HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
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United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. Ho w ever, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K.
Cat. No. KLED1041E02
Feb. 2005 DN
Laser diode L9278-14
4.17 ± 0.1
(4 ×) 0.45
5.94
-0.1
+0.05
6.23
(90˚)
* The center of sleeve to the side surface
3.38
3.05 ± 0.5 *
8.8 ± 0.6
(13) 1.27 ± 0.1
4.04
6.35
5.6
2.0 CASE
CATHODE (LD)
ANODE (PD)
CATHODE (PD)
ANODE (LD)
(OPTICAL REFERENCE
PLANE)
5.6
2.92 ± 0.05
1.25
2
KLEDA0079EB
■ Dimensional outline (unit: mm, tolerance unless otherwise noted: ±0.2)
■ Eye diagram
Bit rate=2.5 Gbps, NRZ, PN=31,
Bias current=Ith, Modulated current=20 mApp Bit rate=2.5 Gbps, NRZ, PN=31
1.866 GHz, 4th Bessel filter used