Forward Current = 200 mA
CDBURT0230LL-HF
Low Profile SMD Schottky Barrier Diode
Page 1
REV:B
A
mA
V
V
1
200
20
30
IO
VR
VRRM
IFSM
OC
OC
+125
+125
-55
TSTG
Tj
Parameter Conditions Symbol Min Typ
Max
Unit
uA
V
30
0.39
IR
VF
Parameter Conditions Symbol Min Typ
Max
Unit
VR = 10 V
IF = 200 mA
Dimensions in inches and (millimeter)
QW-G1110
Comchip Technology CO., LTD.
Features
-Majority carrier conduction.
-Ultra low forward voltage.
-Low profile package is 30% thinner than
standards 0603
-Designed for mounting on small surface.
-Extremely thin / leadless package.
RoHS Device
Halogen Free
Reverse Voltage = 20 Volts
0603/SOD-523F
Mechanical data
-Polarity: Indicated by cathode band.
-Weight: 0.0019 grams(approx.).
-Mounting Position: Any
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking code: BS
-Case: 0603 standard package,/SOD-523F
molded plastic.
mA
500
IFM
pF
30
C
VR = 1 V, f=1MHz
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.022(0.55)
0.018(0.45)
0.030(0.75)
0.020(0.50)
Company reserves the right to improve product design , functions and reliability without notice.
Circuit diagram
OC/W
260
RθJA
Typical thermal resistance
-55
0.016(0.40)
0.026(0.65)
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Forward current, surge peak
Junction temperature range
Storage temperature range
Forward voltage
Reverse current
Capacitance
Peak forward current
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)