IRF7316TRPBF - International Rectifier

HEXFET® Power MOSFET

PD - 95182

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

10/7/04

SO-8

VDSS = -30V

RDS(on) = 0.058Ω

IRF7316PbF

Description

Symbol Maximum Units

Drain-Source Voltage VDS -30

Gate-Source Voltage VGS ± 20

TA = 25°C -4.9

TA = 70°C -3.9

Pulsed Drain Current IDM -30

Continuous Source Current (Diode Conduction) IS-2.5

TA = 25°C 2.0

TA = 70°C 1.3

Single Pulse Avalanche Energy EAS 140 mJ

Avalanche Current IAR -2.8 A

Repetitive Avalanche Energy EAR 0.20 mJ

Peak Diode Recovery dv/dt dv/dt -5.0 V/ ns

Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C

Thermal Resistance Ratings

Parameter Symbol Limit Units

Maximum Junction-to-AmbientRθJA 62.5 °C/W

Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)

Continuous Drain Current

Maximum Power Dissipation 

Top View

lGeneration V Technology

lUltra Low On-Resistance

lDual P-Channel MOSFET

lSurface Mount

lFully Avalanche Rated

lLead-Free

IRF7316PbF

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage  -0.78 -1.0 V TJ = 25°C, IS = -1.7A, VGS = 0V 

trr Reverse Recovery Time  44 66 ns TJ = 25°C, IF = -1.7A

Qrr Reverse RecoveryCharge  42 63 nC di/dt = 100A/µs 

Source-Drain Ratings and Characteristics

 

  -30

-2.5

 Surface mounted on FR-4 board, t ≤ 10sec.

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Notes:

 Starting TJ = 25°C, L = 35mH

RG = 25Ω, IAS = -2.8A.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -30   V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient  0.022  V/°C Reference to 25°C, ID = -1mA

 0.042 0.058 VGS = -10V, ID = -4.9A 

 0.076 0.098 VGS = -4.5V, ID = -3.6A 

VGS(th) Gate Threshold Voltage -1.0   V VDS = VGS, ID = -250µA

gfs Forward Transconductance  7.7  S VDS = -15V, ID = -4.9A

  -1.0 VDS = -24V, VGS = 0V

  -25 VDS = -24V, VGS = 0V, TJ = 55°C

Gate-to-Source Forward Leakage   100 VGS = -20V

Gate-to-Source Reverse Leakage   -100 VGS = 20V

QgTotal Gate Charge  23 34 ID = -4.9A

Qgs Gate-to-Source Charge  3.8 5.7 nC VDS = -15V

Qgd Gate-to-Drain ("Miller") Charge  5.9 8.9 VGS = -10V, See Fig. 10 

td(on) Turn-On Delay Time  13 19 VDD = -15V

trRise Time  13 20 ID = -1.0A

td(off) Turn-Off Delay Time  34 51 RG = 6.0Ω

tfFall Time  32 48 RD = 15Ω 

Ciss Input Capacitance  710  VGS = 0V

Coss Output Capacitance  380  pF VDS = -25V

Crss Reverse Transfer Capacitance  180   = 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

Ω

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

IRF7316PbF

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 4. Typical Source-Drain Diode

Forward Voltage

100

0.1 1 10

20µs PULSE WIDTH

T = 25°C

-I , Drain-to-Source Current (A)

-V , Drain-to-Source Voltage (V)

-3.0V

VGS

TOP - 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V

BOTTOM - 3.0V

100

0.1 1 10

-I , Drain-to-Source Current (A)

-V , Drain-to-Source Voltage (V)

-3.0V

VGS

TOP - 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V

BOTTOM - 3.0V

20µs PULSE WIDTH

T = 150°C

100

3.0 3.5 4.0 4.5 5.0 5.5 6.0

T = 25°C

T = 150°C

-I , Drain-to-Source Current (A)

-V , Gate-to-Source Voltage (V)

V = -10V

20µs PULSE WIDTH

100

0.4 0.6 0.8 1.0 1.2 1.4

T = 25°C

T = 150°C

V = 0V

-I , Reverse Drain Current (A)

-V , Source-to-Drain Voltage (V)

IRF7316PbF

0.00

0.04

0.08

0.12

0.16

0 3 6 9 12 15

I = -4.9A

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

Fig 6. Typical On-Resistance Vs. Drain

Current

Fig 7. Typical On-Resistance Vs. Gate

Voltage

Fig 5. Normalized On-Resistance

Vs. Temperature

RDS (on) , Drain-to-Source On Resistance (Ω)

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

4.9A

25 50 75 100 125 150

100

150

200

250

300

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

-1.3A

-2.2A

-2.8A

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0 102030

V = -4.5V

V = -10V

-ID , Drain Current (A)

-VGS , Gate -to-Source Voltage (V)

-4.9A

-10V

IRF7316PbF

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

0.1

100

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

0.50

SINGLE PULSE

(THERMAL RESPONSE)

200

400

600

800

1000

1200

1400

1 10 100

C, Capacitance (pF)

V , Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

VGS = 0V f = 1 MHz

Ciss = Cgs + Cgd + Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

010 20 30 40

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

I =

D-4.9A

V =-15V

IRF7316PbF

SO-8 Package Outline

Dimensions are shown in milimeters (inches)

.189

.1497

0°

.013

.050 BAS IC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BAS IC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX

MILLIMETERSINCHES

MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BAS IC 0.635 BAS IC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] CAB

8X b

0.10 [.004]

4312

F OOT P R I N T

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OU T L I NE CONF OR MS T O JE DE C OU T LI NE MS -012 AA.

NOT E S :

1. DIMENS IONING & TOLERANCING PE R AS ME Y14.5M-1994.

2. CONT ROLL ING DIMENS ION: MILLIMET ER

3. DI ME N S IONS ARE S H OWN IN MIL L I ME T E R S [I NCH E S ] .

5 DIMENS ION DOES NOT INCLUDE MOLD PROT RU SIONS.

6 DIMENS ION DOES NOT INCLUDE MOLD PROT RU SIONS.

MOLD PROT RU SIONS NOT T O EXCE ED 0.25 [.010].

7 DIMENS ION IS T HE LE NGT H OF L EAD F OR S OLDERING T O

A S UBS T RATE .

MOLD PROT RU SIONS NOT T O EXCE ED 0.15 [.006].

8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)

DAT E CODE (YWW)

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F 7101

Y = LAS T DIGIT OF T HE YE AR

PART NUMBER

LOT CODE

WW = WE E K

EXAMPLE: T HIS IS AN IRF7101 (MOSF ET )

P = DE S I GNAT E S L E AD-F R E E

PRODUCT (OPTIONAL)

A = AS S E MB L Y S IT E CODE

IRF7316PbF

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.10/04