RS1A – RS1M
1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER
Data Sheet 2712, Rev. A
Features
Glass Passivated Die Construction
Ideally Suited for Automatic Assembly B
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss A
Fast Recovery Time F
Plastic Case Material has UL Flammability
Classification Rating 94V-O C H G
E
Mechanical Data
Case: Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
SMA/DO-214AC
Dim Min Max Min Max
A 2.50 2.90 0.098 0.114
B 4.00 4.60 0.157 0.181
C 1.40 1.60 0.055 0.063
D 0.152 0.305 0.006 0.012
E 4.80 5.28 0.189 0.208
F 2.00 2.44 0.079 0.096
G0.051 0.203 0.002 0.008
H 0.76 1.52 0.030 0.060
In mm In inch
Characteristic Symbol RS1A RS1B RS1D RS1G RS1J RS1K RS1M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 50 100 200 400 600 800 1000 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current @TL = 90°C IO 1.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method) IFSM 30 A
Forward Voltage @IF = 1.0A VFM 1.30 V
Peak Reverse Current @T
A = 25°C
At Rated DC Blocking Voltage @TA = 125°C IRM 5.0
300 µA
Reverse Recovery Time (Note 1) trr 150 250 500 nS
Typical Junction Capacitance (Note 2) Cj 10 pF
Typical Thermal Resistance (Note 3) RθJL 32 K/W
Operating and Storage Temperature Range Tj, TSTG -50 to +150 °C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
SENSITRON
SEMICONDUCTOR
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0
0.4
1.2
255075100125150175
I , AVERAGE RECTIFIED CURRENT (A)
O
T,LEAD TEMPERATURE ( C)
Fig. 1 Forward Current Derating Curve
L°
0.2
0.6
0.8
1.0
0.01
0.1
1.0
10
0 0.4 0.8 1.2 1.6
I INSTANTANEOUS FORWARD CURRENT (A)
F,
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
F
T = 25°C
j
I Pulse Width: 300 s
Fµ
0
10
20
30
1 10 100
I , PEAK FORWARD SURGE CURRENT (A)
FSM
NUMBER OF CYCLES AT 60Hz
Fig. 3 Forward Surge Current Derating Curve
Single Half-Sine-Wave
(JEDEC Method)
T = 150°C
j
50V DC
Approx
50 NI (Non-inductive)Ω10 NIΩ
1.0
NI
ΩOscilloscope
(Note 1)
Pulse
Generator
(Note 2)
Device
Under
Test
trr
Settimebasefor10ns/cm
+0.5A
0A
-0.25A
-1.0A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0M , 22pF.
2. Rise Time = 10ns max. Input Impedance = 50 .
Ω
Ω
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
(+)
(+)
(-)
(-)
0.1
1.0
10
100
1000
0 20 40 60 80 100 120 140
I , INSTANTANEOUS REVERSE CURRENT (µA)
R
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
T = 125 C
j°
T = 25°C
j
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2712,A
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DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest
version of the datasheet(s).
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medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
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SEMICONDUCTOR
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• 221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798 •
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2712,A
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