UNISONIC TECHNOLOGIES CO., LTD
2SC2688 NPN EPITAXIAL SILICON TRANSISTOR
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Copyright © 2005 Unisonic Technologies Co., Ltd QW-R204-023,A
NPN SILICON TRANSISTOR
DESCRIPTION
The UTC 2SC2688 is designed for use in Color TV chroma
output circuits.
FEATURES
* High Electrostatic-Discharge-Resistance.
ESDR: 1000V TYP. (E-B reverse bias, C=2300pF)
* Low Cre, High fT
Cre ≤3.0 pF (VCB=30V)
fT ≥50MHz (VCE=30V, IE=-10mA)
TO-126
1
*Pb-free plating product number: 2SC2688L
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Plating Package 1 2 3
Packing
2SC2688-x-T60-A-K 2SC2688L-x-T60-A-K TO-126 E C B Bulk
2SC2688L-x-T60-A-K
(1)Packing Type
(3)Package Type
(4)Rank
(5)Lead Plating
(2)Pin Assignment
(1) K: Bulk
(2) refer to Pin Assignment
(3) T60: TO-126
(4) x: refer to Classification of h
FE
(5) L: Lead Free Plating, Blank: Pb/Sn
2SC2688 NPN EPITAXIAL SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATING
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 300 V
Collector to Emitter Voltage VCEO 300 V
Emitter to Base Voltage VEBO 5.0 V
Collector Current IC 200 mA
Ta=25℃ 1.25 W
Total Power Dissipation TC=25℃ PD 10 W
Junction Temperature TJ 150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Saturation Voltage VCE(SAT) I
C=20mA, IB=5.0mA 1.5 V
Collector Cutoff Current ICBO V
CB=200V, IE=0 100 nA
Emitter Cutoff Current IEBO V
EB=5.0V, IC=0 100 nA
DC Current Gain hFE V
CE=10V, IC=10mA 40 80 250
Gain Bandwidth Product fT V
CE=30V, IE=-10mA 50 80 MHz
Feedback Capacitance Cre V
CB=30V, IE=0, f=1.0MHz 3 pF
Note 1. * Pulsed PW ≤ 350µs, Duty Cycle ≤ 2%
CLASSIFICATION OF hFE
Rank N M L K
Range 40 ~ 80 60 ~ 120 100 ~ 200 16 ~ 250
2SC2688 NPN EPITAXIAL SILICON TRANSISTOR
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BURNOUT TEST CIRCUIT BY DISCHARGE OF CAPACITOR
V
D
C=2 300pF
T.U.T
Open Collector
SW.
TEST CONDITION
1. E-B reverse bias
2.C=2300pF
3. Apply on shot pulse to T.U.T.
(Transistor Under the Test) by SW.
JUDGEMENT
Reject; BV
EBO
waveform defect
As a result if T.U.T. is not rejected,
apply higher voltage to capacitor and
test again.
2SC2688 NPN EPITAXIAL SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS (Ta=25℃)
0 25 50 75 100 125 150
Ambient Temperature, Ta (℃)
2
4
6
8
10
Total Power Dissipation Vs.
Ambinet Temperature
Total Power Dissipation, P
D
(W)
0 25 50 75 100 125 150
Ambient Temperature, Ta (℃)
0.25
0.5
0.75
1.0
1.25
Total Power Dissipation Vs.
Ambinet Temperature
Total Power Dissipation, P
D
(W)
175
Infinite Heat Sink
Free Air
1.5
024681012
Collector TO Emitter Voltage, V
CE
(V)
2
4
6
10
12
Collector Current vs.
Collector to Emitter Voltage
Collector Current, I
C
(mA)
14
14
8
I
B
=50µA
100µA
150µA
050100150
Collector TO Emitter Voltage, V
CE
(V)
0.5
1.0
2.0
2.5
Collector Current vs.
Collector to Emitter Voltage
Collector Current, I
C
(mA)
3.0
1.5
I
B
=10µA
30µA
20µA
00.40.81.2
Base to Emitter Voltage, VBE (V)
10
20
50
60
Collector Current vs. Base to
Emitter Voltage
Collector Current, IC (mA)
70
30
VCE=10V
0.2 0.6 1.0 1.4
40
0.1 10 100
Collector Current, IC (mA)
1
5
100
DC Current Gain vs. Collector
Current
DC Current Gain, hFE
10
0.5 5 50 1000
50
1500
200
VCE=10V
2SC2688 NPN EPITAXIAL SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
0.1 10 100
Collector Current, I
C
(mA)
0.01
0.05
1.0
Base And Collector Saturation
Voltage vs. Collector Current
Base Saturation Voltage, V
BE (SAT)
(V)
Collector Saturation Voltage, V
CE (SAT)
(V)
0.1
0.5 5 50 1000
0.5
1500
V
CE(SAT )
5.0
10.0
V
BE (SAT)
I
C
=10·I
B
-1 -10
Emitter Current, I
E
(mA)
10
200
Gain Banddwidth Product Vs.
Emitter Current
Gain Bandwidth Product, f
T
(MHz)
50
-5 -100
100
-50
V
CE
=30V
110
Collector to Base Voltage, V
CB
(V)
1
Feedback Capacitance
vs.Collector to Base Voltage
Feedback Capacitance, C
re
(pF)
5
5100
10
50
I
E
=0
f=1MHz
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
