APT10DC120HJ
APT10DC120HJ – Rev 1 October 2012
www.microsemi.com 1-4
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VR Maximum DC reverse Voltage
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
IF(AV) Maximum Average Forward Current Duty cycle = 50% TC = 100°C 10
IFSM Non-Repetitive Forward Surge Current 10 µs TC = 25°C 250 A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
ISOTOP
VRRM = 1200V
IC = 10A @ Tc = 100°C
Application
Switch mode power supplies rectifier
Induction heating
Welding equipment
High speed rectifiers
Features
SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
ISOTOP® SiC Diode
Full Bridge Power Module
~
~
-
+
APT10DC120HJ
APT10DC120HJ – Rev 1 October 2012
www.microsemi.com 2-4
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 1.6 1.8
VF Diode Forward Voltage IF = 10A Tj = 175°C 2.3 3 V
Tj = 25°C 32 200
IRM Maximum Reverse Leakage Current VR = 1200V Tj = 175°C 56 1000 µA
QC Total Capacitive Charge IF = 10A, VR = 600V
di/dt =500A/µs 40 nC
f = 1MHz, VR = 200V 96
C Total Capacitance f = 1MHz, VR = 400V 69 pF
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
RthJC Junction to Case Thermal resistance 1.65
RthJA Junction to Ambient 20 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 V
TJ,TSTG Storage Temperature Range -55 175
TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
3.30 (.130)
4.57 (.180)
APT10DC120HJ
APT10DC120HJ – Rev 1 October 2012
www.microsemi.com 3-4
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Forward Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
4
8
12
16
20
0 0.5 1 1.5 2 2.5 3 3.5
V
F
Forward Voltage (V)
I
F
Forward Current (A)
Reverse Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
25
50
75
100
400 600 800 1000 1200 1400 1600
V
R
Reverse Voltage (V)
I
R
Reverse Current (µA)
Capacitance vs.Reverse Voltage
0
100
200
300
400
500
600
700
1 10 100 1000
VR Reverse Voltage
C, Capacitance (pF)
ISOTOP® is a registered trademark of ST Microelectronics NV
APT10DC120HJ
APT10DC120HJ – Rev 1 October 2012
www.microsemi.com 4-4
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