SOP8501
Rev.0 I Page 1 of 5 I www.onsemi.com
Features
•High breakdown voltage. (VCEO≥400V)
•Excellent hFE linearlity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions PNP NPN Unit
Collector-to-Base Voltage VCBO --400 400 V
Collector-to-Emitter Voltage VCEO --400 400 V
Emitter-to-Base Voltage VEBO --5 5 V
Collector Current IC--1 0.2 A
Collector Current (Pulse) ICP --2 0.4 A
Collector Dissipation PC
Mounted on a ceramic board (2000mm
2
✕0.8mm) 1unit
1.3 W
PT
Mounted on a ceramic board (2000mm
2
✕0.8mm) 1unit
1.6 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
[PNP]
Collector Cutoff Current ICBO VCB=--300V, IE=0 --1.0 µA
Emitter Cutoff Current IEBO VEB=--4V, IC=0 --1.0 µA
DC Current Gain hFE VCE=--10V, IC=--100mA 40 200
Gain-Bandwidth Product fTVCE=--10V, IC=--50mA 50 MHz
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--200mA, IB=--20mA --1.0 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=--200mA, IB=--20mA --1.0 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10µA, IE=0 --400 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞--400 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10µA, IC=0 --5 V
Output Capacitance Cob VCB=--30V, f=1MHz 12 pF
Turn-ON Time ton See specified Test Circuit. 0.25 µs
Storage Time tstg See specified Test Circuit. 3.0 µs
Fall T ime tfSee specified Test Circuit 0.3 µs
Continued on next page.
Ordering number : ENN8007
SOP8501 PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
SOP8501/D
SOP8501
Rev.0 I Page 2 of 5 I www.onsemi.com
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
[NPN]
Collector Cutoff Current ICBO VCB=300V, IE=0 1.0 µA
Emitter Cutoff Current IEBO VEB=4V, IC=0 1.0 µA
DC Current Gain hFE VCE=10V, IC=50mA 60 200
Gain-Bandwidth Product fTVCE=30V, IC=10mA 70 MHz
Collector-to-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA 0.6 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=50mA, IB=5mA 1.0 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 400 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞400 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 5 V
Output Capacitance Cob VCB=30V, f=1MHz 4 pF
Reverse Transfer Capacitance Cre VCB=30V, f=1MHz 3 pF
Turn-ON Time ton See specified Test Circuit. 0.25 µs
Turn-OFF Time toff See specified Test Circuit. 5.0 µs
Package Dimensions Electrical Connection
unit : mm
2233
Switching Time Test Circuit
[PNP] [NPN]
87 65
12 34
1 : Emitter1
2 : Base1
3 : Emitter2
4 : Base2
5 : Collector2
6 : Collector2
7 : Collector1
8 : Collector1
Top view
1 : Emitter1
2 : Base1
3 : Emitter2
4 : Base2
5 : Collector2
6 : Collector2
7 : Collector1
8 : Collector1
SANYO : SOP8
14
58
4.4
0.3
6.0
0.2
5.0
0.595 1.27
1.5
0.1 1.8max
0.43
VR
RL
VCC= --150V
VBE=5V
10IB1= --10IB2=IC= --200mA
IC=200m RL=750Ω, RB=50Ω
++
INPUT OUTPUT
RB
100µF470µF
PW=20µs
IB1
D.C.≤1%
IB2
50Ω
VR
RL
VCC=150V
VBE= --1V
10IB1= --10IB2=IC=50mA
IC=50m RL=3kΩ, RB=200Ω
++
INPUT OUTPUT
RB
100µF470µF
PW=20µs
IB1
D.C.≤1%
IB2
50Ω
SOP8501
Rev.0 I Page 3 of 5 I www.onsemi.com
VCE= --10V
Ta=75
°
C
--25°C
--1.0
--0.8
--0.6
--0.2
--0.4
00--0.2 --0.4 --0.6 --0.8 --1.4--1.2--1.0
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
ITR04587
[PNP]
25°C
20
00 0.2 0.4 0.6 1.21.00.8 1.4
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
ITR04446
120
40
60
80
100
VCE=10V
Ta=70°C
25°
C
--30°
C
[NPN]
--10 --100
23 535 235777 --1000
--1.0
7
5
3
3
2
2
7
5
--0.1
Ta=
--25°C
25°C
75
°
C
VCE(sat) -- IC
Collector Current, IC -- mA
ITR04597
IC / IB=10
VBE(sat) -- IC
Collector Current, IC -- mA
--1.0
--0.1
--10 --100 --1000
Ta= --25
°
C
75°C
3
2
3
2
7
5
7
535 2357 23 57723
IC / IB=10
ITR04599
25°C
[PNP]
[PNP]
[NPN]
[NPN]
ITR04452
VCE(sat) -- IC
Collector Current, IC -- mA
7
5
2
3
2
7
5
5
3
1.0
0.1
2735 272357
1.0 10 100
ITR04450
IC / IB=10
Ta=70
°C
25
°
C, --30
°
C
VBE(sat) -- IC
Collector Current, IC -- mA
3
5
5
3
2
7
7
1.0
2735 372 2357
1.0 10 100
IC / IB=10
70°C
25°C
Ta= --30°C
Ta=75°C
--25°C
hFE -- IC
Collector Current, IC -- mA
DC Current Gain, hFE
VCE= --10V
ITR04589
100
7
7
5
3
5
3
2
3
2
10
7775 --1000--10 332532325
--100
[PNP]
25°C
5
100
10
7
5
7
3
2
3
2
5
1.0 10 100
hFE -- IC
Collector Current, IC -- mA
DC Current Gain, hFE
ITR04448
Ta=70°C
25°
C
--30
°
C
23 577723 352
VCE=10V
[NPN]
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
SOP8501
Rev.0 I Page 4 of 5 I www.onsemi.com
VCE= --10V
fT -- IC
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- mA
3
100
10
2
7
5
7
5
3
2
7532 25353
--10 7--100 ITR04591
[PNP]
[NPN]
Switching Time, SW Time -- µs
5
0.1
1.0
7
10
2
3
5
7
3
7
2
5
27357 2 5
35
10 100
3
SW Time -- IC
Collector Current, IC -- mA ITR04454
ton
tf
tstg
VCC= --150V
10IB1= --10IB2=IC
2232357
--10 35 57--100 7--1000
SW Time -- IC
Switching Time, SW Time -- µs
Collector Current, IC -- mA
2
3
7
7
5
2
3
5
10
7
1.0
0.1
ITR04595
VCC= --150V
10IB1= --10IB2=IC
tstg
ton
tf
[PNP]
[NPN][PNP]
Cob -- VCB
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
3
2
3
2
7
5
7
5
3
10
100
--1.0 37732--10 227--100
55
ITR04593
f=1MHz
[PNP]
[PNP / NPN]
Total Dissipation, PT -- W
PT -- Ta
Ambient Temperature, Ta -- °C
[PNP / NPN]
Collector Dissipation, PC -- W
PC -- Ta
Ambient Temperature, Ta -- °C
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
A S O
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
A S O
0
1.8
020 6040 80 120100 160140
IT07328
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
3
--1.0
--0.1
--0.01
7
5
3
2
7
5
2
7
5
3
2
3
2
7
--0.1 --1.0 --10
23 5723 5 7
--100
23 5 723 5
020406080100 120 140 160
0.6
0.4
0.2
0
1.2
1.0
0.8
1.3
1.4
1.6
--0.001
DC operation
ICP= --2A
IC= --1A
500µs
IT07327
IT07325
10ms
1ms
100ms
3
0.1
0.01
7
5
3
2
7
5
2
7
5
3
2
7
0.1 1.0 10
23 5723 5 7
100
23 5 723 5
0.001
DC operation
ICP=0.4A
IC=0.2A
500µs
IT07326
10ms
1ms
100ms
Tc=25°C
Single pulse
Mounted on a ceramic board (2000mm2✕0.8mm) 1unit
Tc=25°C
Single pulse
Mounted on a ceramic board (2000mm2✕0.8mm) 1unit
Mounted on a ceramic board (2000mm2
✕
0.8mm) 1unit
Mounted on a ceramic board (2000mm2
✕
0.8mm) 1unit
SOP8501
Rev.0 I Page 5 of 5 I www.onsemi.com SOP8501/D
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