Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 1 of 8 Sept 2009
AH125
½W High Linearity InGaP HBT Amplifier
Product Features
400 – 2700 MHz
+28.1 dBm P1dB
+44.3 dBm Output IP3
16.4 dB Gain @ 2140 MHz
150 mA current draw
+5 V Single Supply
MTTF > 100 Years
Lead-free/Green/RoHS-compliant
SOT-89 Package
Class 2 HBM ESD rating (>2kV)
Applications
Repeaters
Mobile Infrastructure
LTE / WCDMA / EDGE / CDMA
Product Description
The AH125 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance across a broad range with
+44.3 dBm OIP3 and +28.1 dBm of compressed 1dB
power while drawing 150 mA current. The AH125 is
available in a lead-free/green/RoHS-compliant SOT-89
package. All devices are 100% RF and DC tested.
The AH125 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity, medium power,
and high efficiency are required. Internal biasing allows
the AH125 to maintain high linearity over temperature and
operate directly off a single +5V supply. This combination
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations or repeaters.
Functional Diagram
RF IN GND RF OUT
GND
1
2
3
4
Function
RF Input
RF Output / Vcc
Ground
Specifications
Parameter
Units
Min
Typ
Max
Operational Bandwidth
MHz
400
2700
Test Frequency
MHz
2140
Gain
dB
14
16.2
18
Input Return Loss
dB
17
Output Return Loss
dB
9.6
W-CDMA Channel Power(2)
@ -50 dBc ACLR, 2140 MHz
dBm
+19
Output P1dB
dBm
+28.1
Output IP3(4)
dBm
+44.3
Noise Figure
dB
4.4
Quiescent Collector Current
mA
130
150
170
Device Voltage
V
+5
1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit.
2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW
3. IS-95A, 9 channel Fwd, PAR = 9.7 dB @ 0.01% Probability, 1.23 MHz BW.
4. OIP3 is measured with two tones separated by 1 MHz. The suppression on the largest IM3 product
is used to calculate the OIP3 using a 2:1 rule. Measured at 17dBm/tone for 900 MHz, 14 dBm/tone
for 1960 MHz, and 15 dBm/tone for 2140 MHz.
Absolute Maximum Rating
Parameter
Rating
Storage Temperature
-65 to +150 C
RF Input Power, CW, 50 , T=25 C
Input P10dB
Device Voltage
+6 V
Max Junction Temperature, TJ
For 106 hours MTTF
200 C
Thermal Resistance, ΘJC
64.3 C / W
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
Parameter
Units
Typical
Frequency
MHz
920
1960
2140
Gain
dB
20
17.1
16.4
Input Return Loss
dB
20
15
17
Output Return Loss
dB
9.9
10
9.6
IS-95A Channel Power(3)
@ -50 dBc ACPR
dBm
+21
W-CDMA Channel Power(2)
@ -50 dBc ACLR
dBm
+19
+19
+19
Output P1dB
dBm
+28.7
+28.2
+28.1
Output IP3 (4)
dBm
+45
+44
+44.3
Noise Figure
dB
7.7
4.6
4.4
Quiescent Collector Current
mA
150
Device Voltage
V
+5
Ordering Information
Part No.
Description
AH125-89G
½W High Linearity InGaP HBT Amplifier
AH125-89PCB900
900 MHz Evaluation Board
AH125-89PCB1960
1960 MHz Evaluation Board
AH125-89PCB2140
2140 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 2 of 8 Sept 2009
AH125
½W High Linearity InGaP HBT Amplifier
Typical Device Data
S-Parameters (VDevice = +5 V, ICC = 150 mA, 25 C, unmatched 50 ohm system)
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that
actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
S-Parameters (VDevice = +5 V, ICC = 150 mA, 25 C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
-2.53
-179.99
21.10
157.54
-33.72
-1.27
-5.81
-162.13
100
-2.58
176.85
19.23
153.98
-33.85
-8.70
-4.52
-168.63
300
-6.71
-175.58
17.35
170.77
-43.48
-45.76
-3.67
167.86
500
-0.54
-167.12
19.80
129.20
-32.88
35.56
-6.18
-173.85
700
-0.53
179.77
17.03
110.68
-32.22
14.23
-4.46
-176.71
900
-0.58
174.25
15.18
100.17
-32.15
7.19
-4.10
178.61
1100
-0.65
170.83
13.81
91.94
-32.04
3.29
-3.83
174.72
1300
-0.78
167.23
12.51
84.05
-32.15
0.37
-3.65
171.10
1500
-0.84
164.30
11.36
77.52
-32.04
-2.55
-3.58
168.73
1700
-0.92
161.92
10.29
71.75
-31.73
-2.71
-3.67
165.96
1900
-0.92
157.89
9.59
65.80
-31.97
-8.20
-3.59
162.08
2100
-0.95
154.51
8.68
59.69
-32.18
-9.38
-3.51
158.77
2300
-0.92
151.93
7.88
54.26
-31.90
-11.55
-3.43
156.24
2500
-0.92
149.45
7.26
50.26
-31.73
-14.57
-3.65
154.48
2700
-0.91
146.13
6.90
44.86
-31.24
-16.09
-3.74
150.08
Device S-parameters are available for download off of the website at: http://www.tqs.com
Application Circuit PCB Layout
Circuit Board Material: 0.014” FR4, 4 layer, 1 oz copper, r = 4.3,
Microstrip line details: width = .031”, spacing = .035”
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 3 of 8 Sept 2009
AH125
½W High Linearity InGaP HBT Amplifier
700-800 MHz Application Circuit Performance Plots
802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW
Typical O-FDMA Performance at 25 C
Frequency (MHz)
700
750
800
Units
Gain
20.4
20.3
20.1
dB
Input Return Loss
12
17
25
dB
Output Return Loss
7.5
6.8
6.3
dB
EVM
Pout=+18 dBm
0.9
0.7
0.7
%
ACLR
Pout=+18 dBm
-52.6
-56
-54.4
dBc
Output P1dB
+28.9
+29.4
+29.2
dBm
Output IP3
Pout=+18 dBm/tone, 1MHz spacing
+43.7
+46.2
+45.5
dBm
Quiescent Current, Icq
150
mA
Vcc
+5
V
C4
C2
R4
L1
R1
C1
C11
C10
C8
C8
C10 R2
C9
Notes:
1. The primary RF microstrip line is 50 .
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 jumpers can be replaced with copper trace in target application.
4. The edge of C11 is placed at 40 mil from AH125 RFout pin. (1.7o @ 750 MHz)
5. The edge of R3 is placed at 210 mil from the edge of C11. (8.7o @ 750 MHz)
6. The edge of C9 is placed next to the edge of R3.
7. The edge of R1 is placed at 100 mil from AH125 RFin pin. (4.2o @ 750 MHz)
8. The edge of C10 is placed 250 mil from the edge of R1. (10.4o @ 750 MHz)
17
18
19
20
21
22
700 720 740 760 780 800
Gain (dB)
Frequency (MHz)
Gain vs. Frequency
T=25°C
-30
-25
-20
-15
-10
-5
0
700 720 740 760 780 800
S11, S22 (dB)
Frequency (GHz)
Return Loss
T=25°C
S11
S22
-65
-60
-55
-50
-45
-40
15 16 17 18 19 20
ACLR (dBc)
Output Power (dBm)
ACLR vs. Output Average Power vs. Frequency
T=25°C
700 MHz
750 MHz
800 MHz
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7 dB @ 0.01% Probability
3.84 MHz BW
30
35
40
45
50
10 12 14 16 18 20
OIP3 (dBm)
Output Power/Tone (dBm)
OIP3 vs. Output Power/Tone vs. Frequency
T=25°C
700 MHz
750 MHz
800 MHz
0
1
2
3
4
5
15 16 17 18 19 20 21 22
EVM (%)
Output Power (dBm)
EVM vs. Output Average Power vs. Frequency
T=25°C
700 MHz
750 MHz
800 MHz
802.16-2004 O-FDMA, 64QAM-
1/2, 1024-FFT, 20 symbols and 30
subchannels, 5 MHz Carrier BW
120
140
160
180
200
220
15 16 17 18 19 20
Collector Current (mA)
Output Power (dBm)
Current vs Output Average Power vs. Frequency
T=25°C
700 MHz
750 MHz
800 MHz
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 4 of 8 Sept 2009
AH125
½W High Linearity InGaP HBT Amplifier
C4
C2R2
R4
L1
R1
C1
C9
C10
C8
C8
C9
C10
869-960 MHz Reference Design (AH125-89PCB900)
IS-95A, 9 channel Fwd, PAR = 9.7 dB @ 0.01% Probability
Typical IS-95 Performance at 25 C
Frequency (MHz)
869
920
960
Units
Gain
20
20
19.9
dB
Input Return Loss
14
20
22
dB
Output Return Loss
10
9.9
9.9
dB
ACPR
Pout=+18 dBm
-62
-62.5
-62
dBc
Output P1dB
+28.3
+28.7
+28.6
dBm
Output IP3
Pout=+17dBm/tone, 1MHz spacing
+45
+45
+45
dBm
Noise Figure
7.9
7.7
7.5
dB
Quiescent Current, Icq
150
mA
Vcc
+5
V
Notes:
1. The primary RF microstrip line is 50 .
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 jumpers can be replaced with copper trace in target application.
4. The edge of R2 is placed at 280 mil from AH125 RFout pin. (14o @ 920 MHz)
5. The edge of C9 is placed 35 mil from the edge of R2. (1.8o @ 920 MHz)
6. The edge of R1 is placed at 100 mil from AH125 RFin pin. (5o @ 920 MHz)
7. The edge of C10 is placed 105 mil from the edge of R1. (5.3o @ 920 MHz)
Gain vs. Frequency
T=25°C
18
19
20
21
22
0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98
Frequency (GHz)
Gain (dB)
Return Loss
T=25°C
-25
-20
-15
-10
-5
0
0.84 0.86 0.88 0.90 0.92 0.94 0.96 0.98
Frequency (GHz)
S11, S22 (dB)
S11 S22
ACPR vs. Output Average Power vs. Frequency
T=25°C
-80
-75
-70
-65
-60
-55
10 12 14 16 18
Output Power (dBm)
ACPR (dBc)
869 MHz 920 MHz 960 MHz
IS-95A, 9 channel Fwd
PAR=9.7@0.01% Probability
OIP3 vs. Output Power/Tone vs. Frequency
T=25°C
35
40
45
50
55
12 14 16 18 20
Output Power/Tone (dBm)
OIP3 (dBm)
869 MHz 920 MHz 960 MHz
Current vs Output Average Power vs. Frequency
T=25°C
120
140
160
180
200
220
10 12 14 16 18 20 22
Output Power (dBm)
Collector Current (mA)
869 MHz 920 MHz 960 MHz
-70
-65
-60
-55
-50
-45
-40
-35
-30
10 12 14 16 18 20
ACLR (dBc)
Output Power (dBm)
ACLR vs. Output Average Power vs. Frequency
T=25°C
869 MHz
920 MHz
960 MHz
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.3 dB @ 0.01% Probability
3.84 MHz BW
NF vs. Frequency
T=25°C
6
7
8
9
10
0.90 0.92 0.94 0.96 0.98
Frequency (GHz)
NF (dB)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 5 of 8 Sept 2009
AH125
½W High Linearity InGaP HBT Amplifier
C3
C4
C2R2
R4
L1
R1
C1
C9
C10
C8
C8
C9
C10
R20
C20
1930-1990 MHz Reference Design (AH125-89PCB1960)
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW
Typical W-CDMA Performance at 25 C
Frequency (MHz)
1930
1960
1990
Units
Gain
17
17
17
dB
Input Return Loss
12
15
17
dB
Output Return Loss
11
10
9.3
dB
ACLR
Pout=+18 dBm
-53
-54
-54
dBc
Output P1dB
+28
+28.2
+28
dBm
Output IP3
Pout=+14dBm/tone, 1MHz spacing
+45.3
+44
+45
dBm
Noise Figure
4.5
4.6
4.8
dB
Quiescent Current, Icq
150
mA
Vcc
+5
V
Notes:
1. The primary RF microstrip line is 50 .
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 jumpers can be replaced with copper trace in target application.
4. The edge of C9 is placed at 250 mil from AH125 RFout pin. (27 o @ 1960 MHz)
5. The edge of R1 is placed against the edge of C10.
6. The edge of C10 is placed at 30 mil from AH125 RFin pin. (3.3 o @ 1960 MHz)
Gain vs. Frequency
T=25°C
15
16
17
18
19
20
1.92 1.94 1.96 1.98 2.00
Frequency (GHz)
Gain (dB)
Return Loss
T=25°C
-25
-20
-15
-10
-5
0
1.92 1.94 1.96 1.98 2.00
Frequency (GHz)
S11, S22 (dB)
S11 S22
ACLR vs. Output Average Power vs. Frequency
T=25°C
-65
-60
-55
-50
-45
-40
12 14 16 18 20 22
Output Power (dBm)
ACLR (dBc)
1930 MHz 1960 MHz 1990 MHz
OIP3 vs. Output Power/Tone vs. Frequency
T=25°C
38
40
42
44
46
48
12 14 16 18 20
Output Power/Tone (dBm)
OIP3 (dBm)
1930 MHz 1960 MHz 1990 MHz
Current vs Output Average Power vs. Frequency
T=25°C
100
120
140
160
180
200
10 12 14 16 18 20 22
Output Power (dBm)
Collector Current (mA)
1930 MHz 1960 MHz 1990 MHz
Efficiency vs Output Average Power vs. Frequency
T=25°C
0
5
10
15
20
25
30
10 12 14 16 18 20 22
Output Power (dBm)
Collector Efficiency (%)
1930 MHz 1960 MHz 1990 MHz
NF vs. Frequency
T=25°C
2
3
4
5
6
1.90 1.92 1.94 1.96 1.98 2.00
Frequency (GHz)
NF (dB)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 6 of 8 Sept 2009
AH125
½W High Linearity InGaP HBT Amplifier
C3
C4
C2R2
R4
L1
R1
C1
C9
C10
C8
C8
C9
C10
2110-2170 MHz Reference Design (AH125-89PCB2140)
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.3 dB @ 0.01% Probability, 3.84 MHz BW
Typical W-CDMA Performance at 25 C
Frequency (MHz)
2110
2140
2170
Units
Gain
16.2
16.4
16.2
dB
Input Return Loss
13
17
21
dB
Output Return Loss
10
9.6
9
dB
ACLR
Pout=+18 dBm
-53.6
-53.4
-53
dBc
Output P1dB
+28
+28.1
+28
dBm
Output IP3
Pout=+15 dBm/tone, 1MHz spacing
+43.6
+44.3
+44.6
dBm
Noise Figure
4.3
4.4
4.4
dB
Quiescent Current, Icq
150
mA
Vcc
+5
V
Notes:
1. The primary RF microstrip line is 50 .
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 jumpers can be replaced with copper trace in target application.
4. The edge of C9 is placed at 120 mil from AH125 RFout pin. (14 o @ 2140 MHz)
5. The edge of C2 is placed at 280 mil from the edge of C9. (33 o @ 2140 MHz)
6. The edge of C10 is placed at 60 mil from AH125 RFin pin. (7 o @ 2140 MHz)
7. The edge of R1 is placed 35 mil from the edge of C10. (4 o @ 2140 MHz)
Gain vs. Frequency
T=25°C
14
15
16
17
18
2.10 2.12 2.14 2.16 2.18 2.20
Frequency (GHz)
Gain (dB)
Return Loss
T=25°C
-25
-20
-15
-10
-5
0
2.10 2.12 2.14 2.16 2.18 2.20
Frequency (GHz)
S11, S22 (dB)
S11 S22
ACLR vs. Output Average Power vs. Frequency
T=25°C
-70
-65
-60
-55
-50
-45
10 12 14 16 18 20
Output Power (dBm)
ACLR (dBc)
2110 MHz 2140 MHz 2170 MHz
OIP3 vs. Output Power/Tone vs. Frequency
T=25°C
30
35
40
45
50
14 16 18 20 22
Output Power/Tone (dBm)
OIP3 (dBm)
2110 MHz 2140 MHz 2170 MHz
Current vs Output Average Power vs. Frequency
T=25°C
120
140
160
180
200
220
10 12 14 16 18 20 22
Output Power (dBm)
Collector Current (mA)
2110 MHz 2140 MHz 2170 MHz
Efficiency vs Output Average Power vs. Frequency
T=25°C
0
5
10
15
20
25
30
10 12 14 16 18 20 22
Output Power (dBm)
Collector Efficiency (%)
2110 MHz 2140 MHz 2170 MHz
NF vs. Frequency
T=25°C
2
3
4
5
6
2.10 2.12 2.14 2.16 2.18
Frequency (GHz)
NF (dB)
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 7 of 8 Sept 2009
AH125
½W High Linearity InGaP HBT Amplifier
2.5-2.7 GHz Application Circuit Performance Plots
802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW
Typical O-FDMA Performance at 25 C
Frequency (GHz)
2.5
2.6
2.7
Units
Gain
14.1
14.3
14.1
dB
Input Return Loss
10
16
16
dB
Output Return Loss
10
10
10
dB
EVM
Pout=+20 dBm
1.5
1.5
1.5
%
Output P1dB
+28
+28
+28
dBm
Output IP3
Pout=+12 dBm/tone, 1MHz spacing
+49.5
+45.7
+43.2
dBm
Quiescent Current, Icq
150
mA
Vcc
+5
V
C3
C4
C2R2
R4
L1
R1
C1
C9
C10
C8
C8
C9
C10
Notes:
1. The primary RF microstrip line is 50 .
2. Components shown on the silkscreen but not on the schematic are not used.
3. 0 jumpers can be replaced with copper trace in target application.
4. The edge of C9 is placed at 50 mil from AH125 RFout pin. (7.2o @ 2.6 GHz)
5. The edge of C10 is placed at 30 mil from AH125 RFin pin. (4.3o @ 2.6 GHz)
6. The edge of R1 is placed 35 mil from the edge of C10. (5o @ 2.6 GHz)
10
11
12
13
14
15
2.40 2.50 2.60 2.70 2.80
Gain (dB)
Frequency (GHz)
Gain vs. Frequency
T=25°C
-30
-25
-20
-15
-10
-5
0
2.40 2.50 2.60 2.70 2.80
S11, S22 (dB)
Frequency (GHz)
Return Loss
T=25°C
S11
S22
0
1
2
3
4
5
10 12 14 16 18 20 22
EVM (%)
Output Power (dBm)
EVM vs. Output Average Power vs. Frequency
T=25°C
2.5 GHz
2.6 GHz
2.7 GHz
802.16-2004 O-FDMA, 64QAM-
1/2, 1024-FFT, 20 symbols and 30
subchannels, 5 MHz Carrier BW
140
150
160
170
180
190
10 12 14 16 18 20 22
Collector Current (mA)
Output Power (dBm)
Current vs Output Average Power vs. Frequency
T=25°C
2.5 GHz
2.6 GHz
2.7 GHz
-70
-65
-60
-55
-50
-45
10 12 14 16 18 20
ACLR (dBc)
Output Power (dBm)
ACLR vs. Output Average Power vs. Frequency
T=25°C
2.5 GHz
2.6 GHz
2.7 GHz
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 9.7 dB @ 0.01% Probability
3.84 MHz BW
30
35
40
45
50
810 12 14 16 18 20
OIP3 (dBm)
Output Power/Tone (dBm)
OIP3 vs. Output Power/Tone vs. Frequency
T=25°C
2.5 GHz
2.6 GHz
2.7 GHz
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc Phone 503-615-9000 FAX: 503-615-8900 e-mail: info-sales@tqs.com Web site: www.TriQuint.com Page 8 of 8 Sept 2009
AH125
½W High Linearity InGaP HBT Amplifier
Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded
(maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Land Pattern
Product Marking
The AH125 will be marked with an
“AH125G” designator with a lot code marked
below the part designator. The “Y” represents
the last digit of the year the part was
manufactured, the “XXX” is an auto-
generated number, and “Z” refers to a wafer
number in a lot batch.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
ESD Rating: Class 2
Value: Passes 2000V to <4000V
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ESD Rating: Class IV
Value: Passes ≥ 2000V min.
Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 C convection reflow
Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of
this device. Vias should use a .35mm (#80 / .0135”) diameter
drill and have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near
the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board
to a heatsink. Ensure that the ground / thermal via region
contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
YXXX-Z
AH125G