AON6410 30V N-Channel MOSFET General Description Product Summary The AON6410 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. VDS (V) = 30V ID = 24A (VGS = 10V) RDS(ON) < 12m (VGS = 10V) RDS(ON) < 14m (VGS = 4.5V) 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25C Continuous Drain Current BJ Units V 12 V 24 TC=100C Pulsed Drain Current ID 19 IDM 120 TA=25C Continuous Drain Current H Maximum 30 A 10 TA=70C IDSM A 8 Avalanche Current C IAR 30 A Repetitive avalanche energy L=0.3mH C TC=25C EAR 135 mJ Power Dissipation B Power Dissipation A TC=100C TA=25C Junction and Storage Temperature Range Maximum Junction-to-Case C 2 -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 1.3 TJ, TSTG t 10s Steady-State Steady-State W 14 PDSM TA=70C Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A 35 PD RJA RJC Typ 24 53 2.6 C Max 30 64 3.5 Units C/W C/W C/W www.aosmd.com AON6410 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= 12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 1 On state drain current VGS=10V, VDS=5V 120 TJ=55C VGS=10V, ID=20A Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125C VGS=4.5V, ID=10A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) 5 VGS=10V, VDS=15V, ID=20A A 100 nA 1.5 2.5 V 10 12 16 11.5 19 A 14 49 0.72 1210 VGS=0V, VDS=15V, f=1MHz Units V VDS=30V, VGS=0V Zero Gate Voltage Drain Current RDS(ON) Max 30 IDSS ID(ON) Typ m m S 1.0 V 35 A 1452 pF 330 pF 85 pF 1.1 1.6 22 28 nC 10 13 nC 3.7 nC Gate Drain Charge 2.7 nC Turn-On DelayTime 10 ns 6.3 ns 21 ns VGS=10V, VDS=15V, RL=0.75, RGEN=3 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=100A/s 36 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s 47 Body Diode Reverse Recovery Time 2.8 ns 45 ns nC A: The value of RJA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper. J. Maximum current is limited by bonding wire. Rev8: March 2011 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 100 10V VDS=5V 4.5V 100 80 6V 60 ID(A) ID (A) 80 VGS=3.5V 60 40 40 125 20 20 25C 0 0 0 1 2 3 4 5 1 2 VDS (Volts) Fig 1: On-Region Characteristics 4 5 VGS(Volts) Figure 2: Transfer Characteristics 14 Normalized On-Resistance 2 13 RDS(ON) (m ) 3 VGS=4.5V 12 11 10 VGS=10V 9 8 ID=20A VGS=4.5V 1.8 1.6 1.4 VGS=10V 1.2 1 0.8 0 5 10 15 20 25 30 5 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 55 80 105 130 155 180 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 35 1.E+02 ID=20A 1.E+01 125C 1.E+00 25 125C 20 25C 1.E-01 IS (A) RDS(ON) (m ) 30 1.E-02 15 25C 1.E-03 10 1.E-04 1.E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AON6410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 10 VDS=15V ID=20A Ciss 1500 Capacitance (pF) VGS (Volts) 8 6 4 1000 500 2 Coss Crss 0 0 0 5 10 15 20 25 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000 TJ(Max)=150C TC=25C 100.0 10s RDS(ON) limited Power (W) ID (Amps) 5 100 10.0 1ms 10ms DC 1.0 100 TJ(Max)=150C TC=25C 0.1 0.1 1 10 10 0.0001 100 VDS (Volts) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJc.RJc RJC=3.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6410 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 TA=25C 25 Power Dissipation (W) ID(A), Peak Avalanche Current 30 20 15 10 30 20 10 5 0 0 0.0001 0.001 0.01 0 0.1 25 50 75 100 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 30 1000 25 TA=25C 20 Power (W) Current rating ID(A) 125 15 10 100 10 5 0 0 25 50 75 100 125 150 175 1 0.0001 0.001 TCASE (C) Figure 14: Current De-rating (Note B) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) Z JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=64C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6410 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id #DIV/0! #DIV/0! DUT Vgs Vgs #DIV/0! #DIV/0! Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com