MMRF2010N MMRF2010GN
1
RF Device Data
NXP Semiconductors
RF LDMOS Wideband Integrated
Power Amplifiers
The MMRF2010N is a 2--stage RFIC designed for IFF transponder
applications operating from 1030 to 1090 MHz. These devices are suitable for
use in pulse applications such as IFF and secondary radar transponders.
Typical Wideband Performance: (52 Vdc, TA=25°C)
Frequency
(MHz)(1) Signal Type
Pout
(W)
Gps
(dB)
2nd Stage Eff.
(%)
1030 Pulse
(128 μsec, 10% Duty Cycle)
250 Peak 34.1 61.0
1090 33.4 61.9
1030 Pulse
(2 msec, 20% Duty Cycle)
250 Peak 33.6 61.5
1090 32.6 62.9
Narrowband Performance: (50 Vdc, TA=25°C)
Frequency
(MHz) Signal Type
Pout
(W)
Gps
(dB)
2nd Stage Eff.
(%)
1090 (2) Pulse
(128 μsec, 10% Duty Cycle)
250 Peak 32.1 61.4
Load Mismatch/Ruggedness
Frequency
(MHz) Signal Type VSWR
Pin
(W)
Test
Voltage Result
1090 (1) Pulse
(2 msec, 20%
Duty Cycle)
> 20:1 at all
Phase Angles
0.316 W
Peak
(3 dB
Overdrive)
52 No Device
Degradation
1. Measured in 1030–1090 MHz reference circuit.
2. Measured in 1090 MHz narrowband test circuit.
Features
•Characterized over 1030–1090 MHz
•On--chip input (50 ohm) and interstage matching
•Single ended
•Integrated ESD protection
•Low thermal resistance
•Integrated quiescent current temperature compensation with
enable/disable function (3)
Typical Applications
•Driver PA for high power pulse applications
•IFF and secondary radar
3. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.
Document Number: MMRF2010N
Rev. 1, 04/2017
NXP Semiconductors
Technical Data
1030–1090 MHz, 250 W PEAK, 50 V
RF LDMOS INTEGRATED
POWER AMPLIFIERS
MMRF2010N
MMRF2010GN
TO--270WB--14
PLASTIC
MMRF2010N
TO--270WBG--14
PLASTIC
MMRF2010GN
©2015, 2017 NXP B.V.
2
RF Device Data
NXP Semiconductors
MMRF2010N MMRF2010GN
Figure 1. Functional Block Diagram Figure 2. Pin Connections
(Top View)
Quiescent Current
Temperature Compensation (1)
and Thermal Sense
VDS1
RFin
VGS1
RFout/VDS2
VGS2
Note: Exposed backside of the package is
the source terminal for the transistor.
VDS1
N.C.
RFin
N.C.
RFout /VDS2
1
2
3
4
7
8
14
N.C.
9
10
11
VGS2
VGS1
RFin
RFin
Thermal Sense
RFin
RFout Sense
RFout /VDS2
13
6
12
5
Thermal Sense
RFout Sense
Stage 1 Stage 2
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +100 Vdc
Gate--Source Voltage VGS –6, +10 Vdc
Operating Voltage VDD 50, +0 Vdc
Storage Temperature Range Tstg –65 to +150 °C
Case Operating Temperature Range TC–55 to 150 °C
Operating Junction Temperature Range (2,3) TJ–55 to 225 °C
Input Power Pin 25 dBm
Table 2. Thermal Characteristics
Characteristic Symbol Value (3,4) Unit
Thermal Impedance, Junction to Case
Pulse: Case Temperature 81°C, 250 W Peak, 128 μsec Pulse Width, 10% Duty
Cycle, 1090 MHz
Stage 1, 50 Vdc, IDQ1 =80mA
Stage 2, 50 Vdc, IDQ2 = 150 mA
ZθJC
1.1
0.15
°C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) Class 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) Class A, passes 150 V
Charge Device Model (per JESD22--C101) Class II, passes 200 V
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 °C
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family.Gotohttp://www.nxp.com/RF and search for AN1977 or AN1987.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.nxp.com/RF/calculators.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
MMRF2010N MMRF2010GN
3
RF Device Data
NXP Semiconductors
Table 5. Electrical Characteristics (TA=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Stage 1 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0Vdc)
IDSS — — 10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =55Vdc,V
GS =0Vdc)
IDSS — — 1 μAdc
Gate--Source Leakage Current
(VGS =1.5Vdc,V
DS =0Vdc)
IGSS — — 1 μAdc
Stage 1 -- On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=52μAdc)
VGS(th) 1.3 1.8 2.3 Vdc
Fixture Gate Quiescent Voltage
(VDD =50Vdc,I
DQ1 = 80 mAdc, Measured in Functional Test)
VGG(Q) 6.0 7.0 8.0 Vdc
Stage 2 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0Vdc)
IDSS — — 10 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =55Vdc,V
GS =0Vdc)
IDSS — — 1 μAdc
Gate--Source Leakage Current
(VGS =1.5Vdc,V
DS =0Vdc)
IGSS — — 1 μAdc
Stage 2 -- On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 528 μAdc)
VGS(th) 1.3 1.8 2.3 Vdc
Fixture Gate Quiescent Voltage
(VDD =50Vdc,I
DQ2 = 150 mAdc, Measured in Functional Test)
VGG(Q) 2.2 2.7 3.2 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.6Adc)
VDS(on) —0.25 —Vdc
Functional Tests (1,2) (In NXP Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ1 =80mA,I
DQ2 = 150 mA, Pout = 250 W Peak
(25 W Avg.), f = 1090 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain Gps 30.5 32.1 34.0 dB
2nd Stage Drain Efficiency ηD57.0 61.4 — %
Load Mismatch/Ruggedness (In NXP Test Fixture, 50 ohm system) IDQ1 =80mA,I
DQ2 = 150 mA
Frequency
(MHz)
Signal
Type VSWR
Pin
(W) Test Voltage, VDD Result
1090 Pulse
(128 μsec,
10% Duty
Cycle)
> 10:1 at all Phase Angles 0.345 W Peak
(3 dB Overdrive)
50 No Device Degradation
Table 6. Ordering Information
Device Tape and Reel Information Package
MMRF2010NR1
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
TO--270WB--14
MMRF2010GNR1 TO--270WBG--14
1. Part internally input matched.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.
4
RF Device Data
NXP Semiconductors
MMRF2010N MMRF2010GN
TYPICAL CHARACTERISTICS
Figure 3. Normalized IDQ versus Case Temperature
NORMALIZED IDQ
TC, CASE TEMPERATURE (°C)
1.20
1.15
1.05
1.10
1.00
0.95
0.90
0.85
0.80
100–75 –50 0 50 75
–0.000
Slope
(mA/°C)
+0.143
IDQ1
IDQ2
IDQ2
IDQ1
–25 25
VDD =50Vdc
IDQ1 =80mA
IDQ2 = 150 mA
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
108
ID=6.52Amps
8.30 Amps
9.36 Amps
VDD =50Vdc
Pulse Width = 128 μsec
10% Duty Cycle
Figure 4. MTTF versus Junction Temperature -- Pulse
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Note: Performance measured in reference circuit.
MMRF2010N MMRF2010GN
5
RF Device Data
NXP Semiconductors
1030–1090 MHz REFERENCE CIRCUIT —1.97″x2.76″(5.0 cm x 7.0 cm)
Table 7. 1030–1090 MHz Performance (In NXP Reference Circuit, 50 ohm system) VDD =52Vdc,I
DQ1 =80mA,I
DQ2 = 150 mA
Frequency
(MHz) Signal Type
Gps
(dB)
2nd Stage Eff.
(%)
Pout
(W)
1030 Pulse
(128 μsec, 10% Duty Cycle)
34.1 61.0 250 Peak
1090 33.4 61.9
1030 Pulse
(2 msec, 20% Duty Cycle)
33.6 61.5 250 Peak
1090 32.6 62.9
6
RF Device Data
NXP Semiconductors
MMRF2010N MMRF2010GN
1030–1090 MHz REFERENCE CIRCUIT —1.97″x2.76″(5.0 cm x 7.0 cm)
Figure 5. MMRF2010N Reference Circuit Component Layout — 1030–1090 MHz
* Stacked components
Note: Component numbers C2, C3, C4, and C5 are not used.
C23
R1
R2
C26
C24
C19
C18 C20
C17
C11
C13*
C14*
C15*
C16*
C12
C21
C6 C8
C9
C7
C22
VDD2
VDD1
Q1
Rev. B
C1
C26
C25
C10
Table 8. MMRF2010N Reference Circuit Component Designations and Values — 1030–1090 MHz
Part Description Part Number Manufacturer
C1, C10 56 pF Chip Capacitors ATC600F560JT250XT ATC
C11, C12, C17, C18,
C19
51 pF Chip Capacitors ATC600F510JT250XT ATC
C6, C7 10 pF Chip Capacitors ATC600F100JT250XT ATC
C8 6.8 pF Chip Capacitor ATC600F6R8BT250XT ATC
C9 2.4 pF Chip Capacitor ATC600F2R4BT250XT ATC
C13, C14, C15, C16,
C25, C26
10 μF Chip Capacitors C5750X7S2A106M TDK
C20 1μF Chip Capacitor GRM21BR71H105KA12L Murata
C21, C22 8.2 pF Chip Capacitors ATC600F8R2BT250XT ATC
C23 2.7 pF Chip Capacitor ATC600F2R7BT250XT ATC
C24 1.5 pF Chip Capacitor ATC600F1R5BT250XT ATC
Q1 RF Power LDMOS Transistor MMRF2010N NXP
R1 3.9 kΩ, 1/16 W Chip Resistor RR0816P-392-B-T5 Susumu
R2 1kΩ, 1/16 W Chip Resistor RR0816P-102-B-T5 Susumu
PCB Taconic RF60A 0.025″,εr=6.15 —MTL
MMRF2010N MMRF2010GN
7
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 1030–1090 MHz
400
36 80
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency versus
Output Power and Frequency
2000
ηD,DRAIN EFFICIENCY (%)
Gps
ηD
Gps, POWER GAIN (dB)
50 100 150 250 300 350
1090 MHz
Figure 7. Power Gain and Drain Efficiency versus
Output Power and Frequency — Long Pulse
1030 MHz
0
Pin, INPUT POWER (WATTS) PEAK
Figure 8. Output Power versus Input Power and Frequency
0
Pout, OUTPUT POWER (WATTS) PEAK
250
150
100
50
350
300
Pin, INPUT POWER (WATTS) PEAK
Figure 9. Output Power versus Input Power and
Frequency — Long Pulse
35
34
33
32
31
30
29
28
70
60
50
40
30
20
10
0
1030 MHz
VDD =52V,I
DQ1 =80mA,I
DQ2 = 150 mA
Pulse Width = 128 μsec, Duty Cycle = 10%
1090 MHz 1030 MHz
400
36 80
Pout, OUTPUT POWER (WATTS) PEAK
2000
ηD,DRAIN EFFICIENCY (%)
Gps
ηD
Gps, POWER GAIN (dB)
50 100 150 250 300 350
1090 MHz
35
34
33
32
31
30
29
28
70
60
50
40
30
20
10
0
1030 MHz
1090 MHz 1030 MHz
VDD =52V,I
DQ1 =80mA,I
DQ2 = 150 mA
Pulse Width = 2 msec, Duty Cycle = 20%
200
0.05 0.1 0.15 0.2 0.25 0.3
VDD =52V,I
DQ1 =80mA,I
DQ2 = 150 mA
Pulse Width = 128 μsec, Duty Cycle = 10%
0 0.05 0.1 0.15 0.2 0.25 0.3
0
Pout, OUTPUT POWER (WATTS) PEAK
250
150
100
50
350
300
200
VDD =52V,I
DQ1 =80mA,I
DQ2 = 150 mA
Pulse Width = 2 msec, Duty Cycle = 20%
1090 MHz
1030 MHz
1090 MHz
8
RF Device Data
NXP Semiconductors
MMRF2010N MMRF2010GN
1030–1090 MHz REFERENCE CIRCUIT
f = 1030 MHz
f = 1090 MHz
f = 1030 MHz
f = 1090 MHz
Zo=50Ω
Zsource
Zload
f
MHz
Zsource
Ω
Zload
Ω
1030 27.4 + j23.65 1.57 + j1.07
1090 32.5 + j29 1.35 + j1.5
Zsource = Test circuit input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 10. Series Equivalent Source and Load Impedance — 1030–1090 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50 Ω
50 Ω
MMRF2010N MMRF2010GN
9
RF Device Data
NXP Semiconductors
1090 MHz REFERENCE CIRCUIT —1.97″x2.76″(5.0 cm x 7.0 cm)
Figure 11. MMRF2010N Reference Circuit Component Layout — 1090 MHz
* Stacked components
Note: Component numbers C2, C3, C4, and C5 are not used.
C23
R1
R2
C26
C24
C19
C18 C20
C25
C17
C11
C13*
C14*
C15*
C16*
C12
C21
C6 C8 C9
C7
C22
VDD2
VDD1
Q1
Rev. B
C10
C1
Table 9. MMRF2010N Reference Circuit Component Designations and Values — 1090 MHz
Part Description Part Number Manufacturer
C1, C10 56 pF Chip Capacitors ATC600F560JT250XT ATC
C11, C12, C17, C18,
C19
51 pF Chip Capacitors ATC600F510JT250XT ATC
C6, C7 10 pF Chip Capacitors ATC600F100JT250XT ATC
C8 6.8 pF Chip Capacitor ATC600F6R8BT250XT ATC
C9 2.4 pF Chip Capacitor ATC600F2R4BT250XT ATC
C13, C14, C15, C16,
C25, C26
10 μF Chip Capacitors C5750X7S2A106M TDK
C20 1μF Chip Capacitor GRM21BR71H105KA12L Murata
C21, C22 8.2 pF Chip Capacitors ATC600F8R2BT250XT ATC
C23 2.7 pF Chip Capacitor ATC600F2R7BT250XT ATC
C24 1.5 pF Chip Capacitor ATC600F1R5BT250XT ATC
Q1 RF Power LDMOS Transistor MMRF2010N NXP
R1 3.9 kΩ, 1/16 W Chip Resistor RR0816P-392-B-T5 Susumu
R2 1kΩ, 1/16 W Chip Resistor RR0816P-102-B-T5 Susumu
PCB Taconic RF60A 0.025″,εr=6.15 —MTL
10
RF Device Data
NXP Semiconductors
MMRF2010N MMRF2010GN
TYPICAL CHARACTERISTICS — 1090 MHz
REFERENCE CIRCUIT
0.15
Pin, INPUT POWER (WATTS) PEAK
Figure 12. Power Gain, Drain Efficiency and Output
Power versus Input Power
32
31
30
0
90
70
50
10
150
100
ηD, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
29
28
27
26
25
24
0.2 0.25 0.3 0.35
30
50
Pout,OUTPUT
POWER (WATTS) PEAK
Pout
0.10.05
Gps
200
250
300
33
34
35
0.0
Pin, INPUT POWER (WATTS) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
250
150
300
200
0.1 0.15
50
0
100
0.050.0 0.2 0.25 0.3 0.35 0.4
Figure 13. Output Power versus Input Power
ηD
VDD = 50 Vdc, f = 1090 MHz
IDQ1 =80mA,I
DQ2 = 150 mA
Pulse Width = 128 μsec
Duty Cycle = 10%
VDD = 50 Vdc, f = 1090 MHz
IDQ1 =80mA,I
DQ2 = 150 mA
Pulse Width =128 μsec
Duty Cycle = 10%
f
MHz
Zsource
Ω
Zload
Ω
1090 36.7 – j29 1.3 + j0.60
Zsource = Test circuit input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 14. Series Equivalent Source and Load Impedance — 1090 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50 Ω
50 Ω
MMRF2010N MMRF2010GN
11
RF Device Data
NXP Semiconductors
1090 MHz NARROWBAND PRODUCTION TEST FIXTURE
Table 10. 1090 MHz Narrowband Performance (1,2) (In NXP Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ1 =80mA,
IDQ2 = 150 mA, Pout = 250 W Peak (25 W Avg.), f = 1090 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Characteristic Symbol Min Typ Max Unit
Power Gain Gps 30.5 32.1 34.0 dB
2nd Stage Drain Efficiency ηD57.0 61.4 — %
1. Part internally input matched.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.
12
RF Device Data
NXP Semiconductors
MMRF2010N MMRF2010GN
1090 MHz NARROWBAND PRODUCTION TEST FIXTURE —4″x5″(10.2 cm x 12.7 cm)
Figure 15. MMRF2010N Narrowband Test Circuit Component Layout — 1090 MHz
Rev. 0
C7
C20 R1
C6
C5
R2
C4
C1 C2 C3
R3
R4
R5
R6
C21 R7
D1
C22 C23
C24
U1
C17
C13
C12
C11
C9
C8
C10 C19
C14
C15
C16
C18
VDD1
VDD2
VGG2
VGG1
VDD2
V3
PDET
CUT OUT AREA
Thermal Sense
Table 11. MMRF2010N Narrowband Test Circuit Component Designations and Values — 1090 MHz
Part Description Part Number Manufacturer
C1 47 pF Chip Capacitor ATC600F470JT250XT ATC
C2 2.7 pF Chip Capacitor ATC100B2R7CT500XT ATC
C3 2.0 pF Chip Capacitor ATC100B2R0BW500XT ATC
C4 1μF Chip Capacitor GRM31MR71H105KA88L Murata
C5,C6,C7,C11,C14 43 pF Chip Capacitors ATC100B430JT500XT ATC
C8, C9 10 pF Chip Capacitors ATC100B100JT500XT ATC
C10 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC
C12, C13, C15, C16, C20 10 μF Chip Capacitors C5750X752A106M230KB TDK
C17, C18 220 μF, 100 V Electrolytic Capacitors MCGPR100V227M16X26-RH Multicomp
C19 30 pF Chip Capacitor ATC600F300JT250XT ATC
C21 10 nF Chip Capacitor C0805C103J5RAC-TU Kemet
C22 0.1 μF Chip Capacitor C1206C104K1RAC-TU Kemet
C23 47 pF Chip Capacitor ATC800B470JT500XT ATC
C24 1000 pF Chip Capacitor C2012X7R2E102K085AA TDK
D1 Diode Schottky RF SGL 70 V SOT-23 HSMS--2800--TR1G Avago Technologies
R1 2.2 kΩ, 1/8 W Chip Resistor CRCW08052K20JNEA Vishay
R2 0Ω, 1 A Chip Resistor CWCR08050000Z0EA Vishay
R3 1kΩ, 1/10 W Chip Resistor RR1220P-102-D Susumu
R4 50 Ω, 10 W Chip Resistor 060120A25X50--2 Anaren
R5 15 kΩ, 1/10 W Chip Resistor RR1220P-153-D Susumu
R6 51 Ω, 1/8 W Chip Resistor RK73B2ATTD510J KOA Speer
R7 470 kΩ, 1/4 W Chip Resistor CRCW1206470KFKEA Vishay
U1 IC Detector RF PWR 3GHZ SC70--6 LT5534ESC6#TRMPBF Linear Technology
PCB Rogers, RO4350B, 0.020″,εr=3.66 —MTL
MMRF2010N MMRF2010GN
13
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS — 1090 MHz
NARROWBAND PRODUCTION TEST FIXTURE
Pin, INPUT POWER (dBm) PEAK
51
49
47
30
52
50
45
Pout, OUTPUT POWER (dBm) PEAK
48
53
28262418 2220
54
56
55
14
1090 265 284
f
(MHz)
P1dB
(W)
P3dB
(W)
Figure 16. Output Power versus Input Power
VDD =50Vdc,I
DQ1 =80mA,I
DQ2 = 150 mA
f = 1090 MHz, Pulse Width = 128 μsec, 10% Duty Cycle
16
46
31
29
Pout, OUTPUT POWER (WATTS) PEAK
Figure 17. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
Gps, POWER GAIN (dB)
ηDDRAIN EFFICIENCY (%)
30
28
32
10 100 500
10
60
50
40
30
20
33
70
34
ηD
Gps
VDD =50Vdc,I
DQ1 =80mA,I
DQ2 = 150 mA
f = 1090 MHz, Pulse Width = 128 μsec, 10% Duty Cycle
33
31
29
32
30
28
34
10 100 500
10
80
70
60
50
40
30
20
35 90
Pout, OUTPUT POWER (WATTS) PEAK
Figure 18. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
ηD, DRAIN EFFICIENCY (%)
25_C
TC= –55_C
85_C
85_C
25_C
–55_C
Gps
27
ηD
VDD =50Vdc,I
DQ1 =80mA,I
DQ2 = 150 mA
f = 1090 MHz, Pulse Width = 128 μsec
10% Duty Cycle
0
Pout, OUTPUT POWER (WATTS) PEAK
Figure 19. Power Gain versus Output Power
and Drain--Source Voltage
32
31
Gps, POWER GAIN (dB)
28
27
26
150 200 250 300
30
29
VDD =30V
50 100
25
35 V
33
350
40 V
45 V
50 V
IDQ1 =80mA,I
DQ2 = 150 mA
f = 1090 MHz, Pulse Width = 128 μsec
10% Duty Cycle
14
RF Device Data
NXP Semiconductors
MMRF2010N MMRF2010GN
1090 MHz NARROWBAND PRODUCTION TEST FIXTURE
f
MHz
Zsource
Ω
Zload
Ω
1090 13.6 – j24.4 1.3 + j0.4
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 20. Narrowband Series Equivalent Source and Load Impedance — 1090 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50 Ω
50 Ω
MMRF2010N MMRF2010GN
15
RF Device Data
NXP Semiconductors
Figure 21. PCB Pad Layout for TO--270WB--14
2X SOLDER PADS
(14.99)
0.590
(9.45)
0.372(1)
(18.36)
0.723(1)
(0.51)
0.020
(1.02)
0.040
(8.94)
0.352(1)
12X SOLDER PADS
1. Slot dimensions are minimum dimensions and exclude milling tolerances.
(mm)
Inches
(5.61)
0.221
(4.57)
0.180
Solder pad with
thermal via structure.
(7.87)
0.310
(0.51)
0.020
(1.02)
0.040
(8.92)
0.351
(11.76)
0.463
(5.61)
0.221
(4.57)
0.180
(18.29)
0.720
Figure 22. PCB Pad Layout for TO--270WBG--14
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
•AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
•AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
•AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•Electromigration MTTF Calculator
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Oct. 2015 •Initial Release of Data Sheet
1Apr. 2017 •Typical Wideband Performance table: added 2 msec, 20% duty cycle operating conditions and data, p. 1
•Table 1, Maximum Ratings: over--temperature range extended to cover case operation from –55°Cto
+150°C and operating junction range from –55°C to +225°C from the previous lower limit of –40°C to allow
for a cold start after temperature soak at the minimum case operating temperature, p. 2
•Figure 3, Normalized IDQ versus Case Temperature: updated to reflect performance measured in reference
circuit, p. 4
•Table 7, 1030–1090 MHz Performance table: added 2 msec, 20% duty cycle operating conditions and data,
p. 5
•1030–1090 MHz reference circuit: added performance data and graphs, reference circuit component layout
and component designations, pp. 5–8
•Figure 5, 1030–1090 MHz Series Equivalent Source and Load Impedances: impedance data updated to
reflect 1030–1090 MHz reference circuit addition to data sheet, p . 8 (renumbered as Figure 10 after new
Figures 5--9 added)
•Figure 6, 1090 MHz MMRF2010N Reference Circuit Component Layout: layout updated to reflect actual
circuit, p. 9 (renumbered as Figure 11 after new Figures 5--9 added)
•Table 8, 1090 MHz reference circuit component designations and values: R1 and R2 chip resistors
replaced to support changes made to the IDQ compensation circuit to extend the over--temperature range to
cover –55°Cto+85°C from the previous lower limit of –40°C, p. 9 (renumbered as Table 9 after new
Table 8 added)
•Figure 18, Power Gain and Drain Efficiency versus Output Power: TC= –40°C changed –55°C to show
current TCoperation of fixture, p. 13
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Information in this document is provided solely to enable system and software
implementers to use NXP products. There are no express or implied copyright licenses
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E2015, 2017 NXP B.V.
Document Number: MMRF2010N
Rev. 1, 04/2017
