
DF005M - DF10M
DF005M - DF10M
1.5 Ampere Bridge Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).
Electrical Characteristics TA = 25°C unless otherwise noted
Discrete POWER & Signal
Technologies
ã1998 Fairchild Semiconductor Corporation
Features
•Surge overload rating: 50 amperes
peak.
•Glass passivated junction.
•Low leakage.
Parameter Device Units
005M 01M 02M 04M 06M 08M 10M
Peak Repeti tive Reverse Voltage 50 100 200 400 600 800 1000 V
Maximum RMS B ri dge I nput Voltage 35 70 140 280 420 560 700 V
DC Reverse Voltage (Rated VR)50 100 200 400 600 800 1000 V
Maximum Revers e Leakage,
total bri dge @ rat ed VRTA = 25°C
TA = 125°C5.0
500 µA
µA
Maximum Forward Volt age Drop,
per bridge @ 1.0 A 1.1 V
I2t rating f or fusing t < 8.35 ms 10 A2Sec
Typical J unction Capaci t ance, per leg
VR = 4.0 V, f = 1.0 MHz 25 pF
Symbol Parameter Value Units
IOAverage Rectified Current
@ TA = 40°C1.5 A
if(surge) Peak Forward Surge Current
8.3 ms s ingle half-sine-wave
Superim posed on rated load (JEDE C method) 50 A
PDTotal Device Dissipation
Derate above 25°C3.1
25 W
mW/°C
RθJA Thermal Resistanc e, J unc tion to Ambient,** per leg 40 °C/W
Tstg Storage Temperature Range -55 to +150 °C
TJOperating Junction Temperature -55 to +150 °C
DIP
+
0.315 (8.001)
0.285 (7.239)
0.255 (6.477)
0.245 (6.223)
0.075 (1.905)
0.055 (1.397)
0.335 (8.509)
0.320 (8.128)
0.350 (8.890)
0.300 (7.620)
0.185 (4.699)**
0.150 (3.810)**
0.130 (3.302)*
0.120 (3.408)*
0.205 (5.207)
0.195 (4.953)
0.045 (1.143)
0.035 (0.889)
0.022 (0.559)
0.018 (0.457)
LOW PROFILE ALS O AVAILABLE
BODY - - 0.102 (2.591)*
0. 095 (2. 4 13)*
LEAD - - 0.080 (2.032)**
0. 050 (1. 2 70)**