SOP8501 SOP8501 Ordering number : ENN8007 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features * * High breakdown voltage. (VCEO400V) Excellent hFE linearlity. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Symbol Conditions PNP NPN Unit --400 400 V Collector-to-Emitter Voltage VCBO VCEO --400 400 V Emitter-to-Base Voltage VEBO --5 5 V IC --1 0.2 A ICP --2 0.4 Collector Current Collector Current (Pulse) PC Mounted on a ceramic board (2000mm20.8mm) 1unit PT Tj Mounted on a ceramic board (2000mm20.8mm) 1unit Junction Temperature Storage Temperature Tstg Collector Dissipation 1.3 A W 1.6 W 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Conditions Ratings min typ max Unit [PNP] Collector Cutoff Current ICBO VCB=--300V, IE=0 --1.0 A Emitter Cutoff Current IEBO hFE VEB=--4V, IC=0 --1.0 A DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance VCE=--10V, IC=--100mA 200 fT VCE(sat) VCE=--10V, IC=--50mA IC=--200mA, IB=--20mA --1.0 V VBE(sat) V(BR)CBO IC=--200mA, IB=--20mA --1.0 V V(BR)CEO V(BR)EBO 50 MHz IC=--10A, IE=0 --400 V IC=--1mA, RBE= --400 V IE=--10A, IC=0 Cob VCB=--30V, f=1MHz Turn-ON Time ton Storage Time tstg tf Fall Time 40 --5 V 12 pF See specified Test Circuit. 0.25 s See specified Test Circuit. 3.0 s See specified Test Circuit 0.3 s Continued on next page. (c) 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Rev.0 I Page 1 of 5 I www.onsemi.com Publication Order Number: SOP8501/D SOP8501 Continued from preceding page. Parameter Symbol Ratings Conditions min typ max Unit [NPN] Collector Cutoff Current Emitter Cutoff Current ICBO IEBO VCB=300V, IE=0 VEB=4V, IC=0 DC Current Gain hFE VCE=10V, IC=50mA VCE=30V, IC=10mA Gain-Bandwidth Product fT VCE(sat) VBE(sat) Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=10A, IE=0 IC=1mA, RBE= Emitter-to-Base Breakdown Voltage V(BR)EBO Cob IE=10A, IC=0 VCB=30V, f=1MHz Reverse Transfer Capacitance Cre Turn-ON Time Turn-OFF Time 1.0 400 400 V 5 V 4 pF 3 pF ton 0.25 s toff See specified Test Circuit. 5.0 s 8 7 6 5 1 2 3 4 1 : Emitter1 2 : Base1 3 : Emitter2 4 : Base2 5 : Collector2 6 : Collector2 7 : Collector1 8 : Collector1 0.3 6.0 4.4 1.5 1 : Emitter1 2 : Base1 3 : Emitter2 4 : Base2 5 : Collector2 6 : Collector2 7 : Collector1 8 : Collector1 Top view 0.1 0.43 SANYO : SOP8 Switching Time Test Circuit [PNP] [NPN] INPUT IB1 IB1 IB2 IB2 OUTPUT RB VR PW=20s D.C.1% + 50 V V VCB=30V, f=1MHz See specified Test Circuit. 0.2 1.8max 4 1.27 V Electrical Connection 5.0 0.595 MHz 0.6 5 1 A 70 Package Dimensions unit : mm 2233 8 A 200 IC=50mA, IB=5mA IC=50mA, IB=5mA Collector-to-Base Breakdown Voltage Output Capacitance 60 1.0 1.0 100F INPUT OUTPUT RB VR RL PW=20s D.C.1% + 470F VBE=5V VCC= --150V 10IB1= --10IB2=IC= --200mA IC=200m RL=750, RB=50 Rev.0 I Page 2 of 5 I www.onsemi.com 50 + 100F RL + 470F VBE= --1V VCC=150V 10IB1= --10IB2=IC=50mA IC=50m RL=3k, RB=200 SOP8501 IC -- VBE --1.0 [PNP] IC -- VBE 120 [NPN] VCE=10V VCE= --10V 100 --0.4 --25C --0.2 60 40 20 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V hFE -- IC 3 0 --1.4 0.2 0.4 ITR04587 [PNP] 0.6 0.8 1.0 1.2 ITR04446 hFE -- IC [NPN] 5 VCE=10V 3 Ta=75C 25C --25C 7 Ta=70C 25C 2 DC Current Gain, hFE 100 1.4 Base-to-Emitter Voltage, VBE -- V VCE= --10V 2 DC Current Gain, hFE 80 Ta=70C 25C --30C Collector Current, IC -- mA 25C C --0.6 Ta=7 5 Collector Current, IC -- A --0.8 5 3 2 10 100 --30C 7 5 3 2 7 10 5 7 5 3 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- 5 7--1000 2 3 ITR04589 mA VCE(sat) -- IC 3 7 1.0 5 7 10 2 3 5 7 100 5 2 3 ITR04448 VCE(sat) -- IC [PNP] IC / IB=10 [NPN] IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 --1.0 5 3 75C --2 5C 25C 7 Ta = Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 Collector Current, IC -- mA 2 2 --0.1 7 3 5 7 --10 2 3 5 7 --100 2 3 Collector Current, IC -- mA VBE(sat) -- IC 3 2 1.0 7 5 3 2 0.1 7 5 7 1.0 5 5 7 --1000 ITR04597 C -30 C, 25 Ta=70C 2 3 5 7 2 10 3 5 Collector Current, IC -- mA 7 100 2 ITR04450 VBE(sat) -- IC [PNP] 7 IC / IB=10 2 [NPN] IC / IB=10 5 --1.0 Ta= --25C Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 25C 7 75C 5 3 2 --0.1 3 2 1.0 25C Ta= --30C 7 70C 5 7 5 3 5 7 --10 2 3 5 7--100 2 3 Collector Current, IC -- 5 7--1000 2 3 mA ITR04599 3 7 1.0 Rev.0 I Page 3 of 5 I www.onsemi.com 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 ITR04452 SOP8501 SW Time -- IC Switching Time, SW Time -- s 7 tst g 5 [PNP] 5 2 1.0 7 5 tf 2 to n 3 2 1.0 VCC= --150V 10IB1= --10IB2=IC 7 5 2 3 5 7 --100 2 3 5 7 --1000 2 3 3 5 7 2 10 3 5 7 2 100 [PNP] ITR04454 Cob -- VCB 3 VCE= --10V 5 3 Collector Current, IC -- mA ITR04595 f T -- IC 3 [PNP] f=1MHz 2 2 Output Capacitance, Cob -- pF Gain-Bandwidth Product, fT -- MHz to n 0.1 Collector Current, IC -- mA 100 7 5 3 2 10 100 7 5 3 2 10 7 5 7 5 3 5 7 2 --10 3 5 7 --100 2 3 Collector Current, IC -- mA 3 2 ASO 7 5 Tc=25C Single pulse 2 --0.001 Mounted on a ceramic board (2000mm 0.8mm) 1unit --0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5 7--100 2 3 5 7 Collector-to-Emitter Voltage, VCE -- V IT07325 [PNP / NPN] PC -- Ta 2 0.01 7 5 Tc=25C Single pulse Mounted on a ceramic board (2000mm20.8mm) 1unit 2 0.001 0.1 1.6 2 3 1.0 nt ed on ac 0.8 er am ic bo 0.6 ar d( 20 00 0.4 m m2 0 .8 0.2 m Total Dissipation, PT -- W 1.2 ou m )1 un 2 3 5 7 10 2 3 5 7 100 ou 5 7 nt 1.4 ed on ac er 1.2 am ic 1.0 bo ar d (2 00 0.8 0m m2 0 . 0.6 8m m 0.4 )1 un it 0.2 it 2 3 M 1.6 M 1.3 5 7 1.0 Collector-to-Emitter Voltage, VCE -- V IT07326 [PNP / NPN] PT -- Ta 1.8 1.4 0 0 3 3 3 2 s --0.01 1m 3 2 on on 0.1 7 5 ati 7 5 7 --100 2 ITR04593 er --0.1 5 [NPN] IC=0.2A 2 ati 3 op er 2 DC s op s 500 s DC 3 2 0m 7 --10 ICP=0.4A 3 s 10 5 ASO 7 5 m IC= --1A 3 s 500 10 ICP= --2A 2 Collector-to-Base Voltage, VCB -- V [PNP] 1m 7 5 7 --1.0 ITR04591 s m 10 ms 0 10 --1.0 5 Collector Current, IC -- A 3 Collector Current, IC -- A tf 5 2 7 Collector Dissipation, PC -- W 7 3 0.1 5 7 --10 [NPN] tst g 7 3 3 SW Time -- IC 10 VCC= --150V 10IB1= --10IB2=IC Switching Time, SW Time -- s 10 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 0 IT07327 Rev.0 I Page 4 of 5 I www.onsemi.com 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT07328 SOP8501 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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