation PLLs. In addition, glitches and brownouts in system
power will not corrupt the IGLOOe device's flash configuration, and unlike SRAM-based FPGAs, the
device will not have to be reloaded when system power is restored. This enables the reduction or
complete removal of the configuration PROM, expensive voltage monitor, brownout detection, and clock
generator devices from the PCB design. Flash-based IGLOOe devices simplify total system design and
reduce cost and design risk while increasing system reliability and improving system initialization time.
IGLOOe Low Power Flash FPGAs
Revision 11 1-3
Reduced Cost of Ownership
Advantages to the designer extend beyond low unit cost, performance, and ease of use. Unlike SRAM-
based FPGAs, Flash-based IGLOOe devices allow all functionality to be live at power-up; no external
boot PROM is required. On-board security mechanisms prevent access to all the programming
information and enable secure remote updates of the FPGA logic. Designers can perform secure remote
in-system reprogramming to support future design iterations and field upgrades with confidence that
valuable intellectual property cannot be compromised or copied. Secure ISP can be performed using the
industry-standard AES algorithm. The IGLOOe family device architecture mitigates the need for ASIC
migration at higher user volumes. This makes the IGLOOe family a cost-effective ASIC replacement
solution, especially for applications in the consumer, networking/communications, computing, and
avionics markets.
Firm-Error Immunity
Firm errors occur most commonly when high-energy neutrons, generated in the upper atmosphere, strike
a configuration cell of an SRAM FPGA. The energy of the collision can change the state of the
configuration cell and thus change the logic, routing, or I/O behavior in an unpredictable way. These
errors are impossible to prevent in SRAM FPGAs. The consequence of this type of error can be a
complete system failure. Firm errors do not exist in the configuration memory of IGLOOe flash-based
FPGAs. Once it is programmed, the flash cell configuration element of IGLOOe FPGAs cannot be altered
by high-energy neutrons and is therefore immune to them. Recoverable (or soft) errors occur in the user
data SRAM of all FPGA devices. These can easily be mitigated by using error detection and correction
(EDAC) circuitry built into the FPGA fabric.
Advanced Flash Technology
The IGLOOe family offers many benefits, including nonvolatility and reprogrammability, through an
advanced flash-based, 130-nm LVCMOS process with seven layers of metal. Standard CMOS design
techniques are used to implement logic and control functions. The combination of fine granularity,
enhanced flexible routing resources, and abundant flash switches allows for very high logic utilization
without compromising device routability or performance. Logic functions within the device are
interconnected through a four-level routing hierarchy.
IGLOOe family FPGAs utilize design and process techniques to minimize power consumption in all
modes of operation.
Advanced Architecture
The proprietary IGLOOe architecture provides granularity comparable to standard-cell ASICs. The
IGLOOe device consists of five distinct and programmable architectural features (Figure 1-1 on page 4):
• Flash*Freeze technology
• FPGA VersaTiles
• Dedicated FlashROM
• Dedicated SRAM/FIFO memory
• Extensive CCCs and PLLs
• Pro I/O structure
The FPGA core consists of a sea of VersaTiles. Each VersaTile can be configured as a three-input logic
function, a D-flip-flop (with or without enable), or a latch by programming the appropriate flash switch
interconnections. The versatility of the IGLOOe core tile as either a three-input lookup table (LUT)
equivalent or a D-flip-flop/latch with enable allows for efficient use of the FPGA fabric. The VersaTile
capability is unique to the Microsemi ProASIC® family of third-generation-architecture flash FPGAs.
VersaTiles are connected with any of the four levels of routing hierarchy. Flash switches are distributed
throughout the device to provide nonvolatile, reconfigurable interconnect programming. Maximum core
utilization is possible for virtually any design.
IGLOOe Device Family Overview
1-4 Revision 11
Flash*Freeze Technology
The IGLOOe device has an ultra-low power static mode, called Flash*Freeze mode, which retains all
SRAM and register information and can still quickly return to normal operation. Flash*Freeze technology
enables the user to quickly (within 1 µs) enter and exit Flash*Freeze mode by activating the
Flash*Freeze pin while all power supplies are kept at their original values. In addition, I/Os and global
I/Os can still be driven and can be toggling without impact on power consumption, clocks can still be
driven or can be toggling without impact on power consumption, and the device retains all core registers,
SRAM information, and states. I/O states are tristated during Flash*Freeze mode or can be set to a
certain state using weak pull-up or pull-down I/O attribute configuration. No power is consumed by the
I/O banks, clocks, JTAG pins, or PLL in this mode.
Flash*Freeze technology allows the user to switch to active mode on demand, thus simplifying the power
management of the device.
The Flash*Freeze pin (active low) can be routed internally to the core to allow the user's logic to decide
when it is safe to transition to this mode. It is also possible to use the Flash*Freeze pin as a regular I/O if
Flash*Freeze mode usage is not planned, which is advantageous because of the inherent low power
static and dynamic capabilities of the IGLOOe device. Refer to Figure 1-2 for an illustration of
entering/exiting Flash*Freeze mode.
Figure 1-1 • IGLOOe Device Architecture Overview
Figure 1-2 • IGLOOe Flash*Freeze Mode
4,608-Bit Dual-Port SRAM
or FIFO Block
VersaTile
RAM Block
CCC
Pro I/Os
4,608-Bit Dual-Port SRAM
or FIFO Block
RAM Block
ISP AES
Decryption*
User Nonvolatile
FlashRom
Flash*Freeze
Technology
Charge
Pumps
IGLOOe
FPGA
Flash*Freeze
Mode Control
Flash*Freeze Pin
IGLOOe Low Power Flash FPGAs
Revision 11 1-5
VersaTiles
The IGLOOe core consists of VersaTiles, which have been enhanced beyond the ProASICPLUS® core
tiles. The IGLOOe VersaTile supports the following:
• All 3-input logic functions—LUT-3 equivalent
• Latch with clear or set
• D-flip-flop with clear or set
• Enable D-flip-flop with clear or set
Refer to Figure 1-3 for VersaTile configurations.
User Nonvolatile FlashROM
IGLOOe devices have 1 kbit of on-chip, user-accessible, nonvolatile FlashROM. The FlashROM can be
used in diverse system applications:
• Internet protocol addressing (wireless or fixed)
• System calibration settings
• Device serialization and/or inventory control
• Subscription-based business models (for example, set-top boxes)
• Secure key storage for secure communications algorithms
• Asset management/tracking
• Date stamping
• Version management
The FlashROM is written using the standard IGLOOe IEEE 1532 JTAG programming interface. The core
can be individually programmed (erased and written), and on-chip AES decryption can be used
selectively to securely load data over public networks, as in security keys stored in the FlashROM for a
user design.
The FlashROM can be programmed via the JTAG programming interface, and its contents can be read
back either through the JTAG programming interface or via direct FPGA core addressing. Note that the
FlashROM can only be programmed from the JTAG interface and cannot be programmed from the
internal logic array.
The FlashROM is programmed as 8 banks of 128 bits; however, reading is performed on a byte-by-byte
basis using a synchronous interface. A 7-bit address from the FPGA core defines which of the 8 banks
and which of the 16 bytes within that bank are being read. The three most significant bits (MSBs) of the
FlashROM address determine the bank, and the four least significant bits (LSBs) of the FlashROM
address define the byte.
The IGLOOe development software solutions, Libero® Integrated Design Environment (IDE) and
Designer, have extensive support for the FlashROM. One such feature is auto-generation of sequential
programming files for applications requiring a unique serial number in each part. Another feature allows
the inclusion of static data for system version control. Data for the FlashROM can be generated quickly
and easily using Libero IDE and Designer software tools. Comprehensive programming file support is
also included to allow for easy programming of large numbers of parts with differing FlashROM contents.
Figure 1-3 • VersaTile Configurations
X1
Y
X2
X3
LUT-3
Data Y
CLK
Enable
CLR
D-FF
Data Y
CLK
CLR
D-FF
LUT-3 Equivalent D-Flip-Flop with Clear or Set Enable D-Flip-Flop with Clear or Set
IGLOOe Device Family Overview
1-6 Revision 11
SRAM and FIFO
IGLOOe devices have embedded SRAM blocks along their north and south sides. Each variable-aspect-
ratio SRAM block is 4,608 bits in size. Available memory configurations are 256×18, 512×9, 1k×4, 2k×2,
and 4k×1 bits. The individual blocks have independent read and write ports that can be configured with
different bit widths on each port. For example, data can be sent through a 4-bit port and read as a single
bitstream. The embedded SRAM blocks can be initialized via the device JTAG port (ROM emulation
mode) using the UJTAG macro.
In addition, every SRAM block has an embedded FIFO control unit. The control unit allows the SRAM
block to be configured as a synchronous FIFO without using additional core VersaTiles. The FIFO width
and depth are programmable. The FIFO also features programmable Almost Empty (AEMPTY) and
Almost Full (AFULL) flags in addition to the normal Empty and Full flags. The embedded FIFO control
unit contains the counters necessary for generation of the read and write address pointers. The
embedded SRAM/FIFO blocks can be cascaded to create larger configurations.
PLL and CCC
IGLOOe devices provide designers with very flexible clock conditioning capabilities. Each member of the
IGLOOe family contains six CCCs, each with an integrated PLL.
The six CCC blocks are located at the four corners and the centers of the east and west sides. One CCC
(center west side) has a PLL.
The inputs of the six CCC blocks are accessible from the FPGA core or from one of several inputs
located near the CCC that have dedicated connections to the CCC block.
The CCC block has these key features:
• Wide input frequency range (fIN_CCC) = 1.5 MHz up to 250 MHz
• Output frequency range (fOUT_CCC) = 0.75 MHz up to 250 MHz
• 2 programmable delay types for clock skew minimization
• Clock frequency synthesis
Additional CCC specifications:
• Internal phase shift = 0°, 90°, 180°, and 270°. Output phase shift depends on the output divider
configuration.
• Output duty cycle = 50% ± 1.5% or better
• Low output jitter: worst case < 2.5% × clock period peak-to-peak period jitter when single global
network used
• Maximum acquisition time is 300 µs
• Exceptional tolerance to input period jitter—allowable input jitter is up to 1.5 ns
• Four precise phases; maximum misalignment between adjacent phases of 40 ps × 250 MHz /
fOUT_CCC
Global Clocking
IGLOOe devices have extensive support for multiple clocking domains. In addition to the CCC and PLL
support described above, there is a comprehensive global clock distribution network.
Each VersaTile input and output port has access to nine VersaNets: six chip (main) and three quadrant
global networks. The VersaNets can be driven by the CCC or directly accessed from the core via
multiplexers (MUXes). The VersaNets can be used to distribute low-skew clock signals or for rapid
distribution of high-fanout nets.
IGLOOe Low Power Flash FPGAs
Revision 11 1-7
Pro I/Os with Advanced I/O Standards
The IGLOOe family of FPGAs features a flexible I/O structure, supporting a range of voltages (1.2 V,
1.5 V, 1.8 V, 2.5 V, 3.0 V wide range, and 3.3 V). IGLOOe FPGAs support 19 different I/O standards,
including single-ended, differential, and voltage-referenced. The I/Os are organized into banks, with eight
banks per device (two per side). The configuration of these banks determines the I/O standards
supported. Each I/O bank is subdivided into VREF minibanks, which are used by voltage-referenced
I/Os. VREF minibanks contain 8 to 18 I/Os. All the I/Os in a given minibank share a common VREF line.
Therefore, if any I/O in a given VREF minibank is configured as a VREF pin, the remaining I/Os in that
minibank will be able to use that reference voltage.
Each I/O module contains several input, output, and enable registers. These registers allow the
implementation of the following:
• Single-Data-Rate applications (e.g., PCI 66 MHz, bidirectional SSTL 2 and 3, Class I and II)
• Double-Data-Rate applications (e.g., DDR LVDS, B-LVDS, and M-LVDS I/Os for point-to-point
communications, and DDR 200 MHz SRAM using bidirectional HSTL Class II).
IGLOOe banks support M-LVDS with 20 multi-drop points.
Hot-swap (also called hot-plug, or hot-insertion) is the operation of hot-insertion or hot-removal of a card
in a powered-up system.
Cold-sparing (also called cold-swap) refers to the ability of a device to leave system data undisturbed
when the system is powered up, while the component itself is powered down, or when power supplies
are floating.
Wide Range I/O Support
IGLOOe devices support JEDEC-defined wide range I/O operation. IGLOOe devices support both the
JESD8-B specification, covering 3.0 V and 3.3 V supplies, for an effective operating range of 2.7 V to
3.6 V, and JESD8-12 with its 1.2 V nominal, supporting an effective operating range of 1.14 V to 1.575 V.
Wider I/O range means designers can eliminate power supplies or power conditioning components from
the board or move to less costly components with greater tolerances. Wide range eases I/O bank
management and provides enhanced protection from system voltage spikes, while providing the flexibility
to easily run custom voltage applications.
Specifying I/O States During Programming
You can modify the I/O states during programming in FlashPro. In FlashPro, this feature is supported for
PDB files generated from Designer v8.5 or greater. See the FlashPro User’s Guide for more information.
Note: PDB files generated from Designer v8.1 to Designer v8.4 (including all service packs) have
limited display of Pin Numbers only.
1. Load a PDB from the FlashPro GUI. You must have a PDB loaded to modify the I/O states during
programming.
2. From the FlashPro GUI, click PDB Configuration. A FlashPoint – Programming File Generator
window appears.
3. Click the Specify I/O States During Programming button to display the Specify I/O States
During Programming dialog box.
4. Sort the pins as desired by clicking any of the column headers to sort the entries by that header.
Select the I/Os you wish to modify (Figure 1-4 on page 1-8).
5. Set the I/O Output State. You can set Basic I/O settings if you want to use the default I/O settings
for your pins, or use Custom I/O settings to customize the settings for each pin. Basic I/O state
settings:
1 – I/O is set to drive out logic High
0 – I/O is set to drive out logic Low
Last Known State – I/O is set to the last value that was driven out prior to entering the
programming mode, and then held at that value during programming
Z -Tri-State: I/O is tristated
IGLOOe Device Family Overview
1-8 Revision 11
6. Click OK to return to the FlashPoint – Programming File Generator window.
Note: I/O States During programming are saved to the ADB and resulting programming files after
completing programming file generation.
Figure 1-4 • I/O States During Programming Window
Revision 11 2-1
2 – IGLOOe DC and Switching Characteristics
General Specifications
Operating Conditions
Stresses beyond those listed in Tabl e 2- 1 may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings are stress ratings only; functional operation of the device at these or any
other conditions beyond those listed under the Recommended Operating Conditions specified in
Table 2-2 on page 2-2 is not implied.
Table 2-1 • Absolute Maximum Ratings
Symbol Parameter Limits Units
VCC DC core supply voltage –0.3 to 1.65 V
VJTAG JTAG DC voltage –0.3 to 3.75 V
VPUMP Programming voltage –0.3 to 3.75 V
VCCPLL Analog power supply (PLL) –0.3 to 1.65 V
VCCI and VMV3DC I/O buffer supply voltage –0.3 to 3.75 V
VI I/O input voltage –0.3 V to 3.6 V (when I/O hot insertion mode is enabled)
–0.3 V to (VCCI + 1 V) or 3.6 V, whichever voltage is lower
(when I/O hot-insertion mode is disabled)
V
TSTG 2Storage temperature –65 to +150 °C
TJ2Junction temperature +125 °C
Notes:
1. The device should be operated within the limits specified by the datasheet. During transitions, the input signal may
undershoot or overshoot according to the limits shown in Table 2-4 on page 2-3.
2. For flash programming and retention maximum limits, refer to Table 2-3 on page 2-3, and for recommended operating
limits, refer to Table 2-2 on page 2-2.
3. VMV pins must be connected to the corresponding VCCI pins. See the "VMVx I/O Supply Voltage (quiet)" section on
page 3-1 for further information.
IGLOOe DC and Switching Characteristics
2-2 Revision 11
Table 2-2 • Recommended Operating Conditions 1
Symbol Parameter Commercial Industrial Units
TAAmbient Temperature 0 to +70 –40 to +85 °C
TJJunction Temperature20 to + 85 –40 to +100 °C
VCC 31.5 V DC core supply voltage4 1.425 to 1.575 1.425 to 1.575 V
1.2 V–1.5 V wide range DC
core voltage5, 6
1.14 to 1.575 1.14 to 1.575 V
VJTAG JTAG DC voltage 1.4 to 3.6 1.4 to 3.6 V
VPUMP Programming voltage6Programming Mode 3.15 to 3.45 3.15 to 3.45 V
Operation70 to 3.6 0 to 3.6 V
VCCPLL8Analog power supply (PLL) 1.5 V DC core supply voltage4 1.425 to 1.575 1.425 to 1.575 V
1.2 V–1.5 V DC core supply
voltage5
1.14 to 1.575 1.14 to 1.575 V
VCCI and
VMV9
1.2 V DC supply voltage51.14 to 1.26 1.14 to 1.26 V
1.2 V wide range DC supply
voltage5
1.14 to 1.575 1.14 to 1.575 V
1.5 V DC supply voltage 1.425 to 1.575 1.425 to 1.575 V
1.8 V DC supply voltage 1.7 to 1.9 1.7 to 1.9 V
2.5 V DC supply voltage 2.3 to 2.7 2.3 to 2.7 V
3.0 V DC supply voltage10 2.7 to 3.6 2.7 to 3.6 V
3.3 V DC supply voltage 3.0 to 3.6 3.0 to 3.6 V
LVDS differential I/O 2.375 to 2.625 2.375 to 2.625 V
LVPECL differential I/O 3.0 to 3.6 3.0 to 3.6 V
Notes:
1. All parameters representing voltages are measured with respect to GND unless otherwise specified.
2. To ensure targeted reliability standards are met across ambient and junction operating temperatures, Microsemi
recommends that the user follow best design practices using Microsemi’s timing and power simulation tools.
3. The ranges given here are for power supplies only. The recommended input voltage ranges specific to each I/O
standard are given in Table 2-21 on page 2-20. VCCI should be at the same voltage within a given I/O bank.
4. For IGLOOe V5 devices
5. For IGLOOe V2 devices only, operating at VCCI VCC
6. All IGLOOe devices (V5 and V2) must be programmed with the VCC core voltage at 1.5 V. Applications using the V2
devices powered by a 1.2 V supply must switch the core supply to 1.5 V for in-system programming.
7. VPUMP can be left floating during operation (not programming mode).
8. VCCPLL pins should be tied to VCC pins. See the "VCCPLA/B/C/D/E/F PLL Supply Voltage" section for further
information.
9. VMV pins must be connected to the corresponding VCCI pins. See the "VMVx I/O Supply Voltage (quiet)" section for
further information.
10. 3.3 V wide range is compliant to the JESD8-B specification and supports 3.0 V VCCI operation.
IGLOOe Low Power Flash FPGAs
Revision 11 2-3
I/O Power-Up and Supply Voltage Thresholds for Power-On Reset
(Commercial and Industrial)
Sophisticated power-up management circuitry is designed into every IGLOOe device. These circuits
ensure easy transition from the powered-off state to the powered-up state of the device. The many
different supplies can power up in any sequence with minimized current spikes or surges. In addition, the
I/O will be in a known state through the power-up sequence. The basic principle is shown in Figure 2-1
on page 2-4 and Figure 2-2 on page 2-5.
There are five regions to consider during power-up.
IGLOOe I/Os are activated only if ALL of the following three conditions are met:
1. VCC and VCCI are above the minimum specified trip points (Figure 2-1 on page 2-4 and
Figure 2-2 on page 2-5).
2. VCCI > VCC – 0.75 V (typical)
3. Chip is in the operating mode.
VCCI Trip Point:
Ramping up: 0.6 V < trip_point_up < 1.2 V
Ramping down: 0.5 V < trip_point_down < 1.1 V
VCC Trip Point:
Ramping up: 0.6 V < trip_point_up < 1.1 V
Ramping down: 0.5 V < trip_point_down < 1 V
VCC and VCCI ramp-up trip points are about 100 mV higher than ramp-down trip points. This specifically
built-in hysteresis prevents undesirable power-up oscillations and current surges. Note the following:
• During programming, I/Os become tristated and weakly pulled up to VCCI.
Table 2-3 • Flash Programming Limits – Retention, Storage, and Operating Temperature1
Product Grade
Programming
Cycles
Program Retention
(biased/unbiased)
Maximum Storage
Temperature TSTG (°C) 2
Maximum Operating Junction
Temperature TJ (°C) 2
Commercial 500 20 years 110 100
Industrial 500 20 years 110 100
Notes:
1. This is a stress rating only; functional operation at any condition other than those indicated is not implied.
2. These limits apply for program/data retention only. Refer to Table 2-1 on page 2-1 and Table 2-2 for device operating
conditions and absolute limits.
Table 2-4 • Overshoot and Undershoot Limits 1, 3
VCCI
Average VCCI–GND Overshoot or Undershoot Duration
as a Percentage of Clock Cycle2
Maximum Overshoot/
Undershoot2
2.7 V or less 10% 1.4 V
5% 1.49 V
3 V 10% 1.1 V
5% 1.19 V
3.3 V 10% 0.79 V
5% 0.88 V
3.6 V 10% 0.45 V
5% 0.54 V
Notes:
1. Based on reliability requirements at junction temperature at 85°C.
2. The duration is allowed at one out of six clock cycles. If the overshoot/undershoot occurs at one out of two cycles, the
maximum overshoot/undershoot has to be reduced by 0.15 V.
3. This table does not provide PCI overshoot/undershoot limits.
IGLOOe DC and Switching Characteristics
2-4 Revision 11
• JTAG supply, PLL power supplies, and charge pump VPUMP supply have no influence on I/O
behavior.
PLL Behavior at Brownout Condition
Microsemi recommends using monotonic power supplies or voltage regulators to ensure proper powerup
behavior. Power ramp-up should be monotonic at least until VCC and VCCPLX exceed brownout
activation levels. The VCC activation level is specified as 1.1 V worst-case (see Figure 2-1 and Figure 2-
2 on page 2-5 for more details).
When PLL power supply voltage and/or VCC levels drop below the VCC brownout levels (0.75 V ±
0.25 V), the PLL output lock signal goes low and/or the output clock is lost. Refer to the
"Power-Up/-Down Behavior of Low Power Flash Devices" chapter of the IGLOOe FPGA Fabric User’s
Guide for information on clock and lock recovery.
Internal Power-Up Activation Sequence
1. Core
2. Input buffers
Output buffers, after 200 ns delay from input buffer activation.
Figure 2-1 • V5 – I/O State as a Function of VCCI and VCC Voltage Levels
Region 1: I/O buffers are OFF
Region 2: I/O buffers are ON.
I/Os are functional (except differential inputs)
but slower because VCCI / VCC are below
specification. For the same reason, input
buffers do not meet VIH / VIL levels, and
output buffers do not meet VOH / VOL levels.
Min VCCI datasheet specification
voltage at a selected I/O
standard; i.e., 1.425 V or 1.7 V
or 2.3 V or 3.0 V
VCC
VCC = 1.425 V
Region 1: I/O Buffers are OFF
Activation trip point:
V
a
= 0.85 V ± 0.25 V
Deactivation trip point:
V
d
= 0.75 V ± 0.25 V
Activation trip point:
V
a
= 0.9 V ± 0.3 V
Deactivation trip point:
V
d
= 0.8 V ± 0.3 V
VCC = 1.575 V
Region 5: I/O buffers are ON
and power supplies are within
specification.
I/Os meet the entire datasheet
and timer specifications for
speed, VIH / VIL, VOH / VOL,
etc.
Region 4: I/O
buffers are ON.
I/Os are functional
(except differential
but slower because VCCI
is below specification. For the
same reason, input buffers do not
meet VIH / VIL levels, and output
buffers do not meet VOH / VOL levels.
Region 4: I/O
buffers are ON.
I/Os are functional
(except differential inputs)
where VT can be from 0.58 V to 0.9 V (typically 0.75 V)
VCCI
Region 3: I/O buffers are ON.
I/Os are functional; I/O DC
specifications are met,
but I/Os are slower because
the VCC is below specification.
VCC = VCCI + VT
IGLOOe Low Power Flash FPGAs
Revision 11 2-5
Thermal Characteristics
Introduction
The temperature variable in Microsemi Designer software refers to the junction temperature, not the
ambient temperature. This is an important distinction because dynamic and static power consumption
cause the chip junction to be higher than the ambient temperature.
EQ 1 can be used to calculate junction temperature.
TJ = Junction Temperature = T + TA
EQ 1
where:
TA = Ambient Temperature
T = Temperature gradient between junction (silicon) and ambient T = ja * P
ja = Junction-to-ambient of the package. ja numbers are located in Table 2-5.
P = Power dissipation
Figure 2-2 • V2 Devices – I/O State as a Function of VCCI and VCC Voltage Levels
Region 1: I/O buffers are OFF
Region 2: I/O buffers are ON.
I/Os are functional (except differential inputs)
but slower because VCCI/VCC are below
specification. For the same reason, input
buffers do not meet VIH/VIL levels, and
output buffers do not meet VOH/VOL levels.
Min VCCI datasheet specification
voltage at a selected I/O
standard; i.e., 1.14 V,1.425 V, 1.7 V,
2.3 V, or 3.0 V
VCC
VCC = 1.14 V
Region 1: I/O Buffers are OFF
Activation trip point:
V
a
= 0.85 V ± 0.2 V
Deactivation trip point:
V
d
= 0.75 V ± 0.2 V
Activation trip point:
V
a
= 0.9 V ± 0.15 V
Deactivation trip point:
V
d
= 0.8 V ± 0.15 V
VCC = 1.575 V
Region 5: I/O buffers are ON
and power supplies are within
specification.
I/Os meet the entire datasheet
and timer specifications for
speed, VIH / VIL , VOH / VOL , etc.
Region 4: I/O
buffers are ON.
I/Os are functional
(except differential
but slower because VCCI is
below specification. For the
same reason, input buffers do not
meet VIH / VIL levels, and output
buffers do not meet VOH / VOL levels.
Region 4: I/O
buffers are ON.
I/Os are functional
(except differential inputs)
where VT can be from 0.58 V to 0.9 V (typically 0.75 V)
VCCI
Region 3: I/O buffers are ON.
I/Os are functional; I/O DC
specifications are met,
but I/Os are slower because
the VCC is below specification.
VCC = VCCI + VT
IGLOOe DC and Switching Characteristics
2-6 Revision 11
Package Thermal Characteristics
The device junction-to-case thermal resistivity is jc and the junction-to-ambient air thermal resistivity is
ja. The thermal characteristics for ja are shown for two air flow rates. The absolute maximum junction
temperature is 100°C. EQ 2 shows a sample calculation of the absolute maximum power dissipation
allowed for an 896-pin FBGA package at commercial temperature and in still air.
EQ 2
Temperature and Voltage Derating Factors
Maximum Power Allowed Max. junction temp. (C) Max. ambient temp. (C)–
ja(C/W)
--------------------------------------------------------------------------------------------------------------------------------- 100C70C–
13.6C/W
-----------------------------------2.206 W===
Table 2-5 • Package Thermal Resistivities
Package Type Pin Count jc
ja
UnitsStill Air 200 ft./min. 500 ft./min.
Plastic Quad Flat Package (PQFP) 208 8.0 26.1 22.5 20.8 C/W
Plastic Quad Flat Package (PQFP) with
embedded heat spreader
208 3.8 16.2 13.3 11.9 C/W
Fine Pitch Ball Grid Array (FBGA) 256 3.8 26.9 22.8 21.5 C/W
484 3.2 20.5 17.0 15.9 C/W
676 3.2 16.4 13.0 12.0 C/W
896 2.4 13.6 10.4 9.4 C/W
Table 2-6 • Temperature and Voltage Derating Factors for Timing Delays
(normalized to TJ = 70°C,VCC = 1.425 V)
For IGLOOe V2 or V5 devices, 1.5 V DC Core Supply Voltage
Array Voltage
VCC (V)
Junction Temperature (°C)
–40°C 0°C 25°C 70°C 85°C 100°C
1.425 0.945 0.965 0.978 1.000 1.008 1.013
1.500 0.876 0.893 0.906 0.927 0.934 0.940
1.575 0.824 0.840 0.852 0.872 0.879 0.884
Table 2-7 • Temperature and Voltage Derating Factors for Timing Delays
(normalized to TJ = 70°C, VCC = 1.14 V)
For IGLOOe V2, 1.2 V DC Core Supply Voltage
Array Voltage
VCC (V)
Junction Temperature (°C)
–40°C 0°C 25°C 70°C 85°C 100°C
1.14 0.968 0.978 0.991 1.000 1.006 1.010
1.20 0.864 0.873 0.885 0.893 0.898 0.902
1.26 0.793 0.803 0.813 0.821 0.826 0.829
IGLOOe Low Power Flash FPGAs
Revision 11 2-7
Calculating Power Dissipation
Quiescent Supply Current
Quiescent supply current (IDD) calculation depends on multiple factors, including operating
voltages (VCC, VCCI, and VJTAG), operating temperature, system clock frequency, and power
modes usage. Microsemi recommends using the PowerCalculator and SmartPower software
estimation tools to evaluate the projected static and active power based on the user design, power
mode usage, operating voltage, and temperature.
Table 2-8 • Power Supply State per Mode
Power Supply Configurations
Modes/power supplies VCC VCCPLL VCCI VJTAG VPUMP
Flash*Freeze On On On On On/off/floating
Sleep Off Off On Off Off
Shutdown Off Off Off Off Off
No Flash*Freeze On On On On On/off/floating
Note: Off: Power supply level = 0 V
Table 2-9 • Quiescent Supply Current (IDD), IGLOOe Flash*Freeze Mode*
Core Voltage AGLE600 AGLE3000 Units
Typical (25°C) 1.2 V 34 95 µA
1.5 V 72 310 µA
Note: *IDD includes VCC, VPUMP, VCCI, VCCPLL, and VMV currents. Values do not include I/O static contribution,
which is shown in Table 2-13 on page 2-9 and Table 2-14 on page 2-10 (PDC6 and PDC7).
Table 2-10 • Quiescent Supply Current (IDD) Characteristics, IGLOOe Sleep Mode*
Core Voltage AGLE600 AGLE3000 Units
VCCI/VJTAG = 1.2 V (per bank)
Typical (25°C)
1.2 V 1.7 1.7 µA
VCCI/VJTAG = 1.5 V (per bank)
Typical (25°C)
1.2 V / 1.5 V 1.8 1.8 µA
VCCI/VJTAG = 1.8 V (per bank)
Typical (25°C)
1.2 V / 1.5 V 1.9 1.9 µA
VCCI/VJTAG = 2.5 V (per bank)
Typical (25°C)
1.2 V / 1.5 V 2.2 2.2 µA
VCCI/VJTAG= 3.3 V (per bank)
Typical (25°C)
1.2 V / 1.5 V 2.5 2.5 µA
Note: *IDD = NBANKS × ICCI. Values do not include I/O static contribution, which is shown in Table 2-13 on page 2-9
and Table 2-14 on page 2-10 (PDC6 and PDC7).
Table 2-11 • Quiescent Supply Current (IDD) Characteristics, IGLOOe Shutdown Mode*
Core Voltage AGLE600 AGLE3000 Units
Typical (25°C) 1.2 V / 1.5 V 0 0 µA
IGLOOe DC and Switching Characteristics
2-8 Revision 11
Table 2-12 • Quiescent Supply Current (IDD) Characteristics, No Flash*Freeze Mode1
Core Voltage AGLE600 AGLE3000 Units
ICCA Current2
Typical (25°C) 1.2 V 28 89 µA
1.5 V 82 320 µA
ICCI or IJTAG Current3
VCCI/VJTAG = 1.2 V (per bank)
Typical (25°C)
1.2 V 1.7 1.7 µA
VCCI/VJTAG = 1.5 V (per bank)
Typical (25°C)
1.2 V / 1.5 V 1.8 1.8 µA
VCCI/VJTAG = 1.8 V (per bank)
Typical (25°C)
1.2 V / 1.5 V 1.9 1.9 µA
VCCI/VJTAG = 2.5 V (per bank)
Typical (25°C)
1.2 V / 1.5 V 2.2 2.2 µA
VCCI/VJTAG= 3.3 V (per bank)
Typical (25°C)
1.2 V / 1.5 V 2.5 2.5 µA
Notes:
1. IDD = NBANKS × ICCI + ICCA. JTAG counts as one bank when powered.
2. Includes VCC and VPUMP and VCCPLL currents.
3. Values do not include I/O static contribution (PDC6 and PDC7).
IGLOOe Low Power Flash FPGAs
Revision 11 2-9
Power per I/O Pin
Table 2-13 • Summary of I/O Input Buffer Power (per pin) – Default I/O Software Settings
VCCI
(V)
Static Power
PDC6 (mW)1
Dynamic Power
PAC9 (µW/MHz)2
Single-Ended
3.3 V LVTTL/LVCMOS 3.3 – 16.34
3.3 V LVTTL/LVCMOS – Schmitt trigger 3.3 – 24.49
3.3 V LVCMOS Wide Range 33.3 – 16.34
3.3 V LVCMOS Wide Range – Schmitt trigger 33.3 – 24.49
2.5 V LVCMOS 2.5 – 4.71
2.5 V LVCMOS 2.5 – 6.13
1.8 V LVCMOS 1.8 – 1.66
1.8 V LVCMOS – Schmitt trigger 1.8 – 1.78
1.5 V LVCMOS (JESD8-11) 1.5 – 1.01
1.5 V LVCMOS (JESD8-11) – Schmitt trigger 1.5 – 0.97
1.2 V LVCMOS 41.2 – 0.60
1.2 V LVCMOS – Schmitt trigger 41.2 – 0.53
1.2 V LVCMOS Wide Range 41.2 – 0.60
1.2 V LVCMOS Wide Range – Schmitt trigger 41.2 – 0.53
3.3 V PCI 3.3 – 17.76
3.3 V PCI – Schmitt trigger 3.3 – 19.10
3.3 V PCI-X 3.3 – 17.76
3.3 V PCI-X – Schmitt trigger 3.3 – 19.10
Voltage-Referenced
3.3 V GTL 3.3 2.90 7.14
2.5 V GTL 2.5 2.13 3.54
3.3 V GTL+ 3.3 2.81 2.91
2.5 V GTL+ 2.5 2.57 2.61
HSTL (I) 1.5 0.17 0.79
HSTL (II) 1.5 0.17 .079
SSTL2 (I) 2.5 1.38 3.26
SSTL2 (II) 2.5 1.38 3.26
SSTL3 (I) 3.3 3.21 7.97
SSTL3 (II) 3.3 3.21 7.97
Differential
LVDS 2.5 2.26 0.89
LVPECL 3.3 5.71 1.94
Notes:
1. PDC6 is the static power (where applicable) measured on VCCI.
2. PAC9 is the total dynamic power measured on VCCI.
3. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD8b specification.
4. Applicable for IGLOOe V2 devices only.
IGLOOe DC and Switching Characteristics
2-10 Revision 11
Table 2-14 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings1
CLOAD
(pF)
VCCI
(V)
Static Power
PDC7 (mW)2
Dynamic Power
PAC10 (µW/MHz)3
Single-Ended
3.3 V LVTTL/LVCMOS 5 3.3 – 148.00
3.3 V LVCMOS Wide Range 45 3.3 – 148.00
2.5 V LVCMOS 5 2.5 – 83.23
1.8 V LVCMOS 5 1.8 – 54.58
1.5 V LVCMOS (JESD8-11) 5 1.5 – 37.05
1.2 V LVCMOS (JESD8-11) 5 1.2 – 17.94
1.2 V LVCMOS (JESD8-11) – Wide
Range
17.94
3.3 V PCI 10 3.3 – 204.61
3.3 V PCI-X 10 3.3 – 204.61
Voltage-Referenced
3.3 V GTL 10 3.3 – 24.08
2.5 V GTL 10 2.5 – 13.52
3.3 V GTL+ 10 3.3 – 24.10
2.5 V GTL+ 10 2.5 – 13.54
HSTL (I) 20 1.5 7.08 26.22
HSTL (II) 20 1.5 13.88 27.18
SSTL2 (I) 30 2.5 16.69 105.56
SSTL2 (II) 30 2.5 25.91 116.60
SSTL3 (I) 30 3.3 26.02 114.67
SSTL3 (II) 30 3.3 42.21 131.69
Differential
LVDS – 2.5 7.70 89.62
LVPECL – 3.3 19.42 167.86
Notes:
1. Dynamic power consumption is given for standard load and software default drive strength and output slew.
2. PDC7 is the static power (where applicable) measured on VCCI.
3. PAC10 is the total dynamic power measured on VCCI.
4. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD8b specification.
IGLOOe Low Power Flash FPGAs
Revision 11 2-11
Power Consumption of Various Internal Resources
Table 2-15 • Different Components Contributing to the Dynamic Power Consumption in IGLOOe Devices
For IGLOOe V2 or V5 Devices, 1.5 V DC Core Supply Voltage
Parameter Definition
Device-Specific Dynamic
Contributions (µW/MHz)
AGLE600 AGLE3000
PAC1 Clock contribution of a Global Rib 19.7 12.77
PAC2 Clock contribution of a Global Spine 4.16 1.85
PAC3 Clock contribution of a VersaTile row 0.88
PAC4 Clock contribution of a VersaTile used as a sequential module 0.11
PAC5 First contribution of a VersaTile used as a sequential module 0.057
PAC6 Second contribution of a VersaTile used as a sequential module 0.207
PAC7 Contribution of a VersaTile used as a combinatorial module 0.207
PAC8 Average contribution of a routing net 0.7
PAC9 Contribution of an I/O input pin (standard-dependent) See Table 2-13 on page 2-9.
PAC10 Contribution of an I/O output pin (standard-dependent) See Table 2-14 on page 2-10.
PAC11 Average contribution of a RAM block during a read operation 25.00
PAC12 Average contribution of a RAM block during a write operation 30.00
PAC13 Dynamic contribution for PLL 2.70
Note: For a different output load, drive strength, or slew rate, Microsemi recommends using the Microsemi power
calculator or SmartPower in Libero Integrated Design Environment (IDE) software.
Table 2-16 • Different Components Contributing to the Static Power Consumption in IGLOO Devices
For IGLOOe V2 or V5 Devices, 1.5 V DC Core Supply Voltage
Parameter Definition
Device Specific Static Power (mW)
AGLE600 AGLE3000
PDC1 Array static power in Active mode See Table 2-12 on page 2-8.
PDC2 Array static power in Static (Idle) mode See Table 2-11 on page 2-7.
PDC3 Array static power in Flash*Freeze mode See Table 2-9 on page 2-7.
PDC4 Static PLL contribution 1.84
PDC5 Bank quiescent power (VCCI-dependent) See Table 2-12 on page 2-8.
PDC6 I/O input pin static power (standard-dependent) See Table 2-13 on page 2-9.
PDC7 I/O output pin static power (standard-dependent) See Table 2-14 on page 2-10.
IGLOOe DC and Switching Characteristics
2-12 Revision 11
Table 2-17 • Different Components Contributing to the Dynamic Power Consumption in IGLOOe Devices
For IGLOOe V2 Devices, 1.2 V DC Core Supply Voltage
Parameter Definition
Device-Specific Dynamic
Contributions (µW/MHz)
AGLE600 AGLE3000
PAC1 Clock contribution of a Global Rib 12.61 8.17
PAC2 Clock contribution of a Global Spine 2.66 1.18
PAC3 Clock contribution of a VersaTile row 0.56
PAC4 Clock contribution of a VersaTile used as a sequential module 0.071
PAC5 First contribution of a VersaTile used as a sequential module 0.045
PAC6 Second contribution of a VersaTile used as a sequential module 0.186
PAC7 Contribution of a VersaTile used as a combinatorial module 0.109
PAC8 Average contribution of a routing net 0.449
PAC9 Contribution of an I/O input pin (standard-dependent) See Table 2-9 on page 2-7.
PAC10 Contribution of an I/O output pin (standard-dependent) See Table 2-10 on page 2-7
and Table 2-11 on page 2-7.
PAC11 Average contribution of a RAM block during a read operation 25.00
PAC12 Average contribution of a RAM block during a write operation 30.00
PAC13 Dynamic PLL contribution 2.10
Note: For a different output load, drive strength, or slew rate, Microsemi recommends using the Microsemi power
calculator or SmartPower in Libero IDE software.
Table 2-18 • Different Components Contributing to the Static Power Consumption in IGLOO Devices
For IGLOOe V2 Devices, 1.2 V DC Core Supply Voltage
Parameter Definition
Device Specific Static Power (mW)
AGLE600 AGLE3000
PDC1 Array static power in Active mode See Table 2-12 on page 2-8.
PDC2 Array static power in Static (Idle) mode See Table 2-11 on page 2-7.
PDC3 Array static power in Flash*Freeze mode See Table 2-9 on page 2-7.
PDC4 Static PLL contribution 0.90
PDC5 Bank quiescent power (VCCI-dependent) See Table 2-12 on page 2-8.
PDC6 I/O input pin static power (standard-dependent) See Table 2-13 on page 2-9.
PDC7 I/O output pin static power (standard-dependent) See Table 2-14 on page 2-10.
IGLOOe Low Power Flash FPGAs
Revision 11 2-13
Power Calculation Methodology
This section describes a simplified method to estimate power consumption of an application. For more
accurate and detailed power estimations, use the SmartPower tool in the Libero IDE software.
The power calculation methodology described below uses the following variables:
• The number of PLLs as well as the number and the frequency of each output clock generated
• The number of combinatorial and sequential cells used in the design
• The internal clock frequencies
• The number and the standard of I/O pins used in the design
• The number of RAM blocks used in the design
• Toggle rates of I/O pins as well as VersaTiles—guidelines are provided in Table 2-19 on
page 2-15.
• Enable rates of output buffers—guidelines are provided for typical applications in Table 2-20 on
page 2-15.
• Read rate and write rate to the memory—guidelines are provided for typical applications in
Table 2-20 on page 2-15. The calculation should be repeated for each clock domain defined in the
design.
Methodology
Total Power Consumption—PTOTAL
PTOTAL = PSTAT + PDYN
PSTAT is the total static power consumption.
PDYN is the total dynamic power consumption.
Total Static Power Consumption—PSTAT
PSTAT = (PDC1 or PDC2 or PDC3) + NBANKS * PDC5 + NINPUTS* PDC6 + NOUTPUTS* PDC7
NINPUTS is the number of I/O input buffers used in the design.
NOUTPUTS is the number of I/O output buffers used in the design.
NBANKS is the number of I/O banks powered in the design.
Total Dynamic Power Consumption—PDYN
PDYN = PCLOCK + PS-CELL + PC-CELL + PNET + PINPUTS + POUTPUTS + PMEMORY + PPLL
Global Clock Contribution—PCLOCK
PCLOCK = (PAC1 + NSPINE * PAC2 + NROW * PAC3 + NS-CELL * PAC4) * FCLK
NSPINE is the number of global spines used in the user design—guidelines are provided in
the "Spine Architecture" section of the Global Resources chapter in the IGLOOe FPGA Fabric
User's Guide.
NROW is the number of VersaTile rows used in the design—guidelines are provided in the
"Spine Architecture" section of the Global Resources chapter in the IGLOOe FPGA Fabric
User's Guide.
FCLK is the global clock signal frequency.
NS-CELL is the number of VersaTiles used as sequential modules in the design.
PAC1, PAC2, PAC3, and PAC4 are device-dependent.
Sequential Cells Contribution—PS-CELL
PS-CELL = NS-CELL * (PAC5 + 1 / 2 * PAC6) * FCLK
NS-CELL is the number of VersaTiles used as sequential modules in the design. When a
multi-tile sequential cell is used, it should be accounted for as 1.
1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-19 on
page 2-15.
FCLK is the global clock signal frequency.
IGLOOe DC and Switching Characteristics
2-14 Revision 11
Combinatorial Cells Contribution—PC-CELL
PC-CELL = NC-CELL* 1 / 2 * PAC7 * FCLK
NC-CELL is the number of VersaTiles used as combinatorial modules in the design.
1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-19 on
page 2-15.
FCLK is the global clock signal frequency.
Routing Net Contribution—PNET
PNET = (NS-CELL + NC-CELL) * 1 / 2 * PAC8 * FCLK
NS-CELL is the number of VersaTiles used as sequential modules in the design.
NC-CELL is the number of VersaTiles used as combinatorial modules in the design.
1 is the toggle rate of VersaTile outputs—guidelines are provided in Table 2-19 on
page 2-15.
FCLK is the global clock signal frequency.
I/O Input Buffer Contribution—PINPUTS
PINPUTS = NINPUTS * 2 / 2 * PAC9 * FCLK
NINPUTS is the number of I/O input buffers used in the design.
2 is the I/O buffer toggle rate—guidelines are provided in Table 2-19 on page 2-15.
FCLK is the global clock signal frequency.
I/O Output Buffer Contribution—POUTPUTS
POUTPUTS = NOUTPUTS * 2 / 2 * 1 * PAC10 * FCLK
NOUTPUTS is the number of I/O output buffers used in the design.
2 is the I/O buffer toggle rate—guidelines are provided in Table 2-19 on page 2-15.
1 is the I/O buffer enable rate—guidelines are provided in Table 2-20 on page 2-15.
FCLK is the global clock signal frequency.
RAM Contribution—PMEMORY
PMEMORY = PAC11 * NBLOCKS * FREAD-CLOCK * 2 + PAC12 * NBLOCK * FWRITE-CLOCK * 3
NBLOCKS is the number of RAM blocks used in the design.
FREAD-CLOCK is the memory read clock frequency.
2 is the RAM enable rate for read operations—guidelines are provided in Table 2-20 on
page 2-15.
FWRITE-CLOCK is the memory write clock frequency.
3 is the RAM enable rate for write operations—guidelines are provided in Table 2-20 on
page 2-15.
PLL Contribution—PPLL
PPLL = PDC4 + PAC13 * FCLKOUT
FCLKOUT is the output clock frequency.1
1. If a PLL is used to generate more than one output clock, include each output clock in the formula by adding its corresponding
contribution (PAC13* FCLKOUT product) to the total PLL contribution.
IGLOOe Low Power Flash FPGAs
Revision 11 2-15
Guidelines
Toggle Rate Definition
A toggle rate defines the frequency of a net or logic element relative to a clock. It is a percentage. If the
toggle rate of a net is 100%, this means that this net switches at half the clock frequency. Below are
some examples:
• The average toggle rate of a shift register is 100% as all flip-flop outputs toggle at half of the clock
frequency.
• The average toggle rate of an 8-bit counter is 25%:
– Bit 0 (LSB) = 100%
– Bit 1 = 50%
– Bit 2 = 25%
–…
– Bit 7 (MSB) = 0.78125%
– Average toggle rate = (100% + 50% + 25% + 12.5% + . . . + 0.78125%) / 8
Enable Rate Definition
Output enable rate is the average percentage of time during which tristate outputs are enabled. When
nontristate output buffers are used, the enable rate should be 100%.
Table 2-19 • Toggle Rate Guidelines Recommended for Power Calculation
Component Definition Guideline
1Toggle rate of VersaTile outputs 10%
2I/O buffer toggle rate 10%
Table 2-20 • Enable Rate Guidelines Recommended for Power Calculation
Component Definition Guideline
1I/O output buffer enable rate 100%
2RAM enable rate for read operations 12.5%
3RAM enable rate for write operations 12.5%
IGLOOe DC and Switching Characteristics
2-16 Revision 11
User I/O Characteristics
Timing Model
Figure 2-3 • Timing Model
Operating Conditions: Std. Speed, Commercial Temperature Range (TJ= 70°C), Worst-Case
VCC = 1.425 V, Applicable to 1.5 V DC Core Voltage, V2 and V5 devices
DQ
Y
Y
DQ
DQ DQ
Y
Combinational Cell
Combinational Cell
Combinational Cell
I/O Module
(Registered)
I/O Module
(Non-Registered)
Register Cell Register Cell
I/O Module
(Registered)
I/O Module
(Non-Registered)
LVPECL
LVPECL
LVDS,
BLVDS,
M-LVDS
GTL+ 3.3V
Y
Combinational Cell
Y
Combinational Cell
Y
Combinational Cell
I/O Module
(Non-Registered)
LVTTL/LVCMOS 3.3 V
Output drive strength = 24 mA
High slew rate
I/O Module
(Non-Registered)
LVCMOS 1.5V
Output drive strength = 12 mA
High slew
LVTTL/LVCMOS 3.3 V
Output drive strength = 12 mA
High slew rate
I/O Module
(Non-Registered)
Input LVTTL/LVCMOS 3.3 V
Clock
Input LVTTL/LVCMOS 3.3 V
Clock
Input LVTTL/LVCMOS 3.3 V
Clock
tPD = 1.19 ns tPD = 1.04 ns
tDP = 1.75 ns
tPD = 1.77 ns tDP = 3.13 ns
tPD = 1.33 ns
tPD = 0.85 ns
tDP = 2.76 ns
tDP = 3.30 ns
tOCLKQ = 1.02 ns
tDP = 1.85 ns
tOSUD = 0.52 ns
tPY = 1.10 ns
tCLKQ = 0.90 ns
tSUD = 0.82 ns
tPY = 1.10 ns
tPD = 0.90 ns
tCLKQ = 0.90 ns
tSUD = 0.82 ns
tPY = 1.62 ns
tPY = 1.10 ns
tICLKQ = 0.43 ns
tISUD = 0.47 ns
tPY = 1.45 ns
IGLOOe Low Power Flash FPGAs
Revision 11 2-17
Figure 2-4 • Input Buffer Timing Model and Delays (example)
(R)
PAD
Y
GND
(F)
50%
50%
(R) (F)
(R)
DIN
GND
(F)
50%50%
PAD Y
D
CLK
Q
I/O Interface
DIN
To Array
tDIN tDIN
VCC
tPYS
tPY
tPYS
tPY
VCC
Vtrip Vtrip
VIH
VIL
tPY = MAX(tPY(R), tPY(F))
tDIN = MAX(tDIN(R), tDIN(F))
tPY tDIN
IGLOOe DC and Switching Characteristics
2-18 Revision 11
Figure 2-5 • Output Buffer Model and Delays (example)
tDP
(R)
PAD VOL
tDP
(F)
Vtrip
Vtrip
VOH
VCC
D50% 50%
VCC
0 V
DOUT 50% 50% 0 V
tDOUT
(R)
tDOUT
(F)
From Array
PAD
tDP
Std
Load
D
CLK
Q
I/O Interface
DOUT
D
tDOUT
tDP = MAX(tDP(R), tDP(F))
tDOUT = MAX(tDOUT(R), tDOUT(F))
IGLOOe Low Power Flash FPGAs
Revision 11 2-19
Figure 2-6 • Tristate Output Buffer Timing Model and Delays (example)
D
CLK
Q
D
CLK
Q
10% V
CCI
t
ZL
Vtrip
50%
t
HZ
90% VCCI
t
ZH
Vtrip
50% 50% t
LZ
50%
EOUT
PAD
D
E50%
t
EOUT (R)
50%t
EOUT (F)
PAD
DOUT
EOUT
D
I/O Interface
E
t
EOUT
t
ZLS
Vtrip
50%
t
ZHS
Vtrip
50%
EOUT
PAD
D
E50% 50%
t
EOUT (R)
t
EOUT (F)
50%
VCC
VCC
VCC
VCCI
VCC
VCC
VCC
VOH
VOL
VOL
t
ZL
, t
ZH
, t
HZ
, t
LZ
, t
ZLS
, t
ZHS
t
EOUT
= MAX(t
EOUT
(r), t
EOUT
(f))
IGLOOe DC and Switching Characteristics
2-20 Revision 11
Overview of I/O Performance
Summary of I/O DC Input and Output Levels – Default I/O Software
Settings
Table 2-21 • Summary of Maximum and Minimum DC Input and Output Levels
Applicable to Commercial and Industrial Conditions
I/O
Standard
Drive
Strength
Equivalent
Software
Default
Drive
Strength2
Slew
Rate
VIL VIH VOL VOH IOL1IOH1
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
3.3 V
LVTTL /
3.3 V
LVCMOS
12 mA 12 mA High –0.3 0.8 2 3.6 0.4 2.4 12 12
3.3 V
LVCMOS
Wide
Range3
100 µA 12 mA High –0.3 0.8 2 3.6 0.2 VCCI – 0.2 0.1 0.1
2.5 V
LVCMOS
12 mA 12 mA High –0.3 0.7 1.7 3.6 0.7 1.7 12 12
1.8 V
LVCMOS
12 mA 12 mA High –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 12 12
1.5 V
LVCMOS
12 mA 12 mA High –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 12 12
1.2 V
LVCMOS
2 mA 2 mA High –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 2 2
1.2 V
LVCMOS
Wide
Range 4
100 µA 2 mA High –0.3 0.3 * VCCI 0.7 * VCCI 3.6 0.1 VCCI – 0.1 0.1 0.1
3.3 V PCI Per PCI Specification
3.3 V PCI-X Per PCI-X Specification
3.3 V GTL 20 mA520 mA5High –0.3 VREF – 0.05 VREF + 0.05 3.6 0.4 – 20 20
2.5 V GTL 20 mA520 mA5High –0.3 VREF – 0.05 VREF + 0.05 3.6 0.4 – 20 20
3.3 V GTL+ 35 mA 35 mA High –0.3 VREF – 0.1 VREF + 0.1 3.6 0.6 – 35 35
2.5 V GTL+ 33 mA 33 mA High –0.3 VREF – 0.1 VREF + 0.1 3.6 0.6 – 33 33
HSTL (I) 8 mA 8 mA High –0.3 VREF – 0.1 VREF + 0.1 3.6 0.4 VCCI – 0.4 8 8
Notes:
1. Currents are measured at 85°C junction temperature.
2. The minimum drive strength for any LVCMOS 1.2 V or LVCMOS 3.3 V software configuration when run in wide range is
±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the
IBIS models.
3. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD8-12 specification.
4. All LVCMOS 1.2 V software macros support LVCMOS 1.2 V wide range as specified in the JESD8-12 specification.
5. Output drive strength is below JEDEC specification.
6. Output Slew Rates can be extracted from IBIS Models, http://www.microsemi.com/soc/download/ibis/default.aspx.
IGLOOe Low Power Flash FPGAs
Revision 11 2-21
HSTL (II) 15 mA515 mA5High –0.3 VREF – 0.1 VREF + 0.1 3.6 0.4 VCCI – 0.4 15 15
SSTL2 (I) 15 mA 15 mA High –0.3 VREF – 0.2 VREF + 0.2 3.6 0.54 VCCI – 0.62 15 15
SSTL2 (II) 18 mA 18 mA High –0.3 VREF – 0.2 VREF + 0.2 3.6 0.35 VCCI – 0.43 18 18
SSTL3 (I) 14 mA 14 mA High –0.3 VREF – 0.2 VREF + 0.2 3.6 0.7 VCCI – 1.1 14 14
SSTL3 (II) 21 mA 21 mA High –0.3 VREF – 0.2 VREF + 0.2 3.6 0.5 VCCI – 0.9 21 21
Table 2-21 • Summary of Maximum and Minimum DC Input and Output Levels (continued)
Applicable to Commercial and Industrial Conditions
I/O
Standard
Drive
Strength
Equivalent
Software
Default
Drive
Strength2
Slew
Rate
VIL VIH VOL VOH IOL1IOH1
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
Notes:
1. Currents are measured at 85°C junction temperature.
2. The minimum drive strength for any LVCMOS 1.2 V or LVCMOS 3.3 V software configuration when run in wide range is
±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the
IBIS models.
3. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD8-12 specification.
4. All LVCMOS 1.2 V software macros support LVCMOS 1.2 V wide range as specified in the JESD8-12 specification.
5. Output drive strength is below JEDEC specification.
6. Output Slew Rates can be extracted from IBIS Models, http://www.microsemi.com/soc/download/ibis/default.aspx.
IGLOOe DC and Switching Characteristics
2-22 Revision 11
Table 2-22 • Summary of Maximum and Minimum DC Input Levels
Applicable to Commercial and Industrial Conditions
DC I/O Standards
Commercial1Industrial2
IIL3IIH4IIL3IIH4
µA µA µA µA
3.3 V LVTTL / 3.3 V LVCMOS 10 10 15 15
3.3 V LVCMOS Wide Range 10 10 15 15
2.5 V LVCMOS 10 10 15 15
1.8 V LVCMOS 10 10 15 15
1.5 V LVCMOS 10 10 15 15
1.2 V LVCMOS510 10 15 15
1.2 V LVCOMS Wide Range510 10 15 15
3.3 V PCI 10 10 15 15
3.3 V PCI-X 10 10 15 15
3.3 V GTL 10 10 15 15
2.5 V GTL 10 10 15 15
3.3 V GTL+ 10 10 15 15
2.5 V GTL+ 10 10 15 15
HSTL (I) 10 10 15 15
HSTL (II) 10 10 15 15
SSTL2 (I) 10 10 15 15
SSTL2 (II) 10 10 15 15
SSTL3 (I) 10 10 15 15
SSTL3 (II) 10 10 15 15
Notes:
1. Commercial range (0°C < TA < 70°C)
2. Industrial range (–40°C < TA < 85°C)
3. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.
4. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
5. Applicable to V2 devices operating at VCCI VCC.
IGLOOe Low Power Flash FPGAs
Revision 11 2-23
Summary of I/O Timing Characteristics – Default I/O Software
Settings
Table 2-23 • Summary of AC Measuring Points
Standard
Input Reference
Voltage (VREF_TYP)
Board Termination
Voltage (VTT_REF)
Measuring Trip
Point (Vtrip)
3.3 V LVTTL / 3.3 V LVCMOS – – 1.4 V
3.3 V LVCMOS Wide Range – – 1.4 V
2.5 V LVCMOS – – 1.2 V
1.8 V LVCMOS – – 0.90 V
1.5 V LVCMOS – – 0.75 V
1.2 V LVCMOS* – – 0.6 V
1.2 V LVCMOS – Wide Range* – – 0.6 V
3.3 V PCI – – 0.285 * VCCI (RR)
– – 0.615 * VCCI (FF))
3.3 V PCI-X – – 0.285 * VCCI (RR)
– – 0.615 * VCCI (FF)
3.3 V GTL 0.8 V 1.2 V VREF
2.5 V GTL 0.8 V 1.2 V VREF
3.3 V GTL+ 1.0 V 1.5 V VREF
2.5 V GTL+ 1.0 V 1.5 V VREF
HSTL (I) 0.75 V 0.75 V VREF
HSTL (II) 0.75 V 0.75 V VREF
SSTL2 (I) 1.25 V 1.25 V VREF
SSTL2 (II) 1.25 V 1.25 V VREF
SSTL3 (I) 1.5 V 1.485 V VREF
SSTL3 (II) 1.5 V 1.485 V VREF
LVDS – – Cross point
LVPECL – – Cross point
Note: *Applicable to V2 devices ONLY operating in the 1.2 V core range.
IGLOOe DC and Switching Characteristics
2-24 Revision 11
Table 2-24 • I/O AC Parameter Definitions
Parameter Definition
tDP Data to Pad delay through the Output Buffer
tPY Pad to Data delay through the Input Buffer with Schmitt trigger disabled
tDOUT Data to Output Buffer delay through the I/O interface
tEOUT Enable to Output Buffer Tristate Control delay through the I/O interface
tDIN Input Buffer to Data delay through the I/O interface
tPYS Pad to Data delay through the Input Buffer with Schmitt trigger enabled
tHZ Enable to Pad delay through the Output Buffer—HIGH to Z
tZH Enable to Pad delay through the Output Buffer—Z to HIGH
tLZ Enable to Pad delay through the Output Buffer—LOW to Z
tZL Enable to Pad delay through the Output Buffer—Z to LOW
tZHS Enable to Pad delay through the Output Buffer with delayed enable—Z to HIGH
tZLS Enable to Pad delay through the Output Buffer with delayed enable—Z to LOW
IGLOOe Low Power Flash FPGAs
Revision 11 2-25
Table 2-25 • Summary of I/O Timing Characteristics—Software Default Settings
Std. Speed Grade, Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCI (per standard)
I/O Standard
Drive Strength (mA)
Equivalent Software Default
Drive Strength Option1 (mA)
Slew Rate
Capacitive Load (pF)
External Resistor ()
tDOUT (ns)
tDP (ns)
tDIN (ns)
tPY (ns)
tPYS (ns)
tEOUT (ns)
tZL (ns)
tZH (ns)
tLZ (ns)
tHZ (ns)
tZLS (ns)
tZHS (ns)
Units
3.3 V LVTTL /
3.3 V LVCMOS
12 12 High 5 – 0.97 2.12 0.18 1.08 1.34 0.66 2.17 1.69 2.71 3.08 5.76 5.28 ns
3.3 V LVCMOS
Wide Range1, 2
100 µA 12 High 5 – 0.972.960.181.421.840.662.982.283.864.366.585.87 ns
2.5 V LVCMOS 12 12 High 5 – .097 2.15 0.18 1.31 1.41 0.66 2.20 1.85 2.78 2.98 5.80 5.45 ns
1.8 V LVCMOS 12 12 High 5 – 0.97 2.37 0.18 1.27 1.59 0.66 2.42 2.03 3.07 3.57 6.02 5.62 ns
1.5 V LVCMOS 12 12 High 5 – 0.97 2.69 0.18 1.47 1.77 0.66 2.75 2.30 3.24 3.67 6.35 5.89 ns
3.3 V PCI Per
PCI
spec
– High 10 25 30.97 2.38 0.18 0.96 1.42 0.66 2.43 1.80 2.72 3.08 6.03 5.39 ns
3.3 V PCI-X Per
PCI-X
spec
– High 10 25 30.97 2.38 0.19 0.92 1.34 0.66 2.43 1.80 2.72 3.08 6.03 5.39 ns
3.3 V GTL 204– High 10 25 0.97 1.78 0.19 2.35 – 0.66 1.80 1.78 – – 5.39 5.38 ns
2.5 V GTL 204– High 10 25 0.97 1.85 0.19 1.98 – 0.66 1.89 1.82 – – 5.49 5.42 ns
3.3 V GTL+ 35 – High 10 25 0.97 1.80 0.19 1.32 – 0.66 1.84 1.77 – – 5.44 5.36 ns
2.5 V GTL+ 33 – High 10 25 0.97 1.92 0.19 1.26 – 0.66 1.96 1.80 – – 5.56 5.40 ns
HSTL (I) 8 – High 20 50 0.97 2.67 0.18 1.72 – 0.66 2.72 2.67 – – 6.32 6.26 ns
HSTL (II) 15 – High 20 25 0.97 2.55 0.18 1.72 – 0.66 2.60 2.34 – – 6.20 5.93 ns
SSTL2 (I) 15 – High 30 50 0.97 1.86 0.19 1.12 – 0.66 1.90 1.68 – – 5.50 5.28 ns
SSTL2 (II) 18 – High 30 25 0.97 1.89 0.19 1.12 – 0.66 1.93 1.62 – – 5.53 5.22 ns
SSTL3 (I) 14 – High 30 50 0.97 2.00 0.19 1.06 – 0.66 2.04 1.67 – – 5.64 5.27 ns
SSTL3 (II) 21 – High 30 25 0.97 1.81 0.19 1.06 – 0.66 1.85 1.55 – – 5.45 5.14 ns
LVDS 24 – High – – 0.971.730.191.62–––––––– ns
LVPECL 24 – High – – 0.971.650.181.42–––––––– ns
Notes:
1. The minimum drive strength for any LVCMOS 1.2 V or LVCMOS 3.3 V software configuration when run in wide range is
±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the
IBIS models.
2. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD8-B specification.
3. Resistance is used to measure I/O propagation delays as defined in PCI Specifications. See Figure 2-12 on page 2-49 for
connectivity. This resistor is not required during normal operation.
4. Output drive strength is below JEDEC specification.
5. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-26 Revision 11
Table 2-26 • Summary of I/O Timing Characteristics—Software Default Settings
Std. Speed Grade, Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V,
Worst-Case VCCI (per standard)
I/O Standard
Drive Strength (mA)
Equivalent Software Default
Drive Strength Option1 (mA)
Slew Rate
Capacitive Load (pF)
External Resistor ()
tDOUT (ns)
tDP (ns)
tDIN (ns)
tPY (ns)
tPYS (ns)
tEOUT (ns)
tZL (ns)
tZH (ns)
tLZ (ns)
tHZ (ns)
tZLS (ns)
tZHS (ns)
Units
3.3 V LVTTL /
3.3 V LVCMOS
12 12 High 5 – 1.55 2.47 0.26 1.31 1.58 1.10 2.51 2.04 3.28 3.97 8.29 7.82 ns
3.3 V LVCMOS
Wide Range1,2
100 µA 12 High 35 – 1.55 3.40 0.26 1.66 2.14 1.10 3.40 2.68 4.55 5.49 9.19 8.46 ns
2.5 V LVCMOS 12 12 High 5 – 1.55 2.51 0.26 1.55 1.77 1.10 2.54 2.22 3.36 3.85 8.33 8.00 ns
1.8 V LVCMOS 12 12 High 5 – 1.55 2.75 0.26 1.53 1.96 1.10 2.78 2.40 3.68 4.56 8.57 8.19 ns
1.5 V LVCMOS 12 12 High 5 – 1.55 3.10 0.26 1.72 2.16 1.10 3.15 2.70 3.86 4.68 8.93 8.49 ns
1.2 V LVCMOS 2 2 High 5 – 1.55 4.06 0.26 2.09 2.95 1.10 3.92 3.46 4.01 3.79 9.71 9.24 ns
1.2 V LVCMOS
Wide Range1,3
100 µA 2 High 5 – 1.55 4.06 0.26 2.09 2.95 1.10 3.92 3.46 4.01 3.79 9.71 9.24 ns
3.3 V PCI Per PCI
spec
– High 10 254 1.55 2.76 0.26 1.19 1.63 1.10 2.79 2.16 3.29 3.97 8.58 7.94 ns
3.3 V PCI-X Per
PCI-X
spec
– High 10 254 1.55 2.76 0.25 1.22 1.58 1.10 2.79 2.16 3.29 3.97 8.58 7.94 ns
3.3 V GTL 205– High 10 25 1.55 2.08 0.25 2.76 – 1.10 2.09 2.08 – – 7.88 7.87 ns
2.5 V GTL 205– High 10 25 1.55 2.17 0.25 2.35 – 1.10 2.20 2.13 – – 7.99 7.91 ns
3.3 V GTL+ 35 – High 10 25 1.55 2.12 0.25 1.62 – 1.10 2.14 2.07 – – 7.93 7.85 ns
2.5 V GTL+ 33 – High 10 25 1.55 2.25 0.25 1.55 – 1.10 2.27 2.10 – – 8.06 7.89 ns
HSTL (I) 8 – High 20 50 1.55 3.09 0.25 1.95 – 1.10 3.11 3.09 – – 8.90 8.88 ns
HSTL (II) 15 – High 20 25 1.55 2.94 0.25 1.95 – 1.10 2.98 2.74 – – 8.77 8.53 ns
SSTL2 (I) 15 – High 30 50 1.55 2.18 0.25 1.40 – 1.10 2.21 2.03 – – 7.99 7.82 ns
SSTL2 (II) 18 – High 30 25 1.55 2.21 0.25 1.40 – 1.10 2.24 1.97 – – 8.03 7.76 ns
SSTL3 (I) 14 – High 30 50 1.55 2.33 0.25 1.33 – 1.10 2.36 2.02 – – 8.15 7.81 ns
SSTL3 (II) 21 – High 30 25 1.55 2.13 0.25 1.33 – 1.10 2.16 1.89 – – 7.94 7.67 ns
Notes:
1. The minimum drive strength for any LVCMOS 1.2 V or LVCMOS 3.3 V software configuration when run in wide range is
±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the
IBIS models.
2. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD8-B specification.
3. All LVCMOS 1.2 V software macros support LVCMOS 1.2 V wide range as specified in the JESD8-12 specification.
4. Resistance is used to measure I/O propagation delays as defined in PCI specifications. See Figure 2-12 on page 2-49 for
connectivity. This resistor is not required during normal operation.
5. Output drive strength is below JEDEC specification.
6. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-27
LVDS 24 –High – –1.552.260.251.95–––––––– ns
LVPECL 24 –High – –1.552.170.251.70–––––––– ns
Table 2-26 • Summary of I/O Timing Characteristics—Software Default Settings (continued)
Std. Speed Grade, Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V,
Worst-Case VCCI (per standard)
I/O Standard
Drive Strength (mA)
Equivalent Software Default
Drive Strength Option1 (mA)
Slew Rate
Capacitive Load (pF)
External Resistor ()
tDOUT (ns)
tDP (ns)
tDIN (ns)
tPY (ns)
tPYS (ns)
tEOUT (ns)
tZL (ns)
tZH (ns)
tLZ (ns)
tHZ (ns)
tZLS (ns)
tZHS (ns)
Units
Notes:
1. The minimum drive strength for any LVCMOS 1.2 V or LVCMOS 3.3 V software configuration when run in wide range is
±100 µA. Drive strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the
IBIS models.
2. All LVCMOS 3.3 V software macros support LVCMOS 3.3 V wide range as specified in the JESD8-B specification.
3. All LVCMOS 1.2 V software macros support LVCMOS 1.2 V wide range as specified in the JESD8-12 specification.
4. Resistance is used to measure I/O propagation delays as defined in PCI specifications. See Figure 2-12 on page 2-49 for
connectivity. This resistor is not required during normal operation.
5. Output drive strength is below JEDEC specification.
6. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-28 Revision 11
Detailed I/O DC Characteristics
Table 2-27 • Input Capacitance
Symbol Definition Conditions Min. Max. Units
CIN Input capacitance VIN = 0, f = 1.0 MHz 8 pF
CINCLK Input capacitance on the clock pin VIN = 0, f = 1.0 MHz 8 pF
Table 2-28 • I/O Output Buffer Maximum Resistances1
Standard Drive Strength RPULL-DOWN ()2RPULL-UP ()3
3.3 V LVTTL / 3.3 V LVCMOS 4 mA 100 300
8 mA 50 150
12 mA 25 75
16 mA 17 50
24 mA 11 33
3.3 V LVCMOS Wide Range 100 µA Same as regular
3.3 V LVCMOS
Same as regular
3.3 V LVCMOS
2.5 V LVCMOS 4 mA 100 200
8 mA 50 100
12 mA 25 50
16 mA 20 40
24 mA 11 22
1.8 V LVCMOS 2 mA 200 225
4 mA 100 112
6 mA 50 56
8 mA 50 56
12 mA 20 22
16 mA 20 22
1.5 V LVCMOS 2 mA 200 224
4 mA 100 112
6 mA 67 75
8 mA 33 37
12 mA 33 37
1.2 V LVCMOS4 2 mA 158 164
1.2 V LVCMOS Wide Range4100 µA Same as regular
1.2 V LVCMOS
Same as regular
1.2 V LVCMOS
Notes:
1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend
on VCCI, drive strength selection, temperature, and process. For board design considerations and detailed output buffer
resistances, use the corresponding IBIS models located on the Microsemi SoC Products Group website at
http://www.microsemi.com/soc/techdocs/models/ibis.html.
2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec
3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec
4. Applicable to IGLOOe V2 devices operating in the 1.2 V core range ONLY.
5. Output drive strength is below JEDEC specification.
IGLOOe Low Power Flash FPGAs
Revision 11 2-29
3.3 V PCI/PCI-X Per PCI/PCI-X
specification
25 75
3.3 V GTL 20 mA5 11 –
2.5 V GTL 20 mA5 14 –
3.3 V GTL+ 35 mA 12 –
2.5 V GTL+ 33 mA 15 –
HSTL (I) 8 mA 50 50
HSTL (II) 15 mA 25 25
SSTL2 (I) 15 mA 27 31
SSTL2 (II) 18 mA 13 15
SSTL3 (I) 14 mA 44 69
SSTL3 (II) 21 mA 18 32
Table 2-29 • I/O Weak Pull-Up/Pull-Down Resistances
Minimum and Maximum Weak Pull-Up/Pull-Down Resistance Values
VCCI
R((WEAK PULL-UP)1
()
R(WEAK PULL-DOWN)2
()
Minimum Maximum Minimum Maximum
3.3 V 10 k 45 k 10 k 45 k
3.3 V (wide range I/Os) 10 k 45 k 10 k 45 k
2.5 V 11 k 55 k 12 k 74 k
1.8 V 18 k 70 k 17 k 110 k
1.5 V 19 k 90 k 19 k 140 k
1.2 V 25 k 110 k 25 k 150 k
1.2 V (wide range I/Os) 19 k 110 k 19 k 150 k
Notes:
1. R(WEAK PULL-UP-MAX) = (VCCImax – VOHspec) / I(WEAK PULL-UP-MIN)
2. R(WEAK PULL-DOWN-MAX) = (VOLspec) / I(WEAK PULL-DOWN-MIN)
Table 2-28 • I/O Output Buffer Maximum Resistances1 (continued)
Standard Drive Strength RPULL-DOWN ()2RPULL-UP ()3
Notes:
1. These maximum values are provided for informational reasons only. Minimum output buffer resistance values depend
on VCCI, drive strength selection, temperature, and process. For board design considerations and detailed output buffer
resistances, use the corresponding IBIS models located on the Microsemi SoC Products Group website at
http://www.microsemi.com/soc/techdocs/models/ibis.html.
2. R(PULL-DOWN-MAX) = (VOLspec) / IOLspec
3. R(PULL-UP-MAX) = (VCCImax – VOHspec) / IOHspec
4. Applicable to IGLOOe V2 devices operating in the 1.2 V core range ONLY.
5. Output drive strength is below JEDEC specification.
IGLOOe DC and Switching Characteristics
2-30 Revision 11
Table 2-30 • I/O Short Currents IOSH/IOSL
Drive Strength IOSH (mA)* IOSL (mA)*
3.3 V LVTTL / 3.3 V LVCMOS 4 mA 25 27
8 mA 51 54
12 mA 103 109
16 mA 132 127
24 mA 268 181
3.3 V LVCMOS Wide Range 100 µA Same as regular
3.3 V LVCMOS
Same as regular
3.3 V LVCMOS
2.5 V LVCMOS 4 mA 16 18
8 mA 32 37
12 mA 65 74
16 mA 83 87
24 mA 169 124
1.8 V LVCMOS 2 mA 9 11
4 mA 17 22
6 mA 35 44
8 mA 45 51
12 mA 91 74
16 mA 91 74
1.5 V LVCMOS 2 mA 13 16
4 mA 25 33
6 mA 32 39
8 mA 66 55
12 mA 66 55
1.2 V LVCMOS 2 mA 20 26
1.2 V LVCMOS Wide Range 100 µA 20 26
3.3 V PCI/PCIX Per PCI/PCI-X
Specification
Per PCI Curves
3.3 V GTL 25 mA 268 181
2.5 V GTL 25 mA 169 124
3.3 V GTL+ 35 mA 268 181
2.5 V GTL+ 33 mA 169 124
HSTL (I) 8 mA 32 39
HSTL (II) 15 mA 66 55
SSTL2 (I) 15 mA 83 87
SSTL2 (II) 18 mA 169 124
SSTL3 (I) 14 mA 51 54
SSTL3 (II) 21 mA 103 109
Note: TJ = 100°C
IGLOOe Low Power Flash FPGAs
Revision 11 2-31
The length of time an I/O can withstand IOSH/IOSL events depends on the junction temperature. The
reliability data below is based on a 3.3 V, 36 mA I/O setting, which is the worst case for this type of
analysis.
For example, at 100°C, the short current condition would have to be sustained for more than six months
to cause a reliability concern. The I/O design does not contain any short circuit protection, but such
protection would only be needed in extremely prolonged stress conditions.
Table 2-31 • Duration of Short Circuit Event before Failure
Temperature Time before Failure
–40°C > 20 years
0°C > 20 years
25°C > 20 years
70°C 5 years
85°C 2 years
100°C 6 months
Table 2-32 • Schmitt Trigger Input Hysteresis
Hysteresis Voltage Value (Typ.) for Schmitt Mode Input Buffers
Input Buffer Configuration Hysteresis Value (typ.)
3.3 V LVTTL/LVCMOS/PCI/PCI-X (Schmitt trigger mode) 240 mV
2.5 V LVCMOS (Schmitt trigger mode) 140 mV
1.8 V LVCMOS (Schmitt trigger mode) 80 mV
1.5 V LVCMOS (Schmitt trigger mode) 60 mV
1.2 V LVCMOS (Schmitt trigger mode) 40 mV
Table 2-33 • I/O Input Rise Time, Fall Time, and Related I/O Reliability*
Input Buffer
Input Rise/Fall Time
(min.) Input Rise/Fall Time (max.) Reliability
LVTTL/LVCMOS (Schmitt trigger
disabled)
No requirement 10 ns* 20 years
(100°C)
LVTTL/LVCMOS (Schmitt trigger
enabled)
No requirement No requirement, but input noise
voltage cannot exceed Schmitt
hysteresis.
20 years
(100°C)
HSTL/SSTL/GTL No requirement 10 ns* 10 years
(100°C)
LVDS/B-LVDS/M-LVDS/LVPECL No requirement 10 ns* 10 years
(100°C)
Note: *The maximum input rise/fall time is related to the noise induced into the input buffer trace. If the noise is low,
then the rise time and fall time of input buffers can be increased beyond the maximum value. The longer the
rise/fall times, the more susceptible the input signal is to the board noise. Microsemi recommends signal integrity
evaluation/characterization of the system to ensure that there is no excessive noise coupling into input signals.
IGLOOe DC and Switching Characteristics
2-32 Revision 11
Single-Ended I/O Characteristics
3.3 V LVTTL / 3.3 V LVCMOS
Low-Voltage Transistor–Transistor Logic is a general purpose standard (EIA/JESD) for 3.3 V
applications. It uses an LVTTL input buffer and push-pull output buffer. The 3.3 V LVCMOS standard is
supported as part of the 3.3 V LVTTL support.
Table 2-34 • Minimum and Maximum DC Input and Output Levels
3.3 V LVTTL /
3.3 V LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2
Drive Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
Max.
mA3
Max.
mA3µA4µA4
4 mA –0.3 0.8 2 3.6 0.4 2.4 4 4 25 27 10 10
8 mA –0.3 0.8 2 3.6 0.4 2.4 8 8 51 54 10 10
12 mA –0.3 0.8 2 3.6 0.4 2.4 12 12 103 109 10 10
16 mA –0.3 0.8 2 3.6 0.4 2.4 16 16 132 127 10 10
24 mA –0.3 0.8 2 3.6 0.4 2.4 24 24 268 181 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
4. Currents are measured at 85°C junction temperature.
5. Software default selection highlighted in gray.
Figure 2-7 • AC Loading
Table 2-35 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)
03.31.4–5
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Test Point
Test Point
Enable Path
Datapath 35 pF
R = 1 k R to VCCI for tLZ / tZL / tZLS
R to GND for tHZ / tZH / tZHS
5 pF for tZH / tZHS / tZL / tZLS
5 pF for tHZ / tLZ
IGLOOe Low Power Flash FPGAs
Revision 11 2-33
Timing Characteristics
1.5 V DC Core Voltage
Table 2-36 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V
Drive Strength
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS
Unit
s
4 mA Std. 0.97 4.90 0.18 1.08 1.34 0.66 5.00 3.99 2.27 2.16 8.60 7.59 ns
8 mA Std. 0.97 4.05 0.18 1.08 1.34 0.66 4.13 3.45 2.53 2.65 7.73 7.05 ns
12 mA Std. 0.97 3.44 0.18 1.08 1.34 0.66 3.51 3.05 2.71 2.95 7.11 6.64 ns
16 mA Std. 0.97 3.27 0.18 1.08 1.34 0.66 3.34 2.96 2.74 3.04 6.93 6.55 ns
24 mA Std. 0.97 3.18 0.18 1.08 1.34 0.66 3.24 2.97 2.79 3.36 6.84 6.56 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-37 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V
Drive Strength Speed Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
4 mA Std. 0.97 2.85 0.18 1.08 1.34 0.66 2.92 2.27 2.27 2.27 6.51 5.87 ns
8 mA Std. 0.97 2.39 0.18 1.08 1.34 0.66 2.44 1.88 2.53 2.76 6.03 5.47 ns
12 mA Std. 0.97 2.12 0.18 1.08 1.34 0.66 2.17 1.69 2.71 3.08 5.76 5.28 ns
16 mA Std. 0.97 2.08 0.18 1.08 1.34 0.66 2.12 1.65 2.75 3.17 5.72 5.25 ns
24 mA Std. 0.97 2.10 0.18 1.08 1.34 0.66 2.14 1.60 2.80 3.49 5.74 5.20 ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-34 Revision 11
1.2 V DC Core Voltage
Table 2-38 • 3.3 V LVTTL / 3.3 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V
Drive Strength Speed Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
4 mA Std. 1.55 5.54 0.26 1.31 1.58 1.10 5.63 4.53 2.79 2.87 11.42 10.32 ns
8 mA Std. 1.55 4.60 0.26 1.31 1.58 1.10 4.67 3.94 3.09 3.45 10.45 9.73 ns
12 mA Std. 1.55 3.93 0.26 1.31 1.58 1.10 3.99 3.51 3.28 3.82 9.77 9.29 ns
16 mA Std. 1.55 3.74 0.26 1.31 1.58 1.10 3.79 3.41 3.32 3.92 9.58 9.20 ns
24 mA Std. 1.55 3.64 0.26 1.31 1.58 1.10 3.69 3.42 3.38 4.30 9.48 9.21 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
Table 2-39 • 3.3 V LVTTL / 3.3 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V
Drive Strength Speed Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
4 mA Std. 1.55 3.26 0.26 1.31 1.58 1.10 3.33 2.67 2.79 3.01 9.12 8.46 ns
8 mA Std. 1.55 2.77 0.26 1.31 1.58 1.10 2.80 2.24 3.09 3.59 8.59 8.03 ns
12 mA Std. 1.55 2.47 0.26 1.31 1.58 1.10 2.51 2.04 3.28 3.97 8.29 7.82 ns
16 mA Std. 1.55 2.42 0.26 1.31 1.58 1.10 2.46 2.00 3.33 4.08 8.24 7.79 ns
24 mA Std. 1.55 2.45 0.26 1.31 1.58 1.10 2.48 1.95 3.38 4.46 8.26 7.73 ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-35
3.3 V LVCMOS Wide Range
Table 2-40 • Minimum and Maximum DC Input and Output Levels
3.3 V LVCMOS Wide Range VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2
Drive
Strength
Equivalent
Software Default
Drive Strength
Option3
Min.
(V)
Max.
(V)
Min.
(V)
Max
(V)
Max.
(V)
Min.
(V) µA µA
Max.
(mA)4
Max.
(mA)4µA5µA5
100 µA 2 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 25 27 10 10
100 µA 4 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 25 27 10 10
100 µA 6 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 51 54 10 10
100 µA 8 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 51 54 10 10
100 µA 12 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 103 109 10 10
100 µA 16 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 132 127 10 10
100 µA 24 mA –0.3 0.8 2 3.6 0.2 VDD – 0.2 100 100 268 181 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI . Input current is
larger when operating outside recommended ranges.
3. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive
strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models.
4. Currents are measured at 85°C junction temperature.
5. All LVCMOS 3.3 V software macros supports LVCMOS 3.3 V wide range as specified in the JDEC8a specification.
6. Software default selection highlighted in gray.
Table 2-41 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)
03.31.4–5
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
IGLOOe DC and Switching Characteristics
2-36 Revision 11
Timing Characteristics
1.5 V DC Core Voltage
Table 2-42 • 3.3 V LVCMOS Wide Range Low Slew – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V
Drive
Strength
Equivalent
Software
Default
Drive
Strength
Option1
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
100 µA 4 mA Std. 0.97 7.26 0.18 1.42 1.84 0.66 7.28 5.78 3.18 2.93 10.88 9.38 ns
100 µA 8 mA Std. 0.97 5.94 0.18 1.42 1.84 0.66 5.96 4.96 3.59 3.69 9.56 8.56 ns
100 µA 12 mA Std. 0.97 5.00 0.18 1.42 1.84 0.66 5.02 4.34 3.86 4.16 8.62 7.94 ns
100 µA 16 mA Std. 0.97 4.73 0.18 1.42 1.84 0.66 4.75 4.21 3.92 4.29 8.35 7.81 ns
100 µA 24 mA Std. 0.97 4.59 0.18 1.42 1.84 0.66 4.61 4.23 3.99 4.78 8.21 7.82 ns
Notes:
1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive
strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models.
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-43 • 3.3 V LVCMOS Wide Range High Slew – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.7 V
Drive
Strength
Equivalent
Software
Default
Drive
Strength
Option1
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
100 µA 4 mA Std. 0.97 4.10 0.18 1.42 1.84 0.66 4.12 3.17 3.18 3.11 7.71 6.77 ns
100 µA 8 mA Std. 0.97 3.37 0.18 1.42 1.84 0.66 3.39 2.57 3.59 3.87 6.99 6.16 ns
100 µA 12 mA Std. 0.97 2.96 0.18 1.42 1.84 0.66 2.98 2.28 3.86 4.36 6.58 5.87 ns
100 µA 16 mA Std. 0.97 2.90 0.18 1.42 1.84 0.66 2.92 2.22 3.93 4.49 6.51 5.82 ns
100 µA 24 mA Std. 0.97 2.92 0.18 1.42 1.84 0.66 2.94 2.15 4.00 4.99 6.54 5.75 ns
Notes:
1. The minimum drive strength for any or LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive
strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models.
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
3. Software default selection highlighted in gray.
IGLOOe Low Power Flash FPGAs
Revision 11 2-37
1.2 V DC Core Voltage
Table 2-44 • 3.3 V LVCMOS Wide Range Low Slew – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.7 V
Drive
Strength
Equivalent
Software
Default
Drive
Strength
Option1
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
100 µA 4 mA Std. 1.55 8.14 0.26 1.66 2.14 1.10 8.14 6.46 3.80 3.79 13.93 12.25 ns
100 µA 8 mA Std. 1.55 6.68 0.26 1.66 2.14 1.10 6.68 5.57 4.25 4.69 12.47 11.36 ns
100 µA 12 mA Std. 1.55 5.65 0.26 1.66 2.14 1.10 5.65 4.91 4.55 5.25 11.44 10.69 ns
100 µA 16 mA Std. 1.55 5.36 0.26 1.66 2.14 1.10 5.36 4.76 4.61 5.41 11.14 10.55 ns
100 µA 24 mA Std. 1.55 5.20 0.26 1.66 2.14 1.10 5.20 4.78 4.69 6.00 10.99 10.56 ns
Notes:
1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive
strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
Table 2-45 • 3.3 V LVCMOS Wide Range High Slew – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.7 V
Drive
Strength
Equivalent
Software
Default
Drive
Strength
Option1
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
100 µA 4 mA Std. 1.55 4.65 0.26 1.66 2.14 110 4.65 3.64 3.80 4.00 10.44 9.43 ns
100 µA 8 mA Std. 1.55 3.85 0.26 1.66 2.14 1.10 3.85 2.99 4.25 4.91 9.64 8.77 ns
100 µA 12 mA Std. 1.55 3.40 0.26 1.66 2.14 1.10 3.40 2.68 4.55 5.49 9.19 8.46 ns
100 µA 16 mA Std. 1.55 3.33 0.26 1.66 2.14 1.10 3.33 2.62 4.62 5.65 9.11 8.41 ns
100 µA 24 mA Std. 1.55 3.36 0.26 1.66 2.14 1.10 3.36 2.54 4.71 6.24 9.15 8.32 ns
Notes:
1. The minimum drive strength for any LVCMOS 3.3 V software configuration when run in wide range is ±100 µA. Drive
strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
3. Software default selection highlighted in gray.
IGLOOe DC and Switching Characteristics
2-38 Revision 11
2.5 V LVCMOS
Low-Voltage CMOS for 2.5 V is an extension of the LVCMOS standard (JESD8-5) used for general-
purpose 2.5 V applications.
Table 2-46 • Minimum and Maximum DC Input and Output Levels
2.5 V LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2
Drive
Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
Max.
mA3
Max.
mA3µA4µA4
4 mA –0.3 0.7 1.7 3.6 0.7 1.7 4 4 16 18 10 10
8 mA –0.3 0.7 1.7 3.6 0.7 1.7 8 8 32 37 10 10
12 mA –0.3 0.7 1.7 3.6 0.7 1.7 12 12 65 74 10 10
16 mA –0.3 0.7 1.7 3.6 0.7 1.7 16 16 83 87 10 10
24 mA –0.3 0.7 1.7 3.6 0.7 1.7 24 24 169 124 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
4. Currents are measured at 85°C junction temperature.
5. Software default selection highlighted in gray.
Figure 2-8 • AC Loading
Table 2-47 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)
02.51.2–5
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Test Point
Test Point
Enable Path
Datapath 35 pF
R = 1 k R to VCCI for tLZ / tZL / tZLS
R to GND for tHZ / tZH / tZHS
5 pF for tZH / tZHS / tZL / tZLS
5 pF for tHZ / tLZ
IGLOOe Low Power Flash FPGAs
Revision 11 2-39
Timing Characteristics
1.5 V DC Core Voltage
Table 2-48 • 2.5 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V
Drive Strength
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS
Unit
s
4 mA Std. 0.97 5.55 0.18 1.31 1.41 0.66 5.66 4.75 2.28 1.96 9.26 8.34 ns
8 mA Std. 0.97 4.58 0.18 1.31 1.41 0.66 4.67 4.07 2.58 2.53 8.27 7.66 ns
12 mA Std. 0.97 3.89 0.18 1.31 1.41 0.66 3.97 3.58 2.78 2.91 7.56 7.17 ns
16 mA Std. 0.97 3.68 0.18 1.31 1.41 0.66 3.75 3.47 2.82 3.01 7.35 7.06 ns
24 mA Std. 0.97 3.59 0.18 1.31 1.41 0.66 3.66 3.48 2.88 3.37 7.26 7.08 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-49 • 2.5 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V
Drive Strength
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS
Unit
s
4 mA Std. 0.97 2.94 0.18 1.31 1.41 0.66 3.00 2.68 2.28 2.03 6.60 6.27 ns
8 mA Std. 0.97 2.45 0.18 1.31 1.41 0.66 2.50 2.12 2.58 2.62 6.10 5.72 ns
12 mA Std. 0.97 2.15 0.18 1.31 1.41 0.66 2.20 1.85 2.78 2.98 5.80 5.45 ns
16 mA Std. 0.97 2.10 0.18 1.31 1.41 0.66 2.15 1.80 2.82 3.08 5.75 5.40 ns
24 mA Std. 0.97 2.11 0.18 1.31 1.41 0.66 2.16 1.74 2.88 3.47 5.75 5.33 ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-40 Revision 11
1.2 V DC Core Voltage
Table 2-50 • 2.5 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.3 V
Drive Strength
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
4 mA Std. 1.55 6.25 0.26 1.55 1.77 1.10 6.36 5.34 2.81 2.63 12.14 11.13 ns
8 mA Std. 1.55 5.18 0.26 1.55 1.77 1.10 5.26 4.61 3.13 3.32 11.05 10.39 ns
12 mA Std. 1.55 4.42 0.26 1.55 1.77 1.10 4.49 4.08 3.36 3.76 10.28 9.86 ns
16 mA Std. 1.55 4.19 0.26 1.55 1.77 1.10 4.25 3.96 3.40 3.89 10.04 9.75 ns
24 mA Std. 1.55 4.09 0.26 1.55 1.76 1.10 4.15 3.97 3.47 4.32 9.94 9.76 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
Table 2-51 • 2.5 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.3 V
Drive Strength
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
4 mA Std. 1.55 3.38 0.26 1.55 1.77 1.10 3.42 3.11 2.81 2.72 9.21 8.89 ns
8 mA Std. 1.55 2.83 0.26 1.55 1.77 1.10 2.87 2.51 3.13 3.42 8.66 8.30 ns
12 mA Std. 1.55 2.51 0.26 1.55 1.77 1.10 2.54 2.22 3.36 3.85 8.33 8.00 ns
16 mA Std. 1.55 2.45 0.26 1.55 1.77 1.10 2.48 2.16 3.40 3.97 8.27 7.95 ns
24 mA Std. 1.55 2.46 0.26 1.55 1.77 1.10 2.49 2.09 3.47 4.44 8.28 7.88 ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-41
1.8 V LVCMOS
Low-Voltage CMOS for 1.8 V is an extension of the LVCMOS standard (JESD8-5) used for general-
purpose 1.8 V applications. It uses a 1.8 V input buffer and a push-pull output buffer.
Table 2-52 • Minimum and Maximum DC Input and Output Levels
1.8 V
LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2
Drive
Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
Max.
mA3
Max.
mA3µA4µA4
2 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 2 2 9 11 10 10
4 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 4 4 17 22 10 10
6 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 6 6 35 44 10 10
8 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 8 8 45 51 10 10
12 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 12 12 91 74 10 10
16 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.45 VCCI – 0.45 16 16 91 74 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
4. Currents are measured at 85°C junction temperature.
5. Software default selection highlighted in gray.
Figure 2-9 • AC Loading
Table 2-53 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)
01.80.9–5
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Test Point
Test Point
Enable Path
Datapath 35 pF
R = 1 k R to VCCI for tLZ / tZL / tZLS
R to GND for tHZ / tZH / tZHS
5 pF for tZH / tZHS / tZL / tZLS
5 pF for tHZ / tLZ
IGLOOe DC and Switching Characteristics
2-42 Revision 11
Timing Characteristics
1.5 V DC Core Voltage
Table 2-54 • 1.8 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V
Drive Strength
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
2 mA Std. 0.97 7.33 0.18 1.27 1.59 0.66 7.47 6.18 2.34 1.18 11.07 9.77 ns
4 mA Std. 0.97 6.07 0.18 1.27 1.59 0.66 6.20 5.25 2.69 2.42 9.79 8.84 ns
6 mA Std. 0.97 5.18 0.18 1.27 1.59 0.66 5.29 4.61 2.93 2.88 8.88 8.21 ns
8 mA Std. 0.97 4.88 0.18 1.27 1.59 0.66 4.98 4.48 2.99 3.01 8.58 8.08 ns
12 mA Std. 0.97 4.80 0.18 1.27 1.59 0.66 4.89 4.49 3.07 3.47 8.49 8.09 ns
16 mA Std. 0.97 4.80 0.18 1.27 1.59 0.66 4.89 4.49 3.07 3.47 8.49 8.09 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-55 • 1.8 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.7 V
Drive Strength
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
2 mA Std. 0.97 3.43 0.18 1.27 1.59 0.66 3.51 3.39 2.33 1.19 7.10 6.98 ns
4 mA Std. 0.97 2.83 0.18 1.27 1.59 0.66 2.89 2.59 2.69 2.49 6.48 6.18 ns
6 mA Std. 0.97 2.45 0.18 1.27 1.59 0.66 2.51 2.19 2.93 2.95 6.10 5.79 ns
8 mA Std. 0.97 2.38 0.18 1.27 1.59 0.66 2.43 2.12 2.98 3.08 6.03 5.71 ns
12 mA Std. 0.97 2.37 0.18 1.27 1.59 0.66 2.42 2.03 3.07 3.57 6.02 5.62 ns
16 mA Std. 0.97 2.37 0.18 1.27 1.59 0.66 2.42 2.03 3.07 3.57 6.02 5.62 ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-43
1.2 V DC Core Voltage
Table 2-56 • 1.8 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.7 V
Drive Strength
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
2 mA Std. 1.55 8.21 0.26 1.53 1.96 1.10 8.35 6.88 2.87 1.70 14.14 12.67 ns
4 mA Std. 1.55 6.83 0.26 1.53 1.96 1.10 6.94 5.88 3.27 3.18 12.73 11.67 ns
6 mA Std. 1.55 5.85 0.26 1.53 1.96 1.10 5.94 5.19 3.53 3.37 11.73 10.98 ns
8 mA Std. 1.55 5.52 0.26 1.53 1.96 1.10 5.61 5.06 3.59 3.88 11.39 10.84 ns
12 mA Std. 1.55 5.42 0.26 1.53 1.96 1.10 5.51 5.06 3.68 4.44 11.30 10.85 ns
16 mA Std. 1.55 5.42 0.26 1.53 1.96 1.10 5.51 5.06 3.68 4.44 11.30 10.85 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
Table 2-57 • 1.8 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.7 V
Drive Strength
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
2 mA Std. 1.55 3.82 0.26 1.53 1.96 1.10 3.98 3.87 2.86 1.72 9.76 9.66 ns
4 mA Std. 1.55 3.25 0.26 1.53 1.96 1.10 3.30 3.01 3.26 3.26 9.08 8.79 ns
6 mA Std. 1.55 2.84 0.26 1.53 1.96 1.10 2.88 2.58 3.53 3.81 8.66 8.37 ns
8 mA Std. 1.55 2.76 0.26 1.53 1.96 1.10 2.80 2.50 3.58 3.97 8.58 8.29 ns
12 mA Std. 1.55 2.75 0.26 1.53 1.96 1.10 2.78 2.40 3.68 4.56 8.57 8.19 ns
16 mA Std. 1.55 2.75 0.26 1.53 1.96 1.10 2.78 2.40 3.68 4.56 8.57 8.19 ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-44 Revision 11
1.5 V LVCMOS (JESD8-11)
Low-Voltage CMOS for 1.5 V is an extension of the LVCMOS standard (JESD8-5) used for general-
purpose 1.5 V applications. It uses a 1.5 V input buffer and a push-pull output buffer.
Table 2-58 • Minimum and Maximum DC Input and Output Levels
1.5 V
LVCMOS VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2
Drive
Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
Max.
mA3
Max.
mA3µA4µA4
2 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 2 2 13 16 10 10
4 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 4 4 25 33 10 10
6 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 6 6 32 39 10 10
8 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 8 8 66 55 10 10
12 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 12 12 66 55 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
4. Currents are measured at 85°C junction temperature.
5. Software default selection highlighted in gray.
Figure 2-10 • AC Loading
Table 2-59 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)
0 1.5 0.75 – 5
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Test Point
Test Point
Enable Path
Datapath 35 pF
R = 1 k R to VCCI for tLZ / tZL / tZLS
R to GND for tHZ / tZH / tZHS
5 pF for tZH / tZHS / tZL / tZLS
5 pF for tHZ / tLZ
IGLOOe Low Power Flash FPGAs
Revision 11 2-45
Timing Characteristics
1.5 V DC Core Voltage
Table 2-60 • 1.5 V LVCMOS Low Slew – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V
Drive Strength
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
2 mA Std. 0.97 7.61 0.18 1.47 1.77 0.66 7.76 6.33 2.81 2.34 11.36 9.92 ns
4 mA Std. 0.97 6.54 0.18 1.47 1.77 0.66 6.67 5.56 3.09 2.88 10.26 9.16 ns
6 mA Std. 0.97 6.15 0.18 1.47 1.77 0.66 6.27 5.42 3.15 3.02 9.87 9.02 ns
8 mA Std. 0.97 6.07 0.18 1.47 1.77 0.66 6.20 5.42 2.64 3.56 9.79 9.02 ns
12 mA Std. 0.97 6.07 0.18 1.47 1.77 0.66 6.20 5.42 2.64 3.56 9.79 9.02 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-61 • 1.5 V LVCMOS High Slew – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 1.4 V
Drive Strength
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
2 mA Std. 0.97 3.25 0.18 1.47 1.77 0.66 3.32 3.00 2.80 2.43 6.92 6.59 ns
4 mA Std. 0.97 2.81 0.18 1.47 1.77 0.66 2.87 2.51 3.08 2.97 6.46 6.10 ns
6 mA Std. 0.97 2.72 0.18 1.47 1.77 0.66 2.78 2.41 3.14 3.12 6.37 6.01 ns
8 mA Std. 0.97 2.69 0.18 1.47 1.77 0.66 2.75 2.30 3.24 3.67 6.35 5.89 ns
12 mA Std. 0.97 2.69 0.18 1.47 1.77 0.66 2.75 2.30 3.24 3.67 6.35 5.89 ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-46 Revision 11
1.2 V DC Core Voltage
Table 2-62 • 1.5 V LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.4 V
Drive Strength
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
2 mA Std. 1.55 8.53 0.26 1.72 2.16 1.10 8.67 7.05 3.39 3.09 14.46 12.83 ns
4 mA Std. 1.55 7.34 0.26 1.72 2.16 1.10 7.46 6.22 3.70 3.73 13.25 12.01 ns
6 mA Std. 1.55 6.91 0.26 1.72 2.16 1.10 7.03 6.07 3.77 3.90 12.82 11.85 ns
8 mA Std. 1.55 6.83 0.26 1.72 2.16 1.10 6.94 6.07 2.91 4.54 12.73 11.86 ns
12 mA Std. 1.55 6.83 0.26 1.72 2.16 1.10 6.94 6.07 2.91 4.54 12.73 11.86 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
Table 2-63 • 1.5 V LVCMOS High Slew – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.4 V
Drive Strength
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
2 mA Std. 1.55 3.72 0.26 1.72 2.16 1.10 3.78 3.45 3.38 3.19 9.56 9.24 ns
4 mA Std. 1.55 3.23 0.26 1.72 2.16 1.10 3.27 2.92 3.69 3.83 9.06 8.71 ns
6 mA Std. 1.55 3.13 0.26 1.72 2.16 1.10 3.18 2.82 3.76 4.01 8.96 8.61 ns
8 mA Std. 1.55 3.10 0.26 1.72 2.16 1.10 3.15 2.70 3.86 4.68 8.93 8.49 ns
12 mA Std. 1.55 3.10 0.26 1.72 2.16 1.10 3.15 2.70 3.86 4.68 8.93 8.49 ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-47
1.2 V LVCMOS (JESD8-12A)
Low-Voltage CMOS for 1.2 V complies with the LVCMOS standard JESD8-12A for general purpose 1.2 V
applications. It uses a 1.2 V input buffer and a push-pull output buffer.
Table 2-64 • Minimum and Maximum DC Input and Output Levels
Applicable to Advanced I/O Banks
1.2 V
LVCMOS1VIL VIH VOL VOH IOL IOH IOSH IOSL IIL2IIH3
Drive
Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
Max.
mA4
Max.
mA4µA5µA5
2 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 2 2 20 26 10 10
Notes:
1. Applicable to V2 devices ONLY.
2. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.
3. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
4. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
5. Currents are measured at 85°C junction temperature.
6. Software default selection highlighted in gray.
Figure 2-11 • AC Loading
Table 2-65 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)
01.20.6–5
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Test Point
Test Point
Enable Path
Datapath 5 pF
R = 1 k R to VCCI for tLZ / tZL / tZLS
R to GND for tHZ / tZH / tZHS
5 pF for tZH / tZHS / tZL / tZLS
5 pF for tHZ / tLZ
IGLOOe DC and Switching Characteristics
2-48 Revision 11
Timing Characteristics
1.2 V DC Core Voltage
1.2 V LVCMOS Wide Range
Timing Characteristics
Refer to LVCMOS 1.2 V (normal range) "Timing Characteristics" on page 2-48 for worst-case timing.
Table 2-66 • 1.2 LVCMOS Low Slew – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.14 V
Drive Strength
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
2 mA Std. 1.55 9.92 0.26 2.09 2.95 1.10 9.53 7.48 4.02 3.67 15.31 13.26 ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
Table 2-67 • 1.2 LVCMOS High Slew – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ= 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 1.14 V
Drive Strength
Speed
Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
2 mA Std. 1.55 4.06 0.26 2.09 2.95 1.10 3.92 3.46 4.01 3.79 9.71 9.24 ns
Notes:
1. Software default selection highlighted in gray.
2. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
Table 2-68 • Minimum and Maximum DC Input and Output Levels
1.2 V LVCMOS
Wide Range1VIL VIH VOL VOH IOL IOH IOSH IOSL IIL2IIH3
Drive
Strength
Equivalent
Software
Default
Drive
Strength
Option4
Min.
(V)
Max.
(V)
Min.
(V)
Max
(V)
Max.
(V)
Min.
(V) µA µA
Max.
(mA)5
Max.
(mA)5µA6µA6
100 µA 2 mA –0.3 0.35 * VCCI 0.65 * VCCI 3.6 0.25 * VCCI 0.75 * VCCI 100 100 20 26 10 10
Notes:
1. Applicable to V2 devices ONLY.
2. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.
3. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI . Input current is
larger when operating outside recommended ranges.
4. The minimum drive strength for any LVCMOS 1.2 V software configuration when run in wide range is ±100 µA. Drive
strength displayed in the software is supported for normal range only. For a detailed I/V curve, refer to the IBIS models.
5. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
6. Currents are measured at 85°C junction temperature.
7. Software default selection highlighted in gray.
IGLOOe Low Power Flash FPGAs
Revision 11 2-49
3.3 V PCI, 3.3 V PCI-X
Peripheral Component Interface for 3.3 V standard specifies support for 33 MHz and 66 MHz PCI Bus
applications.
AC loadings are defined per the PCI/PCI-X specifications for the datapath; Microsemi loadings for enable
path characterization are described in Figure 2-12.
AC loadings are defined per PCI/PCI-X specifications for the datapath; Microsemi loading for tristate is
described in Tabl e 2-7 0.
Table 2-69 • Minimum and Maximum DC Input and Output Levels
3.3 V PCI/PCI-X VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2
Drive Strength
Min.
V
Max.
V
Min.,
V
Max.
V
Max.
V
Min.
VmAmA
Max.
mA3
Max.
mA3µA4µA4
Per PCI
specification
Per PCI curves 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operation conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI . Input current is
larger when operating outside recommended ranges.
3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
4. Currents are measured at 85°C junction temperature.
Figure 2-12 • AC Loading
Test Point
Enable Path
R to VCCI for tLZ / tZL / tZLS
10 pF for tZH / tZHS / tZL / tZLS
10 pF for tHZ / tLZ
R to GND for tHZ / tZH / tZHS
R = 1 k
Test Point
Datapath
R = 25 R to VCCI for tDP (F)
R to GND for tDP (R)
Table 2-70 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) CLOAD (pF)
0 3.3 0.285 * VCCI for tDP(R)
0.615 * VCCI for tDP(F)
–10
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
IGLOOe DC and Switching Characteristics
2-50 Revision 11
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-71 • 3.3 V PCI/PCI-X – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V
Speed Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 0.97 2.38 0.18 0.96 1.42 0.66 2.43 1.80 2.72 3.08 6.03 5.39 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-72 • 3.3 V PCI/PCI-X – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V
Speed Grade tDOUT tDP tDIN tPY tPYS tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 1.55 2.76 0.26 1.19 1.63 1.10 2.79 2.16 3.29 3.97 8.58 7.94 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-51
Voltage-Referenced I/O Characteristics
3.3 V GTL
Gunning Transceiver Logic is a high-speed bus standard (JESD8-3). It provides a differential amplifier
input buffer and an open-drain output buffer. The VCCI pin should be connected to 3.3 V.
Table 2-73 • Minimum and Maximum DC Input and Output Levels
3.3 V GTL VIL VIH VOL VOH IOL IOH IOSL IOSH IIL1IIH2
Drive
Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max
V
Min.
VmAmA
Max.
mA3
Max.
mA3µA4µA4
20 mA5 –0.3 VREF – 0.05 VREF + 0.05 3.6 0.4 – 20 20 268 181 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operating conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
4. Currents are measured at 85°C junction temperature.
5. Output drive strength is below JEDEC specification.
Figure 2-13 • AC Loading
Table 2-74 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)
VREF – 0.05 VREF + 0.05 0.8 0.8 1.2 10
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Test Point
10 pF
25
GTL
VTT
IGLOOe DC and Switching Characteristics
2-52 Revision 11
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-75 • 3.3 V GTL – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCI = 3.0 V VREF = 0.8 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 0.98 1.83 0.19 2.41 0.67 1.84 1.83 5.47 5.46 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-76 • 3.3 V GTL – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V,
Worst-Case VCCI = 3.0 V VREF = 0.8 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 1.55 2.09 0.26 2.75 1.10 2.10 2.09 7.91 7.89 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-53
2.5 V GTL
Gunning Transceiver Logic is a high-speed bus standard (JESD8-3). It provides a differential amplifier
input buffer and an open-drain output buffer. The VCCI pin should be connected to 2.5 V.
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-77 • Minimum and Maximum DC Input and Output Levels
2.5 GTL VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2
Drive
Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
Max.
mA3
Max.
mA3µA4µA4
20 mA5 –0.3 VREF – 0.05 VREF + 0.05 3.6 0.4 – 20 20 169 124 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operating conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
4. Currents are measured at 85°C junction temperature.
5. Output drive strength is below JEDEC specification.
Figure 2-14 • AC Loading
Table 2-78 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)
VREF – 0.05 VREF + 0.05 0.8 0.8 1.2 10
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Test Point
10 pF
25
GTL
VTT
Table 2-79 • 2.5 V GTL – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCI = 3.0 V VREF = 0.8 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 0.98 1.90 0.19 2.04 0.67 1.94 1.87 5.57 5.50 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-80 • 2.5 V GTL – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V,
Worst-Case VCCI = 3.0 V VREF = 0.8 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 1.55 2.16 0.26 2.35 1.10 2.20 2.13 8.01 7.94 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-54 Revision 11
3.3 V GTL+
Gunning Transceiver Logic Plus is a high-speed bus standard (JESD8-3). It provides a differential
amplifier input buffer and an open-drain output buffer. The VCCI pin should be connected to 3.3 V
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-81 • Minimum and Maximum DC Input and Output Levels
3.3 V GTL+ VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2
Drive
Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
Max.
mA3
Max.
mA3µA4µA4
35 mA –0.3 VREF – 0.1 VREF + 0.1 3.6 0.6 – 35 35 268 181 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operating conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
4. Currents are measured at 85°C junction temperature.
Figure 2-15 • AC Loading
Table 2-82 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)
VREF – 0.1 VREF + 0.1 1.0 1.0 1.5 10
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Test Point
10 pF
25
GTL+
VTT
Table 2-83 • 3.3 V GTL+ – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCI = 3.0 V VREF = 1.0 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 0.98 1.85 0.19 1.35 0.67 1.88 1.81 5.51 5.44 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-84 • 3.3 V GTL+ – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V,
Worst-Case VCCI = 3.0 V VREF = 1.0 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 1.55 2.11 0.26 1.61 1.10 2.15 2.07 7.95 7.88 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-55
2.5 V GTL+
Gunning Transceiver Logic Plus is a high-speed bus standard (JESD8-3). It provides a differential
amplifier input buffer and an open-drain output buffer. The VCCI pin should be connected to 2.5 V.
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-85 • Minimum and Maximum DC Input and Output Levels
2.5 V GTL+ VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2
Drive
Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
Max.
mA3
Max.
mA3µA4µA4
33 mA –0.3 VREF – 0.1 VREF + 0.1 3.6 0.6 – 33 33 169 124 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operating conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
4. Currents are measured at 85°C junction temperature.
Figure 2-16 • AC Loading
Table 2-86 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)
VREF – 0.1 VREF + 0.1 1.0 1.0 1.5 10
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Test Point
10 pF
25
GTL+
VTT
Table 2-87 • 2.5 V GTL+ – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCI = 2.3 V VREF = 1.0 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 0.98 1.97 0.19 1.29 0.67 2.00 1.84 5.63 5.47 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-88 • 2.5 V GTL+ – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V,
Worst-Case VCCI = 2.3 V VREF = 1.0 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 1.55 2.23 0.26 1.55 1.10 2.28 2.11 8.08 7.91 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-56 Revision 11
HSTL Class I
High-Speed Transceiver Logic is a general-purpose high-speed 1.5 V bus standard (EIA/JESD8-6).
IGLOOe devices support Class I. This provides a differential amplifier input buffer and a push-pull output
buffer.
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-89 • Minimum and Maximum DC Input and Output Levels
HSTL Class
I VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2
Drive
Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
Max.
mA3
Max.
mA3µA4µA4
8 mA –0.3 VREF – 0.1 VREF + 0.1 3.6 0.4 VCCI – 0.4 8 8 32 39 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operating conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
4. Currents are measured at 85°C junction temperature.
Figure 2-17 • AC Loading
Table 2-90 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)
VREF – 0.1 VREF + 0.1 0.75 0.75 0.75 20
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Test Point
20 pF
50
HSTL
Class I
VTT
Table 2-91 • HSTL Class I – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCI = 1.4 V VREF = 0.75 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 0.98 2.74 0.19 1.77 0.67 2.79 2.73 6.42 6.36 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-92 • HSTL Class I – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V,
Worst-Case VCCI = 1.4 V VREF = 0.75 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 1.55 3.10 0.26 1.94 1.10 3.12 3.10 8.93 8.91 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-57
HSTL Class II
High-Speed Transceiver Logic is a general-purpose high-speed 1.5 V bus standard (EIA/JESD8-6).
IGLOOe devices support Class II. This provides a differential amplifier input buffer and a push-pull output
buffer.
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-93 • Minimum and Maximum DC Input and Output Levels
HSTL
Class II VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2
Drive
Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
Max.
mA3
Max.
mA3µA4µA4
15 mA5 –0.3 VREF – 0.1 VREF + 0.1 3.6 0.4 VCCI – 0.4 15 15 66 55 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operating conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
4. Currents are measured at 85°C junction temperature.
5. Output drive strength is below JEDEC specification.
Figure 2-18 • AC Loading
Table 2-94 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)
VREF – 0.1 VREF + 0.1 0.75 0.75 0.75 20
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Test Point
20 pF
25
HSTL
Class II
VTT
Table 2-95 • HSTL Class II – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCI = 1.4 V VREF = 0.75 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 0.98 2.62 0.19 1.77 0.67 2.66 2.40 6.29 6.03 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-96 • HSTL Class II – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V,
Worst-Case VCCI = 1.4 V VREF = 0.75 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 1.55 2.93 0.26 1.94 1.10 2.98 2.75 8.79 8.55 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-58 Revision 11
SSTL2 Class I
Stub-Speed Terminated Logic for 2.5 V memory bus standard (JESD8-9). IGLOOe devices support Class
I. This provides a differential amplifier input buffer and a push-pull output buffer.
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-97 • Minimum and Maximum DC Input and Output Levels
SSTL2
Class I VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2
Drive
Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
Max.
mA3
Max.
mA3µA4µA4
15 mA –0.3 VREF – 0.2 VREF + 0.2 3.6 0.54 VCCI – 0.62 15 15 83 87 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operating conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
4. Currents are measured at 85°C junction temperature.
Figure 2-19 • AC Loading
Table 2-98 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)
VREF – 0.2 VREF + 0.2 1.25 1.25 1.25 30
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Test Point
30 pF
50
25
SSTL2
Class I
V
TT
Table 2-99 • SSTL 2 Class I – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCI = 2.3 V VREF = 1.25 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 0.98 1.91 0.19 1.15 0.67 1.94 1.72 5.57 5.35 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-100 • SSTL 2 Class I – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V,
Worst-Case VCCI = 2.3 V VREF = 1.25 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 1.55 2.17 0.26 1.39 1.10 2.21 2.04 8.02 7.84 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-59
SSTL2 Class II
Stub-Speed Terminated Logic for 2.5 V memory bus standard (JESD8-9). IGLOOe devices support Class
II. This provides a differential amplifier input buffer and a push-pull output buffer.
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-101 • Minimum and Maximum DC Input and Output Levels
SSTL2
Class II VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2
Drive
Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
Max.
mA3
Max.
mA3µA4µA4
18 mA –0.3 VREF – 0.2 VREF + 0.2 3.6 0.35 VCCI – 0.43 18 18 169 124 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operating conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
4. Currents are measured at 85°C junction temperature.
Figure 2-20 • AC Loading
Table 2-102 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input HIGH (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)
VREF – 0.2 VREF + 0.2 1.25 1.25 1.25 30
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Test Point
30 pF
25
25
SSTL2
Class II
V
TT
Table 2-103 • SSTL 2 Class II – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCI = 2.3 V VREF = 1.25 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 0.98 1.94 0.19 1.15 0.67 1.97 1.66 5.60 5.29 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-104 • SSTL 2 Class II – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V,
Worst-Case VCCI = 2.3 V VREF = 1.25 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 1.55 2.20 0.26 1.39 1.10 2.24 1.97 8.05 7.78 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-60 Revision 11
SSTL3 Class I
Stub-Speed Terminated Logic for 3.3 V memory bus standard (JESD8-8). IGLOOe devices support Class
I. This provides a differential amplifier input buffer and a push-pull output buffer.
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-105 • Minimum and Maximum DC Input and Output Levels
SSTL3 Class I VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2
Drive
Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
Max.
mA3
Max.
mA3µA4µA4
14 mA –0.3 VREF – 0.2 VREF + 0.2 3.6 0.7 VCCI – 1.1 14 14 51 54 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operating conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
4. Currents are measured at 85°C junction temperature.
Figure 2-21 • AC Loading
Table 2-106 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)
VREF – 0.2 VREF + 0.2 1.5 1.5 1.485 30
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Test Point
30 pF
50
25
SSTL3
Class I
V
TT
Table 2-107 • SSTL 3 Class I – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCI = 3.0 V VREF = 1.5 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 0.98 2.05 0.19 1.09 0.67 2.09 1.71 5.72 5.34 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-108 • SSTL 3 Class I – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V,
Worst-Case VCCI = 3.0 V VREF = 1.5 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 1.55 2.32 0.26 1.32 1.10 2.37 2.02 8.17 7.83 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-61
SSTL3 Class II
Stub-Speed Terminated Logic for 3.3 V memory bus standard (JESD8-8). IGLOOe devices support Class
II. This provides a differential amplifier input buffer and a push-pull output buffer.
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-109 • Minimum and Maximum DC Input and Output Levels
SSTL3 Class II VIL VIH VOL VOH IOL IOH IOSH IOSL IIL1IIH2
Drive Strength
Min.
V
Max.
V
Min.
V
Max.
V
Max.
V
Min.
VmAmA
Max.
mA3
Max.
mA3µA4µA4
21 mA –0.3 VREF – 0.2 VREF + 0.2 3.6 0.5 VCCI – 0.9 21 21 103 109 10 10
Notes:
1. IIL is the input leakage current per I/O pin over recommended operating conditions where –0.3 V < VIN < VIL.
2. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
3. Currents are measured at high temperature (100°C junction temperature) and maximum voltage.
4. Currents are measured at 85°C junction temperature.
Figure 2-22 • AC Loading
Table 2-110 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V) VTT (typ.) (V) CLOAD (pF)
VREF – 0.2 VREF + 0.2 1.5 1.5 1.485 30
Note: Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Test Point
30 pF
25
25
SSTL3
Class II
V
TT
Table 2-111 • SSTL 3 Class II – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V,
Worst-Case VCCI = 3.0 V VREF = 1.5 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 0.98 1.86 0.19 1.09 0.67 1.89 1.58 5.52 5.21 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-112 • SSTL 3 Class II – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V,
Worst-Case VCCI = 3.0 V VREF = 1.5 V
Speed Grade tDOUT tDP tDIN tPY tEOUT tZL tZH tLZ tHZ tZLS tZHS Units
Std. 1.55 2.12 0.26 1.32 1.10 2.16 1.89 7.97 7.70 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-62 Revision 11
Differential I/O Characteristics
Physical Implementation
Configuration of the I/O modules as a differential pair is handled by the Microsemi Designer software
when the user instantiates a differential I/O macro in the design.
Differential I/Os can also be used in conjunction with the embedded Input Register (InReg), Output
Register (OutReg), Enable Register (EnReg), and DDR. However, there is no support for bidirectional
I/Os or tristates with the LVPECL standards.
LVDS
Low-Voltage Differential Signaling (ANSI/TIA/EIA-644) is a high-speed, differential I/O standard. It
requires that one data bit be carried through two signal lines, so two pins are needed. It also requires
external resistor termination.
The full implementation of the LVDS transmitter and receiver is shown in an example in Figure 2-23. The
building blocks of the LVDS transmitter-receiver are one transmitter macro, one receiver macro, three
board resistors at the transmitter end, and one resistor at the receiver end. The values for the three driver
resistors are different from those used in the LVPECL implementation because the output standard
specifications are different.
Along with LVDS I/O, IGLOOe also supports Bus LVDS structure and Multipoint LVDS (M-LVDS)
configuration (up to 40 nodes).
Figure 2-23 • LVDS Circuit Diagram and Board-Level Implementation
140 100
Z
0
= 50
Z
0
= 50
165
165
+
–
P
N
P
N
INBUF_LVDS
OUTBUF_LVDS
FPGA FPGA
Bourns Part Number: CAT16-LV4F12
IGLOOe Low Power Flash FPGAs
Revision 11 2-63
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-113 • Minimum and Maximum DC Input and Output Levels
DC Parameter Description Min. Typ. Max. Units
VCCI Supply Voltage 2.375 2.5 2.625 V
VOL Output Low Voltage 0.9 1.075 1.25 V
VOH Output High Voltage 1.25 1.425 1.6 V
IOL1Output Lower Current 0.65 0.91 1.16 mA
IOH1Output High Current 0.65 0.91 1.16 mA
VI Input Voltage 0 2.925 V
IIH2,3 Input High Leakage Current 10 µA
IIL2,4 Input Low Leakage Current 10 µA
VODIFF Differential Output Voltage 250 350 450 mV
VOCM Output Common Mode Voltage 1.125 1.25 1.375 V
VICM Input Common Mode Voltage 0.05 1.25 2.35 V
VIDIFF Input Differential Voltage 100 350 mV
Notes:
1. IOL/IOH is defined by VODIFF/(resistor network).
2. Currents are measured at 85°C junction temperature.
3. IIH is the input leakage current per I/O pin over recommended operating conditions VIH < VIN < VCCI. Input current is
larger when operating outside recommended ranges.
4. IIL is the input leakage current per I/O pin over recommended operating conditions where –0.3 V < VIN < VIL.
Table 2-114 • AC Waveforms, Measuring Points, and Capacitive Loads
Input Low (V) Input High (V) Measuring Point* (V) VREF (typ.) (V)
1.075 1.325 Cross point –
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Table 2-115 • LVDS – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 2.3 V
Speed Grade tDOUT tDP tDIN tPY Units
Std. 0.98 1.77 0.19 1.62 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-116 • LVDS – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 2.3 V
Speed Grade tDOUT tDP tDIN tPY Units
Std. 1.55 2.19 0.26 1.88 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-64 Revision 11
B-LVDS/M-LVDS
Bus LVDS (B-LVDS) and Multipoint LVDS (M-LVDS) specifications extend the existing LVDS standard to
high-performance multipoint bus applications. Multidrop and multipoint bus configurations may contain
any combination of drivers, receivers, and transceivers. Microsemi LVDS drivers provide the higher drive
current required by B-LVDS and M-LVDS to accommodate the loading. The drivers require series
terminations for better signal quality and to control voltage swing. Termination is also required at both
ends of the bus since the driver can be located anywhere on the bus. These configurations can be
implemented using the TRIBUF_LVDS and BIBUF_LVDS macros along with appropriate terminations.
Multipoint designs using Microsemi LVDS macros can achieve up to 200 MHz with a maximum of 20
loads. A sample application is given in Figure 2-24. The input and output buffer delays are available in
the LVDS section in Table 2-115 on page 2-63 and Table 2-116 on page 2-63.
Example: For a bus consisting of 20 equidistant loads, the following terminations provide the required
differential voltage, in worst-case Industrial operating conditions, at the farthest receiver: RS=60 and
RT=70, given Z0=50 (2") and Zstub =50 (~1.5").
LVPECL
Low-Voltage Positive Emitter-Coupled Logic (LVPECL) is another differential I/O standard. It requires
that one data bit be carried through two signal lines. Like LVDS, two pins are needed. It also requires
external resistor termination.
The full implementation of the LVDS transmitter and receiver is shown in an example in Figure 2-25. The
building blocks of the LVPECL transmitter-receiver are one transmitter macro, one receiver macro, three
board resistors at the transmitter end, and one resistor at the receiver end. The values for the three driver
resistors are different from those used in the LVDS implementation because the output standard
specifications are different.
Figure 2-24 • B-LVDS/M-LVDS Multipoint Application Using LVDS I/O Buffers
...
RTRT
BIBUF_LVDS
R
+
-
T
+
-
R
+
-
T
+
-
D
+
-
EN EN EN EN EN
Receiver Transceiver Receiver TransceiverDriver
RSRSRSRSRSRSRSRS
RSRS
Zstub Zstub Zstub Zstub Zstub Zstub Zstub Zstub
Z0
Z0
Z0
Z0
Z0
Z0
Z0
Z0
Z0
Z0
Z0
Z0
Figure 2-25 • LVPECL Circuit Diagram and Board-Level Implementation
187 W 100
Z0 = 50
Z0 = 50
100
100
+
–
P
N
P
N
INBUF_LVPECL
OUTBUF_LVPECL
FPGA FPGA
Bourns Part Number: CAT16-PC4F12
IGLOOe Low Power Flash FPGAs
Revision 11 2-65
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-117 • Minimum and Maximum DC Input and Output Levels
DC Parameter Description Min. Max. Min. Max. Min. Max. Units
VCCI Supply Voltage 3.0 3.3 3.6 V
VOL Output Low Voltage 0.96 1.27 1.06 1.43 1.30 1.57 V
VOH Output High Voltage 1.8 2.11 1.92 2.28 2.13 2.41 V
VIL, VIH Input Low, Input High Voltages 0 3.6 0 3.6 0 3.6 V
VODIFF Differential Output Voltage 0.625 0.97 0.625 0.97 0.625 0.97 V
VOCM Output Common Mode Voltage 1.762 1.98 1.762 1.98 1.762 1.98 V
VICM Input Common Mode Voltage 1.01 2.57 1.01 2.57 1.01 2.57 V
VIDIFF Input Differential Voltage 300 300 300 mV
Table 2-118 • AC Waveforms, Measuring Points, and Capacitive Loads
Input LOW (V) Input HIGH (V) Measuring Point* (V) VREF (typ.) (V)
1.64 1.94 Cross point –
Note: *Measuring point = Vtrip. See Table 2-23 on page 2-23 for a complete table of trip points.
Table 2-119 • LVPECL – Applies to 1.5 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V, Worst-Case VCCI = 3.0 V
Speed Grade tDOUT tDP tDIN tPY Units
Std. 0.98 1.75 0.19 1.45 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-120 • LVPECL – Applies to 1.2 V DC Core Voltage
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V, Worst-Case VCCI = 3.0 V
Speed Grade tDOUT tDP tDIN tPY Units
Std. 1.55 2.16 0.26 1.70 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-66 Revision 11
I/O Register Specifications
Fully Registered I/O Buffers with Synchronous Enable and
Asynchronous Preset
Figure 2-26 • Timing Model of Registered I/O Buffers with Synchronous Enable and Asynchronous Preset
INBUF
INBUF INBUF
TRIBUF
CLKBUF
INBUF
INBUF
CLKBUF
Data Input I/O Register with:
Active High Enable
Active High Preset
Positive-Edge Triggered
Data Output Register and
Enable Output Register with:
Active High Enable
Active High Preset
Postive-Edge Triggered
Pad Out
CLK
Enable
Preset
Data_out
Data
EOUT
DOUT
Enable
CLK
DQ
DFN1E1P1
PRE
DQ
DFN1E1P1
PRE
DQ
DFN1E1P1
PRE
D_Enable
A
B
C
D
EE
E
EF
G
H
I
J
L
K
Y
Core
Array
IGLOOe Low Power Flash FPGAs
Revision 11 2-67
Table 2-121 • Parameter Definition and Measuring Nodes
Parameter Name Parameter Definition
Measuring Nodes
(from, to)*
tOCLKQ Clock-to-Q of the Output Data Register H, DOUT
tOSUD Data Setup Time for the Output Data Register F, H
tOHD Data Hold Time for the Output Data Register F, H
tOSUE Enable Setup Time for the Output Data Register G, H
tOHE Enable Hold Time for the Output Data Register G, H
tOPRE2Q Asynchronous Preset-to-Q of the Output Data Register L, DOUT
tOREMPRE Asynchronous Preset Removal Time for the Output Data Register L, H
tORECPRE Asynchronous Preset Recovery Time for the Output Data Register L, H
tOECLKQ Clock-to-Q of the Output Enable Register H, EOUT
tOESUD Data Setup Time for the Output Enable Register J, H
tOEHD Data Hold Time for the Output Enable Register J, H
tOESUE Enable Setup Time for the Output Enable Register K, H
tOEHE Enable Hold Time for the Output Enable Register K, H
tOEPRE2Q Asynchronous Preset-to-Q of the Output Enable Register I, EOUT
tOEREMPRE Asynchronous Preset Removal Time for the Output Enable Register I, H
tOERECPRE Asynchronous Preset Recovery Time for the Output Enable Register I, H
tICLKQ Clock-to-Q of the Input Data Register A, E
tISUD Data Setup Time for the Input Data Register C, A
tIHD Data Hold Time for the Input Data Register C, A
tISUE Enable Setup Time for the Input Data Register B, A
tIHE Enable Hold Time for the Input Data Register B, A
tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register D, E
tIREMPRE Asynchronous Preset Removal Time for the Input Data Register D, A
tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register D, A
Note: See Figure 2-26 on page 2-66 for more information.
IGLOOe DC and Switching Characteristics
2-68 Revision 11
Fully Registered I/O Buffers with Synchronous Enable and
Asynchronous Clear
Figure 2-27 • Timing Model of the Registered I/O Buffers with Synchronous Enable and Asynchronous Clear
Enable
CLK
Pad Out
CLK
Enable
CLR
Data_out
Data
Y
AA
EOUT
DOUT
Core
Array
DQ
DFN1E1C1
E
CLR
DQ
DFN1E1C1
E
CLR
DQ
DFN1E1C1
E
CLR
D_Enable
BB
CC
DD
EE
FF
GG
LL
HH
JJ
KK
CLKBUF
INBUF
INBUF
TRIBUF
INBUF INBUF CLKBUF
INBUF
Data Input I/O Register with
Active High Enable
Active High Clear
Positive-Edge Triggered Data Output Register and
Enable Output Register with
Active High Enable
Active High Clear
Positive-Edge Triggered
IGLOOe Low Power Flash FPGAs
Revision 11 2-69
Table 2-122 • Parameter Definition and Measuring Nodes
Parameter Name Parameter Definition
Measuring Nodes
(from, to)*
tOCLKQ Clock-to-Q of the Output Data Register HH, DOUT
tOSUD Data Setup Time for the Output Data Register FF, HH
tOHD Data Hold Time for the Output Data Register FF, HH
tOSUE Enable Setup Time for the Output Data Register GG, HH
tOHE Enable Hold Time for the Output Data Register GG, HH
tOCLR2Q Asynchronous Clear-to-Q of the Output Data Register LL, DOUT
tOREMCLR Asynchronous Clear Removal Time for the Output Data Register LL, HH
tORECCLR Asynchronous Clear Recovery Time for the Output Data Register LL, HH
tOECLKQ Clock-to-Q of the Output Enable Register HH, EOUT
tOESUD Data Setup Time for the Output Enable Register JJ, HH
tOEHD Data Hold Time for the Output Enable Register JJ, HH
tOESUE Enable Setup Time for the Output Enable Register KK, HH
tOEHE Enable Hold Time for the Output Enable Register KK, HH
tOECLR2Q Asynchronous Clear-to-Q of the Output Enable Register II, EOUT
tOEREMCLR Asynchronous Clear Removal Time for the Output Enable Register II, HH
tOERECCLR Asynchronous Clear Recovery Time for the Output Enable Register II, HH
tICLKQ Clock-to-Q of the Input Data Register AA, EE
tISUD Data Setup Time for the Input Data Register CC, AA
tIHD Data Hold Time for the Input Data Register CC, AA
tISUE Enable Setup Time for the Input Data Register BB, AA
tIHE Enable Hold Time for the Input Data Register BB, AA
tICLR2Q Asynchronous Clear-to-Q of the Input Data Register DD, EE
tIREMCLR Asynchronous Clear Removal Time for the Input Data Register DD, AA
tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register DD, AA
Note: *See Figure 2-27 on page 2-68 for more information.
IGLOOe DC and Switching Characteristics
2-70 Revision 11
Input Register
Timing Characteristics
1.5 V DC Core Voltage
Figure 2-28 • Input Register Timing Diagram
50%
Preset
Clear
Out_1
CLK
Data
Enable
t
ISUE
50%
50%
t
ISUD
t
IHD
50% 50%
t
ICLKQ
10
t
IHE
t
IRECPRE
t
IREMPRE
t
IRECCLR
t
IREMCLR
t
IWCLR
t
IWPRE
t
IPRE2Q
t
ICLR2Q
t
ICKMPWH
t
ICKMPWL
50% 50%
50% 50% 50%
50% 50%
50% 50% 50% 50% 50% 50%
50%
Table 2-123 • Input Data Register Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V
Parameter Description Std. Units
tICLKQ Clock-to-Q of the Input Data Register 0.42 ns
tISUD Data Setup Time for the Input Data Register 0.47 ns
tIHD Data Hold Time for the Input Data Register 0.00 ns
tISUE Enable Setup Time for the Input Data Register 0.67 ns
tIHE Enable Hold Time for the Input Data Register 0.00 ns
tICLR2Q Asynchronous Clear-to-Q of the Input Data Register 0.79 ns
tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register 0.79 ns
tIREMCLR Asynchronous Clear Removal Time for the Input Data Register 0.00 ns
tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register 0.24 ns
tIREMPRE Asynchronous Preset Removal Time for the Input Data Register 0.00 ns
tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register 0.24 ns
tIWCLR Asynchronous Clear Minimum Pulse Width for the Input Data Register 0.19 ns
tIWPRE Asynchronous Preset Minimum Pulse Width for the Input Data Register 0.19 ns
tICKMPWH Clock Minimum Pulse Width HIGH for the Input Data Register 0.31 ns
tICKMPWL Clock Minimum Pulse Width LOW for the Input Data Register 0.28 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-71
1.2 V DC Core Voltage
Table 2-124 • Input Data Register Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V
Parameter Description Std. Units
tICLKQ Clock-to-Q of the Input Data Register 0.68 ns
tISUD Data Setup Time for the Input Data Register 0.97 ns
tIHD Data Hold Time for the Input Data Register 0.00 ns
tISUE Enable Setup Time for the Input Data Register 1.02 ns
tIHE Enable Hold Time for the Input Data Register 0.00 ns
tICLR2Q Asynchronous Clear-to-Q of the Input Data Register 1.19 ns
tIPRE2Q Asynchronous Preset-to-Q of the Input Data Register 1.19 ns
tIREMCLR Asynchronous Clear Removal Time for the Input Data Register 0.00 ns
tIRECCLR Asynchronous Clear Recovery Time for the Input Data Register 0.24 ns
tIREMPRE Asynchronous Preset Removal Time for the Input Data Register 0.00 ns
tIRECPRE Asynchronous Preset Recovery Time for the Input Data Register 0.24 ns
tIWCLR Asynchronous Clear Minimum Pulse Width for the Input Data Register 0.19 ns
tIWPRE Asynchronous Preset Minimum Pulse Width for the Input Data Register 0.19 ns
tICKMPWH Clock Minimum Pulse Width HIGH for the Input Data Register 0.31 ns
tICKMPWL Clock Minimum Pulse Width LOW for the Input Data Register 0.28 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-72 Revision 11
Output Register
Timing Characteristics
1.5 V DC Core Voltage
Figure 2-29 • Output Register Timing Diagram
Preset
Clear
DOUT
CLK
Data_out
Enable
t
OSUE
50%
50%
t
OSUD
t
OHD
50% 50%
t
OCLKQ
10
t
OHE
t
ORECPRE
t
OREMPRE
t
ORECCLR
t
OREMCLR
t
OWCLR
t
OWPRE
t
OPRE2Q
t
OCLR2Q
t
OCKMPWH
t
OCKMPWL
50% 50%
50% 50% 50%
50% 50%
50% 50% 50% 50% 50% 50%
50%
50%
Table 2-125 • Output Data Register Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V
Parameter Description Std. Units
tOCLKQ Clock-to-Q of the Output Data Register 1.00 ns
tOSUD Data Setup Time for the Output Data Register 0.51 ns
tOHD Data Hold Time for the Output Data Register 0.00 ns
tOSUE Enable Setup Time for the Output Data Register 0.70 ns
tOHE Enable Hold Time for the Output Data Register 0.00 ns
tOCLR2Q Asynchronous Clear-to-Q of the Output Data Register 1.34 ns
tOPRE2Q Asynchronous Preset-to-Q of the Output Data Register 1.34 ns
tOREMCLR Asynchronous Clear Removal Time for the Output Data Register 0.00 ns
tORECCLR Asynchronous Clear Recovery Time for the Output Data Register 0.24 ns
tOREMPRE Asynchronous Preset Removal Time for the Output Data Register 0.00 ns
tORECPRE Asynchronous Preset Recovery Time for the Output Data Register 0.24 ns
tOWCLR Asynchronous Clear Minimum Pulse Width for the Output Data Register 0.19 ns
tOWPRE Asynchronous Preset Minimum Pulse Width for the Output Data Register 0.19 ns
tOCKMPWH Clock Minimum Pulse Width HIGH for the Output Data Register 0.31 ns
tOCKMPWL Clock Minimum Pulse Width LOW for the Output Data Register 0.28 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-73
1.2 V DC Core Voltage
Table 2-126 • Output Data Register Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V
Parameter Description Std. Units
tOCLKQ Clock-to-Q of the Output Data Register 1.52 ns
tOSUD Data Setup Time for the Output Data Register 1.15 ns
tOHD Data Hold Time for the Output Data Register 0.00 ns
tOSUE Enable Setup Time for the Output Data Register 1.11 ns
tOHE Enable Hold Time for the Output Data Register 0.00 ns
tOCLR2Q Asynchronous Clear-to-Q of the Output Data Register 1.96 ns
tOPRE2Q Asynchronous Preset-to-Q of the Output Data Register 1.96 ns
tOREMCLR Asynchronous Clear Removal Time for the Output Data Register 0.00 ns
tORECCLR Asynchronous Clear Recovery Time for the Output Data Register 0.24 ns
tOREMPRE Asynchronous Preset Removal Time for the Output Data Register 0.00 ns
tORECPRE Asynchronous Preset Recovery Time for the Output Data Register 0.24 ns
tOWCLR Asynchronous Clear Minimum Pulse Width for the Output Data Register 0.19 ns
tOWPRE Asynchronous Preset Minimum Pulse Width for the Output Data Register 0.19 ns
tOCKMPWH Clock Minimum Pulse Width HIGH for the Output Data Register 0.31 ns
tOCKMPWL Clock Minimum Pulse Width LOW for the Output Data Register 0.28 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-74 Revision 11
Output Enable Register
Timing Characteristics
1.5 V DC Core Voltage
Figure 2-30 • Output Enable Register Timing Diagram
50%
Preset
Clear
EOUT
CLK
D_Enable
Enable
t
OESUE
50%
50%
t
OESUD
t
OEHD
50% 50%
t
OECLKQ
10
t
OEHE
t
OERECPRE
t
OEREMPRE
t
OERECCLR
t
OEREMCLR
t
OEWCLR
t
OEWPRE
t
OEPRE2Q
t
OECLR2Q
t
OECKMPWH
t
OECKMPWL
50% 50%
50% 50% 50%
50% 50%
50% 50% 50% 50% 50% 50%
50%
Table 2-127 • Output Enable Register Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V
Parameter Description Std. Units
tOECLKQ Clock-to-Q of the Output Enable Register 0.75 ns
tOESUD Data Setup Time for the Output Enable Register 0.51 ns
tOEHD Data Hold Time for the Output Enable Register 0.00 ns
tOESUE Enable Setup Time for the Output Enable Register 0.73 ns
tOEHE Enable Hold Time for the Output Enable Register 0.00 ns
tOECLR2Q Asynchronous Clear-to-Q of the Output Enable Register 1.13 ns
tOEPRE2Q Asynchronous Preset-to-Q of the Output Enable Register 1.13 ns
tOEREMCLR Asynchronous Clear Removal Time for the Output Enable Register 0.00 ns
tOERECCLR Asynchronous Clear Recovery Time for the Output Enable Register 0.24 ns
tOEREMPRE Asynchronous Preset Removal Time for the Output Enable Register 0.00 ns
tOERECPRE Asynchronous Preset Recovery Time for the Output Enable Register 0.24 ns
tOEWCLR Asynchronous Clear Minimum Pulse Width for the Output Enable Register 0.19 ns
tOEWPRE Asynchronous Preset Minimum Pulse Width for the Output Enable Register 0.19 ns
tOECKMPWH Clock Minimum Pulse Width HIGH for the Output Enable Register 0.31 ns
tOECKMPWL Clock Minimum Pulse Width LOW for the Output Enable Register 0.28 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-75
1.2 V DC Core Voltage
Table 2-128 • Output Enable Register Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V
Parameter Description Std. Units
tOECLKQ Clock-to-Q of the Output Enable Register 1.10 ns
tOESUD Data Setup Time for the Output Enable Register 1.15 ns
tOEHD Data Hold Time for the Output Enable Register 0.00 ns
tOESUE Enable Setup Time for the Output Enable Register 1.22 ns
tOEHE Enable Hold Time for the Output Enable Register 0.00 ns
tOECLR2Q Asynchronous Clear-to-Q of the Output Enable Register 1.65 ns
tOEPRE2Q Asynchronous Preset-to-Q of the Output Enable Register 1.65 ns
tOEREMCLR Asynchronous Clear Removal Time for the Output Enable Register 0.00 ns
tOERECCLR Asynchronous Clear Recovery Time for the Output Enable Register 0.24 ns
tOEREMPRE Asynchronous Preset Removal Time for the Output Enable Register 0.00 ns
tOERECPRE Asynchronous Preset Recovery Time for the Output Enable Register 0.24 ns
tOEWCLR Asynchronous Clear Minimum Pulse Width for the Output Enable Register 0.19 ns
tOEWPRE Asynchronous Preset Minimum Pulse Width for the Output Enable Register 0.19 ns
tOECKMPWH Clock Minimum Pulse Width HIGH for the Output Enable Register 0.31 ns
tOECKMPWL Clock Minimum Pulse Width LOW for the Output Enable Register 0.28 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-76 Revision 11
DDR Module Specifications
Input DDR Module
Figure 2-31 • Input DDR Timing Model
Table 2-129 • Parameter Definitions
Parameter Name Parameter Definition Measuring Nodes (from, to)
tDDRICLKQ1 Clock-to-Out Out_QR B, D
tDDRICLKQ2 Clock-to-Out Out_QF B, E
tDDRISUD Data Setup Time of DDR input A, B
tDDRIHD Data Hold Time of DDR input A, B
tDDRICLR2Q1 Clear-to-Out Out_QR C, D
tDDRICLR2Q2 Clear-to-Out Out_QF C, E
tDDRIREMCLR Clear Removal C, B
tDDRIRECCLR Clear Recovery C, B
Input DDR
Data
CLK
CLKBUF
INBUF
Out_QF
(to core)
FF2
FF1
INBUF
CLR
DDR_IN
E
A
B
C
D
Out_QR
(to core)
IGLOOe Low Power Flash FPGAs
Revision 11 2-77
Timing Characteristics
1.5 V DC Core Voltage
Figure 2-32 • Input DDR Timing Diagram
t
DDRICLR2Q2
t
DDRIREMCLR
t
DDRIRECCLR
t
DDRICLR2Q1
12 3 4 5 6 7 8 9
CLK
Data
CLR
Out_QR
Out_QF
t
DDRICLKQ1
246
357
t
DDRIHD
t
DDRISUD
t
DDRICLKQ2
Table 2-130 • Input DDR Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V
Parameter Description Std. Units
tDDRICLKQ1 Clock-to-Out Out_QR for Input DDR 0.48 ns
tDDRICLKQ2 Clock-to-Out Out_QF for Input DDR 0.65 ns
tDDRISUD1 Data Setup for Input DDR (negedge) 0.50 ns
tDDRISUD2 Data Setup for Input DDR (posedge) 0.40 ns
tDDRIHD1 Data Hold for Input DDR (negedge) 0.00 ns
tDDRIHD2 Data Hold for Input DDR (posedge) 0.00 ns
tDDRICLR2Q1 Asynchronous Clear to Out Out_QR for Input DDR 0.82 ns
tDDRICLR2Q2 Asynchronous Clear-to-Out Out_QF for Input DDR 0.98 ns
tDDRIREMCLR Asynchronous Clear Removal Time for Input DDR 0.00 ns
tDDRIRECCLR Asynchronous Clear Recovery Time for Input DDR 0.23 ns
tDDRIWCLR Asynchronous Clear Minimum Pulse Width for Input DDR 0.19 ns
tDDRICKMPWH Clock Minimum Pulse Width HIGH for Input DDR 0.31 ns
tDDRICKMPWL Clock Minimum Pulse Width LOW for Input DDR 0.28 ns
FDDRIMAX Maximum Frequency for Input DDR 250.00 MHz
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-78 Revision 11
1.2 V DC Core Voltage
Table 2-131 • Input DDR Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V
Parameter Description Std. Units
tDDRICLKQ1 Clock-to-Out Out_QR for Input DDR 0.76 ns
tDDRICLKQ2 Clock-to-Out Out_QF for Input DDR 0.94 ns
tDDRISUD1 Data Setup for Input DDR (negedge) 0.93 ns
tDDRISUD2 Data Setup for Input DDR (posedge) 0.84 ns
tDDRIHD1 Data Hold for Input DDR (negedge) 0.00 ns
tDDRIHD2 Data Hold for Input DDR (posedge) 0.00 ns
tDDRICLR2Q1 Asynchronous Clear to Out Out_QR for Input DDR 1.23 ns
tDDRICLR2Q2 Asynchronous Clear-to-Out Out_QF for Input DDR 1.42 ns
tDDRIREMCLR Asynchronous Clear Removal Time for Input DDR 0.00 ns
tDDRIRECCLR Asynchronous Clear Recovery Time for Input DDR 0.24 ns
tDDRIWCLR Asynchronous Clear Minimum Pulse Width for Input DDR 0.19 ns
tDDRICKMPWH Clock Minimum Pulse Width HIGH for Input DDR 0.31 ns
tDDRICKMPWL Clock Minimum Pulse Width LOW for Input DDR 0.28 ns
FDDRIMAX Maximum Frequency for Input DDR 160.00 MHz
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-79
Output DDR Module
Figure 2-33 • Output DDR Timing Model
Table 2-132 • Parameter Definitions
Parameter Name Parameter Definition Measuring Nodes (from, to)
tDDROCLKQ Clock-to-Out B, E
tDDROCLR2Q Asynchronous Clear-to-Out C, E
tDDROREMCLR Clear Removal C, B
tDDRORECCLR Clear Recovery C, B
tDDROSUD1 Data Setup Data_F A, B
tDDROSUD2 Data Setup Data_R D, B
tDDROHD1 Data Hold Data_F A, B
tDDROHD2 Data Hold Data_R D, B
Data_F
(from core)
CLK
CLKBUF
Out
FF2
INBUF
CLR
DDR_OUT
Output DDR
FF1
0
1
X
X
X
X
X
X
X
A
B
D
E
C
C
B
OUTBUF
Data_R
(from core)
IGLOOe DC and Switching Characteristics
2-80 Revision 11
Figure 2-34 • Output DDR Timing Diagram
116
1
7
2
8
3
910
45
28 3 9
t
DDROREMCLR
t
DDROHD1
t
DDROREMCLR
t
DDROHD2
t
DDROSUD2
t
DDROCLKQ
t
DDRORECCLR
CLK
Data_R
Data_F
CLR
Out
t
DDROCLR2Q
7104
IGLOOe Low Power Flash FPGAs
Revision 11 2-81
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-133 • Output DDR Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V
Parameter Description Std. Units
tDDROCLKQ Clock-to-Out of DDR for Output DDR 1.07 ns
tDDROSUD1 Data_F Data Setup for Output DDR 0.67 ns
tDDROSUD2 Data_R Data Setup for Output DDR 0.67 ns
tDDROHD1 Data_F Data Hold for Output DDR 0.00 ns
tDDROHD2 Data_R Data Hold for Output DDR 0.00 ns
tDDROCLR2Q Asynchronous Clear-to-Out for Output DDR 1.38 ns
tDDROREMCLR Asynchronous Clear Removal Time for Output DDR 0.00 ns
tDDRORECCLR Asynchronous Clear Recovery Time for Output DDR 0.23 ns
tDDROWCLR1 Asynchronous Clear Minimum Pulse Width for Output DDR 0.19 ns
tDDROCKMPWH Clock Minimum Pulse Width HIGH for the Output DDR 0.31 ns
tDDROCKMPWL Clock Minimum Pulse Width LOW for the Output DDR 0.28 ns
FDDOMAX Maximum Frequency for the Output DDR 250.00 MHz
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-134 • Output DDR Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V
Parameter Description Std. Units
tDDROCLKQ Clock-to-Out of DDR for Output DDR 1.60 ns
tDDROSUD1 Data_F Data Setup for Output DDR 1.09 ns
tDDROSUD2 Data_R Data Setup for Output DDR 1.16 ns
tDDROHD1 Data_F Data Hold for Output DDR 0.00 ns
tDDROHD2 Data_R Data Hold for Output DDR 0.00 ns
tDDROCLR2Q Asynchronous Clear-to-Out for Output DDR 1.99 ns
tDDROREMCLR Asynchronous Clear Removal Time for Output DDR 0.00 ns
tDDRORECCLR Asynchronous Clear Recovery Time for Output DDR 0.24 ns
tDDROWCLR1 Asynchronous Clear Minimum Pulse Width for Output DDR 0.19 ns
tDDROCKMPWH Clock Minimum Pulse Width HIGH for the Output DDR 0.31 ns
tDDROCKMPWL Clock Minimum Pulse Width LOW for the Output DDR 0.28 ns
FDDOMAX Maximum Frequency for the Output DDR 160.00 MHz
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-82 Revision 11
VersaTile Characteristics
VersaTile Specifications as a Combinatorial Module
The IGLOOe library offers all combinations of LUT-3 combinatorial functions. In this section, timing
characteristics are presented for a sample of the library. For more details, refer to the IGLOO, Fusion,
and ProASIC3 Macro Library Guide.
Figure 2-35 • Sample of Combinatorial Cells
MAJ3
A
C
BY
MUX2
B
0
1
A
S
Y
AY
B
B
A
XOR2 Y
NOR2
B
A
Y
B
A
YOR2
INV
A
Y
AND2
B
A
Y
NAND3
B
A
C
XOR3 Y
B
A
C
NAND2
IGLOOe Low Power Flash FPGAs
Revision 11 2-83
Figure 2-36 • Timing Model and Waveforms
Net A
Y
B
Length = 1 VersaTile
Net A
Y
B
Length = 1 VersaTile
Net A
Y
B
Length = 1 VersaTile
Net A
Y
B
Length = 1 VersaTile
NAND2 or Any
Combinatorial
Logic
NAND2 or Any
Combinatorial
Logic
NAND2 or Any
Combinatorial
Logic
NAND2 or Any
Combinatorial
Logic
tPD = MAX(tPD(RR), tPD(RF),
tPD(FF), tPD(FR)) where edges are
applicable for a particular
combinatorial cell
Fanout = 4
tPD
t
PD
tPD
50%
VCC
VCC
VCC
50%
GND
A, B, C
50% 50%
50%
(RR)
(RF) GND
OUT
OUT
GND
50%
(FF)
(FR)
tPD
tPD
IGLOOe DC and Switching Characteristics
2-84 Revision 11
Timing Characteristics
1.5 V DC Core Voltage
1.2 V DC Core Voltage
Table 2-135 • Combinatorial Cell Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V
Combinatorial Cell Equation Parameter Std. Units
INV Y = !A tPD 0.80 ns
AND2 Y = A · B tPD 0.84 ns
NAND2 Y = !(A · B) tPD 0.90 ns
OR2 Y = A + B tPD 1.19 ns
NOR2 Y = !(A + B) tPD 1.10 ns
XOR2 Y = A Bt
PD 1.37 ns
MAJ3 Y = MAJ(A, B, C) tPD 1.33 ns
XOR3 Y = A B Ct
PD 1.79 ns
MUX2 Y = A !S + B S tPD 1.48 ns
AND3 Y = A · B · C tPD 1.21 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-136 • Combinatorial Cell Propagation Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V
Combinatorial Cell Equation Parameter Std. Units
INV Y = !A tPD 1.35 ns
AND2 Y = A · B tPD 1.42 ns
NAND2 Y = !(A · B) tPD 1.58 ns
OR2 Y = A + B tPD 2.10 ns
NOR2 Y = !(A + B) tPD 1.94 ns
XOR2 Y = A Bt
PD 2.33 ns
MAJ3 Y = MAJ(A, B, C) tPD 2.34 ns
XOR3 Y = A B Ct
PD 3.05 ns
MUX2 Y = A !S + B S tPD 2.64 ns
AND3 Y = A · B · C tPD 2.10 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-85
VersaTile Specifications as a Sequential Module
The IGLOOe library offers a wide variety of sequential cells, including flip-flops and latches. Each has a
data input and optional enable, clear, or preset. In this section, timing characteristics are presented for a
representative sample from the library. For more details, refer to the IGLOO, Fusion, and ProASIC3
Macro Library Guide.
Figure 2-37 • Sample of Sequential Cells
DQ
DFN1
Data
CLK
Out
DQ
DFN1C1
Data
CLK
Out
CLR
DQ
DFI1E1P1
Data
CLK
Out
En
PRE
DQ
DFN1E1
Data
CLK
Out
En
IGLOOe DC and Switching Characteristics
2-86 Revision 11
Timing Characteristics
1.5 V DC Core Voltage
Figure 2-38 • Timing Model and Waveforms
PRE
CLR
Out
CLK
Data
EN
t
SUE
50%
50%
t
SUD
t
HD
50% 50%
t
CLKQ
0
t
HE
t
RECPRE
t
REMPRE
t
RECCLR
t
REMCLR
t
WCLR
t
WPRE
t
PRE2Q
t
CLR2Q
t
CKMPWH
t
CKMPWL
50% 50%
50% 50% 50%
50% 50%
50% 50% 50% 50% 50% 50%
50%
50%
Table 2-137 • Register Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V
Parameter Description Std. Units
tCLKQ Clock-to-Q of the Core Register 0.89 ns
tSUD Data Setup Time for the Core Register 0.81 ns
tHD Data Hold Time for the Core Register 0.00 ns
tSUE Enable Setup Time for the Core Register 0.73 ns
tHE Enable Hold Time for the Core Register 0.00 ns
tCLR2Q Asynchronous Clear-to-Q of the Core Register 0.60 ns
tPRE2Q Asynchronous Preset-to-Q of the Core Register 0.62 ns
tREMCLR Asynchronous Clear Removal Time for the Core Register 0.00 ns
tRECCLR Asynchronous Clear Recovery Time for the Core Register 0.24 ns
tREMPRE Asynchronous Preset Removal Time for the Core Register 0.00 ns
tRECPRE Asynchronous Preset Recovery Time for the Core Register 0.23 ns
tWCLR Asynchronous Clear Minimum Pulse Width for the Core Register 0.30 ns
tWPRE Asynchronous Preset Minimum Pulse Width for the Core Register 0.30 ns
tCKMPWH Clock Minimum Pulse Width HIGH for the Core Register 0.56 ns
tCKMPWL Clock Minimum Pulse Width LOW for the Core Register 0.56 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-87
1.2 V DC Core Voltage
Table 2-138 • Register Delays
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V
Parameter Description Std. Units
tCLKQ Clock-to-Q of the Core Register 1.61 ns
tSUD Data Setup Time for the Core Register 1.17 ns
tHD Data Hold Time for the Core Register 0.00 ns
tSUE Enable Setup Time for the Core Register 1.29 ns
tHE Enable Hold Time for the Core Register 0.00 ns
tCLR2Q Asynchronous Clear-to-Q of the Core Register 0.87 ns
tPRE2Q Asynchronous Preset-to-Q of the Core Register 0.89 ns
tREMCLR Asynchronous Clear Removal Time for the Core Register 0.00 ns
tRECCLR Asynchronous Clear Recovery Time for the Core Register 0.24 ns
tREMPRE Asynchronous Preset Removal Time for the Core Register 0.00 ns
tRECPRE Asynchronous Preset Recovery Time for the Core Register 0.24 ns
tWCLR Asynchronous Clear Minimum Pulse Width for the Core Register 0.46 ns
tWPRE Asynchronous Preset Minimum Pulse Width for the Core Register 0.46 ns
tCKMPWH Clock Minimum Pulse Width HIGH for the Core Register 0.95 ns
tCKMPWL Clock Minimum Pulse Width LOW for the Core Register 0.95 ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-88 Revision 11
Global Resource Characteristics
AGLE600 Clock Tree Topology
Clock delays are device-specific. Figure 2-39 is an example of a global tree used for clock routing. The
global tree presented in Figure 2-39 is driven by a CCC located on the west side of the AGLE600 device.
It is used to drive all D-flip-flops in the device.
Figure 2-39 • Example of Global Tree Use in an AGLE600 Device for Clock Routing
Central
Global Rib
VersaTile
Rows
Global Spine
CCC
IGLOOe Low Power Flash FPGAs
Revision 11 2-89
Global Tree Timing Characteristics
Global clock delays include the central rib delay, the spine delay, and the row delay. Delays do not
include I/O input buffer clock delays, as these are I/O standard–dependent, and the clock may be driven
and conditioned internally by the CCC module. For more details on clock conditioning capabilities, refer
to the "Clock Conditioning Circuits" section on page 2-91. Table 2-139 and Table 2-141 present minimum
and maximum global clock delays within the device. Minimum and maximum delays are measured with
minimum and maximum loading.
Timing Characteristics
1.5 V DC Core Voltage
Table 2-139 • AGLE600 Global Resource
Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V
Parameter Description
Std.
UnitsMin.1Max.2
tRCKL Input Low Delay for Global Clock 1.48 1.82 ns
tRCKH Input High Delay for Global Clock 1.52 1.94 ns
tRCKMPWH Minimum Pulse Width High for Global Clock 1.18 ns
tRCKMPWL Minimum Pulse Width Low for Global Clock 1.15 ns
tRCKSW Maximum Skew for Global Clock 0.42 ns
Notes:
1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element,
located in a lightly loaded row (single element is connected to the global net).
2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully
loaded row (all available flip-flops are connected to the global net in the row).
3. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Table 2-140 • AGLE3000 Global Resource
Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V
Parameter Description
Std.
UnitsMin.1Max.2
tRCKL Input Low Delay for Global Clock 2.00 2.34 ns
tRCKH Input High Delay for Global Clock 2.09 2.51 ns
tRCKMPWH Minimum Pulse Width High for Global Clock 1.18 ns
tRCKMPWL Minimum Pulse Width Low for Global Clock 1.15 ns
tRCKSW Maximum Skew for Global Clock 0.42 ns
Notes:
1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element,
located in a lightly loaded row (single element is connected to the global net).
2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully
loaded row (all available flip-flops are connected to the global net in the row).
3. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-90 Revision 11
1.2 V DC Core Voltage
Table 2-141 • AGLE600 Global Resource
Commercial-Case Conditions: TJ = 70°C, VCC = 1.14 V
Parameter Description
Std.
UnitsMin.1Max.2
tRCKL Input Low Delay for Global Clock 2.22 2.67 ns
tRCKH Input High Delay for Global Clock 2.32 2.93 ns
tRCKMPWH Minimum Pulse Width HIGH for Global Clock 1.40 ns
tRCKMPWL Minimum Pulse Width LOW for Global Clock 1.65 ns
tRCKSW Maximum Skew for Global Clock 0.61 ns
Notes:
1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element,
located in a lightly loaded row (single element is connected to the global net).
2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully
loaded row (all available flip-flops are connected to the global net in the row).
3. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
Table 2-142 • AGLE3000 Global Resource
Commercial-Case Conditions: TJ = 70°C, VCC = 1.14 V
Parameter Description
Std.
UnitsMin.1Max.2
tRCKL Input Low Delay for Global Clock 2.83 3.27 ns
tRCKH Input High Delay for Global Clock 3.00 3.61 ns
tRCKMPWH Minimum Pulse Width HIGH for Global Clock 1.40 ns
tRCKMPWL Minimum Pulse Width LOW for Global Clock 1.65 ns
tRCKSW Maximum Skew for Global Clock 0.61 ns
Notes:
1. Value reflects minimum load. The delay is measured from the CCC output to the clock pin of a sequential element,
located in a lightly loaded row (single element is connected to the global net).
2. Value reflects maximum load. The delay is measured on the clock pin of the farthest sequential element, located in a fully
loaded row (all available flip-flops are connected to the global net in the row).
3. For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-91
Clock Conditioning Circuits
CCC Electrical Specifications
Timing Characteristics
Table 2-143 • IGLOOe CCC/PLL Specification
For IGLOOe V2 or V5 Devices, 1.5 V DC Core Supply Voltage
Parameter Min. Typ. Max. Units
Clock Conditioning Circuitry Input Frequency fIN_CCC 1.5 250 MHz
Clock Conditioning Circuitry Output Frequency fOUT_CCC 0.75 250 MHz
Serial Clock (SCLK) for Dynamic PLL1100 MHz
Delay Increments in Programmable Delay Blocks 2, 3 3604 ps
Number of Programmable Values in Each Programmable Delay
Block
32 ns
Input Cycle-to-Cycle Jitter (peak magnitude) 1
CCC Output Peak-to-Peak Period Jitter FCCC_OUT Max Peak-to-Peak Period Jitter
1 Global
Network
Used
External
FB Used
3 Global
Networks
Used
0.75 MHz to 24 MHz 0.50% 0.75% 0.70%
24 MHz to 100 MHz 1.00% 1.50% 1.20%
100 MHz to 250 MHz 2.50% 3.75% 2.75%
Acquisition Time
LockControl = 0 300 µs
LockControl = 1 6.0 ms
Tracking Jitter
LockControl = 0 2.5 ns
LockControl = 1 1.5 ns
Output Duty Cycle 48.5 51.5 %
Delay Range in Block: Programmable Delay 1 2, 3, 5 1.25 15.65 ns
Delay Range in Block: Programmable Delay 2 2, 3, 5 0.469 15.65 ns
Delay Range in Block: Fixed Delay 2, 3 3.5 ns
Notes:
1. Maximum value obtained for a Std. speed grade device in Worst Case Commercial Conditions. For specific junction
temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
2. This delay is a function of voltage and temperature. See Table 2-6 on page 2-6 and Table 2-7 on page 2-6 for deratings.
3. TJ = 25°C, VCC = 1.5 V
4. When the CCC/PLL core is generated by Microsemi core generator software, not all delay values of the specified delay
increments are available. Refer to SmartGen online help for more information.
5. For definitions of Type 1 and Type 2, refer to the PLL Block Diagram in the "Clock Conditioning Circuits in IGLOO and
ProASIC3 Devices" chapter of the IGLOOe FPGA Fabric User’s Guide.
6. Tracking jitter is defined as the variation in clock edge position of PLL outputs with reference to the PLL input clock
edge. Tracking jitter does not measure the variation in PLL output period, which is covered by the period jitter
parameter.
IGLOOe DC and Switching Characteristics
2-92 Revision 11
Table 2-144 • IGLOOe CCC/PLL Specification
For IGLOOe V2 Devices, 1.2 V DC Core Supply Voltage
Parameter Min. Typ. Max. Units
Clock Conditioning Circuitry Input Frequency fIN_CCC 1.5 160 MHz
Clock Conditioning Circuitry Output Frequency fOUT_CCC 0.75 160 MHz
Serial Clock (SCLK) for Dynamic PLL160 MHz
Delay Increments in Programmable Delay Blocks2, 3 5804 ps
Number of Programmable Values in Each Programmable Delay
Block
32
Input Cycle-to-Cycle Jitter (peak magnitude) 0.25 ns
CCC Output Peak-to-Peak Period Jitter FCCC_OUT Max Peak-to-Peak Period Jitter
1 Global
Network
Used
External
FB Used
3 Global
Networks
Used
0.75 MHz to 24 MHz 0.50% 0.75% 0.70%
24 MHz to 100 MHz 1.00% 1.50% 1.20%
100 MHz to 160 MHz 2.50% 3.75% 2.75%
Acquisition Time
LockControl = 0 300 µs
LockControl = 1 6.0 ms
Tracking Jitter5
LockControl = 0 4 ns
LockControl = 1 3 ns
Output Duty Cycle 48.5 51.5 %
Delay Range in Block: Programmable Delay 12, 3 2.3 20.86 ns
Delay Range in Block: Programmable Delay 2 2, 3 0.863 20.86 ns
Delay Range in Block: Fixed Delay 2, 3 5.7 ns
Notes:
1. Maximum value obtained for a Std. speed grade device in Worst Case Commercial Conditions. For specific junction
temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
2. This delay is a function of voltage and temperature. See Table 2-6 on page 2-6 and Table 2-7 on page 2-6 for deratings.
3. TJ = 25°C, VCC = 1.5 V
4. When the CCC/PLL core is generated by Microsemi core generator software, not all delay values of the specified delay
increments are available. Refer to SmartGen online help for more information.
5. Tracking jitter is defined as the variation in clock edge position of PLL outputs with reference to PLL input clock edge.
Tracking jitter does not measure the variation in PLL output period, which is covered by period jitter parameter.
Note: Peak-to-peak jitter measurements are defined by Tpeak-to-peak = Tperiod_max – Tperiod_min.
Figure 2-40 • Peak-to-Peak Jitter Definition
T
period_max
T
period_min
Output Signal
IGLOOe Low Power Flash FPGAs
Revision 11 2-93
Embedded SRAM and FIFO Characteristics
SRAM
Figure 2-41 • RAM Models
ADDRA11 DOUTA8
DOUTA7
DOUTA0
DOUTB8
DOUTB7
DOUTB0
ADDRA10
ADDRA0
DINA8
DINA7
DINA0
WIDTHA1
WIDTHA0
PIPEA
WMODEA
BLKA
WENA
CLKA
ADDRB11
ADDRB10
ADDRB0
DINB8
DINB7
DINB0
WIDTHB1
WIDTHB0
PIPEB
WMODEB
BLKB
WENB
CLKB
RAM4K9
RADDR8 RD17
RADDR7 RD16
RADDR0 RD0
WD17
WD16
WD0
WW1
WW0
RW1
RW0
PIPE
REN
RCLK
RAM512X18
WADDR8
WADDR7
WADDR0
WEN
WCLK
RESET
RESET
IGLOOe DC and Switching Characteristics
2-94 Revision 11
Timing Waveforms
Figure 2-42 • RAM Read for Pass-Through Output. Applicable to Both RAM4K9 and RAM512X18.
Figure 2-43 • RAM Read for Pipelined Output. Applicable to Both RAM4K9 and RAM512X18.
CLK
[R|W]ADDR
BLK
WEN
DOUT|RD
A0A1A2
D0D1D2
tCYC
tCKH tCKL
tAS tAH
tBKS
tENS tENH
tDOH1
tBKH
Dn
tCKQ1
CLK
[R|W]ADDR
BLK
WEN
DOUT|RD
A0A1A2
D0D1
tCYC
tCKH tCKL
tAS tAH
tBKS
tENS tENH
tDOH2
tCKQ2
tBKH
Dn
IGLOOe Low Power Flash FPGAs
Revision 11 2-95
Figure 2-44 • RAM Write, Output Retained. Applicable to both RAM4K9 and RAM512X18.
Figure 2-45 • RAM Write, Output as Write Data (WMODE = 1). Applicable to RAM4K9 Only.
tCYC
tCKH tCKL
A0A1A2
DI0DI1
tAS tAH
tBKS
tENS tENH
tDS tDH
CLK
BLK
WEN
[R|W]ADDR
DIN|WD
Dn
DOUT|RD
tBKH
D2
tCYC
tCKH tCKL
A0A1A2
DI0DI1
tAS tAH
tBKS
tENS
tDS tDH
CLK
BLK
WEN
ADDR
DIN
tBKH
DOUT
(pass-through) DI1
DnDI0
DOUT
(pipelined) DI0DI1
Dn
DI2
IGLOOe DC and Switching Characteristics
2-96 Revision 11
Figure 2-46 • RAM Reset
CLK
RESET
DOUT|RD D
n
t
CYC
t
CKH
t
CKL
t
RSTBQ
D
m
IGLOOe Low Power Flash FPGAs
Revision 11 2-97
Timing Characteristics
Applies to 1.5 V DC Core Voltage
Table 2-145 • RAM4K9
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V
Parameter Description Std. Units
tAS Address Setup Time 0.83 ns
tAH Address Hold Time 0.16 ns
tENS REN, WEN Setup Time 0.81 ns
tENH REN, WEN Hold Time 0.16 ns
tBKS BLK Setup Time 1.65 ns
tBKH BLK Hold Time 0.16 ns
tDS Input Data (DIN) Setup Time 0.71 ns
tDH Input Data (DIN) Hold Time 0.36 ns
tCKQ1 Clock HIGH to New Data Valid on DOUT (output retained, WMODE = 0) 3.53 ns
Clock HIGH to New Data Valid on DOUT (flow-through, WMODE = 1) 3.06 ns
tCKQ2 Clock HIGH to New Data Valid on DOUT (pipelined) 1.81 ns
tC2CWWL1Address collision clk-to-clk delay for reliable write after write on same
address; applicable to closing edge
0.23 ns
tC2CRWH1Address collision clk-to-clk delay for reliable read access after write on
same address; applicable to opening edge
0.35 ns
tC2CWRH1Address collision clk-to-clk delay for reliable write access after read on
same address; applicable to opening edge
0.41 ns
tRSTBQ RESET Low to Data Out Low on DOUT (flow-through) 2.06 ns
RESET Low to Data Out Low on DOUT (pipelined) 2.06 ns
tREMRSTB RESET Removal 0.61 ns
tRECRSTB RESET Recovery 3.21 ns
tMPWRSTB RESET Minimum Pulse Width 0.68 ns
tCYC Clock Cycle Time 6.24 ns
FMAX Maximum Frequency 160 MHz
Notes:
1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-
Based cSoCs and FPGAs.
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-98 Revision 11
Table 2-146 • RAM512X18
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.425 V
Parameter Description Std. Units
tAS Address Setup Time 0.83 ns
tAH Address Hold Time 0.16 ns
tENS REN, WEN Setup Time 0.73 ns
tENH REN, WEN Hold Time 0.08 ns
tDS Input Data (WD) Setup Time 0.71 ns
tDH Input Data (WD) Hold Time 0.36 ns
tCKQ1 Clock HIGH to New Data Valid on RD (output retained, WMODE = 0) 4.21 ns
tCKQ2 Clock HIGH to New Data Valid on RD (pipelined) 1.71 ns
tC2CRWH1Address collision clk-to-clk delay for reliable read access after write on
same address; applicable to opening edge
0.35 ns
tC2CWRH1Address collision clk-to-clk delay for reliable write access after read on
same address; applicable to opening edge
0.42 ns
tRSTBQ RESET Low to Data Out Low on RD (flow-through) 2.06 ns
RESET Low to Data Out Low on RD (pipelined) 2.06 ns
tREMRSTB RESET Removal 0.61 ns
tRECRSTB RESET Recovery 3.21 ns
tMPWRSTB RESET Minimum Pulse Width 0.68 ns
tCYC Clock Cycle Time 6.24 ns
FMAX Maximum Frequency 160 MHz
Notes:
1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-
Based cSoCs and FPGAs.
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-99
Applies to 1.2 V DC Core Voltage
Table 2-147 • RAM4K9
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V
Parameter Description Std. Units
tAS Address Setup Time 1.53 ns
tAH Address Hold Time 0.29 ns
tENS REN, WEN Setup Time 1.50 ns
tENH REN, WEN Hold Time 0.29 ns
tBKS BLK Setup Time 3.05 ns
tBKH BLK Hold Time 0.29 ns
tDS Input Data (DIN) Setup Time 1.33 ns
tDH Input Data (DIN) Hold Time 0.66 ns
tCKQ1 Clock High to New Data Valid on DOUT (output retained, WMODE = 0) 6.61 ns
Clock High to New Data Valid on DOUT (flow-through, WMODE = 1) 5.72 ns
tCKQ2 Clock High to New Data Valid on DOUT (pipelined) 3.38 ns
tC2CWWL1Address collision clk-to-clk delay for reliable write after write on same
address; applicable to closing edge
0.30 ns
tC2CRWH1Address collision clk-to-clk delay for reliable read access after write on
same address; applicable to opening edge
0.89 ns
tC2CWRH1Address collision clk-to-clk delay for reliable write access after read on
same address; applicable to opening edge
1.01 ns
tRSTBQ RESET Low to Data Out Low on DOUT (pass-through) 3.86 ns
RESET Low to Data Out Low on DOUT (pipelined) 3.86 ns
tREMRSTB RESET Removal 1.12 ns
tRECRSTB RESET Recovery 5.93 ns
tMPWRSTB RESET Minimum Pulse Width 1.18 ns
tCYC Clock Cycle Time 10.90 ns
FMAX Maximum Frequency 92 MHz
Notes:
1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-
Based cSoCs and FPGAs.
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-100 Revision 11
Table 2-148 • RAM512X18
Commercial-Case Conditions: TJ = 70°C, Worst-Case VCC = 1.14 V
Parameter Description Std. Units
tAS Address Setup Time 1.53 ns
tAH Address Hold Time 0.29 ns
tENS REN, WEN Setup Time 1.36 ns
tENH REN, WEN Hold Time 0.15 ns
tDS Input Data (WD) Setup Time 1.33 ns
tDH Input Data (WD) Hold Time 0.66 ns
tCKQ1 Clock High to New Data Valid on RD (output retained) 7.88 ns
tCKQ2 Clock High to New Data Valid on RD (pipelined) 3.20 ns
tC2CRWH1Address collision clk-to-clk delay for reliable read access after write on
same address; applicable to opening edge
0.87 ns
tC2CWRH1Address collision clk-to-clk delay for reliable write access after read on
same address; applicable to opening edge
1.04 ns
tRSTBQ RESET Low to Data Out Low on RD (flow-through) 3.86 ns
RESET Low to Data Out Low on RD (pipelined) 3.86 ns
tREMRSTB RESET Removal 1.12 ns
tRECRSTB RESET Recovery 5.93 ns
tMPWRSTB RESET Minimum Pulse Width 1.18 ns
tCYC Clock Cycle Time 10.90 ns
FMAX Maximum Frequency 92 MHz
Notes:
1. For more information, refer to the application note Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-
Based cSoCs and FPGAs.
2. For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-101
FIFO
Figure 2-47 • FIFO Model
FIFO4K18
RW2
RD17
RW1
RD16
RW0
WW2
WW1
WW0 RD0
ESTOP
FSTOP
FULL
AFULL
EMPTY
AFVAL11
AEMPTY
AFVAL10
AFVAL0
AEVAL11
AEVAL10
AEVAL0
REN
RBLK
RCLK
WEN
WBLK
WCLK
RPIPE
WD17
WD16
WD0
RESET
IGLOOe DC and Switching Characteristics
2-102 Revision 11
Timing Waveforms
Figure 2-48 • FIFO Read
Figure 2-49 • FIFO Write
t
ENS
t
ENH
t
CKQ1
t
CKQ2
t
CYC
D
0
D
1
D
n
D
n
D
0
D
2
D
1
t
BKS
t
BKH
RCLK
RBLK
REN
RD
(flow-through)
RD
(pipelined)
WCLK
WEN
WD
t
ENS
t
ENH
t
DS
t
DH
t
CYC
DI
0
DI
1
t
BKH
t
BKS
WBLK
IGLOOe Low Power Flash FPGAs
Revision 11 2-103
Figure 2-50 • FIFO Reset
Figure 2-51 • FIFO EMPTY Flag and AEMPTY Flag Assertion
MATCH (A0)
tMPWRSTB
tRSTFG
tRSTCK
tRSTAF
RCLK/
WCLK
RESET
EMPTY
AEMPTY
WA/RA
(Address Counter)
tRSTFG
tRSTAF
FULL
AFULL
RCLK
NO MATCH NO MATCH Dist = AEF_TH MATCH (EMPTY)
t
CKAF
t
RCKEF
EMPTY
AEMPTY
t
CYC
WA/RA
(Address Counter)
IGLOOe DC and Switching Characteristics
2-104 Revision 11
Figure 2-52 • FIFO FULL Flag and AFULL Flag Assertion
Figure 2-53 • FIFO EMPTY Flag and AEMPTY Flag Deassertion
Figure 2-54 • FIFO FULL Flag and AFULL Flag Deassertion
NO MATCH NO MATCH Dist = AFF_TH MATCH (FULL)
tCKAF
tWCKFF
tCYC
WCLK
FULL
AFULL
WA/RA
(Address Counter)
WCLK
WA/RA
(Address Counter) MATCH
(EMPTY) NO MATCH NO MATCH NO MATCH Dist = AEF_TH + 1
NO MATCH
RCLK
EMPTY
1st Rising
Edge
After 1st
Write
2nd Rising
Edge
After 1st
Write
t
RCKEF
t
CKAF
AEMPTY
Dist = AFF_TH – 1
MATCH (FULL) NO MATCH NO MATCH NO MATCH NO MATCH
tWCKF
tCKAF
1st Rising
Edge
After 1st
Read
1st Rising
Edge
After 2nd
Read
RCLK
WA/RA
(Address Counter)
WCLK
FULL
AFULL
IGLOOe Low Power Flash FPGAs
Revision 11 2-105
Timing Characteristics
Applies to 1.5 V DC Core Voltage
Table 2-149 • FIFO
Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V
Parameter Description Std. Units
tENS REN, WEN Setup Time 1.99 ns
tENH REN, WEN Hold Time 0.16 ns
tBKS BLK Setup Time 0.30 ns
tBKH BLK Hold Time 0.00 ns
tDS Input Data (WD) Setup Time 0.76 ns
tDH Input Data (WD) Hold Time 0.25 ns
tCKQ1 Clock HIGH to New Data Valid on RD (pass-through) 3.33 ns
tCKQ2 Clock HIGH to New Data Valid on RD (pipelined) 1.80 ns
tRCKEF RCLK HIGH to Empty Flag Valid 3.53 ns
tWCKFF WCLK HIGH to Full Flag Valid 3.35 ns
tCKAF Clock HIGH to Almost Empty/Full Flag Valid 12.85 ns
tRSTFG RESET LOW to Empty/Full Flag Valid 3.48 ns
tRSTAF RESET LOW to Almost Empty/Full Flag Valid 12.72 ns
tRSTBQ RESET LOW to Data Out LOW on RD (pass-through) 2.02 ns
RESET LOW to Data Out LOW on RD (pipelined) 2.02 ns
tREMRSTB RESET Removal 0.61 ns
tRECRSTB RESET Recovery 3.21 ns
tMPWRSTB RESET Minimum Pulse Width 0.68 ns
tCYC Clock Cycle Time 6.24 ns
FMAX Maximum Frequency 160 MHz
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
IGLOOe DC and Switching Characteristics
2-106 Revision 11
Applies to 1.2 V DC Core Voltage
Table 2-150 • FIFO
Commercial-Case Conditions: TJ = 70°C, VCC = 1.14 V
Parameter Description Std. Units
tENS REN, WEN Setup Time 4.13 ns
tENH REN, WEN Hold Time 0.31 ns
tBKS BLK Setup Time 0.47 ns
tBKH BLK Hold Time 0.00 ns
tDS Input Data (WD) Setup Time 1.56 ns
tDH Input Data (WD) Hold Time 0.49 ns
tCKQ1 Clock HIGH to New Data Valid on RD (pass-through) 6.80 ns
tCKQ2 Clock HIGH to New Data Valid on RD (pipelined) 3.62 ns
tRCKEF RCLK HIGH to Empty Flag Valid 7.23 ns
tWCKFF WCLK HIGH to Full Flag Valid 6.85 ns
tCKAF Clock HIGH to Almost Empty/Full Flag Valid 26.61 ns
tRSTFG RESET LOW to Empty/Full Flag Valid 7.12 ns
tRSTAF RESET LOW to Almost Empty/Full Flag Valid 26.33 ns
tRSTBQ RESET LOW to Data Out LOW on RD (pass-through) 4.09 ns
RESET LOW to Data Out LOW on RD (pipelined) 4.09 ns
tREMRSTB RESET Removal 1.23 ns
tRECRSTB RESET Recovery 6.58 ns
tMPWRSTB RESET Minimum Pulse Width 1.18 ns
tCYC Clock Cycle Time 10.90 ns
FMAX Maximum Frequency 92 MHz
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
IGLOOe Low Power Flash FPGAs
Revision 11 2-107
Embedded FlashROM Characteristics
Timing Characteristics
Applies to 1.5 V DC Core Voltage
Applies to 1.2 V DC Core Voltage
Figure 2-55 • Timing Diagram
A
0
A
1
t
SU
t
HOLD
t
SU
t
HOLD
t
SU
t
HOLD
t
CKQ2
t
CKQ2
t
CKQ2
CLK
A
ddress
Data D
0
D
0
D
1
Table 2-151 • Embedded FlashROM Access Time
Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V
Parameter Description Std. Units
tSU Address Setup Time 0.58 ns
tHOLD Address Hold Time 0.00 ns
tCK2Q Clock-to-Out 34.14 ns
FMAX Maximum Clock Frequency 15 MHz
Table 2-152 • Embedded FlashROM Access Time
Commercial-Case Conditions: TJ = 70°C, VCC = 1.14 V
Parameter Description Std. Units
tSU Address Setup Time 0.59 ns
tHOLD Address Hold Time 0.00 ns
tCK2Q Clock-to-Out 52.90 ns
FMAX Maximum Clock Frequency 10 MHz
JTAG 1532 Characteristics
JTAG timing delays do not include JTAG I/Os. To obtain complete JTAG timing, add I/O buffer delays to
the corresponding standard selected; refer to the I/O timing characteristics in the "User I/O
Characteristics" section on page 2-16 for more details.
Timing Characteristics
Applies to 1.2 V DC Core Voltage
Applies to 1.5 V DC Core Voltage
Table 2-153 • JTAG 1532
Commercial-Case Conditions: TJ = 70°C, VCC = 1.14 V
Parameter Description Std. Units
tDISU Test Data Input Setup Time 1.50 ns
tDIHD Test Data Input Hold Time 3.00 ns
tTMSSU Test Mode Select Setup Time 1.50 ns
tTMDHD Test Mode Select Hold Time 3.00 ns
tTCK2Q Clock to Q (data out) 11.00 ns
tRSTB2Q Reset to Q (data out) 30.00 ns
FTCKMAX TCK Maximum Frequency 9.00 MHz
tTRSTREM ResetB Removal Time 1.18 ns
tTRSTREC ResetB Recovery Time 0.00 ns
tTRSTMPW ResetB Minimum Pulse TBD ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-7 on page 2-6 for derating values.
Table 2-154 • JTAG 1532
Commercial-Case Conditions: TJ = 70°C, VCC = 1.425 V
Parameter Description Std. Units
tDISU Test Data Input Setup Time 1.00 ns
tDIHD Test Data Input Hold Time 2.00 ns
tTMSSU Test Mode Select Setup Time 1.00 ns
tTMDHD Test Mode Select Hold Time 2.00 ns
tTCK2Q Clock to Q (data out) 8.00 ns
tRSTB2Q Reset to Q (data out) 25.00 ns
FTCKMAX TCK Maximum Frequency 15.00 MHz
tTRSTREM ResetB Removal Time 0.58 ns
tTRSTREC ResetB Recovery Time 0.00 ns
tTRSTMPW ResetB Minimum Pulse TBD ns
Note: For specific junction temperature and voltage supply levels, refer to Table 2-6 on page 2-6 for derating values.
Revision 11 3-1
3 – Pin Descriptions and Packaging
Supply Pins
GND Ground
Ground supply voltage to the core, I/O outputs, and I/O logic.
GNDQ Ground (quiet)
Quiet ground supply voltage to input buffers of I/O banks. Within the package, the GNDQ plane is
decoupled from the simultaneous switching noise originated from the output buffer ground domain. This
minimizes the noise transfer within the package and improves input signal integrity. GNDQ must always
be connected to GND on the board.
VCC Core Supply Voltage
Supply voltage to the FPGA core, nominally 1.5 V for IGLOOe V5 devices, and 1.2 V or 1.5 V for
IGLOOe V2 devices. VCC is required for powering the JTAG state machine in addition to VJTAG. Even
when a device is in bypass mode in a JTAG chain of interconnected devices, both VCC and VJTAG must
remain powered to allow JTAG signals to pass through the device.
For IGLOOe V2 devices, VCC can be switched dynamically from 1.2 V to 1.5 V or vice versa. This allows
in-system programming (ISP) when VCC is at 1.5 V and the benefit of low power operation when VCC is
at 1.2 V.
VCCIBx I/O Supply Voltage
Supply voltage to the bank's I/O output buffers and I/O logic. Bx is the I/O bank number. There are up to
eight I/O banks on IGLOOe devices plus a dedicated VJTAG bank. Each bank can have a separate VCCI
connection. All I/Os in a bank will run off the same VCCIBx supply. VCCI can be 1.2 V, 1.5 V, 1.8 V, 2.5 V,
or 3.3 V, nominal voltage. Unused I/O banks should have their corresponding VCCI pins tied to GND.
VMVx I/O Supply Voltage (quiet)
Quiet supply voltage to the input buffers of each I/O bank. x is the bank number. Within the package, the
VMV plane biases the input stage of the I/Os in the I/O banks. This minimizes the noise transfer within
the package and improves input signal integrity. Each bank must have at least one VMV connection, and
no VMV should be left unconnected. All I/Os in a bank run off the same VMVx supply. VMV is used to
provide a quiet supply voltage to the input buffers of each I/O bank. VMVx can be 1.2 V, 1.5 V, 1.8 V,
2.5 V, or 3.3 V, nominal voltage. Unused I/O banks should have their corresponding VMV pins tied to GND.
VMV and VCCI should be at the same voltage within a given I/O bank. Used VMV pins must be
connected to the corresponding VCCI pins of the same bank (i.e., VMV0 to VCCIB0, VMV1 to VCCIB1,
etc.).
VCCPLA/B/C/D/E/F PLL Supply Voltage
Supply voltage to analog PLL, nominally 1.5 V or 1.2 V, depending on the device.
• 1.5 V for IGLOOe devices
• 1.2 V or 1.5 V for IGLOOe V2 devices
When the PLLs are not used, the place-and-route tool automatically disables the unused PLLs to lower
power consumption. The user should tie unused VCCPLx and VCOMPLx pins to ground. Microsemi
recommends tying VCCPLx to VCC and using proper filtering circuits to decouple VCC noise from the
PLLs. Refer to the PLL Power Supply Decoupling section in the "Clock Conditioning Circuits in Low
Power Flash FPGAs and Mixed Signal FPGAs" chapter in the IGLOOe FPGA Fabric User’s Guide for a
complete board solution for the PLL analog power supply and ground.
There are six VCCPLX pins on IGLOOe devices.
Pin Descriptions and Packaging
3-2 Revision 11
VCOMPLA/B/C/D/E/F PLL Ground
Ground to analog PLL power supplies. When the PLLs are not used, the place-and-route tool
automatically disables the unused PLLs to lower power consumption. The user should tie unused
VCCPLx and VCOMPLx pins to ground.
There are six VCOMPL pins (PLL ground) on IGLOOe devices.
VJTAG JTAG Supply Voltage
Low power flash devices have a separate bank for the dedicated JTAG pins. The JTAG pins can be run
at any voltage from 1.5 V to 3.3 V (nominal). Isolating the JTAG power supply in a separate I/O bank
gives greater flexibility in supply selection and simplifies power supply and PCB design. If the JTAG
interface is neither used nor planned for use, the VJTAG pin together with the TRST pin could be tied to
GND. It should be noted that VCC is required to be powered for JTAG operation; VJTAG alone is
insufficient. If a device is in a JTAG chain of interconnected boards, the board containing the device can
be powered down, provided both VJTAG and VCC to the part remain powered; otherwise, JTAG signals
will not be able to transition the device, even in bypass mode.
Microsemi recommends that VPUMP and VJTAG power supplies be kept separate with independent
filtering capacitors rather than supplying them from a common rail.
VPUMP Programming Supply Voltage
IGLOOe devices support single-voltage ISP of the configuration flash and FlashROM. For programming,
VPUMP should be 3.3 V nominal. During normal device operation, VPUMP can be left floating or can be
tied (pulled up) to any voltage between 0 V and the VPUMP maximum. Programming power supply
voltage (VPUMP) range is listed in the datasheet.
When the VPUMP pin is tied to ground, it will shut off the charge pump circuitry, resulting in no sources of
oscillation from the charge pump circuitry.
For proper programming, 0.01 µF and 0.33 µF capacitors (both rated at 16 V) are to be connected in
parallel across VPUMP and GND, and positioned as close to the FPGA pins as possible.
Microsemi recommends that VPUMP and VJTAG power supplies be kept separate with independent
filtering capacitors rather than supplying them from a common rail.
User-Defined Supply Pins
VREF I/O Voltage Reference
Reference voltage for I/O minibanks. VREF pins are configured by the user from regular I/Os, and any
I/O in a bank, except JTAG I/Os, can be designated the voltage reference I/O. Only certain I/O standards
require a voltage reference—HSTL (I) and (II), SSTL2 (I) and (II), SSTL3 (I) and (II), and GTL/GTL+. One
VREF pin can support the number of I/Os available in its minibank.
IGLOOe Low Power Flash FPGAs
Revision 11 3-3
User Pins
I/O User Input/Output
The I/O pin functions as an input, output, tristate, or bidirectional buffer. Input and output signal levels are
compatible with the I/O standard selected.
During programming, I/Os become tristated and weakly pulled up to VCCI. With VCCI, VMV, and VCC
supplies continuously powered up, when the device transitions from programming to operating mode, the
I/Os are instantly configured to the desired user configuration.
Unused I/Os are configured as follows:
• Output buffer is disabled (with tristate value of high impedance)
• Input buffer is disabled (with tristate value of high impedance)
• Weak pull-up is programmed
GL Globals
GL I/Os have access to certain clock conditioning circuitry (and the PLL) and/or have direct access to the
global network (spines). Additionally, the global I/Os can be used as regular I/Os, since they have
identical capabilities. Unused GL pins are configured as inputs with pull-up resistors.
See more detailed descriptions of global I/O connectivity in the "Clock Conditioning Circuits in Low Power
Flash Devices and Mixed Signal FPGAs" chapter of the IGLOOe FPGA Fabric User’s Guide. All inputs
labeled GC/GF are direct inputs into the quadrant clocks. For example, if GAA0 is used for an input,
GAA1 and GAA2 are no longer available for input to the quadrant globals. All inputs labeled GC/GF are
direct inputs into the chip-level globals, and the rest are connected to the quadrant globals. The inputs to
the global network are multiplexed, and only one input can be used as a global input.
Refer to the I/O Structure section of the IGLOOe FPGA Fabric User’s Guide for an explanation of the
naming of global pins.
FF Flash*Freeze Mode Activation Pin
Flash*Freeze mode is available on IGLOOe devices. The FF pin is a dedicated input pin used to enter
and exit Flash*Freeze mode. The FF pin is active low, has the same characteristics as a single-ended
I/O, and must meet the maximum rise and fall times. When Flash*Freeze mode is not used in the design,
the FF pin is available as a regular I/O. The FF pin can be configured as a Schmitt trigger input.
When Flash*Freeze mode is used, the FF pin must not be left floating to avoid accidentally entering
Flash*Freeze mode. While in Flash*Freeze mode, the Flash*Freeze pin should be constantly asserted.
The Flash*Freeze pin can be used with any single-ended I/O standard supported by the I/O bank in
which the pin is located, and input signal levels compatible with the I/O standard selected. The FF pin
should be treated as a sensitive asynchronous signal. When defining pin placement and board layout,
simultaneously switching outputs (SSOs) and their effects on sensitive asynchronous pins must be
considered.
Unused FF or I/O pins are tristated with weak pull-up. This default configuration applies to both
Flash*Freeze mode and normal operation mode. No user intervention is required.
Pin Descriptions and Packaging
3-4 Revision 11
Table 3-1 shows the Flash*Freeze pin location on the available packages. The Flash*Freeze pin location
is independent of device (except for a PQ208 package), allowing migration to larger or smaller IGLOO
devices while maintaining the same pin location on the board. Refer to the "Flash*Freeze Technology
and Low Power Modes" chapter of the IGLOOe FPGA Fabric User’s Guide for more information on I/O
states during Flash*Freeze mode.
JTAG Pins
Low power flash devices have a separate bank for the dedicated JTAG pins. The JTAG pins can be run
at any voltage from 1.5 V to 3.3 V (nominal). VCC must also be powered for the JTAG state machine to
operate, even if the device is in bypass mode; VJTAG alone is insufficient. Both VJTAG and VCC to the
part must be supplied to allow JTAG signals to transition the device. Isolating the JTAG power supply in a
separate I/O bank gives greater flexibility in supply selection and simplifies power supply and PCB
design. If the JTAG interface is neither used nor planned for use, the VJTAG pin together with the TRST
pin could be tied to GND.
TCK Test Clock
Test clock input for JTAG boundary scan, ISP, and UJTAG. The TCK pin does not have an internal pull-
up/-down resistor. If JTAG is not used, Microsemi recommends tying off TCK to GND through a resistor
placed close to the FPGA pin. This prevents JTAG operation in case TMS enters an undesired state.
Note that to operate at all VJTAG voltages, 500 to 1 k will satisfy the requirements. Refer to Table 3-2
for more information.
Table 3-1 • Flash*Freeze Pin Locations for IGLOOe Devices
Package Flash*Freeze Pin
FG256 T3
FG484 W6
FG896 AH4
Table 3-2 • Recommended Tie-Off Values for the TCK and TRST Pins
VJTAG Tie-Off Resistance 1,2
VJTAG at 3.3 V 200 to 1 k
VJTAG at 2.5 V 200 to 1 k
VJTAG at 1.8 V 500 to 1 k
VJTAG at 1.5 V 500 to 1 k
Notes:
1. The TCK pin can be pulled-up or pulled-down.
2. The TRST pin is pulled-down.
3. Equivalent parallel resistance if more than one device is on the JTAG chain
IGLOOe Low Power Flash FPGAs
Revision 11 3-5
TDI Test Data Input
Serial input for JTAG boundary scan, ISP, and UJTAG usage. There is an internal weak pull-up resistor
on the TDI pin.
TDO Test Data Output
Serial output for JTAG boundary scan, ISP, and UJTAG usage.
TMS Test Mode Select
The TMS pin controls the use of the IEEE 1532 boundary scan pins (TCK, TDI, TDO, TRST). There is an
internal weak pull-up resistor on the TMS pin.
TRST Boundary Scan Reset Pin
The TRST pin functions as an active-low input to asynchronously initialize (or reset) the boundary scan
circuitry. There is an internal weak pull-up resistor on the TRST pin. If JTAG is not used, an external pull-
down resistor could be included to ensure the test access port (TAP) is held in reset mode. The resistor
values must be chosen from Ta ble 3 -2 and must satisfy the parallel resistance value requirement. The
values in Ta bl e 3-2 correspond to the resistor recommended when a single device is used, and the
equivalent parallel resistor when multiple devices are connected via a JTAG chain.
In critical applications, an upset in the JTAG circuit could allow entrance to an undesired JTAG state. In
such cases, Microsemi recommends tying off TRST to GND through a resistor placed close to the FPGA
pin.
Note that to operate at all VJTAG voltages, 500 to 1 k will satisfy the requirements.
Special Function Pins
NC No Connect
This pin is not connected to circuitry within the device. These pins can be driven to any voltage or can be
left floating with no effect on the operation of the device.
DC Do Not Connect
This pin should not be connected to any signals on the PCB. These pins should be left unconnected.
Packaging
Semiconductor technology is constantly shrinking in size while growing in capability and functional
integration. To enable next-generation silicon technologies, semiconductor packages have also evolved
to provide improved performance and flexibility.
Microsemi consistently delivers packages that provide the necessary mechanical and environmental
protection to ensure consistent reliability and performance. Microsemi IC packaging technology
efficiently supports high-density FPGAs with large-pin-count Ball Grid Arrays (BGAs), but is also flexible
enough to accommodate stringent form factor requirements for Chip Scale Packaging (CSP). In addition,
Microsemi offers a variety of packages designed to meet your most demanding application and economic
requirements for today's embedded and mobile systems.
Table 3-3 • TRST and TCK Pull-Down Recommendations
VJTAG Tie-Off Resistance*
VJTAG at 3.3 V 200 to 1 k
VJTAG at 2.5 V 200 to 1 k
VJTAG at 1.8 V 500 to 1 k
VJTAG at 1.5 V 500 to 1 k
Note: Equivalent parallel resistance if more than one device is on the JTAG chain
Pin Descriptions and Packaging
3-6 Revision 11
Related Documents
User’s Guides
IGLOOe FPGA Fabric User’s Guide
http://www.microsemi.com/soc/documents/IGLOOe_UG.pdf
Packaging Documents
The following documents provide packaging information and device selection for low power flash
devices.
Product Catalog
http://www.microsemi.com/soc/documents/ProdCat_PIB.pdf
Lists devices currently recommended for new designs and the packages available for each member of
the family. Use this document or the datasheet tables to determine the best package for your design, and
which package drawing to use.
Package Mechanical Drawings
http://www.microsemi.com/soc/documents/PckgMechDrwngs.pdf
This document contains the package mechanical drawings for all packages currently or previously
supplied by Microsemi. Use the bookmarks to navigate to the package mechanical drawings.
Additional packaging materials: http://www.microsemi.com/soc/products/solutions/package/docs.aspx.
Revision 11 4-1
4 – Package Pin Assignments
FG256
Note
For Package Manufacturing and Environmental information, visit the Resource Center at
http://www.microsemi.com/soc/products/solutions/package/docs.aspx.
Note: This is the bottom view of the package.
13579111315 246810121416
C
E
G
J
L
N
R
D
F
H
K
M
P
T
B
A
A1 Ball Pad Corner
Package Pin Assignments
4-2 Revision 11
FG256
Pin Number AGLE600 Function
A1 GND
A2 GAA0/IO00NDB0V0
A3 GAA1/IO00PDB0V0
A4 GAB0/IO01NDB0V0
A5 IO05PDB0V0
A6 IO10PDB0V1
A7 IO12PDB0V2
A8 IO16NDB0V2
A9 IO23NDB1V0
A10 IO23PDB1V0
A11 IO28NDB1V1
A12 IO28PDB1V1
A13 GBB1/IO34PDB1V1
A14 GBA0/IO35NDB1V1
A15 GBA1/IO35PDB1V1
A16 GND
B1 GAB2/IO133PDB7V1
B2 GAA2/IO134PDB7V1
B3 GNDQ
B4 GAB1/IO01PDB0V0
B5 IO05NDB0V0
B6 IO10NDB0V1
B7 IO12NDB0V2
B8 IO16PDB0V2
B9 IO20NDB1V0
B10 IO24NDB1V0
B11 IO24PDB1V0
B12 GBC1/IO33PDB1V1
B13 GBB0/IO34NDB1V1
B14 GNDQ
B15 GBA2/IO36PDB2V0
B16 IO42NDB2V0
C1 IO133NDB7V1
C2 IO134NDB7V1
C3 VMV7
C4 VCCPLA
C5 GAC0/IO02NDB0V0
C6 GAC1/IO02PDB0V0
C7 IO15NDB0V2
C8 IO15PDB0V2
C9 IO20PDB1V0
C10 IO25NDB1V0
C11 IO27PDB1V0
C12 GBC0/IO33NDB1V1
C13 VCCPLB
C14 VMV2
C15 IO36NDB2V0
C16 IO42PDB2V0
D1 IO128PDB7V1
D2 IO129PDB7V1
D3 GAC2/IO132PDB7V1
D4 VCOMPLA
D5 GNDQ
D6 IO09NDB0V1
D7 IO09PDB0V1
D8 IO13PDB0V2
D9 IO21PDB1V0
D10 IO25PDB1V0
D11 IO27NDB1V0
D12 GNDQ
D13 VCOMPLB
D14 GBB2/IO37PDB2V0
D15 IO39PDB2V0
D16 IO39NDB2V0
E1 IO128NDB7V1
E2 IO129NDB7V1
E3 IO132NDB7V1
E4 IO130PDB7V1
E5 VMV0
E6 VCCIB0
E7 VCCIB0
E8 IO13NDB0V2
FG256
Pin Number AGLE600 Function
E9 IO21NDB1V0
E10 VCCIB1
E11 VCCIB1
E12 VMV1
E13 GBC2/IO38PDB2V0
E14 IO37NDB2V0
E15 IO41NDB2V0
E16 IO41PDB2V0
F1 IO124PDB7V0
F2 IO125PDB7V0
F3 IO126PDB7V0
F4 IO130NDB7V1
F5 VCCIB7
F6 GND
F7 VCC
F8 VCC
F9 VCC
F10 VCC
F11 GND
F12 VCCIB2
F13 IO38NDB2V0
F14 IO40NDB2V0
F15 IO40PDB2V0
F16 IO45PSB2V1
G1 IO124NDB7V0
G2 IO125NDB7V0
G3 IO126NDB7V0
G4 GFC1/IO120PPB7V0
G5 VCCIB7
G6 VCC
G7 GND
G8 GND
G9 GND
G10 GND
G11 VCC
G12 VCCIB2
FG256
Pin Number AGLE600 Function
IGLOOe Low Power Flash FPGAs
Revision 11 4-3
G13 GCC1/IO50PPB2V1
G14 IO44NDB2V1
G15 IO44PDB2V1
G16 IO49NSB2V1
H1 GFB0/IO119NPB7V0
H2 GFA0/IO118NDB6V1
H3 GFB1/IO119PPB7V0
H4 VCOMPLF
H5 GFC0/IO120NPB7V0
H6 VCC
H7 GND
H8 GND
H9 GND
H10 GND
H11 VCC
H12 GCC0/IO50NPB2V1
H13 GCB1/IO51PPB2V1
H14 GCA0/IO52NPB3V0
H15 VCOMPLC
H16 GCB0/IO51NPB2V1
J1 GFA2/IO117PSB6V1
J2 GFA1/IO118PDB6V1
J3 VCCPLF
J4 IO116NDB6V1
J5 GFB2/IO116PDB6V1
J6 VCC
J7 GND
J8 GND
J9 GND
J10 GND
J11 VCC
J12 GCB2/IO54PPB3V0
J13 GCA1/IO52PPB3V0
J14 GCC2/IO55PPB3V0
J15 VCCPLC
J16 GCA2/IO53PSB3V0
FG256
Pin Number AGLE600 Function
K1 GFC2/IO115PSB6V1
K2 IO113PPB6V1
K3 IO112PDB6V1
K4 IO112NDB6V1
K5 VCCIB6
K6 VCC
K7 GND
K8 GND
K9 GND
K10 GND
K11 VCC
K12 VCCIB3
K13 IO54NPB3V0
K14 IO57NPB3V0
K15 IO55NPB3V0
K16 IO57PPB3V0
L1 IO113NPB6V1
L2 IO109PPB6V0
L3 IO108PDB6V0
L4 IO108NDB6V0
L5 VCCIB6
L6 GND
L7 VCC
L8 VCC
L9 VCC
L10 VCC
L11 GND
L12 VCCIB3
L13 GDB0/IO66NPB3V1
L14 IO60NDB3V1
L15 IO60PDB3V1
L16 IO61PDB3V1
M1 IO109NPB6V0
M2 IO106NDB6V0
M3 IO106PDB6V0
M4 GEC0/IO104NPB6V0
FG256
Pin Number AGLE600 Function
M5 VMV5
M6 VCCIB5
M7 VCCIB5
M8 IO84NDB5V0
M9 IO84PDB5V0
M10 VCCIB4
M11 VCCIB4
M12 VMV3
M13 VCCPLD
M14 GDB1/IO66PPB3V1
M15 GDC1/IO65PDB3V1
M16 IO61NDB3V1
N1 IO105PDB6V0
N2 IO105NDB6V0
N3 GEC1/IO104PPB6V0
N4 VCOMPLE
N5 GNDQ
N6 GEA2/IO101PPB5V2
N7 IO92NDB5V1
N8 IO90NDB5V1
N9 IO82NDB5V0
N10 IO74NDB4V1
N11 IO74PDB4V1
N12 GNDQ
N13 VCOMPLD
N14 VJTAG
N15 GDC0/IO65NDB3V1
N16 GDA1/IO67PDB3V1
P1 GEB1/IO103PDB6V0
P2 GEB0/IO103NDB6V0
P3 VMV6
P4 VCCPLE
P5 IO101NPB5V2
P6 IO95PPB5V1
P7 IO92PDB5V1
P8 IO90PDB5V1
FG256
Pin Number AGLE600 Function
Package Pin Assignments
4-4 Revision 11
P9 IO82PDB5V0
P10 IO76NDB4V1
P11 IO76PDB4V1
P12 VMV4
P13 TCK
P14 VPUMP
P15 TRST
P16 GDA0/IO67NDB3V1
R1 GEA1/IO102PDB6V0
R2 GEA0/IO102NDB6V0
R3 GNDQ
R4 GEC2/IO99PDB5V2
R5 IO95NPB5V1
R6 IO91NDB5V1
R7 IO91PDB5V1
R8 IO83NDB5V0
R9 IO83PDB5V0
R10 IO77NDB4V1
R11 IO77PDB4V1
R12 IO69NDB4V0
R13 GDB2/IO69PDB4V0
R14 TDI
R15 GNDQ
R16 TDO
T1 GND
T2 IO100NDB5V2
T3 FF/GEB2/IO100PDB5
V2
T4 IO99NDB5V2
T5 IO88NDB5V0
T6 IO88PDB5V0
T7 IO89NSB5V0
T8 IO80NSB4V1
T9 IO81NDB4V1
T10 IO81PDB4V1
T11 IO70NDB4V0
FG256
Pin Number AGLE600 Function
T12 GDC2/IO70PDB4V0
T13 IO68NDB4V0
T14 GDA2/IO68PDB4V0
T15 TMS
T16 GND
FG256
Pin Number AGLE600 Function
IGLOOe Low Power Flash FPGAs
Revision 11 4-5
FG484
Note
For Package Manufacturing and Environmental information, visit the Resource Center at
http://www.microsemi.com/soc/products/solutions/package/docs.aspx.
Note: This is the bottom view of the package.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
Y
AA
AB
12345678910111213141516171819202122
A1 Ball Pad Corner
Package Pin Assignments
4-6 Revision 11
FG484
Pin
Number AGLE600 Function
A1 GND
A2 GND
A3 VCCIB0
A4 IO06NDB0V1
A5 IO06PDB0V1
A6 IO08NDB0V1
A7 IO08PDB0V1
A8 IO11PDB0V1
A9 IO17PDB0V2
A10 IO18NDB0V2
A11 IO18PDB0V2
A12 IO22PDB1V0
A13 IO26PDB1V0
A14 IO29NDB1V1
A15 IO29PDB1V1
A16 IO31NDB1V1
A17 IO31PDB1V1
A18 IO32NDB1V1
A19 NC
A20 VCCIB1
A21 GND
A22 GND
AA1 GND
AA2 VCCIB6
AA3 NC
AA4 IO98PDB5V2
AA5 IO96NDB5V2
AA6 IO96PDB5V2
AA7 IO86NDB5V0
AA8 IO86PDB5V0
AA9 IO85PDB5V0
AA10 IO85NDB5V0
AA11 IO78PPB4V1
AA12 IO79NDB4V1
AA13 IO79PDB4V1
AA14 NC
AA15 NC
AA16 IO71NDB4V0
AA17 IO71PDB4V0
AA18 NC
AA19 NC
AA20 NC
AA21 VCCIB3
AA22 GND
AB1 GND
AB2 GND
AB3 VCCIB5
AB4 IO97NDB5V2
AB5 IO97PDB5V2
AB6 IO93NDB5V1
AB7 IO93PDB5V1
AB8 IO87NDB5V0
AB9 IO87PDB5V0
AB10 NC
AB11 NC
AB12 IO75NDB4V1
AB13 IO75PDB4V1
AB14 IO72NDB4V0
AB15 IO72PDB4V0
AB16 IO73NDB4V0
AB17 IO73PDB4V0
AB18 NC
AB19 NC
AB20 VCCIB4
AB21 GND
AB22 GND
B1 GND
B2 VCCIB7
B3 NC
B4 IO03NDB0V0
FG484
Pin
Number AGLE600 Function
B5 IO03PDB0V0
B6 IO07NDB0V1
B7 IO07PDB0V1
B8 IO11NDB0V1
B9 IO17NDB0V2
B10 IO14PDB0V2
B11 IO19PDB0V2
B12 IO22NDB1V0
B13 IO26NDB1V0
B14 NC
B15 NC
B16 IO30NDB1V1
B17 IO30PDB1V1
B18 IO32PDB1V1
B19 NC
B20 NC
B21 VCCIB2
B22 GND
C1 VCCIB7
C2 NC
C3 NC
C4 NC
C5 GND
C6 IO04NDB0V0
C7 IO04PDB0V0
C8 VCC
C9 VCC
C10 IO14NDB0V2
C11 IO19NDB0V2
C12 NC
C13 NC
C14 VCC
C15 VCC
C16 NC
C17 NC
FG484
Pin
Number AGLE600 Function
IGLOOe Low Power Flash FPGAs
Revision 11 4-7
C18 GND
C19 NC
C20 NC
C21 NC
C22 VCCIB2
D1 NC
D2 NC
D3 NC
D4 GND
D5 GAA0/IO00NDB0V0
D6 GAA1/IO00PDB0V0
D7 GAB0/IO01NDB0V0
D8 IO05PDB0V0
D9 IO10PDB0V1
D10 IO12PDB0V2
D11 IO16NDB0V2
D12 IO23NDB1V0
D13 IO23PDB1V0
D14 IO28NDB1V1
D15 IO28PDB1V1
D16 GBB1/IO34PDB1V1
D17 GBA0/IO35NDB1V1
D18 GBA1/IO35PDB1V1
D19 GND
D20 NC
D21 NC
D22 NC
E1 NC
E2 NC
E3 GND
E4 GAB2/IO133PDB7V1
E5 GAA2/IO134PDB7V1
E6 GNDQ
E7 GAB1/IO01PDB0V0
E8 IO05NDB0V0
FG484
Pin
Number AGLE600 Function
E9 IO10NDB0V1
E10 IO12NDB0V2
E11 IO16PDB0V2
E12 IO20NDB1V0
E13 IO24NDB1V0
E14 IO24PDB1V0
E15 GBC1/IO33PDB1V1
E16 GBB0/IO34NDB1V1
E17 GNDQ
E18 GBA2/IO36PDB2V0
E19 IO42NDB2V0
E20 GND
E21 NC
E22 NC
F1 NC
F2 IO131NDB7V1
F3 IO131PDB7V1
F4 IO133NDB7V1
F5 IO134NDB7V1
F6 VMV7
F7 VCCPLA
F8 GAC0/IO02NDB0V0
F9 GAC1/IO02PDB0V0
F10 IO15NDB0V2
F11 IO15PDB0V2
F12 IO20PDB1V0
F13 IO25NDB1V0
F14 IO27PDB1V0
F15 GBC0/IO33NDB1V1
F16 VCCPLB
F17 VMV2
F18 IO36NDB2V0
F19 IO42PDB2V0
F20 NC
F21 NC
FG484
Pin
Number AGLE600 Function
F22 NC
G1 IO127NDB7V1
G2 IO127PDB7V1
G3 NC
G4 IO128PDB7V1
G5 IO129PDB7V1
G6 GAC2/IO132PDB7V1
G7 VCOMPLA
G8 GNDQ
G9 IO09NDB0V1
G10 IO09PDB0V1
G11 IO13PDB0V2
G12 IO21PDB1V0
G13 IO25PDB1V0
G14 IO27NDB1V0
G15 GNDQ
G16 VCOMPLB
G17 GBB2/IO37PDB2V0
G18 IO39PDB2V0
G19 IO39NDB2V0
G20 IO43PDB2V0
G21 IO43NDB2V0
G22 NC
H1 NC
H2 NC
H3 VCC
H4 IO128NDB7V1
H5 IO129NDB7V1
H6 IO132NDB7V1
H7 IO130PDB7V1
H8 VMV0
H9 VCCIB0
H10 VCCIB0
H11 IO13NDB0V2
H12 IO21NDB1V0
FG484
Pin
Number AGLE600 Function
Package Pin Assignments
4-8 Revision 11
H13 VCCIB1
H14 VCCIB1
H15 VMV1
H16 GBC2/IO38PDB2V0
H17 IO37NDB2V0
H18 IO41NDB2V0
H19 IO41PDB2V0
H20 VCC
H21 NC
H22 NC
J1 IO123NDB7V0
J2 IO123PDB7V0
J3 NC
J4 IO124PDB7V0
J5 IO125PDB7V0
J6 IO126PDB7V0
J7 IO130NDB7V1
J8 VCCIB7
J9 GND
J10 VCC
J11 VCC
J12 VCC
J13 VCC
J14 GND
J15 VCCIB2
J16 IO38NDB2V0
J17 IO40NDB2V0
J18 IO40PDB2V0
J19 IO45PPB2V1
J20 NC
J21 IO48PDB2V1
J22 IO46PDB2V1
K1 IO121NDB7V0
K2 IO121PDB7V0
K3 NC
FG484
Pin
Number AGLE600 Function
K4 IO124NDB7V0
K5 IO125NDB7V0
K6 IO126NDB7V0
K7 GFC1/IO120PPB7V0
K8 VCCIB7
K9 VCC
K10 GND
K11 GND
K12 GND
K13 GND
K14 VCC
K15 VCCIB2
K16 GCC1/IO50PPB2V1
K17 IO44NDB2V1
K18 IO44PDB2V1
K19 IO49NPB2V1
K20 IO45NPB2V1
K21 IO48NDB2V1
K22 IO46NDB2V1
L1 NC
L2 IO122PDB7V0
L3 IO122NDB7V0
L4 GFB0/IO119NPB7V0
L5 GFA0/IO118NDB6V1
L6 GFB1/IO119PPB7V0
L7 VCOMPLF
L8 GFC0/IO120NPB7V0
L9 VCC
L10 GND
L11 GND
L12 GND
L13 GND
L14 VCC
L15 GCC0/IO50NPB2V1
L16 GCB1/IO51PPB2V1
FG484
Pin
Number AGLE600 Function
L17 GCA0/IO52NPB3V0
L18 VCOMPLC
L19 GCB0/IO51NPB2V1
L20 IO49PPB2V1
L21 IO47NDB2V1
L22 IO47PDB2V1
M1 NC
M2 IO114NPB6V1
M3 IO117NDB6V1
M4 GFA2/IO117PDB6V1
M5 GFA1/IO118PDB6V1
M6 VCCPLF
M7 IO116NDB6V1
M8 GFB2/IO116PDB6V1
M9 VCC
M10 GND
M11 GND
M12 GND
M13 GND
M14 VCC
M15 GCB2/IO54PPB3V0
M16 GCA1/IO52PPB3V0
M17 GCC2/IO55PPB3V0
M18 VCCPLC
M19 GCA2/IO53PDB3V0
M20 IO53NDB3V0
M21 IO56PDB3V0
M22 NC
N1 IO114PPB6V1
N2 IO111NDB6V1
N3 NC
N4 GFC2/IO115PPB6V1
N5 IO113PPB6V1
N6 IO112PDB6V1
N7 IO112NDB6V1
FG484
Pin
Number AGLE600 Function
IGLOOe Low Power Flash FPGAs
Revision 11 4-9
N8 VCCIB6
N9 VCC
N10 GND
N11 GND
N12 GND
N13 GND
N14 VCC
N15 VCCIB3
N16 IO54NPB3V0
N17 IO57NPB3V0
N18 IO55NPB3V0
N19 IO57PPB3V0
N20 NC
N21 IO56NDB3V0
N22 IO58PDB3V0
P1 NC
P2 IO111PDB6V1
P3 IO115NPB6V1
P4 IO113NPB6V1
P5 IO109PPB6V0
P6 IO108PDB6V0
P7 IO108NDB6V0
P8 VCCIB6
P9 GND
P10 VCC
P11 VCC
P12 VCC
P13 VCC
P14 GND
P15 VCCIB3
P16 GDB0/IO66NPB3V1
P17 IO60NDB3V1
P18 IO60PDB3V1
P19 IO61PDB3V1
P20 NC
FG484
Pin
Number AGLE600 Function
P21 IO59PDB3V0
P22 IO58NDB3V0
R1 NC
R2 IO110PDB6V0
R3 VCC
R4 IO109NPB6V0
R5 IO106NDB6V0
R6 IO106PDB6V0
R7 GEC0/IO104NPB6V0
R8 VMV5
R9 VCCIB5
R10 VCCIB5
R11 IO84NDB5V0
R12 IO84PDB5V0
R13 VCCIB4
R14 VCCIB4
R15 VMV3
R16 VCCPLD
R17 GDB1/IO66PPB3V1
R18 GDC1/IO65PDB3V1
R19 IO61NDB3V1
R20 VCC
R21 IO59NDB3V0
R22 IO62PDB3V1
T1 NC
T2 IO110NDB6V0
T3 NC
T4 IO105PDB6V0
T5 IO105NDB6V0
T6 GEC1/IO104PPB6V0
T7 VCOMPLE
T8 GNDQ
T9 GEA2/IO101PPB5V2
T10 IO92NDB5V1
T11 IO90NDB5V1
FG484
Pin
Number AGLE600 Function
T12 IO82NDB5V0
T13 IO74NDB4V1
T14 IO74PDB4V1
T15 GNDQ
T16 VCOMPLD
T17 VJTAG
T18 GDC0/IO65NDB3V1
T19 GDA1/IO67PDB3V1
T20 NC
T21 IO64PDB3V1
T22 IO62NDB3V1
U1 NC
U2 IO107PDB6V0
U3 IO107NDB6V0
U4 GEB1/IO103PDB6V0
U5 GEB0/IO103NDB6V0
U6 VMV6
U7 VCCPLE
U8 IO101NPB5V2
U9 IO95PPB5V1
U10 IO92PDB5V1
U11 IO90PDB5V1
U12 IO82PDB5V0
U13 IO76NDB4V1
U14 IO76PDB4V1
U15 VMV4
U16 TCK
U17 VPUMP
U18 TRST
U19 GDA0/IO67NDB3V1
U20 NC
U21 IO64NDB3V1
U22 IO63PDB3V1
V1 NC
V2 NC
FG484
Pin
Number AGLE600 Function
Package Pin Assignments
4-10 Revision 11
V3 GND
V4 GEA1/IO102PDB6V0
V5 GEA0/IO102NDB6V0
V6 GNDQ
V7 GEC2/IO99PDB5V2
V8 IO95NPB5V1
V9 IO91NDB5V1
V10 IO91PDB5V1
V11 IO83NDB5V0
V12 IO83PDB5V0
V13 IO77NDB4V1
V14 IO77PDB4V1
V15 IO69NDB4V0
V16 GDB2/IO69PDB4V0
V17 TDI
V18 GNDQ
V19 TDO
V20 GND
V21 NC
V22 IO63NDB3V1
W1 NC
W2 NC
W3 NC
W4 GND
W5 IO100NDB5V2
W6 FF/GEB2/IO100PDB5V2
W7 IO99NDB5V2
W8 IO88NDB5V0
W9 IO88PDB5V0
W10 IO89NDB5V0
W11 IO80NDB4V1
W12 IO81NDB4V1
W13 IO81PDB4V1
W14 IO70NDB4V0
W15 GDC2/IO70PDB4V0
FG484
Pin
Number AGLE600 Function
W16 IO68NDB4V0
W17 GDA2/IO68PDB4V0
W18 TMS
W19 GND
W20 NC
W21 NC
W22 NC
Y1 VCCIB6
Y2 NC
Y3 NC
Y4 IO98NDB5V2
Y5 GND
Y6 IO94NDB5V1
Y7 IO94PDB5V1
Y8 VCC
Y9 VCC
Y10 IO89PDB5V0
Y11 IO80PDB4V1
Y12 IO78NPB4V1
Y13 NC
Y14 VCC
Y15 VCC
Y16 NC
Y17 NC
Y18 GND
Y19 NC
Y20 NC
Y21 NC
Y22 VCCIB3
FG484
Pin
Number AGLE600 Function
IGLOOe Low Power Flash FPGAs
Revision 11 4-11
FG484
Pin
Number AGLE3000 Function
A1 GND
A2 GND
A3 VCCIB0
A4 IO10NDB0V1
A5 IO10PDB0V1
A6 IO16NDB0V1
A7 IO16PDB0V1
A8 IO18PDB0V2
A9 IO24PDB0V2
A10 IO28NDB0V3
A11 IO28PDB0V3
A12 IO46PDB1V0
A13 IO54PDB1V1
A14 IO56NDB1V1
A15 IO56PDB1V1
A16 IO64NDB1V2
A17 IO64PDB1V2
A18 IO72NDB1V3
A19 IO74NDB1V4
A20 VCCIB1
A21 GND
A22 GND
AA1 GND
AA2 VCCIB6
AA3 IO228PDB5V4
AA4 IO224PDB5V3
AA5 IO218NDB5V3
AA6 IO218PDB5V3
AA7 IO212NDB5V2
AA8 IO212PDB5V2
AA9 IO198PDB5V0
AA10 IO198NDB5V0
AA11 IO188PPB4V4
AA12 IO180NDB4V3
AA13 IO180PDB4V3
AA14 IO170NDB4V2
AA15 IO170PDB4V2
AA16 IO166NDB4V1
AA17 IO166PDB4V1
AA18 IO160NDB4V0
AA19 IO160PDB4V0
AA20 IO158NPB4V0
AA21 VCCIB3
AA22 GND
AB1 GND
AB2 GND
AB3 VCCIB5
AB4 IO216NDB5V2
AB5 IO216PDB5V2
AB6 IO210NDB5V2
AB7 IO210PDB5V2
AB8 IO208NDB5V1
AB9 IO208PDB5V1
AB10 IO197NDB5V0
AB11 IO197PDB5V0
AB12 IO174NDB4V2
AB13 IO174PDB4V2
AB14 IO172NDB4V2
AB15 IO172PDB4V2
AB16 IO168NDB4V1
AB17 IO168PDB4V1
AB18 IO162NDB4V1
AB19 IO162PDB4V1
AB20 VCCIB4
AB21 GND
AB22 GND
B1 GND
B2 VCCIB7
B3 IO06PPB0V0
B4 IO08NDB0V0
FG484
Pin
Number AGLE3000 Function
B5 IO08PDB0V0
B6 IO14NDB0V1
B7 IO14PDB0V1
B8 IO18NDB0V2
B9 IO24NDB0V2
B10 IO34PDB0V4
B11 IO40PDB0V4
B12 IO46NDB1V0
B13 IO54NDB1V1
B14 IO62NDB1V2
B15 IO62PDB1V2
B16 IO68NDB1V3
B17 IO68PDB1V3
B18 IO72PDB1V3
B19 IO74PDB1V4
B20 IO76NPB1V4
B21 VCCIB2
B22 GND
C1 VCCIB7
C2 IO303PDB7V3
C3 IO305PDB7V3
C4 IO06NPB0V0
C5 GND
C6 IO12NDB0V1
C7 IO12PDB0V1
C8 VCC
C9 VCC
C10 IO34NDB0V4
C11 IO40NDB0V4
C12 IO48NDB1V0
C13 IO48PDB1V0
C14 VCC
C15 VCC
C16 IO70NDB1V3
C17 IO70PDB1V3
FG484
Pin
Number AGLE3000 Function
Package Pin Assignments
4-12 Revision 11
C18 GND
C19 IO76PPB1V4
C20 IO88NDB2V0
C21 IO94PPB2V1
C22 VCCIB2
D1 IO293PDB7V2
D2 IO303NDB7V3
D3 IO305NDB7V3
D4 GND
D5 GAA0/IO00NDB0V0
D6 GAA1/IO00PDB0V0
D7 GAB0/IO01NDB0V0
D8 IO20PDB0V2
D9 IO22PDB0V2
D10 IO30PDB0V3
D11 IO38NDB0V4
D12 IO52NDB1V1
D13 IO52PDB1V1
D14 IO66NDB1V3
D15 IO66PDB1V3
D16 GBB1/IO80PDB1V4
D17 GBA0/IO81NDB1V4
D18 GBA1/IO81PDB1V4
D19 GND
D20 IO88PDB2V0
D21 IO90PDB2V1
D22 IO94NPB2V1
E1 IO293NDB7V2
E2 IO299PPB7V3
E3 GND
E4 GAB2/IO308PDB7V4
E5 GAA2/IO309PDB7V4
E6 GNDQ
E7 GAB1/IO01PDB0V0
E8 IO20NDB0V2
FG484
Pin
Number AGLE3000 Function
E9 IO22NDB0V2
E10 IO30NDB0V3
E11 IO38PDB0V4
E12 IO44NDB1V0
E13 IO58NDB1V2
E14 IO58PDB1V2
E15 GBC1/IO79PDB1V4
E16 GBB0/IO80NDB1V4
E17 GNDQ
E18 GBA2/IO82PDB2V0
E19 IO86NDB2V0
E20 GND
E21 IO90NDB2V1
E22 IO98PDB2V2
F1 IO299NPB7V3
F2 IO301NDB7V3
F3 IO301PDB7V3
F4 IO308NDB7V4
F5 IO309NDB7V4
F6 VMV7
F7 VCCPLA
F8 GAC0/IO02NDB0V0
F9 GAC1/IO02PDB0V0
F10 IO32NDB0V3
F11 IO32PDB0V3
F12 IO44PDB1V0
F13 IO50NDB1V1
F14 IO60PDB1V2
F15 GBC0/IO79NDB1V4
F16 VCCPLB
F17 VMV2
F18 IO82NDB2V0
F19 IO86PDB2V0
F20 IO96PDB2V1
F21 IO96NDB2V1
FG484
Pin
Number AGLE3000 Function
F22 IO98NDB2V2
G1 IO289NDB7V1
G2 IO289PDB7V1
G3 IO291PPB7V2
G4 IO295PDB7V2
G5 IO297PDB7V2
G6 GAC2/IO307PDB7V4
G7 VCOMPLA
G8 GNDQ
G9 IO26NDB0V3
G10 IO26PDB0V3
G11 IO36PDB0V4
G12 IO42PDB1V0
G13 IO50PDB1V1
G14 IO60NDB1V2
G15 GNDQ
G16 VCOMPLB
G17 GBB2/IO83PDB2V0
G18 IO92PDB2V1
G19 IO92NDB2V1
G20 IO102PDB2V2
G21 IO102NDB2V2
G22 IO105NDB2V2
H1 IO286PSB7V1
H2 IO291NPB7V2
H3 VCC
H4 IO295NDB7V2
H5 IO297NDB7V2
H6 IO307NDB7V4
H7 IO287PDB7V1
H8 VMV0
H9 VCCIB0
H10 VCCIB0
H11 IO36NDB0V4
H12 IO42NDB1V0
FG484
Pin
Number AGLE3000 Function
IGLOOe Low Power Flash FPGAs
Revision 11 4-13
H13 VCCIB1
H14 VCCIB1
H15 VMV1
H16 GBC2/IO84PDB2V0
H17 IO83NDB2V0
H18 IO100NDB2V2
H19 IO100PDB2V2
H20 VCC
H21 VMV2
H22 IO105PDB2V2
J1 IO285NDB7V1
J2 IO285PDB7V1
J3 VMV7
J4 IO279PDB7V0
J5 IO283PDB7V1
J6 IO281PDB7V0
J7 IO287NDB7V1
J8 VCCIB7
J9 GND
J10 VCC
J11 VCC
J12 VCC
J13 VCC
J14 GND
J15 VCCIB2
J16 IO84NDB2V0
J17 IO104NDB2V2
J18 IO104PDB2V2
J19 IO106PPB2V3
J20 GNDQ
J21 IO109PDB2V3
J22 IO107PDB2V3
K1 IO277NDB7V0
K2 IO277PDB7V0
K3 GNDQ
FG484
Pin
Number AGLE3000 Function
K4 IO279NDB7V0
K5 IO283NDB7V1
K6 IO281NDB7V0
K7 GFC1/IO275PPB7V0
K8 VCCIB7
K9 VCC
K10 GND
K11 GND
K12 GND
K13 GND
K14 VCC
K15 VCCIB2
K16 GCC1/IO112PPB2V3
K17 IO108NDB2V3
K18 IO108PDB2V3
K19 IO110NPB2V3
K20 IO106NPB2V3
K21 IO109NDB2V3
K22 IO107NDB2V3
L1 IO257PSB6V2
L2 IO276PDB7V0
L3 IO276NDB7V0
L4 GFB0/IO274NPB7V0
L5 GFA0/IO273NDB6V4
L6 GFB1/IO274PPB7V0
L7 VCOMPLF
L8 GFC0/IO275NPB7V0
L9 VCC
L10 GND
L11 GND
L12 GND
L13 GND
L14 VCC
L15 GCC0/IO112NPB2V3
L16 GCB1/IO113PPB2V3
FG484
Pin
Number AGLE3000 Function
L17 GCA0/IO114NPB3V0
L18 VCOMPLC
L19 GCB0/IO113NPB2V3
L20 IO110PPB2V3
L21 IO111NDB2V3
L22 IO111PDB2V3
M1 GNDQ
M2 IO255NPB6V2
M3 IO272NDB6V4
M4 GFA2/IO272PDB6V4
M5 GFA1/IO273PDB6V4
M6 VCCPLF
M7 IO271NDB6V4
M8 GFB2/IO271PDB6V4
M9 VCC
M10 GND
M11 GND
M12 GND
M13 GND
M14 VCC
M15 GCB2/IO116PPB3V0
M16 GCA1/IO114PPB3V0
M17 GCC2/IO117PPB3V0
M18 VCCPLC
M19 GCA2/IO115PDB3V0
M20 IO115NDB3V0
M21 IO126PDB3V1
M22 IO124PSB3V1
N1 IO255PPB6V2
N2 IO253NDB6V2
N3 VMV6
N4 GFC2/IO270PPB6V4
N5 IO261PPB6V3
N6 IO263PDB6V3
N7 IO263NDB6V3
FG484
Pin
Number AGLE3000 Function
Package Pin Assignments
4-14 Revision 11
N8 VCCIB6
N9 VCC
N10 GND
N11 GND
N12 GND
N13 GND
N14 VCC
N15 VCCIB3
N16 IO116NPB3V0
N17 IO132NPB3V2
N18 IO117NPB3V0
N19 IO132PPB3V2
N20 GNDQ
N21 IO126NDB3V1
N22 IO128PDB3V1
P1 IO247PDB6V1
P2 IO253PDB6V2
P3 IO270NPB6V4
P4 IO261NPB6V3
P5 IO249PPB6V1
P6 IO259PDB6V3
P7 IO259NDB6V3
P8 VCCIB6
P9 GND
P10 VCC
P11 VCC
P12 VCC
P13 VCC
P14 GND
P15 VCCIB3
P16 GDB0/IO152NPB3V4
P17 IO136NDB3V2
P18 IO136PDB3V2
P19 IO138PDB3V3
P20 VMV3
FG484
Pin
Number AGLE3000 Function
P21 IO130PDB3V2
P22 IO128NDB3V1
R1 IO247NDB6V1
R2 IO245PDB6V1
R3 VCC
R4 IO249NPB6V1
R5 IO251NDB6V2
R6 IO251PDB6V2
R7 GEC0/IO236NPB6V0
R8 VMV5
R9 VCCIB5
R10 VCCIB5
R11 IO196NDB5V0
R12 IO196PDB5V0
R13 VCCIB4
R14 VCCIB4
R15 VMV3
R16 VCCPLD
R17 GDB1/IO152PPB3V4
R18 GDC1/IO151PDB3V4
R19 IO138NDB3V3
R20 VCC
R21 IO130NDB3V2
R22 IO134PDB3V2
T1 IO243PPB6V1
T2 IO245NDB6V1
T3 IO243NPB6V1
T4 IO241PDB6V0
T5 IO241NDB6V0
T6 GEC1/IO236PPB6V0
T7 VCOMPLE
T8 GNDQ
T9 GEA2/IO233PPB5V4
T10 IO206NDB5V1
T11 IO202NDB5V1
FG484
Pin
Number AGLE3000 Function
T12 IO194NDB5V0
T13 IO186NDB4V4
T14 IO186PDB4V4
T15 GNDQ
T16 VCOMPLD
T17 VJTAG
T18 GDC0/IO151NDB3V4
T19 GDA1/IO153PDB3V4
T20 IO144PDB3V3
T21 IO140PDB3V3
T22 IO134NDB3V2
U1 IO240PPB6V0
U2 IO238PDB6V0
U3 IO238NDB6V0
U4 GEB1/IO235PDB6V0
U5 GEB0/IO235NDB6V0
U6 VMV6
U7 VCCPLE
U8 IO233NPB5V4
U9 IO222PPB5V3
U10 IO206PDB5V1
U11 IO202PDB5V1
U12 IO194PDB5V0
U13 IO176NDB4V2
U14 IO176PDB4V2
U15 VMV4
U16 TCK
U17 VPUMP
U18 TRST
U19 GDA0/IO153NDB3V4
U20 IO144NDB3V3
U21 IO140NDB3V3
U22 IO142PDB3V3
V1 IO239PDB6V0
V2 IO240NPB6V0
FG484
Pin
Number AGLE3000 Function
IGLOOe Low Power Flash FPGAs
Revision 11 4-15
V3 GND
V4 GEA1/IO234PDB6V0
V5 GEA0/IO234NDB6V0
V6 GNDQ
V7 GEC2/IO231PDB5V4
V8 IO222NPB5V3
V9 IO204NDB5V1
V10 IO204PDB5V1
V11 IO195NDB5V0
V12 IO195PDB5V0
V13 IO178NDB4V3
V14 IO178PDB4V3
V15 IO155NDB4V0
V16 GDB2/IO155PDB4V0
V17 TDI
V18 GNDQ
V19 TDO
V20 GND
V21 IO146PDB3V4
V22 IO142NDB3V3
W1 IO239NDB6V0
W2 IO237PDB6V0
W3 IO230PSB5V4
W4 GND
W5 IO232NDB5V4
W6 FF/GEB2/IO232PDB5
V4
W7 IO231NDB5V4
W8 IO214NDB5V2
W9 IO214PDB5V2
W10 IO200NDB5V0
W11 IO192NDB4V4
W12 IO184NDB4V3
W13 IO184PDB4V3
W14 IO156NDB4V0
FG484
Pin
Number AGLE3000 Function
W15 GDC2/IO156PDB4V0
W16 IO154NDB4V0
W17 GDA2/IO154PDB4V0
W18 TMS
W19 GND
W20 IO150NDB3V4
W21 IO146NDB3V4
W22 IO148PPB3V4
Y1 VCCIB6
Y2 IO237NDB6V0
Y3 IO228NDB5V4
Y4 IO224NDB5V3
Y5 GND
Y6 IO220NDB5V3
Y7 IO220PDB5V3
Y8 VCC
Y9 VCC
Y10 IO200PDB5V0
Y11 IO192PDB4V4
Y12 IO188NPB4V4
Y13 IO187PSB4V4
Y14 VCC
Y15 VCC
Y16 IO164NDB4V1
Y17 IO164PDB4V1
Y18 GND
Y19 IO158PPB4V0
Y20 IO150PDB3V4
Y21 IO148NPB3V4
Y22 VCCIB3
FG484
Pin
Number AGLE3000 Function
Package Pin Assignments
4-16 Revision 11
FG896
Note
For Package Manufacturing and Environmental information, visit the Resource Center at
http://www.microsemi.com/soc/products/solutions/package/docs.aspx.
Note: This is the bottom view of the package.
A1 Ball Pad Corner
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
Y
AA
AB
AC
AD
AE
AF
123456789101112131415161718192021222324252627282930
AG
AH
AJ
AK
IGLOOe Low Power Flash FPGAs
Revision 11 4-17
FG896
Pin Number
AGLE3000
Function
A2 GND
A3 GND
A4 IO14NPB0V1
A5 GND
A6 IO07NPB0V0
A7 GND
A8 IO09NDB0V1
A9 IO17NDB0V2
A10 IO17PDB0V2
A11 IO21NDB0V2
A12 IO21PDB0V2
A13 IO33NDB0V4
A14 IO33PDB0V4
A15 IO35NDB0V4
A16 IO35PDB0V4
A17 IO41NDB1V0
A18 IO43NDB1V0
A19 IO43PDB1V0
A20 IO45NDB1V0
A21 IO45PDB1V0
A22 IO57NDB1V2
A23 IO57PDB1V2
A24 GND
A25 IO69PPB1V3
A26 GND
A27 GBC1/IO79PPB1V4
A28 GND
A29 GND
AA1 IO256PDB6V2
AA2 IO248PDB6V1
AA3 IO248NDB6V1
AA4 IO246NDB6V1
AA5 GEA1/IO234PDB6V0
AA6 GEA0/IO234NDB6V0
AA7 IO243PPB6V1
AA8 IO245NDB6V1
AA9 GEB1/IO235PPB6V0
AA10 VCC
AA11 IO226PPB5V4
AA12 VCCIB5
AA13 VCCIB5
AA14 VCCIB5
AA15 VCCIB5
AA16 VCCIB4
AA17 VCCIB4
AA18 VCCIB4
AA19 VCCIB4
AA20 IO174PDB4V2
AA21 VCC
AA22 IO142NPB3V3
AA23 IO144NDB3V3
AA24 IO144PDB3V3
AA25 IO146NDB3V4
AA26 IO146PDB3V4
AA27 IO147PDB3V4
AA28 IO139NDB3V3
AA29 IO139PDB3V3
AA30 IO133NDB3V2
AB1 IO256NDB6V2
AB2 IO244PDB6V1
AB3 IO244NDB6V1
AB4 IO241PDB6V0
AB5 IO241NDB6V0
AB6 IO243NPB6V1
AB7 VCCIB6
AB8 VCCPLE
AB9 VCC
AB10 IO222PDB5V3
AB11 IO218PPB5V3
AB12 IO206NDB5V1
FG896
Pin Number
AGLE3000
Function
AB13 IO206PDB5V1
AB14 IO198NDB5V0
AB15 IO198PDB5V0
AB16 IO192NDB4V4
AB17 IO192PDB4V4
AB18 IO178NDB4V3
AB19 IO178PDB4V3
AB20 IO174NDB4V2
AB21 IO162NPB4V1
AB22 VCC
AB23 VCCPLD
AB24 VCCIB3
AB25 IO150PDB3V4
AB26 IO148PDB3V4
AB27 IO147NDB3V4
AB28 IO145PDB3V3
AB29 IO143PDB3V3
AB30 IO137PDB3V2
AC1 IO254PDB6V2
AC2 IO254NDB6V2
AC3 IO240PDB6V0
AC4 GEC1/IO236PDB6V0
AC5 IO237PDB6V0
AC6 IO237NDB6V0
AC7 VCOMPLE
AC8 GND
AC9 IO226NPB5V4
AC10 IO222NDB5V3
AC11 IO216NPB5V2
AC12 IO210NPB5V2
AC13 IO204NDB5V1
AC14 IO204PDB5V1
AC15 IO194NDB5V0
AC16 IO188NDB4V4
AC17 IO188PDB4V4
FG896
Pin Number
AGLE3000
Function
Package Pin Assignments
4-18 Revision 11
AC18 IO182PPB4V3
AC19 IO170NPB4V2
AC20 IO164NDB4V1
AC21 IO164PDB4V1
AC22 IO162PPB4V1
AC23 GND
AC24 VCOMPLD
AC25 IO150NDB3V4
AC26 IO148NDB3V4
AC27 GDA1/IO153PDB3V4
AC28 IO145NDB3V3
AC29 IO143NDB3V3
AC30 IO137NDB3V2
AD1 GND
AD2 IO242NPB6V1
AD3 IO240NDB6V0
AD4 GEC0/IO236NDB6V0
AD5 VCCIB6
AD6 GNDQ
AD6 GNDQ
AD7 VCC
AD8 VMV5
AD9 VCCIB5
AD10 IO224PPB5V3
AD11 IO218NPB5V3
AD12 IO216PPB5V2
AD13 IO210PPB5V2
AD14 IO202PPB5V1
AD15 IO194PDB5V0
AD16 IO190PDB4V4
AD17 IO182NPB4V3
AD18 IO176NDB4V2
AD19 IO176PDB4V2
AD20 IO170PPB4V2
AD21 IO166PDB4V1
FG896
Pin Number
AGLE3000
Function
AD22 VCCIB4
AD23 TCK
AD24 VCC
AD25 TRST
AD26 VCCIB3
AD27 GDA0/IO153NDB3V4
AD28 GDC0/IO151NDB3V4
AD29 GDC1/IO151PDB3V4
AD30 GND
AE1 IO242PPB6V1
AE2 VCC
AE3 IO239PDB6V0
AE4 IO239NDB6V0
AE5 VMV6
AE5 VMV6
AE6 GND
AE7 GNDQ
AE8 IO230NDB5V4
AE9 IO224NPB5V3
AE10 IO214NPB5V2
AE11 IO212NDB5V2
AE12 IO212PDB5V2
AE13 IO202NPB5V1
AE14 IO200NDB5V0
AE15 IO196PDB5V0
AE16 IO190NDB4V4
AE17 IO184PDB4V3
AE18 IO184NDB4V3
AE19 IO172PDB4V2
AE20 IO172NDB4V2
AE21 IO166NDB4V1
AE22 IO160PDB4V0
AE23 GNDQ
AE24 VMV4
AE25 GND
FG896
Pin Number
AGLE3000
Function
AE26 GDB0/IO152NDB3V4
AE27 GDB1/IO152PDB3V4
AE28 VMV3
AE28 VMV3
AE29 VCC
AE30 IO149PDB3V4
AF1 GND
AF2 IO238PPB6V0
AF3 VCCIB6
AF4 IO220NPB5V3
AF5 VCC
AF6 IO228NDB5V4
AF7 VCCIB5
AF8 IO230PDB5V4
AF9 IO229NDB5V4
AF10 IO229PDB5V4
AF11 IO214PPB5V2
AF12 IO208NDB5V1
AF13 IO208PDB5V1
AF14 IO200PDB5V0
AF15 IO196NDB5V0
AF16 IO186NDB4V4
AF17 IO186PDB4V4
AF18 IO180NDB4V3
AF19 IO180PDB4V3
AF20 IO168NDB4V1
AF21 IO168PDB4V1
AF22 IO160NDB4V0
AF23 IO158NPB4V0
AF24 VCCIB4
AF25 IO154NPB4V0
AF26 VCC
AF27 TDO
AF28 VCCIB3
AF29 GNDQ
FG896
Pin Number
AGLE3000
Function
IGLOOe Low Power Flash FPGAs
Revision 11 4-19
AF29 GNDQ
AF30 GND
AG1 IO238NPB6V0
AG2 VCC
AG3 IO232NPB5V4
AG4 GND
AG5 IO220PPB5V3
AG6 IO228PDB5V4
AG7 IO231NDB5V4
AG8 GEC2/IO231PDB5V4
AG9 IO225NPB5V3
AG10 IO223NPB5V3
AG11 IO221PDB5V3
AG12 IO221NDB5V3
AG13 IO205NPB5V1
AG14 IO199NDB5V0
AG15 IO199PDB5V0
AG16 IO187NDB4V4
AG17 IO187PDB4V4
AG18 IO181NDB4V3
AG19 IO171PPB4V2
AG20 IO165NPB4V1
AG21 IO161NPB4V0
AG22 IO159NDB4V0
AG23 IO159PDB4V0
AG24 IO158PPB4V0
AG25 GDB2/IO155PDB4V0
AG26 GDA2/IO154PPB4V0
AG27 GND
AG28 VJTAG
AG29 VCC
AG30 IO149NDB3V4
AH1 GND
AH2 IO233NPB5V4
AH3 VCC
FG896
Pin Number
AGLE3000
Function
AH4 FF/GEB2/IO232PPB5
V4
AH5 VCCIB5
AH6 IO219NDB5V3
AH7 IO219PDB5V3
AH8 IO227NDB5V4
AH9 IO227PDB5V4
AH10 IO225PPB5V3
AH11 IO223PPB5V3
AH12 IO211NDB5V2
AH13 IO211PDB5V2
AH14 IO205PPB5V1
AH15 IO195NDB5V0
AH16 IO185NDB4V3
AH17 IO185PDB4V3
AH18 IO181PDB4V3
AH19 IO177NDB4V2
AH20 IO171NPB4V2
AH21 IO165PPB4V1
AH22 IO161PPB4V0
AH23 IO157NDB4V0
AH24 IO157PDB4V0
AH25 IO155NDB4V0
AH26 VCCIB4
AH27 TDI
AH28 VCC
AH29 VPUMP
AH30 GND
AJ1 GND
AJ2 GND
AJ3 GEA2/IO233PPB5V4
AJ4 VCC
AJ5 IO217NPB5V2
AJ6 VCC
AJ7 IO215NPB5V2
FG896
Pin Number
AGLE3000
Function
AJ8 IO213NDB5V2
AJ9 IO213PDB5V2
AJ10 IO209NDB5V1
AJ11 IO209PDB5V1
AJ12 IO203NDB5V1
AJ13 IO203PDB5V1
AJ14 IO197NDB5V0
AJ15 IO195PDB5V0
AJ16 IO183NDB4V3
AJ17 IO183PDB4V3
AJ18 IO179NPB4V3
AJ19 IO177PDB4V2
AJ20 IO173NDB4V2
AJ21 IO173PDB4V2
AJ22 IO163NDB4V1
AJ23 IO163PDB4V1
AJ24 IO167NPB4V1
AJ25 VCC
AJ26 IO156NPB4V0
AJ27 VCC
AJ28 TMS
AJ29 GND
AJ30 GND
AK2 GND
AK3 GND
AK4 IO217PPB5V2
AK5 GND
AK6 IO215PPB5V2
AK7 GND
AK8 IO207NDB5V1
AK9 IO207PDB5V1
AK10 IO201NDB5V0
AK11 IO201PDB5V0
AK12 IO193NDB4V4
AK13 IO193PDB4V4
FG896
Pin Number
AGLE3000
Function
Package Pin Assignments
4-20 Revision 11
AK14 IO197PDB5V0
AK15 IO191NDB4V4
AK16 IO191PDB4V4
AK17 IO189NDB4V4
AK18 IO189PDB4V4
AK19 IO179PPB4V3
AK20 IO175NDB4V2
AK21 IO175PDB4V2
AK22 IO169NDB4V1
AK23 IO169PDB4V1
AK24 GND
AK25 IO167PPB4V1
AK26 GND
AK27 GDC2/IO156PPB4V0
AK28 GND
AK29 GND
B1 GND
B2 GND
B3 GAA2/IO309PPB7V4
B4 VCC
B5 IO14PPB0V1
B6 VCC
B7 IO07PPB0V0
B8 IO09PDB0V1
B9 IO15PPB0V1
B10 IO19NDB0V2
B11 IO19PDB0V2
B12 IO29NDB0V3
B13 IO29PDB0V3
B14 IO31PPB0V3
B15 IO37NDB0V4
B16 IO37PDB0V4
B17 IO41PDB1V0
B18 IO51NDB1V1
B19 IO59PDB1V2
FG896
Pin Number
AGLE3000
Function
B20 IO53PDB1V1
B21 IO53NDB1V1
B22 IO61NDB1V2
B23 IO61PDB1V2
B24 IO69NPB1V3
B25 VCC
B26 GBC0/IO79NPB1V4
B27 VCC
B28 IO64NPB1V2
B29 GND
B30 GND
C1 GND
C2 IO309NPB7V4
C3 VCC
C4 GAA0/IO00NPB0V0
C5 VCCIB0
C6 IO03PDB0V0
C7 IO03NDB0V0
C8 GAB1/IO01PDB0V0
C9 IO05PDB0V0
C10 IO15NPB0V1
C11 IO25NDB0V3
C12 IO25PDB0V3
C13 IO31NPB0V3
C14 IO27NDB0V3
C15 IO39NDB0V4
C16 IO39PDB0V4
C17 IO55PPB1V1
C18 IO51PDB1V1
C19 IO59NDB1V2
C20 IO63NDB1V2
C21 IO63PDB1V2
C22 IO67NDB1V3
C23 IO67PDB1V3
C24 IO75NDB1V4
FG896
Pin Number
AGLE3000
Function
C25 IO75PDB1V4
C26 VCCIB1
C27 IO64PPB1V2
C28 VCC
C29 GBA1/IO81PPB1V4
C30 GND
D1 IO303PPB7V3
D2 VCC
D3 IO305NPB7V3
D4 GND
D5 GAA1/IO00PPB0V0
D6 GAC1/IO02PDB0V0
D7 IO06NPB0V0
D8 GAB0/IO01NDB0V0
D9 IO05NDB0V0
D10 IO11NDB0V1
D11 IO11PDB0V1
D12 IO23NDB0V2
D13 IO23PDB0V2
D14 IO27PDB0V3
D15 IO40PDB0V4
D16 IO47NDB1V0
D17 IO47PDB1V0
D18 IO55NPB1V1
D19 IO65NDB1V3
D20 IO65PDB1V3
D21 IO71NDB1V3
D22 IO71PDB1V3
D23 IO73NDB1V4
D24 IO73PDB1V4
D25 IO74NDB1V4
D26 GBB0/IO80NPB1V4
D27 GND
D28 GBA0/IO81NPB1V4
D29 VCC
FG896
Pin Number
AGLE3000
Function
IGLOOe Low Power Flash FPGAs
Revision 11 4-21
D30 GBA2/IO82PPB2V0
E1 GND
E2 IO303NPB7V3
E3 VCCIB7
E4 IO305PPB7V3
E5 VCC
E6 GAC0/IO02NDB0V0
E7 VCCIB0
E8 IO06PPB0V0
E9 IO24NDB0V2
E10 IO24PDB0V2
E11 IO13NDB0V1
E12 IO13PDB0V1
E13 IO34NDB0V4
E14 IO34PDB0V4
E15 IO40NDB0V4
E16 IO49NDB1V1
E17 IO49PDB1V1
E18 IO50PDB1V1
E19 IO58PDB1V2
E20 IO60NDB1V2
E21 IO77PDB1V4
E22 IO68NDB1V3
E23 IO68PDB1V3
E24 VCCIB1
E25 IO74PDB1V4
E26 VCC
E27 GBB1/IO80PPB1V4
E28 VCCIB2
E29 IO82NPB2V0
E30 GND
F1 IO296PPB7V2
F2 VCC
F3 IO306PDB7V4
F4 IO297PDB7V2
FG896
Pin Number
AGLE3000
Function
F5 VMV7
F5 VMV7
F6 GND
F7 GNDQ
F8 IO12NDB0V1
F9 IO12PDB0V1
F10 IO10PDB0V1
F11 IO16PDB0V1
F12 IO22NDB0V2
F13 IO30NDB0V3
F14 IO30PDB0V3
F15 IO36PDB0V4
F16 IO48NDB1V0
F17 IO48PDB1V0
F18 IO50NDB1V1
F19 IO58NDB1V2
F20 IO60PDB1V2
F21 IO77NDB1V4
F22 IO72NDB1V3
F23 IO72PDB1V3
F24 GNDQ
F25 GND
F26 VMV2
F26 VMV2
F27 IO86PDB2V0
F28 IO92PDB2V1
F29 VCC
F30 IO100NPB2V2
G1 GND
G2 IO296NPB7V2
G3 IO306NDB7V4
G4 IO297NDB7V2
G5 VCCIB7
G6 GNDQ
G6 GNDQ
FG896
Pin Number
AGLE3000
Function
G7 VCC
G8 VMV0
G9 VCCIB0
G10 IO10NDB0V1
G11 IO16NDB0V1
G12 IO22PDB0V2
G13 IO26PPB0V3
G14 IO38NPB0V4
G15 IO36NDB0V4
G16 IO46NDB1V0
G17 IO46PDB1V0
G18 IO56NDB1V1
G19 IO56PDB1V1
G20 IO66NDB1V3
G21 IO66PDB1V3
G22 VCCIB1
G23 VMV1
G24 VCC
G25 GNDQ
G25 GNDQ
G26 VCCIB2
G27 IO86NDB2V0
G28 IO92NDB2V1
G29 IO100PPB2V2
G30 GND
H1 IO294PDB7V2
H2 IO294NDB7V2
H3 IO300NDB7V3
H4 IO300PDB7V3
H5 IO295PDB7V2
H6 IO299PDB7V3
H7 VCOMPLA
H8 GND
H9 IO08NDB0V0
H10 IO08PDB0V0
FG896
Pin Number
AGLE3000
Function
Package Pin Assignments
4-22 Revision 11
H11 IO18PDB0V2
H12 IO26NPB0V3
H13 IO28NDB0V3
H14 IO28PDB0V3
H15 IO38PPB0V4
H16 IO42NDB1V0
H17 IO52NDB1V1
H18 IO52PDB1V1
H19 IO62NDB1V2
H20 IO62PDB1V2
H21 IO70NDB1V3
H22 IO70PDB1V3
H23 GND
H24 VCOMPLB
H25 GBC2/IO84PDB2V0
H26 IO84NDB2V0
H27 IO96PDB2V1
H28 IO96NDB2V1
H29 IO89PDB2V0
H30 IO89NDB2V0
J1 IO290NDB7V2
J2 IO290PDB7V2
J3 IO302NDB7V3
J4 IO302PDB7V3
J5 IO295NDB7V2
J6 IO299NDB7V3
J7 VCCIB7
J8 VCCPLA
J9 VCC
J10 IO04NPB0V0
J11 IO18NDB0V2
J12 IO20NDB0V2
J13 IO20PDB0V2
J14 IO32NDB0V3
J15 IO32PDB0V3
FG896
Pin Number
AGLE3000
Function
J16 IO42PDB1V0
J17 IO44NDB1V0
J18 IO44PDB1V0
J19 IO54NDB1V1
J20 IO54PDB1V1
J21 IO76NPB1V4
J22 VCC
J23 VCCPLB
J24 VCCIB2
J25 IO90PDB2V1
J26 IO90NDB2V1
J27 GBB2/IO83PDB2V0
J28 IO83NDB2V0
J29 IO91PDB2V1
J30 IO91NDB2V1
K1 IO288NDB7V1
K2 IO288PDB7V1
K3 IO304NDB7V3
K4 IO304PDB7V3
K5 GAB2/IO308PDB7V4
K6 IO308NDB7V4
K7 IO301PDB7V3
K8 IO301NDB7V3
K9 GAC2/IO307PPB7V4
K10 VCC
K11 IO04PPB0V0
K12 VCCIB0
K13 VCCIB0
K14 VCCIB0
K15 VCCIB0
K16 VCCIB1
K17 VCCIB1
K18 VCCIB1
K19 VCCIB1
K20 IO76PPB1V4
FG896
Pin Number
AGLE3000
Function
K21 VCC
K22 IO78PPB1V4
K23 IO88NDB2V0
K24 IO88PDB2V0
K25 IO94PDB2V1
K26 IO94NDB2V1
K27 IO85PDB2V0
K28 IO85NDB2V0
K29 IO93PDB2V1
K30 IO93NDB2V1
L1 IO286NDB7V1
L2 IO286PDB7V1
L3 IO298NDB7V3
L4 IO298PDB7V3
L5 IO283PDB7V1
L6 IO291NDB7V2
L7 IO291PDB7V2
L8 IO293PDB7V2
L9 IO293NDB7V2
L10 IO307NPB7V4
L11 VCC
L12 VCC
L13 VCC
L14 VCC
L15 VCC
L16 VCC
L17 VCC
L18 VCC
L19 VCC
L20 VCC
L21 IO78NPB1V4
L22 IO104NPB2V2
L23 IO98NDB2V2
L24 IO98PDB2V2
L25 IO87PDB2V0
FG896
Pin Number
AGLE3000
Function
IGLOOe Low Power Flash FPGAs
Revision 11 4-23
L26 IO87NDB2V0
L27 IO97PDB2V1
L28 IO101PDB2V2
L29 IO103PDB2V2
L30 IO119NDB3V0
M1 IO282NDB7V1
M2 IO282PDB7V1
M3 IO292NDB7V2
M4 IO292PDB7V2
M5 IO283NDB7V1
M6 IO285PDB7V1
M7 IO287PDB7V1
M8 IO289PDB7V1
M9 IO289NDB7V1
M10 VCCIB7
M11 VCC
M12 GND
M13 GND
M14 GND
M15 GND
M16 GND
M17 GND
M18 GND
M19 GND
M20 VCC
M21 VCCIB2
M22 NC
M23 IO104PPB2V2
M24 IO102PDB2V2
M25 IO102NDB2V2
M26 IO95PDB2V1
M27 IO97NDB2V1
M28 IO101NDB2V2
M29 IO103NDB2V2
M30 IO119PDB3V0
FG896
Pin Number
AGLE3000
Function
N1 IO276PDB7V0
N2 IO278PDB7V0
N3 IO280PDB7V0
N4 IO284PDB7V1
N5 IO279PDB7V0
N6 IO285NDB7V1
N7 IO287NDB7V1
N8 IO281NDB7V0
N9 IO281PDB7V0
N10 VCCIB7
N11 VCC
N12 GND
N13 GND
N14 GND
N15 GND
N16 GND
N17 GND
N18 GND
N19 GND
N20 VCC
N21 VCCIB2
N22 IO106NDB2V3
N23 IO106PDB2V3
N24 IO108PDB2V3
N25 IO108NDB2V3
N26 IO95NDB2V1
N27 IO99NDB2V2
N28 IO99PDB2V2
N29 IO107PDB2V3
N30 IO107NDB2V3
P1 IO276NDB7V0
P2 IO278NDB7V0
P3 IO280NDB7V0
P4 IO284NDB7V1
P5 IO279NDB7V0
FG896
Pin Number
AGLE3000
Function
P6 GFC1/IO275PDB7V0
P7 GFC0/IO275NDB7V0
P8 IO277PDB7V0
P9 IO277NDB7V0
P10 VCCIB7
P11 VCC
P12 GND
P13 GND
P14 GND
P15 GND
P16 GND
P17 GND
P18 GND
P19 GND
P20 VCC
P21 VCCIB2
P22 GCC1/IO112PDB2V3
P23 IO110PDB2V3
P24 IO110NDB2V3
P25 IO109PPB2V3
P26 IO111NPB2V3
P27 IO105PDB2V2
P28 IO105NDB2V2
P29 GCC2/IO117PDB3V0
P30 IO117NDB3V0
R1 GFC2/IO270PDB6V4
R2 GFB1/IO274PPB7V0
R3 VCOMPLF
R4 GFA0/IO273NDB6V4
R5 GFB0/IO274NPB7V0
R6 IO271NDB6V4
R7 GFB2/IO271PDB6V4
R8 IO269PDB6V4
R9 IO269NDB6V4
R10 VCCIB7
FG896
Pin Number
AGLE3000
Function
Package Pin Assignments
4-24 Revision 11
R11 VCC
R12 GND
R13 GND
R14 GND
R15 GND
R16 GND
R17 GND
R18 GND
R19 GND
R20 VCC
R21 VCCIB2
R22 GCC0/IO112NDB2V3
R23 GCB2/IO116PDB3V0
R24 IO118PDB3V0
R25 IO111PPB2V3
R26 IO122PPB3V1
R27 GCA0/IO114NPB3V0
R28 VCOMPLC
R29 GCB1/IO113PPB2V3
R30 IO115NPB3V0
T1 IO270NDB6V4
T2 VCCPLF
T3 GFA2/IO272PPB6V4
T4 GFA1/IO273PDB6V4
T5 IO272NPB6V4
T6 IO267NDB6V4
T7 IO267PDB6V4
T8 IO265PDB6V3
T9 IO263PDB6V3
T10 VCCIB6
T11 VCC
T12 GND
T13 GND
T14 GND
T15 GND
FG896
Pin Number
AGLE3000
Function
T16 GND
T17 GND
T18 GND
T19 GND
T20 VCC
T21 VCCIB3
T22 IO109NPB2V3
T23 IO116NDB3V0
T24 IO118NDB3V0
T25 IO122NPB3V1
T26 GCA1/IO114PPB3V0
T27 GCB0/IO113NPB2V3
T28 GCA2/IO115PPB3V0
T29 VCCPLC
T30 IO121PDB3V0
U1 IO268PDB6V4
U2 IO264NDB6V3
U3 IO264PDB6V3
U4 IO258PDB6V3
U5 IO258NDB6V3
U6 IO257PPB6V2
U7 IO261PPB6V3
U8 IO265NDB6V3
U9 IO263NDB6V3
U10 VCCIB6
U11 VCC
U12 GND
U13 GND
U14 GND
U15 GND
U16 GND
U17 GND
U18 GND
U19 GND
U20 VCC
FG896
Pin Number
AGLE3000
Function
U21 VCCIB3
U22 IO120PDB3V0
U23 IO128PDB3V1
U24 IO124PDB3V1
U25 IO124NDB3V1
U26 IO126PDB3V1
U27 IO129PDB3V1
U28 IO127PDB3V1
U29 IO125PDB3V1
U30 IO121NDB3V0
V1 IO268NDB6V4
V2 IO262PDB6V3
V3 IO260PDB6V3
V4 IO252PDB6V2
V5 IO257NPB6V2
V6 IO261NPB6V3
V7 IO255PDB6V2
V8 IO259PDB6V3
V9 IO259NDB6V3
V10 VCCIB6
V11 VCC
V12 GND
V13 GND
V14 GND
V15 GND
V16 GND
V17 GND
V18 GND
V19 GND
V20 VCC
V21 VCCIB3
V22 IO120NDB3V0
V23 IO128NDB3V1
V24 IO132PDB3V2
V25 IO130PPB3V2
FG896
Pin Number
AGLE3000
Function
IGLOOe Low Power Flash FPGAs
Revision 11 4-25
V26 IO126NDB3V1
V27 IO129NDB3V1
V28 IO127NDB3V1
V29 IO125NDB3V1
V30 IO123PDB3V1
W1 IO266NDB6V4
W2 IO262NDB6V3
W3 IO260NDB6V3
W4 IO252NDB6V2
W5 IO251NDB6V2
W6 IO251PDB6V2
W7 IO255NDB6V2
W8 IO249PPB6V1
W9 IO253PDB6V2
W10 VCCIB6
W11 VCC
W12 GND
W13 GND
W14 GND
W15 GND
W16 GND
W17 GND
W18 GND
W19 GND
W20 VCC
W21 VCCIB3
W22 IO134PDB3V2
W23 IO138PDB3V3
W24 IO132NDB3V2
W25 IO136NPB3V2
W26 IO130NPB3V2
W27 IO141PDB3V3
W28 IO135PDB3V2
W29 IO131PDB3V2
W30 IO123NDB3V1
FG896
Pin Number
AGLE3000
Function
Y1 IO266PDB6V4
Y2 IO250PDB6V2
Y3 IO250NDB6V2
Y4 IO246PDB6V1
Y5 IO247NDB6V1
Y6 IO247PDB6V1
Y7 IO249NPB6V1
Y8 IO245PDB6V1
Y9 IO253NDB6V2
Y10 GEB0/IO235NPB6V0
Y11 VCC
Y12 VCC
Y13 VCC
Y14 VCC
Y15 VCC
Y16 VCC
Y17 VCC
Y18 VCC
Y19 VCC
Y20 VCC
Y21 IO142PPB3V3
Y22 IO134NDB3V2
Y23 IO138NDB3V3
Y24 IO140NDB3V3
Y25 IO140PDB3V3
Y26 IO136PPB3V2
Y27 IO141NDB3V3
Y28 IO135NDB3V2
Y29 IO131NDB3V2
Y30 IO133PDB3V2
FG896
Pin Number
AGLE3000
Function
Revision 11 5-1
5 – Datasheet Information
List of Changes
The following table lists critical changes that were made in each revision of the IGLOOe datasheet.
Revision Changes Page
Revision 11
(August 2012)
The drive strength, IOL, and IOH value for 3.3 V GTL and 2.5 V GTL was changed
from 25 mA to 20 mA in the following tables (SAR 37180):
Table 2-21 • Summary of Maximum and Minimum DC Input and Output Levels,
Table 2-25 • Summary of I/O Timing Characteristics—Software Default Settings
Table 2-26 • Summary of I/O Timing Characteristics—Software Default Settings
Table 2-28 • I/O Output Buffer Maximum Resistances1
Table 2-73 • Minimum and Maximum DC Input and Output Levels
Table 2-77 • Minimum and Maximum DC Input and Output Levels
Also added note stating "Output drive strength is below JEDEC specification." for Tables
2-25, 2-26, and 2-28.
Additionally, the IOL and IOH values for 3.3 V GTL+ and 2.5 V GTL+ were corrected
from 51 to 35 (for 3.3 V GTL+) and from 40 to 33 (for 2.5 V GTL+) in table Table 2-21
(SAR 39713).
2-20
2-25
2-26
2-28
2-51
2-53
In Table 2-117 • Minimum and Maximum DC Input and Output Levels, VIL and VIH
were revised so that the maximum is 3.6 V for all listed values of VCCI (SAR 37183).
2-65
The following sentence was removed from the "VMVx I/O Supply Voltage (quiet)"
section in the "Pin Descriptions and Packaging" section: "Within the package, the
VMV plane is decoupled from the simultaneous switching noise originating from the
output buffer VCCI domain" and replaced with “Within the package, the VMV plane
biases the input stage of the I/Os in the I/O banks” (SAR 38318). The datasheet
mentions that "VMV pins must be connected to the corresponding VCCI pins" for an
ESD enhancement.
3-1
Revision 10
(April 2012)
In Table 2-2 • Recommended Operating Conditions 1, VPUMP programming voltage
for operation was changed from "0 to 3.45 V" to "0 to 3.6 V" (SAR 32256). Values for
VCCPLL at 1.2–1.5 V DC core supply voltage were changed from "1.14 to 1.26 V" to
"1.14 to 1.575 V" (SAR 34701).
2-2
The tables in the "Quiescent Supply Current" section were updated with revised notes
on IDD. Table 2-8 • Power Supply State per Mode is new (SARs 34745, 36949).
2-7
tDOUT was corrected to tDIN in Figure 2-4 • Input Buffer Timing Model and Delays
(example) (SAR 37105).
2-17
"TBD" for 3.3 V LVCMOS Wide Range in Table 2-28 • I/O Output Buffer Maximum
Resistances1 and Table 2-30 • I/O Short Currents IOSH/IOSL was replaced by
"Same as regular 3.3 V LVCMOS" (SAR 33855). Values were also added for 1.2 V
LVCMOS and 1.2 V LVCMOS Wide Range.
2-28, 2-30
The formulas in the table notes for Table 2-29 • I/O Weak Pull-Up/Pull-Down
Resistances were corrected (SAR 34753).
2-29
IOSH and IOSL values were added to 3.3 V LVCMOS Wide Range Table 2-40 •
Minimum and Maximum DC Input and Output Levels, 1.2 V LVCMOS Table 2-64 •
Minimum and Maximum DC Input and Output Levels, and 1.2 V LVCMOS Wide
Range Table 2-68 • Minimum and Maximum DC Input and Output Levels (SAR
33855).
2-35,
2-47, 2-48
Datasheet Information
5-2 Revision 11
Revision 10
(continued)
Figure 2-48 • FIFO Read and Figure 2-49 • FIFO Write have been added (SAR
34844).
2-102
Values for FDDRIMAX and FDDOMAX were added to the tables in the Input DDR "Timing
Characteristics" section and Output DDR "Timing Characteristics" section (SAR
34802).
2-77,2-81
Minimum pulse width High and Low values were added to the tables in the "Global
Tree Timing Characteristics" section. The maximum frequency for global clock
parameter was removed from these tables because a frequency on the global is only
an indication of what the global network can do. There are other limiters such as the
SRAM, I/Os, and PLL. SmartTime software should be used to determine the design
frequency (SAR 36952).
2-89
Revision 9
(March 2012)
The "In-System Programming (ISP) and Security" section and "Security" section were
revised to clarify that although no existing security measures can give an absolute
guarantee, Microsemi FPGAs implement the best security available in the industry
(SAR 34665).
I, 1-2
The Y security option and Licensed DPA Logo were added to the "IGLOOe Ordering
Information" section. The trademarked Licensed DPA Logo identifies that a product is
covered by a DPA counter-measures license from Cryptography Research (SAR
34725).
III
The following sentence was removed from the "Advanced Architecture" section:
"In addition, extensive on-chip programming circuitry allows for rapid, single-voltage
(3.3 V) programming of IGLOOe devices via an IEEE 1532 JTAG interface" (SAR
34685).
1-3
The "Specifying I/O States During Programming" section is new (SAR 34696). 1-7
Values for VCCPLL at 1.5 V DC core supply voltage were changed from "1.4 to 1.6 V"
to "1.425 to 1.575 V" in Table 2-2 • Recommended Operating Conditions 1 (SAR
32292).
2-2
The reference to guidelines for global spines and VersaTile rows, given in the "Global
Clock Contribution—PCLOCK" section, was corrected to the "Spine Architecture"
section of the Global Resources chapter in the IGLOOe FPGA Fabric User's
Guide (SAR 34731).
2-13
The example in the paragraph above Table 2-31 • Duration of Short Circuit Event
before Failure was revised to change the maximum temperature from 110°C to
100°C, with an example of six months instead of three months (SAR 32287).
2-31
The notes regarding drive strength in the "Summary of I/O Timing Characteristics –
Default I/O Software Settings" section, "3.3 V LVCMOS Wide Range" section and "1.2
V LVCMOS Wide Range" section tables were revised for clarification. They now state
that the minimum drive strength for the default software configuration when run in
wide range is ±100 µA. The drive strength displayed in software is supported in
normal range only. For a detailed I/V curve, refer to the IBIS models (SAR 34766).
2-23,
2-35, 2-48
The AC Loading figures in the "Single-Ended I/O Characteristics" section were
updated to match tables in the "Summary of I/O Timing Characteristics – Default I/O
Software Settings" section (SAR 34886).
2-32
The following sentence was deleted from the "2.5 V LVCMOS" section (SAR 34793):
"It uses a 5 V–tolerant input buffer and push-pull output buffer."
2-38
Table 2-143 • IGLOOe CCC/PLL Specification and Table 2-144 • IGLOOe CCC/PLL
Specification were updated. A note was added to both tables indicating that when the
CCC/PLL core is generated by Microsemi core generator software, not all delay
values of the specified delay increments are available (SAR 34818).
2-91, 2-92
Revision Changes Page
IGLOOe Low Power Flash FPGAs
Revision 11 5-3
Revision 9
(continued)
The following figures were deleted. Reference was made to a new application note,
Simultaneous Read-Write Operations in Dual-Port SRAM for Flash-Based cSoCs and
FPGAs, which covers these cases in detail (SAR 34869).
Figure 2-46 • Write Access after Write onto Same Address
Figure 2-47 • Read Access after Write onto Same Address
Figure 2-48 • Write Access after Read onto Same Address
The port names in the SRAM "Timing Waveforms", SRAM "Timing Characteristics"
tables, Figure 2-50 • FIFO Reset, and the FIFO "Timing Characteristics" tables were
revised to ensure consistency with the software names (SAR 35749).
2-94,
2-97,
2-103,
2-105
The "Pin Descriptions and Packaging" chapter is new (SAR 34768). 3-1
Package names used in the "Package Pin Assignments" section were revised to
match standards given in Package Mechanical Drawings (SAR 34768)
4-1
July 2010 The versioning system for datasheets has been changed. Datasheets are assigned a
revision number that increments each time the datasheet is revised. The "IGLOOe
Device Status" table on page II indicates the status for each device in the device
family.
N/A
Revision Changes Page
Datasheet Information
5-4 Revision 11
Revision Changes Page
Revision 8 (Nov 2009) The version changed to v2.0 for IGLOOe datasheet chapters, indicating the
datasheet contains information based on final characterization.
N/A
Product Brief v2.0 The "Pro (Professional) I/O" section was revised to add "Hot-swappable and cold-
sparing I/Os."
I
The "Reprogrammable Flash Technology" section was revised to add "250 MHz
(1.5 V systems) and 160 MHz (1.2 V systems) System Performance."
I
Definitions of hot-swap and cold-sparing were added to the "Pro I/Os with
Advanced I/O Standards" section.
1-7
DC and Switching
Characteristics v2.0
3.3 V LVCMOS and 1.2 V LVCMOS Wide Range support was added to the
datasheet. This affects all tables that contained 3.3 V LVCMOS and 1.2 V
LVCMOS data.
N/A
IIL and IIH input leakage current information was added to all "Minimum and
Maximum DC Input and Output Levels" tables.
N/A
Values for 1.2 V wide range DC core supply voltage were added to Table 2-2 •
Recommended Operating Conditions 1. Table notes regarding 3.3 V wide range
and the core voltage required for programming were added to the table.
2-2
The data in Table 2-6 • Temperature and Voltage Derating Factors for Timing
Delays (1.5 V DC core supply voltage) and Table 2-7 • Temperature and Voltage
Derating Factors for Timing Delays (1.2 V DC core supply voltage) was revised.
2-6
3.3 V LVCMOS wide range data was included in Table 2-13 • Summary of I/O
Input Buffer Power (per pin) – Default I/O Software Settings and Table 2-14 •
Summary of I/O Output Buffer Power (per pin) – Default I/O Software Settings1.
Table notes were added in connection with this data.
2-9, 2-10
The temperature was revised from 110ºC to 100ºC in Table 2-31 • Duration of
Short Circuit Event before Failure and Table 2-33 • I/O Input Rise Time, Fall Time,
and Related I/O Reliability*.
2-31, 2-31
The tables in the "Overview of I/O Performance" section and "Detailed I/O DC
Characteristics" sectionwere revised to include 3.3 V LVCMOS and 1.2 V
LVCMOS wide range.
2-20, 2-28
Most tables were updated in the following sections, revising existing values and
adding information for 3.3 V and 1.2 V wide range:
"Single-Ended I/O Characteristics"
"Voltage-Referenced I/O Characteristics"
"Differential I/O Characteristics"
2-32,
2-51, 2-62
The value for "Delay range in block: fixed delay" was revised in Table 2-143 •
IGLOOe CCC/PLL Specification and Table 2-144 • IGLOOe CCC/PLL
Specification.
2-91, 2-92
The timing characteristics tables for RAM4K9 and RAM512X18 were updated,
including renaming of the address collision parameters.
2-97 –
2-100
Revision 7 (Apr 2009)
Product Brief v1.4
DC and Switching
Characteristics
Advance v0.4
The –F speed grade is no longer offered for IGLOOe devices and was removed
from the documentation. The speed grade column and note regarding –F speed
grade were removed from "IGLOOe Ordering Information". The "Speed Grade
and Temperature Grade Matrix" section was removed.
III, IV
IGLOOe Low Power Flash FPGAs
Revision 11 5-5
Revision 6 (Feb 2009)
Product Brief v1.3
The "Pro (Professional) I/O" section was revised to add two bullets regarding
wide range power supply voltage support.
I
3.0 V was added to the list of supported voltages in the "Pro I/Os with Advanced
I/O Standards" section. The "Wide Range I/O Support" section is new.
1-7
Revision 5 (Oct 2008)
Product Brief v1.2
The Quiescent Current values in Table 1 • IGLOOe Product Family table were
updated.
I
Revision 4 (Jul 2008)
Product Brief v1.1
DC and Switching
Characteristics
Advance v0.3
As a result of the Libero IDE v8.4 release, Actel now offers a wide range of core
voltage support. The document was updated to change 1.2 V / 1.5 V to 1.2 V to
1.5 V.
N/A
Revision 3 (Jun 2008)
DC and Switching
Characteristics
Advance v0.2
Tables have been updated to reflect default values in the software. The default
I/O capacitance is 5 pF. Tables have been updated to include the LVCMOS 1.2 V
I/O set.
DDR Tables have two additional data points added to reflect both edges for Input
DDR setup and hold time.
The power data table has been updated to match SmartPower data rather then
simulation values.
N/A
Table 2-144 • IGLOOe CCC/PLL Specification was updated to add VMV to the
VCCI parameter row and remove the word "output" from the parameter
description for VCCI. Table note 3 was added.
2-92
Table 2-2 • Recommended Operating Conditions 1 was updated to include the TJ
parameter. Table note 9 is new.
2-2
In Table 2-3 • Flash Programming Limits – Retention, Storage, and Operating
Temperature1, the maximum operating junction temperature was changed from
110° to 100°.
2-3
VMV was removed from Table 2-4 • Overshoot and Undershoot Limits 1, 3. The
title of the table was revised to remove "as measured on quiet I/Os." Table note 2
was revised to remove "estimated SSO density over cycles." Table note 3 was
deleted.
2-3
The "PLL Behavior at Brownout Condition" section is new. 2-4
Figure 2-2 • V2 Devices – I/O State as a Function of VCCI and VCC Voltage
Levels is new.
2-5
EQ 2 was updated. The temperature was changed to 100°C, and therefore the
end result changed.
2-6
The table notes for Table 2-9 • Quiescent Supply Current (IDD), IGLOOe
Flash*Freeze Mode*, Table 2-10 • Quiescent Supply Current (IDD)
Characteristics, IGLOOe Sleep Mode*, and Table 2-11 • Quiescent Supply
Current (IDD) Characteristics, IGLOOe Shutdown Mode* were updated to
remove VMV and include PDC6 and PDC7. VCCI and VJTAG were removed
from the statement about IDD in the table note for Table 2-11 • Quiescent Supply
Current (IDD) Characteristics, IGLOOe Shutdown Mode*.
2-7
Note 2 of Table 2-12 • Quiescent Supply Current (IDD) Characteristics, No
Flash*Freeze Mode1 was updated to include VCCPLL. Note 4 was updated to
include PDC6 and PDC7.
2-8
Table note 3 was added to Table 2-13 • Summary of I/O Input Buffer Power (per
pin) – Default I/O Software Settings and referenced for 1.2 V LVCMOS.
2-9
Revision Changes Page
Datasheet Information
5-6 Revision 11
Revision 3 (cont’d) Table 2-14 • Summary of I/O Output Buffer Power (per pin) – Default I/O Software
Settings1 was updated to change PDC3 to PDC7. The table notes were updated
to reflect that power was measured on VCCI. Table note 4 is new.
2-10
Table 2-16 • Different Components Contributing to the Static Power Consumption
in IGLOO Devices and Table 2-18 • Different Components Contributing to the
Static Power Consumption in IGLOO Devices were updated to add PDC6 and
PDC7, and to change the definition for PDC5 to bank quiescent power.
2-11, 2-12
A table subtitle was added for Table 2-18 • Different Components Contributing to
the Static Power Consumption in IGLOO Devices.
2-12
The "Total Static Power Consumption—PSTAT" section was updated to revise the
calculation of PSTAT
, including PDC6 and PDC7.
2-13
Footnote 1 was updated to include information about PAC13. The PLL
Contribution equation was changed from: PPLL = PAC13 + PAC14 * FCLKOUT to
PPLL = PDC4 + PAC13 * FCLKOUT.
2-14
The "Timing Model" was updated to be consistent with the revised timing
numbers.
2-16
In Table 2-22 • Summary of Maximum and Minimum DC Input Levels, TJ was
changed to TA in notes 1 and 2.
2-22
Table 2-22 • Summary of Maximum and Minimum DC Input Levels was updated
to included a hysteresis value for 1.2 V LVCMOS (Schmitt trigger mode).
2-22
All AC Loading figures for single-ended I/O standards were changed from
Datapaths at 35 pF to 5 pF.
N/A
The "1.2 V LVCMOS (JESD8-12A)" section is new. 2-47
Revision 2 (Jun 2008)
Product Brief v1.0
The product brief section of the datasheet was divided into two sections and
given a version number, starting at v1.0. The first section of the document
includes features, benefits, ordering information, and temperature and speed
grade offerings. The second section is a device family overview.
N/A
Revision 2 (cont’d)
Packaging v1.1
The naming conventions changed for the following pins in the "FG484" for the
A3GLE600:
Pin Number New Function Name
J19 IO45PPB2V1
K20 IO45NPB2V1
M2 IO114NPB6V1
N1 IO114PPB6V1
N4 GFC2/IO115PPB6V1
P3 IO115NPB6V1
4-6
Revision 1 (Mar 2008)
Product Brief rev. 1
The "Low Power" section was updated to change "1.2 V and 1.5 V Core Voltage"
to "1.2 V and 1.5 V Core and I/O Voltage." The text "(from 25 µW)" was removed
from "Low Power Active FPGA Operation."
1.2_V was added to the list of core and I/O voltages in the "Pro (Professional) I/O"
and "Pro I/Os with Advanced I/O Standards" section sections.
I
I, 1-7
Revision 0 (Jan 2008) This document was previously in datasheet Advance v0.4. As a result of moving
to the handbook format, Actel has restarted the version numbers. The new
version number is 51700096-001-0.
N/A
Revision Changes Page
IGLOOe Low Power Flash FPGAs
Revision 11 5-7
Advance v0.4
(December 2007)
The Table 1 • IGLOOe Product Family table was updated to change the maximum
number of user I/Os for AGLE3000.
I
The "IGLOOe FPGAs Package Sizes Dimensions" table table is new. Package
dimensions were removed from the "I/Os Per Package1" table. The number of
I/Os was updated for FG896.
II
A note regarding marking information was added to the "IGLOOe Ordering
Information" table.
III
Table 2-4 • IGLOOe CCC/PLL Specification and Table 2-5 • IGLOOe CCC/PLL
Specification were updated.
2-18,
2-19
The "During Flash*Freeze Mode" section was updated to include information
about the output of the I/O to the FPGA core.
2-60
Figure 2-38 • Flash*Freeze Mode Type 1 – Timing Diagram was updated to
modify the LSICC signal.
2-56
Table 2-32 • Flash*Freeze Pin Location in IGLOOe Family Packages (device-
independent) was updated for the FG896 package.
2-64
Figure 2-40 • Flash*Freeze Mode Type 2 – Timing Diagram was updated to
modify the LSICC Signal.
2-58
Information regarding calculation of the quiescent supply current was added to
the "Quiescent Supply Current" section.
3-6
Table 3-8 • Quiescent Supply Current (IDD), IGLOOe Flash*Freeze Mode† was
updated.
3-6
Table 3-9 • Quiescent Supply Current (IDD), IGLOOe Sleep Mode (VCC = 0 V)†
was updated.
3-6
Table 3-11 • Quiescent Supply Current, No IGLOOe Flash*Freeze Mode1 was
updated.
3-6
Table 3-99 • Minimum and Maximum DC Input and Output Levels was updated. 3-51
Table 3-136 • JTAG 1532 and Table 3-135 • JTAG 1532 were updated. 3-95
The "484-Pin FBGA" table for AGLE3000 is new. 4-11
The "896-Pin FBGA" package and table for AGLE3000 is new. 4-16
Advance v0.3
(September 2007)
Cortex-M1 device information was added to the Table 1 • IGLOOe Product Family
table, the "I/Os Per Package 1" table, "IGLOOe Ordering Information", and
"Temperature Grade Offerings".
I, II, III, IV
Advance v0.2 The words "ambient temperature" were added to the temperature range in the
"IGLOOe Ordering Information", "Temperature Grade Offerings", and "Speed
Grade and Temperature Grade Matrix" sections.
III, IV
The TJ parameter in Table 3-2 • Recommended Operating Conditions was
changed to TA, ambient temperature, and table notes 6–8 were added.
3-2
Revision Changes Page
Datasheet Information
5-8 Revision 11
Datasheet Categories
Categories
In order to provide the latest information to designers, some datasheet parameters are published before
data has been fully characterized from silicon devices. The data provided for a given device, as
highlighted in the "IGLOOe Device Status" table, is designated as either "Product Brief," "Advance,"
"Preliminary," or "Production." The definitions of these categories are as follows:
Product Brief
The product brief is a summarized version of a datasheet (advance or production) and contains general
product information. This document gives an overview of specific device and family information.
Advance
This version contains initial estimated information based on simulation, other products, devices, or speed
grades. This information can be used as estimates, but not for production. This label only applies to the
DC and Switching Characteristics chapter of the datasheet and will only be used when the data has not
been fully characterized.
Preliminary
The datasheet contains information based on simulation and/or initial characterization. The information is
believed to be correct, but changes are possible.
Production
This version contains information that is considered to be final.
Export Administration Regulations (EAR)
The products described in this document are subject to the Export Administration Regulations (EAR).
They could require an approved export license prior to export from the United States. An export includes
release of product or disclosure of technology to a foreign national inside or outside the United States.
Safety Critical, Life Support, and High-Reliability Applications
Policy
The products described in this advance status document may not have completed the Microsemi
qualification process. Products may be amended or enhanced during the product introduction and
qualification process, resulting in changes in device functionality or performance. It is the responsibility of
each customer to ensure the fitness of any product (but especially a new product) for a particular
purpose, including appropriateness for safety-critical, life-support, and other high-reliability applications.
Consult the Microsemi SoC Products Group Terms and Conditions for specific liability exclusions relating
to life-support applications. A reliability report covering all of the SoC Products Group’s products is
available at http://www.microsemi.com/soc/documents/ORT_Report.pdf. Microsemi also offers a variety
of enhanced qualification and lot acceptance screening procedures. Contact your local sales office for
additional reliability information.
51700096-11/8.12
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