BAS21
BAS21
General Purpose High Voltage Diode
Sourced from Process 1H. See MMBD1401 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
WIV Working In verse Voltage 250 V
IOAverage Re ctifie d Current 200 mA
IFDC Forward Current 600 mA
ifRecurrent Peak F orwa r d Current 700 mA
if(surge) Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond 1.0
2.0 A
A
Tstg Storage Temperature Range -55 to +150 °C
TJOperating Junction Tempe rature 150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
BAS21
PDTotal Dev i ce Dissipation
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junctio n to Am b i ent 357 °C/W
ã1998 Fairchild Semiconductor Corporation
SOT-23
3
1
2
29
3
12 2 NC
3
1
CONNECTION DIAGRAM
BAS21
Electrical Characteristics TA = 25°C unless otherwise noted
General Purpose High Voltage Diode
(continued)
Symbol Parameter Test Conditions Min Max Units
BVBreakdown Voltage IR = 100 µA250 V
IRReverse Voltage Leakage Current VR = 200 V
VR = 200 V, TA = 150 °C100
100 nA
µA
VFForward Voltage IF = 100 mA
IF = 200 mA 1.0
1.25 V
V
CODiode Capacitance VR = 0, f = 1.0 MHz 5.0 pF
TRR Reve rse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA,
RL = 100 Ω50 nS
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This datasheet contains the design specifications for
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