TPD1030F - Toshiba America Electronic Components, Inc.

TPD1030F

2011-12-21

Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

TPD1030F

2-IN-1 Low-Side Switch for Motor, Solenoid and Lamp Drive

The TPD1030F is a 2-IN-1 low-side switch.

The IC has a vertical MOSFET output which can be directly

driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC

is equipped with intelligent self-protection functions.

Features

• Two built-in power IC chips with a new structure combining a

control block and a vertical power MOSFET (L2-π-MOS) on

each chip.

• Can directly drive a power load from a CMOS or TTL logic.

• Built-in protection circuits against overvoltage (active clamp),

overtemperature (thermal shutdown), and overcurrent (current limiter).

• Low Drain-Source ON-resistance: RDS (ON) = 0.6 Ω (max) (@VIN = 5 V, ID = 0.5 A, Tch = 25°C)

• Low Leakage Current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 30 V, Tch = 25°C)

• Low Input Current: IIN = 350 μA (max) (@VIN = 5 V, Tch = −40 to 110°C)

• 8-pin SOP package with embossed-tape packing.

Pin Assignment (top view) Marking

Note: Due to its MOS structure, this product is sensitive to static electricity.

Weight: 0.08 g (typ.)

SOURCE1

IN1

SOURCE2

DRAIN1

DRAIN2

IN2 4 5 DRAIN2

TPD1030

FLot No.

Note

Part No. (or abbreviation code)

Note : A line under a Lot No. identifies the indication of product Labels

[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is Directive 2002/95/EC of the European Parliament and

of the Council of 27 January 2003 on the restriction of the use of

certainhazardous substances in electrical and electronic equipment.

TPD1030F

2011-12-21

Block Diagram

Pin Description

Pin No. Symbol Pin Description

1 SOURCE1 Source pin 1

2 IN1

Input pin 1

This pin is connected to a pull-down resistor internally, so that even when input wiring is

open-circuited, output can never be turned on inadvertently.

3 SOURCE2 Source pin 2

4 IN2

Input pin 2

This pin is connected to a pull-down resistor internally, so that even when input wiring is

open-circuited, output can never be turned on inadvertently.

5, 6 DRAIN2 Drain pin 2

Drain current is limited (by current limiter) if it exceeds 0.7 A (min) in order to protect the IC.

7, 8 DRAIN1 Drain pin 1

Drain current is limited (by current limiter) if it exceeds 0.7 A (min) in order to protect the IC.

DRAIN1

IN1

Overcurrent Detection

/Protection

Overtemperature Detection

/Protection

SOURCE1

DRAIN1

DRAIN2

IN2

Overcurrent Detection

/Protection

Overtemperature Detection

/Protection

SOURCE2

DRAIN2

TPD1030F

2011-12-21

Timing Chart

Note1: The overheating detector circuits feature hysteresis. After overheating is detected, normal operation is

restored only when the channel temperature falls by the hysteresis amount (5°C typ.) in relation to the

overheating detection temperature.

Truth Table

IN VOUT Mode

L H

H L

Normal

L H

H H

Overcurrent

L H

H H

Overtemperature

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDS (DC) 40 V

Drain current ID Internally Limited A

Input voltage VIN −0.3 to 7 V

Power dissipation (t = 10 s) PD 2.0

(Note2) W

Single pulse active clamp capability

(Note 3) EAS 10 mJ

Active clamp current IAR 1 A

Repetitive active clamp capability

(Note 4) EAR 0.2 mJ

Operating temperature Topr −40 to 110 °C

Channel temperature Tch 150 °C

Storage temperature Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Overcurrent Protection

Input Signal

Output Current

Current limiting

(limiter)

Overtemperature

protection (Note1)

Overtemperature Protection

TPD1030F

2011-12-21

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to

ambient (t = 10 s) (Note2) Rth (ch-a) 62.5 °C/W

Note 2: Drive operation: Mounted on glass epoxy board [25.4mm × 25.4mm × 0.8mm]

(with the two devices operating)

Note 3: Active clamp capability (single pulse) test condition

VDD = 25 V, Starting Tch = 25°C, L = 10 mH, IAR = 1 A, RG = 25 Ω

Note 4: Repetitive rating, pulse width limited by maximum channel temperature.

Electrical Characteristics

Characteristics Symbol

Test

Circuit Test Condition Min Typ. Max Unit

Drain-source clamp voltage V (CL) DSS ⎯ T

ch=-40 to 110℃VIN = 0 V,

ID=1mA 40 ⎯ 60 V

Tch=25℃ 1.0 ⎯ 2.8

Input threshold voltage Vth ⎯

Tch=-40 to 110℃

VDS = 13 V,

ID=10mA 0.9 ⎯ 3.0

Tch=25℃ ⎯ 3 ⎯ 7

Protective circuit operation

input voltage range VIN (opr) ⎯

Tch=-40 to 110℃

⎯ 3.5 ⎯ 7

Tch=25℃ ⎯ ⎯ 10

Drain cut-off current IDSS ⎯

Tch=-40 to 110℃

VIN = 0 V, VDS=30V

⎯ ⎯ 100

μA

IIN (1) ⎯ Tch=25℃ VIN = 5 V, at normal

operation ⎯ ⎯ 300

Input current

IIN (2) ⎯ Tch=-40 to 110℃

VIN = 5 V, when

overcurrent protective

circuit is actuated

⎯ ⎯ 350

μA

Tch=25℃ ⎯ 0.44 0.6

Drain-source on resistance RDS (ON) ⎯

Tch=-40 to 110℃

VIN = 5 V,

ID = 0.5 A ⎯ ⎯ 0.9

Overtemperature protection TS ⎯ ⎯ VIN = 5 V 150 160 ⎯ °C

Tch=25℃ 1 1.8 ⎯

Overcurrent protection IS ⎯

Tch=-40 to 110℃

VIN = 5 V

0.7 ⎯ ⎯

Tch=25℃ ⎯ ⎯ 30

tON

Tch=-40 to 110℃⎯ ⎯ 60

Tch=25℃ ⎯ ⎯ 60

Switching time

tOFF

Tch=-40 to 110℃

VDD = 13 V, VIN = 0V/5

V, ID = 0.5 A

⎯ ⎯ 90

μs

Source-drain diode forward

voltage VDSF ⎯ Tch=25℃ I

F = 1 A, VIN = 0 V ⎯ ⎯ 1.7 V

Test Circuit 1

Switching time measuring circuit

Test Circuit Measured Waveforms

VIN Waveform

VOUT Waveform

5 V

90%

tON

10%

90%

tOFF

13 V

To be set so that

ID = 0.5 A.

13 V

P.G

TPD1030F

IN OUT GND

TPD1030F

2011-12-21

Package Dimensions

Weight: 0.08 g (typ.)

TPD1030F

2011-12-21

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for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the

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