PE42525
Document Category: Product Specification
UltraCMOS® SPDT RF Switch, 9 kHz–60 GHz
©2016, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification DOC-64730-3 – (12/2016)
www.psemi.com
Features
• Wideband support up to 60 GHz
• Low insertion loss
▪1.3 dB @ 26.5 GHz
▪1.7 dB @ 45 GHz
▪1.9 dB @ 50 GHz
▪2.7 dB @ 60 GHz
• Fast switching time of 8 ns
• High port to port isolation
▪41 dB @ 26.5 GHz
▪38 dB @ 45 GHz
▪37 dB @ 50 GHz
▪36 dB @ 60 GHz
• High linearity: IIP3 of 48 dBm
• Flip-chip die, pin-to-pin compatible to the PE42524
and the PE426525
Applications
• Test and measurement
• Microwave backhaul
• Radar
• Military communications
]
Product Description
The PE42525 is a HaRP™ technology-enhanced reflective SPDT RF switch die that supports a wide frequency
range from 9 kHz to 60 GHz. This wideband flip-chip switch is pin compatible to the PE42524 and the
PE426525. It delivers low insertion loss, fast switching time and high isolation performance, making this device
ideal for test and measurement (T&M), microwave backhaul, radar and military communications (mil-comm)
applications. At 50 GHz, the PE42525 exhibits 1.9 dB insertion loss and 37 dB isolation. No blocking capacitors
are required if DC voltage is not present on the RF ports.
The PE42525 is manufactured on Peregrine’s UltraCMOS® process, a patented variation of silicon-on-insulator
(SOI) technology.
Figure 1 • PE42525 Functional Diagram
RFC
ESD
RF2RF1
V1 V2
PE42525
SPDT RF Switch
Page 2 DOC-64730-3 – (12/2016)
www.psemi.com
Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 • Absolute Maximum Ratings for PE42525
Parameter/Condition Min Max Unit
Control voltage (V1, V2) –3.6 3.6 V
RF input power (RFC–RFX, 50Ω)Fig. 2 dBm
Maximum junction temperature +150 °C
Storage temperature range –65 +150 °C
ESD voltage HBM(*)
All pins
RF pins to GND 600
1000 V
V
Note: * Human body model (MIL-STD 883 Method 3015).
PE42525
SPDT RF Switch
DOC-64730-3 – (12/2016) Page 3
www.psemi.com
Recommended Operating Conditions
Table 2 lists the recommended operating conditions for PE42525. Devices should not be operated outside the
recommended operating conditions listed below.
Electrical Specifications
Table 3 provides the PE42525 key electrical specifications @ +25 °C, V1 = +3.0V, V2 = –3.0V or V1 = –3.0V,
V2 = +3.0V (ZS = ZL = 50Ω), unless otherwise specified.
Table 2 • Recommended Operating Condition for PE42525
Parameter Min Typ Max Unit
Control high (V1, V2) 2.7 3.0 3.3 V
Control low (V1, V2) –3.3 –3.0 –2.7 V
Control current 390 nA
RF input power, CW (RFC–RFX)(1) Fig. 2 dBm
RF input power, pulsed (RFC–RFX)(2) Fig. 2 dBm
Operating temperature range –40 +25 +105 °C
Notes:
1) 100% duty cycle, all bands, 50Ω.
2) Pulsed, 5% duty cycle of 4620 μs period, 50Ω.
Table 3 • PE42525 Electrical Specifications
Parameter Path Condition Min Typ Max Unit
Operation frequency 9 kHz 60 GHz As
shown
Insertion loss RFC–RFX
100 MHz
100 MHz–26.5 GHz
26.5–45 GHz
45–50 GHz
50–60 GHz
0.9
1.3
1.7
1.9
2.7
1.1
1.6
2.0
2.3
3.8
dB
dB
dB
dB
dB
Isolation All paths
100 MHz
100 MHz–26.5 GHz
26.5–45 GHz
45–50 GHz
50–60 GHz
74
38
33
32
29
80
41
38
37
36
dB
dB
dB
dB
dB
Return loss (active port) RFC–RFX
100 MHz
100 MHz–26.5 GHz
26.5–45 GHz
45–50 GHz
50–60 GHz
21
17
18
15
13
dB
dB
dB
dB
dB
PE42525
SPDT RF Switch
Page 4 DOC-64730-3 – (12/2016)
www.psemi.com
Control Logic
Table 4 provides the control logic truth table for the
PE42525. States 2 and 3 are used in normal switching
operations.
Return loss (RFC port) RFC–RFX
100 MHz
100 MHz–26.5 GHz
26.5–45 GHz
45–50 GHz
50–60 GHz
21
20
18
16
14
dB
dB
dB
dB
dB
2nd harmonic, 2fo RFC–RFX
+25 dBm output power, 1 GHz
+25 dBm output power, 2 GHz
+25 dBm output power, 6.5 GHz
+25 dBm output power, 13.4 GHz
73
77
89
92
dBc
dBc
dBc
dBc
Input 1dB compression
point(1) Fig. 2 dBm
Input IP2
1 GHz
2 GHz
6.5 GHz
13.4 GHz
93
98
109
112
dBm
dBm
dBm
dBm
Input IP3
1 GHz
2 GHz
6 GHz
13.4 GHz
49
48
46
46
dBm
dBm
dBm
dBm
Video feed through(2) DC measurement 30 mVPP
RF TRISE/TFALL 10%/90% RF 3 ns
Settling time 50% CTRL to 0.05 dB final value 48 60 ns
Switching time 50% CTRL to 90% or 10% RF 8 12 ns
Notes:
1) The input 1dB compression point is a linearity figure of merit. Refer to Table 2 for the RF input power (50Ω).
2) Measured with a 3.5 ns rise time, –3.0/+3.0V pulse and 100 MHz bandwidth.
Table 3 • PE42525 Electrical Specifications (Cont.)
Parameter Path Condition Min Typ Max Unit
Table 4 • Truth Table for PE42525
V1 V2 RF1 RF2 State
–3.0V –3.0V OFF OFF 1
–3.0V +3.0V OFF ON 2
+3.0V –3.0V ON OFF 3
+3.0V +3.0V ON ON 4
PE42525
SPDT RF Switch
DOC-64730-3 – (12/2016) Page 5
www.psemi.com
Figure 2 • Power De-rating Curve, 9 kHz–60 GHz, –40 °C to +105 °C Ambient, 50Ω
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
0.000005 0.00005 0.0005 0.005 0.05 0.5 5 50
Input Power (dBm)
Frequency (GHz)
P1 dB Compression/Abs. Max. RF Input Power (≥ 10 MHz)
Max. RF Input Power, Pulsed (≥ 10 MHz)
Max. RF Input Power, CW & Pulsed (< 10 MHz)
Max. RF Input Power, CW (≥ 10 MHz)
PE42525
SPDT RF Switch
Page 6 DOC-64730-3 – (12/2016)
www.psemi.com
Typical Performance Data
Figure 3–Figure 12 show the typical performance data at 25 °C, V1 = +3.0V, V2 = –3.0V or V1 = –3.0V, V2 =
+3.0V (ZS = ZL = 50Ω), unless otherwise specified.
Figure 3 • Insertion Loss vs Temperature (RFC–RFX)
Figure 4 • RFC Port Return Loss vs Temperature
Figure 5 • Active Port Return Loss vs Temperature
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 5 10 15 20 25 30 35 40 45 50 55 60
Insertion Loss (dB)
Frequency (GHz)
-40 °C +25 °C +85 °C +105 °C
-35
-30
-25
-20
-15
-10
-5
0 5 10 15 20 25 30 35 40 45 50 55 60
Return Loss (dB)
Frequency (GHz)
-40 °C +25 °C +85 °C +105 °C
-35
-30
-25
-20
-15
-10
-5
0 5 10 15 20 25 30 35 40 45 50 55 60
Return Loss (dB)
Frequency (GHz)
-40 °C +25 °C +85 °C +105 °C
Figure 6 • Insertion Loss vs V1/V2 (RFC–RFX)
Figure 7 • RFC Port Return Loss vs V1/V2
Figure 8 • Active Port Return Loss vs V1/V2
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 5 10 15 20 25 30 35 40 45 50 55 60
Insertion Loss (dB)
Frequency (GHz)
+2.7V/-2.7V +3.0V/-3.0V +3.3V/-3.3V
-35
-30
-25
-20
-15
-10
-5
0 5 10 15 20 25 30 35 40 45 50 55 60
Return Loss (dB)
Frequency (GHz)
+2.7V/-2.7V +3.0V/-3.0V +3.3V/-3.3V
-35
-30
-25
-20
-15
-10
-5
0 5 10 15 20 25 30 35 40 45 50 55 60
Return Loss (dB)
Frequency (GHz)
+2.7V/-2.7V +3.0V/-3.0V +3.3V/-3.3V
PE42525
SPDT RF Switch
DOC-64730-3 – (12/2016) Page 7
www.psemi.com
Figure 9 • Isolation vs Temperature (RFX–RFX)
Figure 10 • Isolation vs Temperature (RFC–RFX)
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
0 5 10 15 20 25 30 35 40 45 50 55 60
Isolation (dB)
Frequency (GHz)
-40 °C +25 °C +85 °C +105 °C
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
0 5 10 15 20 25 30 35 40 45 50 55 60
Isolation (dB)
Frequency (GHz)
-40 °C +25 °C +85 °C +105 °C
Figure 11 • Isolation vs V1/V2 (RFX–RFX)
Figure 12 • Isolation vs V1/V2 (RFC–RFX)
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
0 5 10 15 20 25 30 35 40 45 50 55 60
Isolation (dB)
Frequency (GHz)
+2.7V/-2.7V +3.0V/-3.0V +3.3V/-3.3V
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
0 5 10 15 20 25 30 35 40 45 50 55 60
Isolation (dB)
Frequency (GHz)
+2.7V/-2.7V +3.0V/-3.0V +3.3V/-3.3V
PE42525
SPDT RF Switch
Page 8 DOC-64730-3 – (12/2016)
www.psemi.com
Evaluation Setup
The PE42525 s-parameter data and input 1dB compression point up to 60 GHz (Table 3 and Figure 3–
Figure 12) were taken using either co-planar waveguide with ground (CPWG) or grounded co-planar waveguide
(GCPW) on an alumina substrate and RF probes.
The PE42525 2nd harmonic, input 1dB compression point below 18 GHz, input IP3 measurements, settling time
and switching time (Table 3) were taken on a PCB using 2.92 mm connectors.
Bypass capacitors are not required.
Figure 13 • Alumina Substrate Board for PE42525
PE42525
DIE
V1 V2
A
lumina substrate board
Thickness: 0.01 in.
ƐR = 9.9
RF2 RF1
RFC
PE42525
SPDT RF Switch
DOC-64730-3 – (12/2016) Page 9
www.psemi.com
Pin Configuration
This section provides pin information for the
PE42525. Figure 14 shows the pin configuration of
this device. Table 5 provides a description for each
pin.
Figure 14 • Pin Configuration (Bumps Up) for PE42525
1345
913
15
14
1618
1719
1210
8
7
6
11
2
GNDV1V2GND
GND GND
GND
GND GND
GND
GND GND
GND
RF1 RF2
GND
GND
RFC GND
Table 5 • Pin Descriptions for PE42525
Pin No. Pin
Name Description
1, 2, 5, 6,
8–10, 12–
14, 16–19 GND Ground
3 V1 Control input 1
4 V2 Control input 2
7 RF1 RF port 1
11 RFC RF common port
15 RF2 RF port 2
PE42525
SPDT RF Switch
Page 10 DOC-64730-3 – (12/2016)
www.psemi.com
Die Mechanical Specifications
This section provides the die mechanical specifications for the PE42525.
Table 6 • Mechanical Specifications for PE42525
Parameter Min Typ Max Unit Test Condition
Die size, singulated (x, y) 2485 × 2139 2495 × 2149 2505 × 2159 μmIncluding excess silicon,
maximum tolerance = ±10 μm
Wafer thickness 180 200 220 μm
Bump pitch 500 μm
Bump height 59.5 70 80.5 μm
Bump diameter 91 μm
UBM diameter 71 75 79 μm
PE42525
SPDT RF Switch
DOC-64730-3 – (12/2016) Page 11
www.psemi.com
Table 7 • Pin Coordinates for PE42525(*)
Pin # Pin Name Pin Center (μm)
X Y
1 GND 1128.5 –958.5
2 GND 731.5 –646.5
3 V1 253.5 –958.5
4 V2 –253.5 –958.5
5 GND –1128.5 –958.5
6 GND –731.5 –646.5
7 RF1 –785.5 –121.5
8 GND –931.5 363.5
9 GND –1091.5 913.5
10 GND –503.5 753.5
11 RFC 0 629
12 GND 503.5 753.5
13 GND 1091.5 913.5
14 GND 931.5 363.5
15 RF2 785.5 –121.5
16 GND 253.5 183.5
17 GND 253.5 –326.5
18 GND –253.5 183.5
19 GND –253.5 –326.5
Note: * All pin locations originate from the die center and refer to the
center of the pin.
Figure 15 • Pin Layout for PE42525(1)(2)
Notes:
1) Drawings are not drawn to scale.
2) Singulated die size shown, bump side up.
1345
913
15
14
1618
1719
1210
8
7
6
11
2
GNDV1V2GND
GND GND
GND
GND GND
GND
GND GND
GND
RF1 RF2
GND
GND
RFC GND
2149 μm (±10 μm)
2495 μm (±10 μm)
PE42525
SPDT RF Switch
Page 12 DOC-64730-3 – (12/2016)
www.psemi.com
Tape and Reel Specification
This section provides the tape and reel specifications for the PE42525.
Figure 16 • Tape and Reel Specifications for PE42525
4.00 ± 0.05
0.20 ± 0.05
Ko
Bo
Ao
4.00 ± 0.10
2.00 ± 0.05
1.75 ± 0.10
5.50 ± 0.05
8.00 ± 0.10
ø1.50 + 0.10
ø0.50 ± 0.05
Device Orientation in Tape
Pin 1
Ao
Bo
Ko
Nominal
2.41
2.76
0.39
Tolerance
± 0.05
± 0.05
± 0.05
Notes:
Not Drawn to Scale
Dimensions are in millimeters
Maximum cavity angle 5 degrees
Bumped die are oriented active side down
Pocket
PE42525 SPDT RF Switch
Product Specification www.psemi.com DOC-64730-3 – (12/2016)
Document Categories
Advance Information
The product is in a formative or design stage. The datasheet contains
design target specifications for product development. Specifications
and features may change in any manner without notice.
Preliminary Specification
The datasheet contains preliminary data. Additional data may be added
at a later date. Peregrine reserves the right to change specifications at
any time without notice in order to supply the best possible product.
Product Specification
The datasheet contains final data. In the event Peregrine decides to
change the specifications, Peregrine will notify customers of the
intended changes by issuing a CNF (Customer Notification Form).
Product Brief
This document contains a shortened version of the datasheet. For the
full datasheet, contact sales@psemi.com.
Not Recommended for New Designs (NRND)
This product is in production but is not recommended for new designs.
End of Life (EOL)
This product is currently going through the EOL process. It has a
specific last-time buy date.
Obsolete
This product is discontinued. Orders are no longer accepted for this
product.
Sales Contact
For additional information, contact Sales at sales@psemi.com.
Disclaimers
The information in this document is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be
entirely at the user’s own risk. No patent rights or licenses to any circuits described in this document are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to
support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death
might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in
such applications.
Patent Statement
Peregrine products are protected under one or more of the following U.S. patents: patents.psemi.com
Copyright and Trademark
©2016, Peregrine Semiconductor Corporation. All rights reserved. The Peregrine name, logo, UTSi and UltraCMOS are registered trademarks and
HaRP, MultiSwitch and DuNE are trademarks of Peregrine Semiconductor Corp.
Ordering Information
Table 8 lists the available ordering code for the PE42525 as well as shipping method.
Table 8 • Order Code for PE42525
Order Code Description Packaging Shipping Method
PE42525A–X PE42525 SPDT RF switch Die on tape and reel 500 die/T&R