Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
Max
24 30
53 64
R
θJC
2.6 3.5
2W
T
A
=70°C 1.3
W
Junction and Storage Temperature Range
A
P
D
°C
35
14
-55 to 150
T
C
=100°C
I
D
Continuous Drain
Current
BJ
Maximum UnitsParameter
T
C
=25°C
T
C
=100°C
30
Maximum Junction-to-Ambient
A
Steady-State
24
19
120
Avalanche Current
C
30
Power Dissipation
A
T
A
=25°C P
DSM
°C/W
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
V±12
Pulsed Drain Current
Power Dissipation
B
T
C
=25°C
Gate-Source Voltage
Drain-Source Voltage
Maximum Junction-to-Case
C
Steady-State °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A
t ≤ 10s R
θJA
°C/W
A
Repetitive avalanche energy L=0.3mH
C
135 mJ
A
T
A
=70°C 8
Continuous Drain
Current
H
T
A
=25°C I
DSM
10
AON6410
30V N-Channel MOSFET
Product Summary
V
DS
(V) = 30V
I
D
= 24A (V
GS
= 10V)
R
DS(ON)
< 12mΩ (V
GS
= 10V)
R
DS(ON)
< 14mΩ (V
GS
= 4.5V)
100% UIS Tested
100% Rg Tested
General Description
The AON6410 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge.This
device is suitable for use as a high side switch in
SMPS and general purpose applications.
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View Bottom View
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON6410
Symbol Min Typ Max Units
BV
DSS
30 V
1
T
J
=55°C 5
I
GSS
100
V
GS(th)
1 1.5 2.5 V
I
D(ON)
120 A
10 12
T
J
=125°C 16 19
11.5 14 mΩ
g
FS
49 S
V
SD
0.72 1.0 V
I
S
35 A
C
iss
1210 1452 pF
C
oss
330 pF
C
rss
85 pF
R
g
1.1 1.6 Ω
Q
g
(10V) 22 28 nC
Q
g
(4.5V) 10 13 nC
Q
gs
3.7 nC
Q
gd
2.7 nC
t
D(on)
10 ns
t
r
6.3 ns
t
D(off)
21 ns
t
f
2.8 ns
t
rr
36 45 ns
Q
rr
47 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=20A
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=15V, R
L
=0.75Ω,
R
GEN
=3Ω
Turn-Off Fall Time
Turn-On DelayTime
mΩ
V
GS
=4.5V, I
D
=10A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=20A
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
µA
Gate Threshold Voltage V
DS
=V
GS
I
D
=250µA
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
Reverse Transfer Capacitance
I
F
=20A, dI/dt=100A/µs
A: The value of RθJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
J. Maximum current is limited by bonding wire.
Rev8: March 2011
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON6410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
20
40
60
80
100
120
0 1 2 3 4 5
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
10V
4.5V
V
GS
=3.5V
6V
0
20
40
60
80
100
1 2 3 4 5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
8
9
10
11
12
13
14
0 5 10 15 20 25 30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
5 30 55 80 105 130 155 180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
I
D
=20A
V
GS
=4.5V
V
GS
=10V
5
10
15
20
25
30
35
2 4 6 8 10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=20A
25°C
125°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON6410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15 20 25
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
500
1000
1500
2000
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
10
100
1000
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
C
oss
C
rss
0.1
1.0
10.0
100.0
1000.0
0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
V
DS
=15V
I
D
=20A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJc
.R
θJc
R
θJC
=3.5°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max
)
=150°C
T
C
=25°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON6410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0.0001 0.001 0.01 0.1
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
I
D
(A), Peak Avalanche Current
0
10
20
30
40
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
Power Dissipation (W)
T
A
=25°C
0
5
10
15
20
25
30
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 14: Current De-rating (Note B)
Current rating I
D
(A)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=64°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
1
10
100
1000
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
Power (W)
T
A
=25°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AON6410
#DIV/0! #DIV/0!
#DIV/0! #DIV/0!
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dtI
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
AR
AR
Alpha & Omega Semiconductor, Ltd. www.aosmd.com