AH125 1/2W High Linearity InGaP HBT Amplifier Product Features 400 - 2700 MHz +28.1 dBm P1dB +44.3 dBm Output IP3 16.4 dB Gain @ 2140 MHz 150 mA current draw +5 V Single Supply Product Description Functional Diagram The AH125 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance across a broad range with +44.3 dBm OIP3 and +28.1 dBm of compressed 1dB power while drawing 150 mA current. The AH125 is available in a lead-free/green/RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested. GND The AH125 is targeted for use as a driver amplifier in MTTF > 100 Years wireless infrastructure where high linearity, medium power, Lead-free/Green/RoHS-compliant and high efficiency are required. Internal biasing allows the AH125 to maintain high linearity over temperature and SOT-89 Package operate directly off a single +5V supply. This combination Class 2 HBM ESD rating (>2kV) makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations or repeaters. 4 1 2 3 RF IN GND RF OUT Function RF Input RF Output / Vcc Ground Pin No. 1 3 2, 4 Applications Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA Specifications Typical Performance Parameter Units Min Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss W-CDMA Channel Power(2) @ -50 dBc ACLR, 2140 MHz Output P1dB Output IP3(4) Noise Figure Quiescent Collector Current Device Voltage MHz MHz dB dB dB Typ 400 14 2140 16.2 17 9.6 Max Parameter 2700 Frequency Gain Input Return Loss Output Return Loss IS-95A Channel Power(3) 18 Units @ -50 dBc ACPR dBm +19 W-CDMA Channel Power dBm dBm dB mA V +28.1 +44.3 4.4 150 +5 Output P1dB Output IP3 (4) Noise Figure Quiescent Collector Current Device Voltage 130 @ -50 dBc ACLR 170 (2) Typical MHz dB dB dB 920 20 20 9.9 dBm +21 1960 17.1 15 10 2140 16.4 17 9.6 dBm +19 +19 +19 dBm dBm dB mA V +28.7 +45 7.7 +28.2 +44 4.6 150 +5 +28.1 +44.3 4.4 1. Test conditions unless otherwise noted: 25C, Vsupply = +5 V, in tuned application circuit. 2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW 3. IS-95A, 9 channel Fwd, PAR = 9.7 dB @ 0.01% Probability, 1.23 MHz BW. 4. OIP3 is measured with two tones separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule. Measured at 17dBm/tone for 900 MHz, 14 dBm/tone for 1960 MHz, and 15 dBm/tone for 2140 MHz. Absolute Maximum Rating Parameter Rating Storage Temperature RF Input Power, CW, 50 , T=25 C Device Voltage Max Junction Temperature, TJ -65 to +150 C Input P10dB +6 V Thermal Resistance, JC 64.3 C / W For 106 hours MTTF 200 C Operation of this device above any of these parameters may cause permanent damage. TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 Ordering Information Part No. Description AH125-89G AH125-89PCB900 AH125-89PCB1960 AH125-89PCB2140 1/2W High Linearity InGaP HBT Amplifier 900 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board Standard T/R size = 1000 pieces on a 7" reel. Specifications and information are subject to change without notice e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 1 of 8 Sept 2009 AH125 1/2W High Linearity InGaP HBT Amplifier Typical Device Data S-Parameters (VDevice = +5 V, ICC = 150 mA, 25 C, unmatched 50 ohm system) Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. S-Parameters (VDevice = +5 V, ICC = 150 mA, 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 300 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -2.53 -2.58 -6.71 -0.54 -0.53 -0.58 -0.65 -0.78 -0.84 -0.92 -0.92 -0.95 -0.92 -0.92 -0.91 -179.99 176.85 -175.58 -167.12 179.77 174.25 170.83 167.23 164.30 161.92 157.89 154.51 151.93 149.45 146.13 21.10 19.23 17.35 19.80 17.03 15.18 13.81 12.51 11.36 10.29 9.59 8.68 7.88 7.26 6.90 157.54 153.98 170.77 129.20 110.68 100.17 91.94 84.05 77.52 71.75 65.80 59.69 54.26 50.26 44.86 -33.72 -33.85 -43.48 -32.88 -32.22 -32.15 -32.04 -32.15 -32.04 -31.73 -31.97 -32.18 -31.90 -31.73 -31.24 -1.27 -8.70 -45.76 35.56 14.23 7.19 3.29 0.37 -2.55 -2.71 -8.20 -9.38 -11.55 -14.57 -16.09 -5.81 -4.52 -3.67 -6.18 -4.46 -4.10 -3.83 -3.65 -3.58 -3.67 -3.59 -3.51 -3.43 -3.65 -3.74 -162.13 -168.63 167.86 -173.85 -176.71 178.61 174.72 171.10 168.73 165.96 162.08 158.77 156.24 154.48 150.08 Device S-parameters are available for download off of the website at: http://www.tqs.com Application Circuit PCB Layout Circuit Board Material: 0.014" FR4, 4 layer, 1 oz copper, Microstrip line details: width = .031", spacing = .035" r = 4.3, Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 2 of 8 Sept 2009 AH125 1/2W High Linearity InGaP HBT Amplifier 700-800 MHz Application Circuit Performance Plots 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW Typical O-FDMA Performance at 25 C Frequency (MHz) Gain Input Return Loss Output Return Loss EVM Pout=+18 dBm ACLR Pout=+18 dBm Output P1dB Output IP3 700 20.4 12 7.5 750 20.3 17 6.8 800 Units 20.1 dB 25 dB 6.3 dB 0.9 0.7 0.7 % -52.6 -56 -54.4 dBc +28.9 +29.4 +29.2 dBm +43.7 +46.2 +45.5 dBm mA Quiescent Current, Icq 150 V Vcc +5 Pout=+18 dBm/tone, 1MHz spacing R4 Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. The edge of C11 is placed at 40 mil from AH125 RFout pin. (1.7 o @ 750 MHz) 5. The edge of R3 is placed at 210 mil from the edge of C11. (8.7 o @ 750 MHz) 6. The edge of C9 is placed next to the edge of R3. 7. The edge of R1 is placed at 100 mil from AH125 RFin pin. (4.2o @ 750 MHz) 8. The edge of C10 is placed 250 mil from the edge of R1. (10.4 o @ 750 MHz) C8 C8 C4 L1 C10 C9 R2 C11 R1 C10 C1 C2 Gain vs. Frequency Return Loss T=25C ACLR vs. Output Average Power vs. Frequency T=25C 22 T=25C -40 0 700 MHz -5 20 19 18 -10 -15 -20 S11 740 760 Frequency (MHz) 780 800 OIP3 vs. Output Power/Tone vs. Frequency 720 740 760 780 Frequency (GHz) EVM (%) OIP3 (dBm) 40 35 750 MHz T=25C 802.16-2004 O-FDMA, 64QAM1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW 3 2 14 200 180 160 140 700 MHz 0 12 20 800 MHz 30 10 19 800 MHz 1 750 MHz 17 18 Output Power (dBm) 220 4 45 16 Current vs Output Average Power vs. Frequency T=25C 5 700 MHz 700 MHz 15 800 EVM vs. Output Average Power vs. Frequency T=25C 50 -55 -65 700 Collector Current (mA) 720 -50 S22 -30 700 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7 dB @ 0.01% Probability 3.84 MHz BW -60 -25 17 800 MHz -45 ACLR (dBc) S11, S22 (dB) Gain (dB) 21 750 MHz 16 Output Power/Tone (dBm) 18 20 15 16 17 18 19 20 21 Output Power (dBm) 22 750 MHz 800 MHz 120 15 16 17 18 19 20 Output Power (dBm) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 3 of 8 Sept 2009 AH125 1/2W High Linearity InGaP HBT Amplifier 869-960 MHz Reference Design (AH125-89PCB900) IS-95A, 9 channel Fwd, PAR = 9.7 dB @ 0.01% Probability Typical IS-95 Performance at 25 C Frequency (MHz) Gain Input Return Loss Output Return Loss ACPR 869 20 14 10 920 20 20 9.9 960 Units 19.9 dB 22 dB 9.9 dB -62 -62.5 -62 Pout=+18 dBm Output P1dB Output IP3 dBc +28.3 +28.7 +28.6 dBm Pout=+17dBm/tone, 1MHz spacing +45 +45 +45 dBm 7.9 7.7 150 +5 7.5 dB mA V Noise Figure Quiescent Current, Icq Vcc R4 Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. The edge of R2 is placed at 280 mil from AH125 RFout pin. (14 o @ 920 MHz) 5. The edge of C9 is placed 35 mil from the edge of R2. (1.8 o @ 920 MHz) 6. The edge of R1 is placed at 100 mil from AH125 RFin pin. (5 o @ 920 MHz) 7. The edge of C10 is placed 105 mil from the edge of R1. (5.3 o @ 920 MHz) C8 C8 C4 L1 C10 R1 R2 C2 C9 C10 C1 C9 T=25C 19 -10 -15 S11 0.88 0.90 0.92 0.94 0.96 -25 0.84 0.98 OIP3 vs. Output Power/Tone vs. Frequency 869 MHz S22 0.86 0.88 0.90 0.92 Frequency (GHz) 0.94 0.96 10 0.98 -30 Collector Current (mA) -35 200 16 18 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.3 dB @ 0.01% Probability 3.84 MHz BW -45 -50 160 40 960 MHz 14 Output Power (dBm) ACLR (dBc) -40 180 45 920 MHz T=25C T=25C 220 12 ACLR vs. Output Average Power vs. Frequency Current vs Output Average Power vs. Frequency T=25C 50 OIP3 (dBm) -70 -80 Frequency (GHz) 55 -65 -75 -20 0.86 IS-95A, 9 channel Fwd PAR=9.7@0.01% Probability -60 ACPR (dBc) 20 T=25C -55 -5 S11, S22 (dB) Gain (dB) T=25C 0 21 18 0.84 ACPR vs. Output Average Power vs. Frequency Return Loss Gain vs. Frequency 22 -55 -60 140 869 MHz 920 MHz 869 MHz 960 MHz 35 920 MHz -65 960 MHz 12 14 16 18 20 869 MHz 920 MHz 960 MHz -70 120 10 12 14 16 18 Output Power (dBm) Output Power/Tone (dBm) 20 22 10 12 14 16 Output Power (dBm) 18 20 NF vs. Frequency T=25C 10 NF (dB) 9 8 7 6 0.90 0.92 0.94 0.96 0.98 Frequency (GHz) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 4 of 8 Sept 2009 AH125 1/2W High Linearity InGaP HBT Amplifier 1930-1990 MHz Reference Design (AH125-89PCB1960) W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW Typical W-CDMA Performance at 25 C Frequency (MHz) Gain Input Return Loss Output Return Loss ACLR 1930 1960 1990 Units 17 17 17 dB 12 15 17 dB 11 10 9.3 dB Pout=+18 dBm Output P1dB Output IP3 Pout=+14dBm/tone, 1MHz spacing -53 -54 -54 dBc +28 +28.2 +28 dBm +45.3 +44 +45 dBm 4.5 4.6 150 +5 4.8 dB mA V Noise Figure Quiescent Current, Icq Vcc R4 Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. The edge of C9 is placed at 250 mil from AH125 RFout pin. (27 o @ 1960 MHz) 5. The edge of R1 is placed against the edge of C10. 6. The edge of C10 is placed at 30 mil from AH125 RFin pin. (3.3 o @ 1960 MHz) C8 C8 C4 C3 R20 C20 L1 C10 R1 R2 C2 C9 C10 C1 C9 T=25C T=25C 0 19 -45 17 ACLR (dBc) 18 -10 -15 -20 16 1.94 1.96 Frequency (GHz) 1.98 S22 1930 MHz 1.96 Frequency (GHz) 1.98 2.00 12 14 16 18 Output Power (dBm) Collector Efficiency (%) Collector Current (mA) 160 140 120 40 1930 MHz 1960 MHz 1930 MHz 1990 MHz 14 16 18 20 22 1960 MHz 1990 MHz 25 20 15 10 5 1990 MHz 0 100 38 12 1960 MHz 20 T=25C 30 180 42 1990 MHz Efficiency vs Output Average Power vs. Frequency T=25C 1930 MHz 44 1960 MHz -65 1.94 200 T=25C 46 OIP3 (dBm) -55 Current vs Output Average Power vs. Frequency OIP3 vs. Output Power/Tone vs. Frequency 48 -25 1.92 2.00 -50 -60 S11 15 1.92 T=25C -40 -5 S11, S22 (dB) Gain (dB) ACLR vs. Output Average Power vs. Frequency Return Loss Gain vs. Frequency 20 10 12 Output Power/Tone (dBm) 14 16 18 Output Power (dBm) 20 22 10 12 14 16 18 Output Power (dBm) 20 22 NF vs. Frequency T=25C 6 NF (dB) 5 4 3 2 1.90 1.92 1.94 1.96 1.98 2.00 Frequency (GHz) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 5 of 8 Sept 2009 AH125 1/2W High Linearity InGaP HBT Amplifier 2110-2170 MHz Reference Design (AH125-89PCB2140) W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW Typical W-CDMA Performance at 25 C Frequency (MHz) Gain Input Return Loss Output Return Loss ACLR Pout=+18 dBm Output P1dB Output IP3 Pout=+15 dBm/tone, 1MHz spacing 2110 2140 2170 Units 16.2 16.4 16.2 dB 13 17 21 dB 10 9.6 9 dB -53.6 -53.4 -53 dBc +28 +28 dBm +28.1 +43.6 +44.3 +44.6 dBm Noise Figure Quiescent Current, Icq Vcc 4.3 4.4 150 +5 4.4 dB mA V R4 Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. The edge of C9 is placed at 120 mil from AH125 RFout pin. (14 o @ 2140 MHz) 5. The edge of C2 is placed at 280 mil from the edge of C9. (33 o @ 2140 MHz) 6. The edge of C10 is placed at 60 mil from AH125 RFin pin. (7 o @ 2140 MHz) 7. The edge of R1 is placed 35 mil from the edge of C10. (4 o @ 2140 MHz) C8 C8 C4 C3 L1 C10 R1 R2 C2 C9 C10 C1 C9 T=25C -50 15 ACLR (dBc) 16 -10 -15 S11 2.14 2.16 2.18 OIP3 vs. Output Power/Tone vs. Frequency 2110 MHz S22 2.12 Frequency (GHz) 2.14 2.16 Frequency (GHz) 2.18 10 2.20 Current vs Output Average Power vs. Frequency T=25C 50 -60 12 14 16 Output Power (dBm) 2110 MHz 2140 MHz 16 18 20 200 180 160 140 2110 MHz 2170 MHz 2140 MHz 2140 MHz 2170 MHz 25 20 15 10 5 0 10 22 20 2170 MHz 120 30 14 Collector Efficiency (%) Collector Current (mA) OIP3 (dBm) 35 18 T=25C 30 2110 MHz 40 2170 MHz Efficiency vs Output Average Power vs. Frequency T=25C 220 45 2140 MHz -70 -25 2.10 2.20 -55 -65 -20 2.12 T=25C -45 -5 S11, S22 (dB) Gain (dB) T=25C 0 17 14 2.10 ACLR vs. Output Average Power vs. Frequency Return Loss Gain vs. Frequency 18 12 14 16 18 Output Power (dBm) Output Power/Tone (dBm) 20 10 22 12 14 16 18 Output Power (dBm) 20 22 NF vs. Frequency T=25C 6 NF (dB) 5 4 3 2 2.10 2.12 2.14 2.16 2.18 Frequency (GHz) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 6 of 8 Sept 2009 AH125 1/2W High Linearity InGaP HBT Amplifier 2.5-2.7 GHz Application Circuit Performance Plots 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW Typical O-FDMA Performance at 25 C Frequency (GHz) Gain Input Return Loss Output Return Loss EVM Pout=+20 dBm Output P1dB Output IP3 Pout=+12 dBm/tone, 1MHz spacing 2.5 14.1 10 10 2.6 14.3 16 10 2.7 Units 14.1 dB 16 dB 10 dB 1.5 1.5 1.5 % +28 +28 +28 dBm +49.5 +45.7 +43.2 dBm Quiescent Current, Icq Vcc mA V 150 +5 R4 C8 Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. The edge of C9 is placed at 50 mil from AH125 RFout pin. (7.2 o @ 2.6 GHz) 5. The edge of C10 is placed at 30 mil from AH125 RFin pin. (4.3o @ 2.6 GHz) 6. The edge of R1 is placed 35 mil from the edge of C10. (5 o @ 2.6 GHz) C8 C4 C3 L1 C10 R1 C1 R2 C2 C9 C10 C9 Gain vs. Frequency Return Loss T=25C EVM vs. Output Average Power vs. Frequency T=25C 15 T=25C 5 0 2.5 GHz -5 13 12 11 4 -10 3 -15 2 -20 1 -25 S11 2.50 2.60 Frequency (GHz) 2.70 -30 2.40 2.80 Current vs Output Average Power vs. Frequency S22 0 2.50 2.60 2.70 Frequency (GHz) Collector Current (mA) 2.5 GHz ACLR (dBc) 170 160 2.5 GHz 2.6 GHz 2.7 GHz 12 14 16 18 Output Power (dBm) 20 22 20 22 45 -55 40 -60 35 2.5 GHz -70 140 18 2.7 GHz -65 150 16 T=25C 50 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7 dB @ 0.01% Probability 3.84 MHz BW -50 180 2.6 GHz 14 OIP3 vs. Output Power/Tone vs. Frequency T=25C -45 12 Output Power (dBm) ACLR vs. Output Average Power vs. Frequency T=25C 190 10 10 2.80 OIP3 (dBm) 10 2.40 2.7 GHz 802.16-2004 O-FDMA, 64QAM1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW EVM (%) S11, S22 (dB) Gain (dB) 14 2.6 GHz 2.6 GHz 2.7 GHz 30 10 12 14 16 Output Power (dBm) 18 20 8 10 12 14 16 18 20 Output Power/Tone (dBm) Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 7 of 8 Sept 2009 AH125 1/2W High Linearity InGaP HBT Amplifier Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The AH125 will be marked with an "AH125G" designator with a lot code marked below the part designator. The "Y" represents the last digit of the year the part was manufactured, the "XXX" is an autogenerated number, and "Z" refers to a wafer number in a lot batch. AH125G YXXX-Z Tape and reel specifications for this part are located on the website in the "Application Notes" section. MSL / ESD Rating Land Pattern ESD Rating: Value: Test: Standard: Class 2 Passes 2000V to <4000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 2000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 8 of 8 Sept 2009