THYRISTOR MODULE PK(PD,PE,KK)25GB UL;E76102 M Power Thyristor/Diode Module PK25GB series are designed for various rectifier circuits and power controls. For your circuit application. following internal connections and wide voltage ratings up to 800V are available. and electrically isolated mounting base make your mechanical design easy. Internal Configurations di/dt 100 A/s dv/dt 500V/s ~ 16.5 K2 G2 A1K2 2 K1 G1 A2 3 A1K2 2 2 2 1 K2 G2 110TAB K2 G2 1 K1 G1 A2 K2 1 K1 G1 A2 A1 PD 3-M5 K1 A2 PE K2 3 - 23 1 K2 PK A1K2 + 23 K2 G2 1 K2 1 21 3 30MAX Applications Various rectifiers AC/DC motor drives Heater controls Light dimmers Static switches 2- 6.5 2 K1 G1 IT(AV) 25A, IT(RMS) 39A, ITSM 500A 3 13 26MAX 93.5MAX 80 UnitA KK Maximum Ratings Ratings Symbol Item PK25GB40 PD25GB40 KK25GB40 PE25GB40 VRRM Repetitive Peak Reverse Voltage 400 PK25GB80 PD25GB80 KK25GB80 PE25GB80 800 Unit V VRSM Non-Repetitive Peak Reverse Voltage 480 960 V VDRM Repetitive Peak Off-State Voltage 400 800 V Symbol Item ITAV Average On-State Current Conditions Single phase, half wave, 180conduction, Tc97 ITRMS R.M.S. On-State Current Single phase, half wave, 180conduction, Tc97 ITSM Surge On-State Current 1 2cycle, I t Value for one cycle of surge current It 2 PGM PGAV 2 50Hz/60Hz, peak Value, non-repetitive Peak Gate Power Dissipation Ratings Unit 25 A 39 A 450/500 1000 A A2S 10 W Average Gate Power Dissipation 1 W IFGM Peak Gate Current 3 A VFGM Peak Gate Voltage (Forward) 10 V VRGM Peak Gate Voltage (Rsverse) 5 V didt Critical Rate of Rise of On-State Current VISO Isolation Breakdown Voltage (R.M.S.) Tj Operating Junction Temperature Tstg IG100mATj25VD12VDRMdIG/dt0.1A/s A.C.1minute Storage Temperature Mounting Torque 100 A/s 2500 V -40 to 125 -40 to 125 MountingM5 Recommended Value 2.5-3.925-40 4.748 TerminalM5 Recommended Value 1.5-2.515-25 2.728 Nm fB 170 g Ratings Unit Mass Electrical Characteristics Symbol Item IDRM Repetitive Peak Off-State Current, max. Conditions at VDRM, single phase, half wave, Tj125 4 mA 4 mA IRRM Repetitive Peak Reverse Current, max. at VDRM, single phase, half wave, Tj125 VTM Peak On-State Voltage, max. On-State Current 75A, Tj125 Inst. measurement 1.50 V 50/3 0.25 mA/V IGTVGT Gate Trigger Current/Voltage, max. Tj25IT1AVD6V VGD Non-Trigger Gate, Voltage. min. Tj125VD12VDRM Turn On Time, max. IT25AIG100mATj25VD12VDRMdIG/dt0.1A/s Critical Rate of Rise of Off-State Voltage, min. Tj125, VD23VDRM, Exponential wave. IH Holding Current, typ. Tj25 IL Lutching Current, typ. Tj25 100 mA Junction to case 0.80 /W tgt dvdt Rthj-cThermal Impedance, max. 10 V s 500 V/s 50 mA markThyristor and Diode part. No markThyristor part SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com http://store.iiic.cc/ ;; PK(PD,PE,KK)25GB Gate Characteristics Pe Po ak G we a r te 10 W Av er ag e Ga te Po we r Tj125 Average On-State Current Vs Maximum Allowable Case TemperatureSingle phase half wave Per one element 2 120 90 60 30 180 2 360 : Conduction Angle 360 D.C. : Conduction Angle 60 120 30 90 180 Transient Thermal Impedance j-c/W 60Hz 50Hz Junction to case Per one element - Timecycles IdAr.m.s. W3 B6 Rth:1.0/W Rth:0.8/W Rth:0.6/W Rth:0.4/W Rth:0.1/W B2 W1 Output CurrentA Ambient Temperature Total Power DissipationW WBidirectional connection Allowable Case Temperature Output Current Transient Thermal Impedance Per One Element = start Surge On-State CurrentA Average On-State CurrentA Surge On-State Current Rating Non-Repetitive D.C. Average On-State CurrentA Total Power DissipationW Average On-State Current Vs Power Dissipation Single phase half wave On-State VoltageV Gate CurrentmA Per one element Power DissipationW Maximum Gate Voltage that will not trigger any unit0.25V - 25 -30 125 On-State Voltage max - BTwo Pluse bridge connection BSix pulse bridge connection Three phase bidiretional connection Rth:1.0/W Rth:0.8/W Rth:0.6/W Rth:0.1/W Rth:0.4/W Rth:1.0/W Rth:0.8/W Rth:0.6/W Rth:0.4/W Rth:0.1/W - Time tsec IdAav. IdAav. IdAr.m.s. Ambient Temperature Ambient Temperature http://store.iiic.cc/ Allowable Case Temperature 1W Allowable Case Temperature Gate VoltageV On-State CurrentA Peak Forward Gate Voltage10V Peak Gate Current3A